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    PNP TRANSISTOR 0.1A 60V Search Results

    PNP TRANSISTOR 0.1A 60V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    PNP TRANSISTOR 0.1A 60V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    A733P

    Abstract: transistor a733 pnp A733-P a733 A733R Transistor a733 a733 transistor Transistor TO-92 A733 A733 P a733p transistor
    Text: A733 -0.1A , -60V PNP Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES Power Dissipation G H 1Emitter 2Collector 3Base J CLASSIFICATION OF hFE A Product-Rank


    Original     		PDF A733-R A733-Q A733-P A733-K 04-Mar-2011 -100mA, -10mA 100Hz, A733P transistor a733 pnp A733-P a733 A733R Transistor a733 a733 transistor Transistor TO-92 A733 A733 P a733p transistor

    2SA1611

    Abstract: 2SA1611M6 marking M6 Diode marking m7 M7 marking 2SC4177 2SA1611-M7 marking m5 600 marking
    Text: 2SA1611 -0.1A , -60V PNP Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-323 FEATURES  High DC Current Gain  High Voltage  Complementary to 2SC4177 A L


    Original     		PDF 2SA1611 OT-323 2SC4177 2SA1611-M4 2SA1611-M6 2SA1611-M7 2SA1611-M5 -100mA, -10mA 2SA1611 2SA1611M6 marking M6 Diode marking m7 M7 marking 2SC4177 2SA1611-M7 marking m5 600 marking

    2SA1440

    Abstract: 2SA144 SWITCHING TRANSISTOR 60V
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1440 DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = -60V(Min) ·High DC Current Gain: hFE= 100(Min)@ (VCE= -2V , IC= -0.5A) ·Low Saturation Voltage: VCE(sat)= -0.3V(Max)@ (IC= -2A, IB= -0.1A)


    Original     		PDF 2SA1440 2SA1440 2SA144 SWITCHING TRANSISTOR 60V

    Untitled

    Abstract: No abstract text available
    Text: 2SA2094 Datasheet PNP -2A -60V Middle Power Transistor lOutline Parameter Value VCEO IC -60V -2A TSMT3 Collector Base Emitter lFeatures 1 Suitable for Middle Power Driver 2) Complementary NPN Types : 2SC5866 3) Low VCE sat) VCE(sat)= -0.50V(Max.) (IC/IB= -1A / -0.1A)


    Original     		PDF 2SA2094 2SC5866 SC-96) R1102A

    2SB1393

    Abstract: 2SD1985
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1393 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -60V(Min.) ·Good Linearity of hFE ·Low Collector Saturation Voltage: VCE(sat)= -1.2V(Max,)@ IC= -3A ·Complement to Type 2SD1985


    Original     		PDF 2SB1393 2SD1985 2SB1393 2SD1985

    transistor a09

    Abstract: ic 556 datasheet "PNP Transistor" ic 556 TSA1036 PNP Epitaxial Silicon Transistor sot-23 TSA1036CX TSC2411 transistor a09 SOT-23
    Text: TSA1036 General Purpose PNP Transistor SOT-23 PRODUCT SUMMARY Pin Definition: 1. Base 2. Emitter 3. Collector BVCBO -60V BVCEO -60V IC -0.6A VCE SAT Features ● ● Ordering Information Low VCE(SAT) -0.4 @ IC / IB = -150mA / -15mA Complementary part with TSC2411


    Original     		PDF TSA1036 OT-23 -150mA -15mA TSC2411 TSA1036CX transistor a09 ic 556 datasheet "PNP Transistor" ic 556 TSA1036 PNP Epitaxial Silicon Transistor sot-23 TSC2411 transistor a09 SOT-23

    2sd315

    Abstract: 2SB509
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB509 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -60V(Min) ·Low Collector-Emitter Saturation Voltage: VCE(sat)= -1.0V(Max) @IC= -2.0A ·Complement to Type 2SD315


