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    2N240 Search Results

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    2N240 Price and Stock

    Walsin Technology Corporation 0402N240G500CT

    CAP CER 24PF 50V C0G/NP0 0402
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    0402N240G500CT Cut Tape 8,776 1
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    Mouser Electronics 0402N240G500CT 19,650
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    Bristol Electronics 0402N240G500CT 130,000
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    Walsin Technology Corporation 0402N240J500CT

    CAP CER 24PF 50V C0G/NP0 0402
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    0402N240J500CT Digi-Reel 1
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    0402N240J500CT Reel 10,000
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    Mouser Electronics 0402N240J500CT 24,295
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    Newark 0402N240J500CT Cut Tape 1,068 10
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    0402N240J500CT Reel 10,000
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    TME 0402N240J500CT 10,000
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    Central Semiconductor Corp 2N2405 PBFREE

    TRANS NPN 90V 1A TO39
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    DigiKey 2N2405 PBFREE Bulk 1,012 1
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    Mouser Electronics 2N2405 PBFREE 26
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    JRH Electronics 311BS002N2408N

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    DigiKey 311BS002N2408N Bulk 45 1
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    JRH Electronics 311BS002N2407EN

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    DigiKey 311BS002N2407EN Bulk 27 1
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    2N240 Datasheets (117)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2N240 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N240 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N240 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N240 Unknown Vintage Transistor Datasheets Scan PDF
    2N240 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N240 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N240 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N240 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N240 Unknown GE Transistor Specifications Scan PDF
    2N240 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N240 Sprague Semiconductor Data Book 1977 Scan PDF
    2N2400 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N2400 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N2400 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N2400 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N2400 Unknown Vintage Transistor Datasheets Scan PDF
    2N2400 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N2400 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N2400 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N2400 Unknown Shortform Transistor PDF Datasheet Short Form PDF

    2N240 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N2405

    Abstract: No abstract text available
    Text: 2N2405 MEDIUM POWER SILICON NPN PLANAR TRANSISTOR MECHANICAL DATA Dimensions in mm inches 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) FEATURES 4.19 (0.165) 4.95 (0.195) 12.70 (0.500) min. • For Operation at Junction Temperature up to 200°C 0.89 max.


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    PDF 2N2405 20MHz 2N2405

    2N2405

    Abstract: transistor 1150
    Text: 2N2405 Medium Power Silicon N-P-N Planar Transistor. 11.50 Transisto. 1 of 1 Home Part Number: 2N2405 Online Store 2N2405 Diodes M edium Po w er Silic o n N- P- N Planar Trans is to r. Transistors Enter code INTER3 at


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    PDF 2N2405 com/2n2405 2N2405 transistor 1150

    Untitled

    Abstract: No abstract text available
    Text: 2N2404 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)60â V(BR)CBO (V)60 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)200þ I(CBO) Max. (A)1.0u @V(CBO) (V) (Test Condition)30 h(FE) Min. Current gain.40 h(FE) Max. Current gain.120


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    PDF 2N2404 Freq150M

    Untitled

    Abstract: No abstract text available
    Text: 2N2402 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)12 V(BR)CBO (V)18 I(C) Max. (A)100m Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)100þ I(CBO) Max. (A)1.5u @V(CBO) (V) (Test Condition)5.0 h(FE) Min. Current gain.60 h(FE) Max. Current gain.


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    PDF 2N2402 Freq250M

    Untitled

    Abstract: No abstract text available
    Text: 2N2400 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)7.0 V(BR)CBO (V)12 I(C) Max. (A)100m Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)100þ I(CBO) Max. (A)3.0u @V(CBO) (V) (Test Condition)5.0 h(FE) Min. Current gain.30 h(FE) Max. Current gain.


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    PDF 2N2400 Freq150M

    Untitled

    Abstract: No abstract text available
    Text: 2N240 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)6.0 V(BR)CBO (V) I(C) Max. (A)25m Absolute Max. Power Diss. (W)10m Maximum Operating Temp (øC)85þ I(CBO) Max. (A)3.0u @V(CBO) (V) (Test Condition)5.0 h(FE) Min. Current gain.17Â h(FE) Max. Current gain.


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    PDF 2N240 Freq30M

    2N2405

    Abstract: No abstract text available
    Text: 2N2405 MEDIUM POWER SILICON NPN PLANAR TRANSISTOR MECHANICAL DATA Dimensions in mm inches 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) FEATURES 4.19 (0.165) 4.95 (0.195) 12.70 (0.500) min. • For Operation at Junction Temperature up to 200°C 0.89 max.


