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    PNP GERMANIUM LOW POWER TRANSISTOR Search Results

    PNP GERMANIUM LOW POWER TRANSISTOR Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR3DF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 300 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR1HF50B Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 5.0 V, 150 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    PNP GERMANIUM LOW POWER TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    pnp germanium to36

    Abstract: NTE330 Germanium power
    Text: NTE330 Germanium PNP Transistor High Power Switch Description: The NTE330 is a germanium PNP power transistor in a TO36 type package featuring low saturation voltage capability for high efficiency performance in motor drive controls and low loss regulators.


    Original     		PDF NTE330 NTE330 pnp germanium to36 Germanium power

    SMO-14

    Abstract: SLG 2016 D 2SK26 2N42 N4 TAM 2N425 marking aaae 2n427 GERMANIUM SMALL SIGNAL TRANSISTORS 2N426
    Text: MIL-S-19500A1B EL See Section6 MILITARYSPECIFICATION SEMICONDUCTORDEVICE,TRANSISTOR,PNP, GERMANIUM,SWITCHING TYPSS 2N425,2Nb26, 2N42? 1. SCOPS 131 w.-. This specificationcovers the detail requirementsfor germanium PNP,“transietora for use in low-power switchingapplication


    Original     		PDF MIL-S-19500A1B( 2N425 2Nb26 -AO07 SMO-14 SLG 2016 D 2SK26 2N42 N4 TAM marking aaae 2n427 GERMANIUM SMALL SIGNAL TRANSISTORS 2N426

    nte102

    Abstract: NTE103 vpt 20 germanium transistors NPN NTE10-3
    Text: NTE102 PNP & NTE103 (NPN) Germanium Complementary Transistors Power Output, Driver Description: The NTE102 (PNP) and NTE103 (NPN) are Germanium complementary transistors designed for medium–speed saturated switching applications. Features: D Low Collector–Emitter Saturation Voltage:


    Original     		PDF NTE102 NTE103 200mV nte102 NTE103 vpt 20 germanium transistors NPN NTE10-3

    NTE158

    Abstract: germanium pnp transistor Germanium power
    Text: NTE158 Germanium PNP Transistor Audio Power Amplifier Description: The NTE158 is a germanium PNP triode transistor in a TO1 type package designed for low-power, large signal audio applications. Absolute Maximum Ratings: TA = +25°C Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32V


    Original     		PDF NTE158 NTE158 300mA germanium pnp transistor Germanium power

    germanium Power Transistor

    Abstract: Vcb-60V NTE27 Germanium power
    Text: NTE27 Germanium PNP Transistor High Current, High Gain Amp Description: The NTE27 is a PNP germanium power transistor designed for high current applications requiring high–gain and low saturation voltages. Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V


    Original     		PDF NTE27 NTE27 germanium Power Transistor Vcb-60V Germanium power

    germanium Power Transistor

    Abstract: pnp germanium transistor germanium transistor pnp NTE27 GERMANIUM TRANSISTOR Germanium power
    Text: NTE27 Germanium PNP Transistor High Current, High Gain Amp Description: The NTE27 is a PNP germanium power transistor designed for high current applications requiring high-gain and low saturation voltages. Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V


    Original     		PDF NTE27 NTE27 germanium Power Transistor pnp germanium transistor germanium transistor pnp GERMANIUM TRANSISTOR Germanium power

    NTE158

    Abstract: germanium audio Germanium power
    Text: NTE158 Germanium PNP Transistor Audio Power Amplifier Description: The NTE158 is a germanium PNP triode transistor in a TO1 type package designed for low−power, large signal audio applications. Absolute Maximum Ratings: TA = +25°C Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32V


    Original     		PDF NTE158 NTE158 300mA germanium audio Germanium power

    NTE158

    Abstract: Germanium power
    Text: NTE158 Germanium PNP Transistor Audio Power Amplifier Description: The NTE158 is a germanium PNP triode transistor in a TO1 type package designed for low–power, large signal audio applications. Absolute Maximum Ratings: TA = +25°C Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32V


    Original     		PDF NTE158 NTE158 300mA Germanium power

    Untitled

    Abstract: No abstract text available
    Text: , {Jna. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2N4277 (GERMANIUM) PNP germanium power transistor designed for high current applications requiring high-gain and low saturation voltages.


