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    PNP IC 7A Search Results

    PNP IC 7A Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    ISL73128RHF/PROTO Renesas Electronics Corporation Radiation Hardened Ultra High Frequency PNP Transistor Array Visit Renesas Electronics Corporation
    ISL73096RHF/PROTO Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation
    ISL73128RHX/SAMPLE Renesas Electronics Corporation Radiation Hardened Ultra High Frequency PNP Transistor Array Visit Renesas Electronics Corporation
    ISL73096RHX/SAMPLE Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation
    ISL73128RHVX Renesas Electronics Corporation Radiation Hardened Ultra High Frequency PNP Transistor Array, DIE, / Visit Renesas Electronics Corporation

    PNP IC 7A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SD843

    Abstract: 2SB753
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB753 DESCRIPTION •High Collector Current: IC= -7A ·Low Collector Saturation Voltage : VCE sat = -0.5V(Max)@IC= -4A ·High Collector Power Dissipation ·Complement to Type 2SD843


    Original     		PDF 2SB753 2SD843 -100V 2SD843 2SB753

    2SB1289

    Abstract: 2SD1580
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1289 DESCRIPTION •High Collector Current: IC= -7A ·Low Collector Saturation Voltage : VCE sat = -1.0V(Max)@IC= -4A ·Wide Area of Safe Operation ·Complement to Type 2SD1580


    Original     		PDF 2SB1289 2SD1580 2SB1289 2SD1580

    Inverter high voltage power transistor

    Abstract: 2SB825 2SD1061
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB825 DESCRIPTION •High Collector Current: IC= -7A ·Low Collector Saturation Voltage : VCE sat = -0.4V(Max)@IC= -4A ·Wide Area of Safe Operation ·Complement to Type 2SD1061


    Original     		PDF 2SB825 2SD1061 Inverter high voltage power transistor 2SB825 2SD1061

    2SB1018A

    Abstract: 2SD1411A
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1018A DESCRIPTION •Low Collector Saturation Voltage: VCE sat = -0.5V(Max)@IC= -4A ·High Current Capability- IC= -7A ·Complement to Type 2SD1411A APPLICATIONS ·High current switching applications.


    Original     		PDF 2SB1018A 2SD1411A -100V; 2SB1018A 2SD1411A

    2SB1255

    Abstract: 2SD1895
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE= 5000 Min @IC= -6A ·Low-Collector Saturation Voltage: VCE(sat)= -2.5V(Max.)@IC= -7A ·Complement to Type 2SD1895 APPLICATIONS


    Original     		PDF 2SD1895 -160V; -140V; 2SB1255 2SD1895

    2SB827

    Abstract: 2SD1063
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB827 DESCRIPTION •High Collector Current: IC= -7A ·Low Collector Saturation Voltage : VCE sat = -0.4V(Max)@IC= -4A ·Wide Area of Safe Operation ·Complement to Type 2SD1063


    Original     		PDF 2SB827 2SD1063 25itter 2SB827 2SD1063

    2SB1503

    Abstract: 2SD2276 darlington power transistor
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE= 5000 Min @IC= -7A ·Low-Collector Saturation Voltage: VCE(sat)= -2.5V(Max.)@IC= -7A ·Complement to Type 2SD2276 APPLICATIONS


    Original     		PDF 2SD2276 -160V; -140V; 2SB1503 2SD2276 darlington power transistor

    2SB1560

    Abstract: 2SD2390
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE= 5000 Min @IC= -7A ·Low-Collector Saturation Voltage: VCE(sat)= -2.5V(Max.)@IC= -7A ·Complement to Type 2SD2390 APPLICATIONS


    Original     		PDF 2SD2390 -160V; 2SB1560 2SD2390

    2sd2439

    Abstract: 2SB1588 transistor 2sb1588
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE= 5000 Min @IC= -7A ·Low-Collector Saturation Voltage: VCE(sat)= -2.5V(Max.)@IC= -7A ·Complement to Type 2SD2439 APPLICATIONS


    Original     		PDF 2SD2439 -160V; 2sd2439 2SB1588 transistor 2sb1588

    2SB1558

    Abstract: 2SD2387
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE= 5000 Min @IC= -7A ·Low-Collector Saturation Voltage: VCE(sat)= -2.5V(Max.)@IC= -7A ·Complement to Type 2SD2387 APPLICATIONS


    Original     		PDF 2SD2387 -140V; 2SB1558 2SD2387

    2SB1290

    Abstract: 2SD1833 TRANSISTOR 2SD1833
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1290 DESCRIPTION •High Collector Current: IC= -7A ·Low Collector Saturation Voltage : VCE sat = -1.0V(Max)@IC= -4A ·Wide Area of Safe Operation ·Complement to Type 2SD1833


