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    MH1099 Search Results

    MH1099 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MH1099 Atmel ASIC: 1.6 Million Gates Sea Of Gates/Embedded Arrays Original PDF
    MH1099-BGA121 Atmel 1.6 Million gates Sea of Gate / Embedded Array Original PDF
    MH1099E Atmel Rad Hard 1.6M Used Gates 0.35 um CMOS Sea of Gates/Embedded Array Original PDF
    MH1099ER Atmel 1.6M Used Gates 0.35 CMOS Sea of Gates / Embedded Arrays Original PDF
    MH1099ES Atmel 1.6M Used Gates 0.35 CMOS Sea of Gates / Embedded Arrays Original PDF
    MH1099R Atmel 1.6M Used Gates 0.35 CMOS Sea of Gates / Embedded Arrays Original PDF
    MH1099S Atmel 1.6M Used Gates 0.35 CMOS Sea of Gates / Embedded Arrays Original PDF

    MH1099 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ATMEL 634

    Abstract: ambit rev 4 LSI CMOS GATE ARRAY PO11V5 MH1099 MH1242 705uA
    Text: Features • • • • • Up to 1.6 Million Used Gates and 596 Pads, with 3.3V, 3V, and 2.5V Libraries High Speed - 170 ps Gate Delay - 2 Input NAND, FO = 2 Nominal System Level Integration Technology Cores on Request SRAM and TPRAM; Gate Level or Embedded


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    PDF 5962-01B01 4138F ATMEL 634 ambit rev 4 LSI CMOS GATE ARRAY PO11V5 MH1099 MH1242 705uA

    AOI222

    Abstract: AOI2223 AOI222H MH1099 MH1242 0.35-um CMOS standard cell library inverter
    Text: Features • High Speed - 170 ps Gate Delay - 2 Input NAND, FO = 2 Nominal • Up to 1.6 Million Used Gates and 596 Pads, with 3.3V, 3V, and 2.5V Libraries • System Level Integration Technology Cores on Request: SRAM and TRAM (Gate Level or Embedded) • I/O Interfaces:


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    PDF 5962-01B01 4138E AOI222 AOI2223 AOI222H MH1099 MH1242 0.35-um CMOS standard cell library inverter

    tristate buffer

    Abstract: smd transistor AO HEX TO DECIMAL tristate buffer cmos A101 A201 MH1099E MH1156E PO11F MH1332E
    Text: Features • High Speed - 180 ps Gate Delay - 2 Input NAND, FO = 2 nominal • Up to 1.198M Used Gates and 512 Pads with 3.3V, 3V and 2.5V Libraries when Tested to Space Quality Grades • Up to 1.6M Used Gates and 596 Pads with 3.3V, 3V and 2.5V Libraries when Tested to


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    PDF 4110F tristate buffer smd transistor AO HEX TO DECIMAL tristate buffer cmos A101 A201 MH1099E MH1156E PO11F MH1332E

    DIGITAL IC TESTER report for project

    Abstract: atmel 504 IO33 ATC18RHA 4261C virage IO33
    Text: Features • Comprehensive Library of Standard Logic and I/O Cells • ATC18RHA Core and IO18 pads Designed to Operate with VDD = 1.8V +/- 0.15V as Main • • • • • • • • • • • • • • Condition IO33 Pad Libraries Provide Interfaces to 3.3+/-0.3V Environments


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    PDF ATC18RHA 655Mbps) 4261C DIGITAL IC TESTER report for project atmel 504 IO33 ATC18RHA virage IO33

    ta 8268

    Abstract: qml-38535 4090 F 01B01 marking code 33916 MH1242ER smd code MH1
    Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Add device type 09 – 32 and appendix A. - phn 02-02-11 Thomas M. Hess B Add Case outline U and T. Editorial changes throughout. - phn 03-06-03 Thomas M. Hess C Change maximum supply voltage range from 3.6 V to 4.0 V and from 5.5 V to


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    PDF F7400 ta 8268 qml-38535 4090 F 01B01 marking code 33916 MH1242ER smd code MH1

    MH1099

    Abstract: MH1242 PO11V5 4138G
    Text: Features • • • • • Up to 1.6 Million Used Gates and 596 Pads, with 3.3V, 3V, and 2.5V Libraries High Speed - 170 ps Gate Delay - 2 Input NAND, FO = 2 Nominal System Level Integration Technology Cores on Request SRAM and TRAM (Gate Level or Embedded)


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    PDF 5962-01B01 4138G MH1099 MH1242 PO11V5

    A101

    Abstract: A201 MH1099E MH1156E MH1242E MH1332E AMI 1108
    Text: Features • • • • • • • • • • • Up to 1.6M Used Gates and 596 Pads with 3.3V, 3V and 2.5V Libraries High Speed - 180 ps Gate Delay - 2 Input NAND, FO = 2 nominal System Level Integration Technology Cores on Request Memories: SRAM and TPRAM, Gate Level or Embedded, with EDAC