    Original     		PDF 2N4277 -15Ade, -20Vde,

    bjt specifications

    Abstract: 2N652A power BJT PNP
    Text: 2N652A Ge PNP Lo-Pwr BJT 4.10 Transistors Bipolar Germanium PNP Low-Power Tra. Page 1 of 2 Enter Your Part # Home Part Number: 2N652A Online Store 2N652A Diodes Ge PNP Lo-Pwr BJT Transistors Enter code INTER3 at checkout.* Integrated Circuits Optoelectronics


    Original     		PDF 2N652A 2N652A com/2n652a bjt specifications power BJT PNP

    2N1303

    Abstract: No abstract text available
    Text: 2N1303 Ge PNP Lo-Pwr BJT 3.90 Transistors Bipolar Germanium PNP Low-Power Tran. Page 1 of 1 Enter Your Part # Home Part Number: 2N1303 Online Store 2N1303 Diodes Ge PNP Lo-Pwr BJT Transistors Enter code INTER3 at checkout.* Integrated Circuits Optoelectronics


    Original     		PDF 2N1303 2N1303 com/2n1303

    bjt specifications

    Abstract: No abstract text available
    Text: 2N651A Ge PNP Lo-Pwr BJT 9.00 Transistors Bipolar Germanium PNP Low-Power Tra. Page 1 of 2 Enter Your Part # Home Part Number: 2N651A Online Store 2N651A Diodes Ge PNP Lo-Pwr BJT Transistors Enter code INTER3 at checkout.* Integrated Circuits Optoelectronics


    Original     		PDF 2N651A 2N651A com/2n651a bjt specifications

    NTE179

    Abstract: No abstract text available
    Text: NTE179 Germanium PNP Transistor Audio Power Amplifier, High Current Switch Description: The NTE179 is a PNP type germainum transistor in a TO3 type case designed for high–current switching applications requiring low saturation voltages, fast switching times, and good safe operating


    Original     		PDF NTE179 NTE179 100mA 500mA,

    2N1309

    Abstract: No abstract text available
    Text: 2N1309 Ge PNP Lo-Pwr BJT 2.10 Transistors Bipolar Germanium PNP Low-Power Tran. Page 1 of 1 Enter Your Part # Home Part Number: 2N1309 Online Store 2N1309 Diodes Ge PNP Lo -Pwr BJT Transistors Integrated Circuits Optoelectronics In Stock 9081 Brand New Available from $ 2.10


    Original     		PDF 2N1309 2N1309 com/2n1309

    germanium transistors PNP

    Abstract: 2N1307 germanium PNP
    Text: 2N1307 Ge PNP Lo-Pwr BJT 2.75 Transistors Bipolar Germanium PNP Low-Power Tran. Page 1 of 1 Enter Your Part # Home Part Number: 2N1307 Online Store 2N1307 Diodes Ge PN P Lo -Pw r B JT Transistors Enter code INTER3 at checkout.* Integrated Circuits Optoelectronics


    Original     		PDF 2N1307 2N1307 com/2n1307 germanium transistors PNP germanium PNP

    2N700

    Abstract: No abstract text available
    Text: 2N700 Ge PNP Lo-Pwr BJT 12.98 Transistors Bipolar Germanium PNP Low-Power Tran. Page 1 of 1 Enter Your Part # Home Part Number: 2N700 Online Store 2N700 Diodes Ge PN P Lo -Pw r B JT Transistors Enter code INTER3 at checkout.* Integrated Circuits Optoelectronics


    Original     		PDF 2N700 2N700 com/2n700

    Untitled

    Abstract: No abstract text available
    Text: <$£mi-t,onauctoi ^Products., IJna. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2N4048 PNP germanium power transistors designed for high-cur rent applications requiring high gain and extremely low saturation voltage.