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    PDF 2N2405 O-205AD) 2N2405

    Untitled

    Abstract: No abstract text available
    Text: 2N2405 w w w. c e n t r a l s e m i . c o m SILICON NPN TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2405 is a silicon NPN epitaxial planar transistor designed for small signal general purpose switching applications. MARKING: FULL PART NUMBER TO-39 CASE


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    PDF 2N2405 2N2405 150mA, 150mA 20MHz

    Untitled

    Abstract: No abstract text available
    Text: 2N2403 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)60â V(BR)CBO (V)60 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)200þ I(CBO) Max. (A)1.0u @V(CBO) (V) (Test Condition)30 h(FE) Min. Current gain.20 h(FE) Max. Current gain.60


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    PDF 2N2403 Freq150M Code3-12

    2SC1018

    Abstract: sk3024 2S01664 2S01526 2N3925 2N3818 2S01005 bly14 PTC144 2N3718
    Text: RF POWER SILICON NPN Item Number Part Number I C 5 10 >= 20 25 30 2N3444 ZTX451 2N2404 2N2404 2N3818 2SC777 ZTX452 2SC1517AK :iK3024 SK3024 ZTX453 PTC144 2S01005 2S01005 B2-8Z B3-12 S01574 40450 ~~9~~0 35 40 TP3253 2N3253 BFX51 BFX61 BlY14 2SC140 TP3252


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    PDF 2S01280 2SC1568 2SC1518 ZTX449 2S01664 2S01225M 2SC1018 sk3024 2S01526 2N3925 2N3818 2S01005 bly14 PTC144 2N3718

    Untitled

    Abstract: No abstract text available
    Text: ., fine. 20 STERN AVE SPRINGFIELD, NEW JERSEY 07081 U.SA TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2N2405 MEDIUM POWER SILICON NPN PLANAR TRANSISTOR MECHANICAL DATA Dimensions in mm (inches) FEATURES • For Operation at Junction Temperature up


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    PDF 2N2405 300jis 20MHz

    TIP290

    Abstract: 2N4001 diode MJ029C 2SC1624Y TIP-290 2N2202 BDY66 2SC16250 2N2204 TO-202AC
    Text: POWER SILICON NPN Item Number Part Number I e 5 10 15 20 >= 30 BC618l 2N2405 2N2405S 2N2405S oTl1634 2N2611 SSP58C MJ029C b!F~f~4 35 40 BD400 2N2201 2N2202 2N2203 2N2204 2N2988 2N2992 2N2472 ~~~:~~ 45 50 2N2995 STll0 STll05 SVT100-5 DTl1654 2N5681 2N4001


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    PDF O-220var OT-186 O-220 O-220AB TIP290 2N4001 diode MJ029C 2SC1624Y TIP-290 2N2202 BDY66 2SC16250 2N2204 TO-202AC

    germanium transistor pnp

    Abstract: GERMANIUM TRANSISTOR 2N240 S236 de-01 germanium transistor boonton 91-6c
    Text: M[l. -S-l9.il1 J@7B 196s 24 Il:tokr SUl, KrW;. DING MI1.,-S-l WiOO/25A 5 N<>vemlu.r 11359 ,(. MILITARY sEMIcoiwoucToR SPECIFICATION f3EvfcE, TRANSISTOR, PNP, TYPE 2N240 GERMANIUM, LOW-pOWER This Specification is mandatory [or use by all Departments and Agencies


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    PDF WiOO/25A 2N240 uG-491A/U, MIL-S-19500/25B 15SUE. 10UAL germanium transistor pnp GERMANIUM TRANSISTOR 2N240 S236 de-01 germanium transistor boonton 91-6c

    2SA144

    Abstract: 2N2416 Low-Power Germanium PNP 2G309 OC45 2SA144 to-92s GT1606 ac107
    Text: LOW-POWER GERMANIUM PNP Item Number Part Number -10 TR64 2N964A GT1606 GT1606 2SA156 OC45 2SA201 NKT143 NKT144 OC43N ~~~~g 15 20 2G345 2G345 2N2401 2N779 2N779A MA113 MA113 MA116 ~~~d: 25 30 NKT261 NKT271 2SA202 2SA202 2N606 2SA160 AC107 AC107 ~~~~1 35 40


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    PDF O-22var 2SA144 2N2416 Low-Power Germanium PNP 2G309 OC45 2SA144 to-92s GT1606 ac107

    Untitled

    Abstract: No abstract text available
    Text: 2N2401 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)10 V(BR)CBO (V)15 I(C) Max. (A)100m Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)100þ I(CBO) Max. (A)1.5u @V(CBO) (V) (Test Condition)5.0 h(FE) Min. Current gain.50 h(FE) Max. Current gain.


