D1411A
Abstract: 2SB1018A 2SD1411A
Text: 2SD1411A TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD1411A High-Current Switching Applications Power Amplifier Applications Unit: mm • Low saturation voltage: VCE sat = 0.5 V (max) at IC = 4 A • Complementary to 2SB1018A Absolute Maximum Ratings (Tc = 25°C)
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2SD1411A
2SB1018A
D1411A
2SB1018A
2SD1411A
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2SB1018A
Abstract: 2SD1411A
Text: SavantIC Semiconductor Product Specification 2SB1018A Silicon PNP Power Transistors DESCRIPTION •With TO-220F package ·High collector current ·Low collector saturation voltage ·Complement to type 2SD1411A APPLICATIONS ·Power amplifier applications ·High current switching applications
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2SB1018A
O-220F
2SD1411A
O-220F)
2SB1018A
2SD1411A
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D1411A
Abstract: 552a 2SB1018A 2SD1411A
Text: 2SD1411A 東芝トランジスタ シリコンNPN三重拡散形 2SD1411A 通 信 工 業 用 ○ 大電流スイッチング用 ○ 電力増幅用 単位: mm • 許容コレクタ電流が大きい。 : IC = 7 A • コレクタ飽和電圧が低い。
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2SD1411A
2SB1018A
2-10R1A
D1411A
552a
2SB1018A
2SD1411A
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D1411A
Abstract: 2SD1411A 2SB1018A D1411
Text: 2SD1411A TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD1411A High-Current Switching Applications Power Amplifier Applications Unit: mm • Low saturation voltage: VCE sat = 0.5 V (max) at IC = 4 A • Complementary to 2SB1018A Maximum Ratings (Tc = 25°C)
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2SD1411A
2SB1018A
2-10R1A
D1411A
2SD1411A
2SB1018A
D1411
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D1411A
Abstract: No abstract text available
Text: 2SD1411A TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD1411A High-Current Switching Applications Power Amplifier Applications Unit: mm • Low saturation voltage: VCE sat = 0.5 V (max) at IC = 4 A • Complementary to 2SB1018A Absolute Maximum Ratings (Tc = 25°C)
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2SD1411A
2SB1018A
2-10R1A
D1411A
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D1411A
Abstract: 2SB1018A 2SD1411A
Text: 2SD1411A 東芝トランジスタ シリコンNPN三重拡散形 2SD1411A 通 信 工 業 用 ○ 大電流スイッチング用 ○ 電力増幅用 単位: mm • 許容コレクタ電流が大きい。 : IC = 7 A • コレクタ飽和電圧が低い。
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2SD1411A
2SB1018A
2-10R1A
20070701-JA
D1411A
2SB1018A
2SD1411A
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D1411A
Abstract: 2SB1018A 2SD1411A
Text: 2SD1411A TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD1411A High-Current Switching Applications Power Amplifier Applications Unit: mm • Low saturation voltage: VCE sat = 0.5 V (max) at IC = 4 A • Complementary to 2SB1018A Absolute Maximum Ratings (Ta = 25°C)
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2SD1411A
2SB1018A
D1411A
2SB1018A
2SD1411A
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2SB1018A
Abstract: 2SD1411A
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1018A DESCRIPTION •Low Collector Saturation Voltage: VCE sat = -0.5V(Max)@IC= -4A ·High Current Capability- IC= -7A ·Complement to Type 2SD1411A APPLICATIONS ·High current switching applications.
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2SB1018A
2SD1411A
-100V;
2SB1018A
2SD1411A
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B1018A
Abstract: B1018 2SD1411A 2SB1018A
Text: 2SB1018A 東芝トランジスタ シリコンPNP三重拡散形 PCT方式 2SB1018A 通 信 工 業 用 ○ 大電力スイッチング用 ○ 電力増幅用 単位: mm • 許容コレクタ電流が大きい。 : IC = − 7 A • コレクタ飽和電圧が低い。
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2SB1018A
2SD1411A
2-10R1A
20070701-JA
B1018A
B1018
2SD1411A
2SB1018A
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B1018a
Abstract: b1018 2SB1018A 2SD1411A
Text: 2SB1018A TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT Process 2SB1018A High Current Switching Applications Power Amplifier Applications Unit: mm • High collector current: IC = −7 A • Low collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −4 A)
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2SB1018A
2SD1411A
B1018a
b1018
2SB1018A
2SD1411A
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smd transistor h2a
Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A
Text: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output
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BCE0016C
E-28831
BCE0016D
smd transistor h2a
SMD TRANSISTOR H2A NPN
transistor smd H2A
2sa1943 amplifier circuit diagram
TPCP8L01
2sC5200, 2SA1943
H2A transistor SMD
2sc5200 power amplifiers diagram
MARKING SMD PNP TRANSISTOR h2a
SMD H2A
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GT30F124
Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs
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2010/9SCE0004K
SC-43)
2SC1815
700the
GT30F124
TPCP8R01
GT30J124
JAPANESE 2SC TRANSISTOR 2010
smd transistor h2a
smd marking 8L01
tk25e06k3
GT45F122
gt30g124
GT30F123
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transistor bc 245
Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243
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SC-43)
2SC1815
TPS615
TPS616
TPS610
transistor bc 245
247Y
smd transistor h2a
gt30g122
gt35j321
GT45F123
MARKING SMD PNP TRANSISTOR h2a
GT45F122
GT45f122 Series
gt30f122
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2SA1941 amp circuit