    Original     		PDF 2SB509 2SD315 2sd315 2SB509

    2SB813

    Abstract: No abstract text available
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB813 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -60V(Min) ·Good Linearity of hFE ·High Power Dissipation APPLICATIONS ·Designed for AF power amplifier applications


    Original     		PDF 2SB813 2SB813

    2SA766

    Abstract: 2SC1450
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA766 DESCRIPTION •Collector-Base Breakdown Voltage: V BR CBO= -150V(Min) ·High Collector Power Dissipation·Complement to Type 2SC1450 APPLICATIONS ·Line-operated vertical deflection output


    Original     		PDF 2SA766 -150V 2SC1450 2SA766 2SC1450

    2SB1038

    Abstract: 2sd1310
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1038 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -60V(Min.) ·Low Collector Saturation Voltage : VCE(sat)= -1.5V(Max)@IC= -2A ·Complement to Type 2SD1310


    Original     		PDF 2SB1038 2SD1310 -50mA; 2SB1038 2sd1310

    2SB1392

    Abstract: No abstract text available
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1392 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -60V(Min.) ·Good Linearity of hFE APPLICATIONS ·Designed for low frequency power amplifier applications.


    Original     		PDF 2SB1392 2SB1392

    2SB761

    Abstract: SWITCHING TRANSISTOR 60V 2SD856
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB761 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -60V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SD856 APPLICATIONS ·Designed for AF power amplifier applications.


    Original     		PDF 2SB761 2SD856 2SB761 SWITCHING TRANSISTOR 60V 2SD856

    2SB1217

    Abstract: 2SD1818
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1217 DESCRIPTION •High Collector Current -IC= -3A ·Collector-Emitter Breakdown Voltage: V BR CEO= -60V(Min) ·Good Linearity of hFE ·Low Saturation Voltage ·Complement to Type 2SD1818


    Original     		PDF 2SB1217 2SD1818 2SB1217 2SD1818

    TRANSISTOR MJ11029

    Abstract: transistor mj11028 equivalent MJ11028 MJ11029 TRANSISTOR MJ11028
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage : V BR CEO= -60V(Min.) ·High DC Current Gain: hFE= 1000(Min.)@IC= -25A : hFE= 400(Min.)@IC= -50A ·Complement to Type MJ11028


    Original     		PDF MJ11028 -250mA 500mA -500mA TRANSISTOR MJ11029 transistor mj11028 equivalent MJ11028 MJ11029 TRANSISTOR MJ11028

    TRANSISTOR 2SB507

    Abstract: TRANSISTOR AF 416 pnp 2SD313 E 2sd313 equivalent 2SB507 2sd313 applications 2SD313
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB507 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -60V(Min) ·Low Collector-Emitter Saturation Voltage: VCE(sat)= -1.0V(Max) @IC= -2.0A ·Complement to Type 2SD313


    Original     		PDF 2SB507 2SD313 TRANSISTOR 2SB507 TRANSISTOR AF 416 pnp 2SD313 E 2sd313 equivalent 2SB507 2sd313 applications 2SD313

    Untitled

    Abstract: No abstract text available
    Text: , One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 U.S.A. 2SA766 Silicon PNP Power Transistor DESCRIPTION • Collector-Base Breakdown Voltage:V(BR)CBO=-150V(Min) • High Collector Power Dissipation• Complement to Type 2SC1450


    Original     		PDF 2SA766 -150V 2SC1450

    2SB1548

    Abstract: 2SD2374
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1548 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -60V(Min) ·Collector Power Dissipation: PC= 25 W@ TC= 25℃ ·Low Collector Saturation Voltage: VCE(sat)= -1.2V(Max)@ (IC= -3A, IB= -0.375A)


    Original     		PDF 2SB1548 2SD2374 10MHz 2SB1548 2SD2374

    BFX36

    Abstract: transistor 200V 100MA NPN BFT44 BFY81 PNP TO77 package bfx80
    Text: Search Results Part number search for devices beginning "BFT44" Datasheets are downloaded as Acrobat PDF files. Semelab Home Bipolar Products PRODUCT Polarity Package VCEO IC cont HFE(min) HFE(max) @ VCE/IC FT PD BFT44 PNP TO39 300V 0.5A 100typ - 10/10m 60MHz