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    PDF 20nts 4110H A101 A201 MH1099E MH1156E MH1242E MH1332E AMI 1108

    A101

    Abstract: A201 MH1099E MH1156E MH1242E MH1332E atmel 838 atmel edac dsp radiation hard
    Text: Features • • • • • • • • • • • Up to 1.6M Used Gates and 596 Pads with 3.3V, 3V and 2.5V Libraries High Speed - 170 ps Gate Delay - 2 Input NAND, FO = 2 nominal System Level Integration Technology Cores on Request Memories: SRAM and TPRAM, Gate Level or Embedded, with EDAC


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    PDF 4110I A101 A201 MH1099E MH1156E MH1242E MH1332E atmel 838 atmel edac dsp radiation hard

    DIGITAL IC TESTER report for project

    Abstract: ATMEL 644 IO33 4261F ATC18RHA Genesys Logic MQFP-F196 5962-06B02 atmel 216 4261b
    Text: Features • • • • • • • • • • • • • • • • Comprehensive Library of Standard Logic and I/O Cells ATC18RHA Core pads Designed to Operate with VDD = 1.8V +/- 0.15V as Main Condition IO33 Pad Libraries Provide Interfaces to 3.3+/-0.3V and 2.5 +/- 0.25V Environments


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    PDF ATC18RHA 655Mbps) 4261F DIGITAL IC TESTER report for project ATMEL 644 IO33 Genesys Logic MQFP-F196 5962-06B02 atmel 216 4261b

    DIGITAL IC TESTER report for project

    Abstract: MCGA349 PL33RXZ atmel 504 ATMEL 644 ATC18RHA 5962-06B02 MQFP-T352 IO33 mcga
    Text: Features • • • • • • • • • • • • • • • • Comprehensive Library of Standard Logic and I/O Cells ATC18RHA Core pads Designed to Operate with VDD = 1.8V +/- 0.15V as Main Condition IO33 Pad Libraries Provide Interfaces to 3.3+/-0.3V and 2.5 +/- 0.25V Environments


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    PDF ATC18RHA 655Mbps) 4261E DIGITAL IC TESTER report for project MCGA349 PL33RXZ atmel 504 ATMEL 644 5962-06B02 MQFP-T352 IO33 mcga

    ATMEL 634

    Abstract: ambit rev 4 C 828 dual mcga SRAM edac A101 A201 MH1099E MH1156E MH1242E
    Text: Features • • • • • • • • • Up to 1.6M Used Gates and 596 Pads with 3.3V, 3V and 2.5V Libraries High Speed - 180 ps Gate Delay - 2 Input NAND, FO = 2 nominal System Level Integration Technology Cores on Request Memories: SRAM and TPRAM, Gate Level or Embedded, with EDAC


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    PDF 4110G ATMEL 634 ambit rev 4 C 828 dual mcga SRAM edac A101 A201 MH1099E MH1156E MH1242E

    PO88

    Abstract: ttl buffer AOI222 AOI2223 AOI2223H AOI222H MH1099 MH1242 PRD21 PRD29V5
    Text: Features • High Speed - 170 ps Gate Delay - 2 input NAND, FO=2 nominal • Up to 1.6 Million Used Gates and 596 pads, with 3.3V, 3V, and 2.5V libraries • System Level Integration Technology Cores on request: SRAM and TRAM (Gate Level or Embedded) • I/O Interfaces:


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    PDF 250MHz 220MHz 800MHz 5962-01B01 PO88 ttl buffer AOI222 AOI2223 AOI2223H AOI222H MH1099 MH1242 PRD21 PRD29V5

    Untitled

    Abstract: No abstract text available
    Text: Features • • • • • • • • • • • • Up to 1.6M Used Gates and 596 Pads with 3.3V, 3V and 2.5V Libraries High Speed - 170 ps Gate Delay - 2 Input NAND, FO = 2 nominal System Level Integration Technology Cores on Request Memories: SRAM and TPRAM, Gate Level or Embedded, with EDAC


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    PDF 4110Lâ

    TEMIC PLD

    Abstract: PRU10 PRD8 buffer 8x Structure of D flip-flop DFFSR AOI222 AOI2223 AOI2223H AOI222H MH1099
    Text: MH1 1.6 Million gates Sea of Gates / Embedded Arrays 1. Description The MH1 Series Gate Array and Embedded Array families from TEMIC are fabricated in a 0.35µ CMOS process, with up to 3 levels of metal. This family features arrays with up to 1.6 million routable gates and 600 pins. The