Abstract: 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943
Text: Semiconductor Catalog Mar. 2013 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including
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BCE0016F
2SA1941 amp circuit
2SC3303
2SD880
TO3P package
2SA114
smd transistor h2a
2sb834
amplifier circuit using 2sa1943 and 2sc5200
TOSHIBA BIPOLAR POWER TRANSISTOR
amplifier design tta1943
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induction cooker fault finding diagrams
Abstract: MG100J2YS1 nikkei S-200 grease TOSHIBA IGBT MG50J2YS1 MG50J2YS1 induction cooker st induction cooker MOSFET IGBT DRIVERS THEORY nikkei jointal grease nikkei S-200 NIKKEI JOINTAL 200
Text: [5] Handling Precautions 1 Using Toshiba Semiconductors Safely TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when
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Z8115
MIL-HDBK-217E
S57-1
induction cooker fault finding diagrams
MG100J2YS1
nikkei S-200 grease
TOSHIBA IGBT MG50J2YS1
MG50J2YS1
induction cooker st
induction cooker MOSFET IGBT DRIVERS THEORY
nikkei jointal
grease nikkei S-200
NIKKEI JOINTAL 200
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B1018a
Abstract: b1018 2SB1018A 2SD1411A
Text: 2SB1018A TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT Process 2SB1018A High Current Switching Applications Power Amplifier Applications Unit: mm • High collector current: IC = −7 A • Low collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −4 A)
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2SB1018A
2SD1411A
B1018a
b1018
2SB1018A
2SD1411A
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TE2555
Abstract: 20AS 2SB1018A 2SD1411 2SD1411A
Text: 2SD1411A TOSHIBA TO SHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2 S D 1 411 A HIGH CURRENT SW ITCHING APPLICATIONS POWER AMPLIFIER APPLICATIONS • • Low Saturation Voltage : V q ^ s a t “ 0.5V (Max.) at Iq = 4A Complementary to 2SB1018A M A X IM U M RATINGS (Ta = 25°C)
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2SD1411A
2SB1018A
TE2555
20AS
2SD1411
2SD1411A
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20AS
Abstract: 2SB1018A 2SD1411 2SD1411A
Text: 2SD1411A TO SH IBA TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2 S D 1 411 A HIGH CURRENT SWITCHING APPLICATIONS POWER AMPLIFIER APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 10 ± 0.3 MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage
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2SD1411A
2SB1018A
20AS
2SD1411
2SD1411A
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Untitled
Abstract: No abstract text available
Text: 2SD1411A TOSHIBA TO SHIBA TRANSISTOR n n mm SILICON PNP TRIPLE DIFFUSED TYPE i mmr du i m mi a m m HIGH CURRENT SW ITCHING APPLICATIONS POWER AMPLIFIER APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm Low Saturation Voltage : V q e gaj = 0.5V (Max.) at Iç = 4A
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2SD1411A
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20AS
Abstract: 2SB1018A 2SD1411 2SD1411A
Text: 2SD1411A TO SH IBA 2 S D 1 411 A TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm HIGH CURRENT SWITCHING APPLICATIONS POWER AMPLIFIER APPLICATIONS 10 ±0.3 ^3.2 ± 0.2 -y 5< o f ml ÍY^ «îî m o Ö +i in 2.7±Q 2 ÏIT . r • • Low Saturation Voltage : Vq^ s a t “ 0.5V (Max.) at I q = 4A
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2SD1411A
2SB1018A
20AS
2SB1018A
2SD1411
2SD1411A
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Untitled
Abstract: No abstract text available
Text: 2SD1411A T O S H IB A 2 S D 1 411 A TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE HIGH CURRENT SWITCHING APPLICATIONS PO W ER AM PLIFIER APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 10 ±0.3 • • ^3.2 ±0.2 2.7Ì0.2 Low Saturation Voltage : V^E s a t = 0-5V (Max.) at I0 = 4A
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2SD1411A
2SB1018A
2SD1411
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SB1018A TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS 2 S B 1 0 1 8A HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS PO W ER AM PLIFIER APPLICATIONS • • • High Collector Current : Iq = —7A Low Collector Saturation Voltage
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2SB1018A
2SD1411A
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ze 003 ic
Abstract: c 1027 transistor 2SB1018A 2SD1411A PNP TRIPLE DIFFUSED TYPE HIGH VOLTAGE SWITCHING A TV-2000
Text: T O S H IB A 2SB1018A TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS 2 S B 1 018A HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm POWER AMPLIFIER APPLICATIONS 10 ±0.3 • High Collector Current : Ic = —7 A J •
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2SB1018A
2SD1411A
ze 003 ic
c 1027 transistor
2SB1018A
2SD1411A
PNP TRIPLE DIFFUSED TYPE HIGH VOLTAGE SWITCHING A
TV-2000
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Untitled
Abstract: No abstract text available
Text: TO SHIBA 2SB1018A TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS 2SB1018A HIGH CURRENT SWITCHING APPLICATIONS PO W ER AMPLIFIER APPLICATIONS • • • INDUSTRIAL APPLICATIONS Unit in mm 10 + 0.3 —I High Collector Current : I q = —7A
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2SB1018A
2SD1411A
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