    Original     		PDF BFT44" BFT44 BFT44S 100typ 10/10m 60MHz 70MHz BFT58" BFT58 BFX36 transistor 200V 100MA NPN BFY81 PNP TO77 package bfx80

    2SB1116

    Abstract: 2SD1616 2SD161
    Text: 2SB1116 -1 A, -60 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES High Collector Power Dissipation Complementary to 2SD1616 G H J CLASSIFICATION OF hFE 1


    Original     		PDF 2SB1116 2SD1616 2SB1116-L 2SB1116-K 2SB1116-U 21-Jan-2011 2SB1116 2SD1616 2SD161

    TRANSISTOR D400

    Abstract: D400 npn transistor D400 transistor TRANSISTOR NPN D400 D400 npn transistor D302 2sd2166 high hfe transistor NPN transistor 2sd1863 Transistor PNP VCEO 400V
    Text: Transistors 2SA1807 2SA1862 96-102-A331 (96-109-A343) 307 Transistors 2SA1812 / 2SA1727 / 2SA1776 (96-609-A313) 320 Transistors 2SA1834 2SC5001 (96-106-B217) (96-193-D217) 292 Transistors 2SA1952 / 2SA1906 / 2SA1757 2SC5103 / 2SC4596 (96-603-A314) (96-199-C314)


    Original     		PDF 2SA1807 2SA1862 96-102-A331) 96-109-A343) 2SA1812 2SA1727 2SA1776 96-609-A313) 2SA1834 2SC5001 TRANSISTOR D400 D400 npn transistor D400 transistor TRANSISTOR NPN D400 D400 npn transistor D302 2sd2166 high hfe transistor NPN transistor 2sd1863 Transistor PNP VCEO 400V

    0340 TRANSISTOR PNP

    Abstract: No abstract text available
    Text: 2N4898X 2N4899X 2N4900X MECHANICAL DATA Dimensions in mm inches 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 3.86 (0.145) rad. APPLICATIONS 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 14.48 (0.570) 14.99 (0.590) 24.33 (0.958) 24.43 (0.962)


    Original     		PDF 2N4898X 2N4899X 2N4900X 2N4900X 2N4899X" 2N4899X-JQR-B 0340 TRANSISTOR PNP

    2SA1214

    Abstract: 50V 1A PNP power transistor
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1214 DESCRIPTION •Collector-Emitter Breakdown VoltageV BR CEO= -50V (Min) ·Good Linearity of hFE ·Wide Area of Safe Operation APPLICATIONS ·Desinged for low frequency power amplifier applications.


    Original     		PDF 2SA1214 -55-1mA; -150mA; -100mA; 2SA1214 50V 1A PNP power transistor

    Untitled

    Abstract: No abstract text available
    Text: MCC Features • • • • 2SA733   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Capable of 0.25Watts of Power Dissipation. Collector-current 0.1A Collector-base Voltage 60V Operating and storage junction temperature range: -55OC to +150 OC


    Original     		PDF 2SA733 25Watts -55OC 50uAdc, 60Vdc, 100mAdc, 10mAdc) 10mAdc, 30MHz)

    2SB1085A

    Abstract: No abstract text available
    Text: S "7 > v 7, £ /Transistors 2SB1085A PNP '> ';= !> Freq. Power Amp. Epitaxial Planar PNP Silicon Transistor • &M : • i>|.JfiT|-;£|I]/Dim ensions U n it: mm 1) 7 i . 5 (BVC e o = - 1 60V )o 2) A S O A 'l l 'o 3 ) W l i < , C o b A ^ J ^ l ' o 4) 2 S D 1 5 6 2 A t = J > y j T i > 5 o


    OCR Scan     		PDF 2SB1085A -160V 2SD1562A. 2SB1085A