    Original     		PDF 2N4048 dc-60Ade,

    germanium transistor pnp

    Abstract: GERMANIUM TRANSISTOR 2N240 S236 de-01 germanium transistor boonton 91-6c
    Text: M[l. -S-l9.il1 J@7B 196s 24 Il:tokr SUl, KrW;. DING MI1.,-S-l WiOO/25A 5 N<>vemlu.r 11359 ,(. MILITARY sEMIcoiwoucToR SPECIFICATION f3EvfcE, TRANSISTOR, PNP, TYPE 2N240 GERMANIUM, LOW-pOWER This Specification is mandatory [or use by all Departments and Agencies


    Original     		PDF WiOO/25A 2N240 uG-491A/U, MIL-S-19500/25B 15SUE. 10UAL germanium transistor pnp GERMANIUM TRANSISTOR 2N240 S236 de-01 germanium transistor boonton 91-6c

    MR830

    Abstract: MP601 germanium power transistors MP600 MP602 MP603 Germanium power
    Text: MP600 GERMANIUM thru PNP Germanium power transistors designed for highcurrent switching applications requiring low saturation voltages, short switching times and good sustaining volt­ age capability. • Alloy Diffused Epitaxial Construction • Low Saturation Voltages —


    OCR Scan     		PDF MP600 MP603 MP600 MP601 MP602 MP603 MR830 germanium power transistors Germanium power

    MP1613

    Abstract: MPT613 adc 515 pnp germanium low power transistor 100-C Germanium power
    Text: MP1613 GERMANIUM S T Y L E 1: PIN I. B A S E 2. E M IT T E R C A S E: C O L L E C T O R Medium-current germanium PNP power transistor, designed for use in 12 Volt: vertical deflection circuits in television receivers; features: high breakdown voltage, low leakage current, and low saturation volt­


    OCR Scan     		PDF MP1613 J001I MP1613 MPT613 adc 515 pnp germanium low power transistor 100-C Germanium power

    2N404 transistor

    Abstract: 2N404 VCE0-20V Germanium power
    Text: DESCRIPTION The CENTRAL SEMICONDUCTOR 2N404 is a Germanium PNP Transistor designed for low frequency medium power amplifier and switching applications. MAXIMUM RATINGS Tfl=25°C Collector-Base Voltage Col 1ector-Emitter Voltage (Punch-through) Emitter-Base Voltage


    OCR Scan     		PDF 7X10-4 2N404 transistor 2N404 VCE0-20V Germanium power

    2N1195

    Abstract: Germanium power
    Text: AMENDMENT 1 19 July 1968 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, LOW POWER TYPE 2N1195 dated 29 June 1967, and is mandatory for use by all Departments and Agencies of the Department of Defense. Page .5 Table I, Group A Inspection, Subgroup 3:


    OCR Scan     		PDF 2N1195 MIL-S-19500/71D, 2N1195 Germanium power

    2N1224

    Abstract: 2N1225
    Text: MIL=S=195QQ/189B AMENDMENT 1 24 February 1978 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, LOW-POWER TYPES 2N1224 AND 2N1225 This amendment forms a part of Military Specifipation MIL-S-19500/189B, dated 18 January 1972, and is a^fioyed for use


    OCR Scan     		PDF MIL-S-19500/189B 2N1224 2N1225 MIL-S-19500/189B, MIL-STD-202" 2N1225

    army sc-c-179495

    Abstract: 2N426 2N428 germanium transistor ac 127 STT 433
    Text: MIL-S-19500/44D •lEJter sh 1970 SUPERSEDING MIL-S-19500/44C 9 April 1962 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, LOW-POWER TYPE 2N428 This specification is mandatory fo r use by all De­ partments and Agencies o f the Department o f Defense.


    OCR Scan     		PDF MIL-S-19500/44D MIL-S-19500/44C 2N428 000-hour MIL-S-19500, MIL-S-19500 army sc-c-179495 2N426 2N428 germanium transistor ac 127 STT 433