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    PDF

    ATMEL 634

    Abstract: MH1099 MH1242 PO11V5 dual lvds vhdl
    Text: Features • • • • • Up to 1.6 Million Used Gates and 596 Pads, with 3.3V, 3V, and 2.5V Libraries High Speed - 170 ps Gate Delay - 2 Input NAND, FO = 2 Nominal System Level Integration Technology Cores on Request SRAM and TRAM (Gate Level or Embedded)


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    PDF 5962-01B01 4138G ATMEL 634 MH1099 MH1242 PO11V5 dual lvds vhdl

    Untitled

    Abstract: No abstract text available
    Text: Features • • • • • Up to 1.6 Million Used Gates and 596 Pads, with 3.3V, 3V, and 2.5V Libraries High Speed - 170 ps Gate Delay - 2 Input NAND, FO = 2 Nominal System Level Integration Technology Cores on Request SRAM and TRAM (Gate Level or Embedded)


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    PDF 5962-01B01 4138Gâ

    A101

    Abstract: A201 MH1099E MH1156E MH1242E MH1332E HEX TO DECIMAL ATMEL 220 dsp radiation hard
    Text: Features • • • • • • • • • • • • Up to 1.6M Used Gates and 596 Pads with 3.3V, 3V and 2.5V Libraries High Speed - 170 ps Gate Delay - 2 Input NAND, FO = 2 nominal System Level Integration Technology Cores on Request Memories: SRAM and TPRAM, Gate Level or Embedded, with EDAC


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    PDF 4110K A101 A201 MH1099E MH1156E MH1242E MH1332E HEX TO DECIMAL ATMEL 220 dsp radiation hard

    Atmel 544

    Abstract: atmel 504 atmel 404 MQFPT352 MLGA625 725m 5962-06B02 atmel h 404 MH1242E 404D
    Text: Features • • • • • • • • • • • • • • • • • Comprehensive Library of Standard Logic and I/O Cells Up to 6.5 usable Mgates equivalent NAND2 Operating voltage 1.8V for core and 3.3V or 2.5V for I/O’s Memory Cells Compiled or synthesized to the Requirements of the Design


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    PDF 655Mbps) 4261G Atmel 544 atmel 504 atmel 404 MQFPT352 MLGA625 725m 5962-06B02 atmel h 404 MH1242E 404D

    Transistor Equivalent list po55

    Abstract: Structure of D flip-flop DFFSR tristate buffer sis 968 PO-44Z PRU11 AC/DC drive nec 78054 PO22 tristate buffer cmos
    Text: Features • High Speed - 180 ps Gate Delay - 2 input NAND, FO=2 nominal • Up to 1.198 M Used Gates and 512 Pads with 3.3 V, 3V and 2.5V libraries when tested to space quality grades • Up to 1.6M Used Gates and 596 Pads with 3.3 V, 3V and 2.5V libraries when tested to


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    PDF

    5962-01B01

    Abstract: perfo 124 373 01B01 vhdl code 4794 qml-38535 3629 BP 4090 Datasheet ci 4009 5962-01B0115V9A 5962-01B0111V
    Text: REVISIONS LTR DESCRIPTION A DATE YR-MO-DA APPROVED 02-02-11 Thoma M. Hess Add device type 09 – 32 and appendix A. - phn REV A SHEET 55 REV A A A A A A A A A A A A A A A A A A A A SHEET 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 REV A A


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    PDF F7400 5962-01B01 perfo 124 373 01B01 vhdl code 4794 qml-38535 3629 BP 4090 Datasheet ci 4009 5962-01B0115V9A 5962-01B0111V

    atmel13

    Abstract: 0.18-um CMOS technology characteristics DIGITAL IC TESTER report for project ATMEL 644 IO33 IC Ensemble ATC18RHA IBIS model Genibis Atmel IO33 ATC18RHA atmel 336
    Text: Features • Comprehensive Library of Standard Logic and I/O Cells • ATC18RHA Core and IO18 pads Designed to Operate with VDD = 1.8V +/- 0.15V as Main • • • • • • • • • • • • Condition IO33 Pad Libraries Provide Interfaces to 3.3+/-0.3V Environments


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    PDF ATC18RHA 655Mbps) 4261B atmel13 0.18-um CMOS technology characteristics DIGITAL IC TESTER report for project ATMEL 644 IO33 IC Ensemble IBIS model Genibis Atmel IO33 ATC18RHA atmel 336

    qml-38535

    Abstract: 6227 4090 Datasheet ci 4009 Y-351 vhdl code 4794 smd code MH1
    Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Add device type 09 – 32 and appendix A. - phn 02-02-11 Thomas M. Hess B Add Case outline U and T. Editorial changes throughout. - phn 03-06-03 Thomas M. Hess C Change maximum supply voltage range from 3.6 V to 4.0 V and from 5.5 V to


    Original
    PDF F7400 qml-38535 6227 4090 Datasheet ci 4009 Y-351 vhdl code 4794 smd code MH1