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    PDF 2N2401 Freq200M

    Untitled

    Abstract: No abstract text available
    Text: 2N2405 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)90 V(BR)CBO (V)120 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)200þ I(CBO) Max. (A)10n @V(CBO) (V) (Test Condition)90 V(CE)sat Max. (V).50 @I(C) (A) (Test Condition)150m


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    PDF 2N2405

    Untitled

    Abstract: No abstract text available
    Text: 2N2405S Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)90 V(BR)CBO (V)120 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)175þ I(CBO) Max. (A)10nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    PDF 2N2405S

    2n2405

    Abstract: 2N1893
    Text: 4302271 üün7ô3 4 HHAS P o w e r Tran sistors File N u m b e r 34 Medium-Power Silicon N-P-N Planar Transistors 2N1893, 2N2405 I ' 3 3 - 0 5 TERMINAL DESIGNATIONS For S m a ll-S ig n a l A p p lic a tio n s In In d u strial and C o m m e rc ia l E q u ip m e n t


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    PDF 2N1893, 2N2405 2N1893 2N2405* 2N2405. 10VOLTS 2n2405

    Untitled

    Abstract: No abstract text available
    Text: m 2N2405 \ \ SILICON NPN TRANSISTOR DESCRIPTION: The 2N2405 is Designed for General Purpose Amplifier, and Switching Applications. MAXIMUM RATINGS 1.0 A lc 90 V V ce P d is s 1.0 W @ TA = 25 °C P d is s 5.0 W @ Tc = 25 °C T j -65 °C to +200 °C T stg -65 °C to +200 °C


    OCR Scan
    PDF 2N2405 2N2405

    2N2405

    Abstract: C2035
    Text: ÀSII 2N2405 SILICON NPN TRANSISTOR DESCRIPTION: The 2N2405 is Designed for General Purpose Amplifier, and Switching Applications. PACKAGE STYLE TO- 39 MAXIMUM RATINGS Ie 1.O A Vc e 9O V pd is s 1.O W @ Ta " 25 0C pd is s 5.O W @ Te " 25 0C Tj -65 0C to +2OO 0C


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    PDF 2N2405 2N2405 C2035

    2N2405

    Abstract: 2N1893 transistor KD 503 RCA-2N2405 kd 503 transistor TA2235A RCA-ZN1893 TA2235
    Text: G E SOLID STATE 3875081 □ 1 G E S O LI D S TAT E DE I 3Ö7SDÖ1 GD17CHE 5 | ~ 01E 17092 D -T -2 J-Z 3 _mgn-speea rower Transistors File N u m b e r 3 4 Medium-Power Silicon N-P-N Planar Transistors 2N1893, 2N2405 TERMINAL DESIGNATIONS For S m a ll-S ig n a l A p plic a tio n s


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    PDF RCA-ZN1893 2N2405* RCA-2N2405 2N1893 2N2405 2N240S. transistor KD 503 kd 503 transistor TA2235A TA2235

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    PDF

    2n3053A complementary

    Abstract: 40362 2N4036 BUX40A 40319 2n4314 2N1893 2N2102 2N2270 2N3053
    Text: THOflSON/ D IS T R IB U T O R SÔE D • =102^073 000572b OflO ■ TCSK Bipolar Power Transistors High-Speed Switching h p E at V c e “ 10V V c E » a t 'V C u rren t - mA T yp e No. v CEO<su9> V vc er (* u ) Pt w V 7W max 2N2102 FA M ILY (n-p-n) 2N697


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    PDF a00S72b 2N2102 2N4036 120MHz 2N697 2N1613 2N3053 2N2270 T0205AD/ 2N3053A 2n3053A complementary 40362 BUX40A 40319 2n4314 2N1893

    Untitled

    Abstract: No abstract text available
    Text: niCRO ELECTRONICS LTD SIE » • bDT17ôô ODGlOflT =153 ■ HEHK Medium Power Amplifiers and Switches TYPE NO. POLARITY T-27-01 CASE H MAXIM UM RATINGS Pd ImW 'c A) V CEO (V) FE V CE(SAT) ’c min max Im A) VCE (V) max 'c (V) (A) fT min Cob COMPLE­ max


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    PDF bDT17Ã T-27-01 2N4036 2N2017 2N2049 2N2102 2N2102A 2N2192 2N2192A 2N2192B