    Original     		PDF 2SB1290 2SD1833 2SB1290 2SD1833 TRANSISTOR 2SD1833

    2SD844

    Abstract: 2SB754 2SB754 equivalent
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB754 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -50V(Min) ·High Collector Current: IC= -7A ·Low Collector Saturation Voltage: VCE(sat)= -0.4V(Max) @IC= -4A


    Original     		PDF 2SB754 2SD844 -50mA; 2SD844 2SB754 2SB754 equivalent

    2SA1879

    Abstract: No abstract text available
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1879 DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = -80(V)(Min.) ·Low Collector Saturation Voltage :VCE(sat)= -0.3(V)(Max.)@IC= -3.5A ·Large Current Capability-IC= -7A


    Original     		PDF 2SA1879 2SA1879

    2SA1598

    Abstract: No abstract text available
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1598 DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = -40(V)(Min.) ·Low Collector Saturation Voltage :VCE(sat)= -0.3(V)(Max.)@IC= -3.5A ·Large Current Capability-IC= -7A


    Original     		PDF 2SA1598 2SA1598

    2SB925

    Abstract: No abstract text available
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB925 DESCRIPTION •High Collector Current: IC= -7A ·Low Collector Saturation Voltage : VCE sat = -0.6V(Max)@IC= -5A ·High Speed Switching APPLICATIONS ·Designed for low voltage switching applications.


    Original     		PDF 2SB925 -66mA 2SB925

    KTB1370

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTB1370 TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. A P S High Collector Current : IC=-7A. B E G Low Collector-Emitter Saturation Voltage. K : VCE sat =-0.5V(Max.) at IC=-4A.


    Original     		PDF KTB1370 KTB1370

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTB1370 TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. A P S High Collector Current : IC=-7A. B E G Low Collector-Emitter Saturation Voltage. K : VCE sat =-0.5V(Max.) at IC=-4A.


    Original     		PDF KTB1370

    2SD568

    Abstract: K 4080 2SB707
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB707 DESCRIPTION •High Collector Current: IC= -7A ·Low Collector Saturation Voltage : VCE sat = -0.5V(Max)@IC= -5A ·Complement to Type 2SD568 APPLICATIONS ·Designed for low-frequency power amplifiers and low-speed


    Original     		PDF 2SB707 2SD568 -10mA 2SD568 K 4080 2SB707

    2SB1097

    Abstract: 2SD1588
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1097 DESCRIPTION •High Collector Current: IC= -7A ·Low Collector Saturation Voltage : VCE sat = -0.5V(Max)@IC= -5A ·Complement to Type 2SD1588 APPLICATIONS ·Designed for low-frequency power amplifiers and low speed


    Original     		PDF 2SB1097 2SD1588 2SB1097 2SD1588

    2SD569

    Abstract: 2SB708
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB708 DESCRIPTION •High Collector Current: IC= -7A ·Low Collector Saturation Voltage : VCE sat = -0.5V(Max)@IC= -5A ·Complement to Type 2SD569 APPLICATIONS ·Designed for low-frequency power amplifiers and low-speed


    Original     		PDF 2SB708 2SD569 -10mA; 2SD569 2SB708

    2sa112

    Abstract: 2SA1129 2SC2654
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1129 DESCRIPTION •Low Collector Saturation Voltage :VCE sat = -0.3(V)(Max)@IC= -3A ·Large Current Capability-IC= -7A ·Complement to Type 2SC2654 APPLICATIONS ·Designed for mid-switching applications, and is ideal for


    Original     		PDF 2SA1129 2SC2654 2sa112 2SA1129 2SC2654

    A1640

    Abstract: A1640 pnp transistor a1640 BTA1640I3
    Text: Spec. No. : C657I3 Issued Date : 2007.04.04 Revised Date :2009.02.04 Page No. : 1/5 CYStech Electronics Corp. BVCEO IC RCESAT PNP Epitaxial Planar Power Transistor BTA1640I3 -50V -7A 70mΩ Features • Low collector-emitter saturation voltage, VCE sat = -0.4V(max) @ IC = -3A, IB=-0.15A


    Original     		PDF C657I3 BTA1640I3 O-251 UL94V-0 A1640 A1640 pnp transistor a1640 BTA1640I3

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTB1370 TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. FEATURES • High Collector Current : Ic=-7A. • Low Collector-Emitter Saturation Voltage. : VCE sat =-0.5V(Max.) at Ic=-4A.


    OCR Scan     		PDF KTB1370

    2sb1018

    Abstract: tag c9 240
    Text: SILICON PNP TRIPLE DIFFUSED TYPE 2SB1018 INDUSTRIAL APPLICATIONS Unit in mm HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. 1Q.3MAX. 03.g±ag FEATURES: . High Collector Current : Ic =-7A . Low Collector Saturation Voltage : vCE sat =-0-5v(Max-) at IC=-4A


    OCR Scan     		PDF 2SB1018 2SD1411 2sb1018 tag c9 240