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    PN100 TRANSISTOR Search Results

    PN100 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    PN100 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SOT23 MARK Y3

    Abstract: NPN Transistor PN100A PN100A
    Text: PN100 / MMBT100 / PN100A / MMBT100A PN100 PN100A MMBT100 MMBT100A C E C B TO-92 SOT-23 E B Mark: NA / NA1 NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 10.


    Original     		PDF PN100 MMBT100 PN100A MMBT100A PN100A OT-23 SOT23 MARK Y3 NPN Transistor PN100A

    NPN Transistor PN100A

    Abstract: CBVK741B019 F63TNR MMBT100 MMBT100A PN100 PN100A PN2222N PN100 TRANSISTOR
    Text: PN100 / MMBT100 / PN100A / MMBT100A PN100 PN100A MMBT100 MMBT100A C E C B TO-92 SOT-23 E B Mark: NA / NA1 NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 10.


    Original     		PDF PN100 MMBT100 PN100A MMBT100A PN100 PN100A MMBT100 OT-23 NPN Transistor PN100A CBVK741B019 F63TNR MMBT100A PN2222N PN100 TRANSISTOR

    PNP 3-224

    Abstract: NPN Transistor PN100A 2N3906 Darlington transistor 2n3904 TRANSISTOR PNP PNP 2N3904 TRANSISTOR 3182 2N3906 NPN Transistor PNP switching transistor 2N3906 transistor 338 TN6715A
    Text: Section 3 Bipolar Transistors PN100 / PN100A / MMBT100 / MMBT100A NPN GPA . 3-4 PN200 / PN200A / MMBT200 / MMBT200A PNP GPA . 3-7 FPN330 / FPN330A NPN Low Saturation Transistor . 3-11


    Original     		PDF PN100 PN100A MMBT100 MMBT100A PN200 PN200A MMBT200 MMBT200A FPN330 FPN330A PNP 3-224 NPN Transistor PN100A 2N3906 Darlington transistor 2n3904 TRANSISTOR PNP PNP 2N3904 TRANSISTOR 3182 2N3906 NPN Transistor PNP switching transistor 2N3906 transistor 338 TN6715A

    pnp pn100 transistor

    Abstract: PN100 TRANSISTOR transistor pn100 pn200 PN100 PN100A PN200A
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTORS PN200 PN200A TO-92 Plastic Package EB C COMPLEMENTARY PN100, PN100A ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise


    Original     		PDF PN200 PN200A PN100, PN100A C-120 Rev270302D pnp pn100 transistor PN100 TRANSISTOR transistor pn100 pn200 PN100 PN100A PN200A

    pn200

    Abstract: PN100 PN100A PN200A pnp pn100 transistor transistor pn100
    Text: IS/ISO 9002 Lic# QSC/L-000019.3 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP SILICON PLANAR EPITAXIAL TRANSISTORS PN200 PN200A TO-92 Plastic Package EB C COMPLEMENTARY PN100, PN100A ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise


    Original     		PDF QSC/L-000019 PN200 PN200A PN100, PN100A C-120 Rev270302D pn200 PN100 PN100A PN200A pnp pn100 transistor transistor pn100

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTORS PN200 PN200A TO-92 Plastic Package EB C COMPLEMENTARY PN100, PN100A ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise


    Original     		PDF PN200 PN200A PN100, PN100A C-120 Rev270302D

    2N3704

    Abstract: equivalent transistor 2n3704 F63TNR PN100 PN2222N CBVK741B019 2N3704 circuit
    Text: 2N3704 2N3704 B C TO-92 E NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100 for characteristics. Absolute Maximum Ratings* Symbol


    Original     		PDF 2N3704 PN100 2N3704 equivalent transistor 2n3704 F63TNR PN2222N CBVK741B019 2N3704 circuit

    Untitled

    Abstract: No abstract text available
    Text: 2N5172 2N5172 B C TO-92 E NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100 for characteristics. Absolute Maximum Ratings* Symbol


    Original     		PDF 2N5172 PN100

    2N3859A

    Abstract: PN100
    Text: 2N3859A 2N3859A NPN General Purpose Amplifier • This device designed for use as general purpose amplifier and switches requiring collector currents to 300mA. • Sourced from Process 10. • See PN100 for characteristics. TO-92 1 1. Emitter 2. Collector 3. Base


    Original     		PDF 2N3859A 300mA. PN100 2N3859A

    Untitled

    Abstract: No abstract text available
    Text: 2N3859A 2N3859A NPN General Purpose Amplifier • This device designed for use as general purpose amplifier and switches requiring collector currents to 300mA. • Sourced from Process 10. • See PN100 for characteristics. TO-92 1 1. Emitter 2. Collector 3. Base


    Original     		PDF 2N3859A 300mA. PN100

    2N3704

    Abstract: equivalent transistor 2n3704 PN100 2N3704 circuit
    Text: 2N3704 2N3704 NPN General Purpose Amplifier • This device designed for use as general purpose amplifier and switches requiring collector currents to 300mA. • Sourced from Process 10. • See PN100 for characteristics. TO-92 1 1. Emitter 2. Collector 3. Base


    Original     		PDF 2N3704 300mA. PN100 2N3704 equivalent transistor 2n3704 2N3704 circuit

    MPS8098

    Abstract: CBVK741B019 F63TNR PN100 PN2222N
    Text: MPS8098 C TO-92 BE NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		PDF MPS8098 PN100 MPS8098 CBVK741B019 F63TNR PN2222N

    PN3565

    Abstract: CBVK741B019 F63TNR PN100 PN2222N
    Text: PN3565 C TO-92 BE NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		PDF PN3565 PN100 PN3565 CBVK741B019 F63TNR PN2222N

    PN3643

    Abstract: CBVK741B019 F63TNR PN100 PN2222N
    Text: PN3643 C TO-92 BE NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		PDF PN3643 PN100 PN3643 CBVK741B019 F63TNR PN2222N

    PN4141

    Abstract: CBVK741B019 F63TNR PN100 PN2222N TO-92 Package Dimensions
    Text: PN4141 C TO-92 BE NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		PDF PN4141 PN100 PN4141 CBVK741B019 F63TNR PN2222N TO-92 Package Dimensions

    2N3859A

    Abstract: 2N3859 F63TNR PN100 PN2222N CBVK741B019
    Text: 2N3859A E TO-92 CB NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		PDF 2N3859A PN100 2N3859A 2N3859 F63TNR PN2222N CBVK741B019

    2N5172

    Abstract: CBVK741B019 F63TNR PN100 PN2222N 2n5172 transistor
    Text: 2N5172 2N5172 B C TO-92 E NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100 for characteristics. Absolute Maximum Ratings* Symbol


    Original     		PDF 2N5172 PN100 2N5172 CBVK741B019 F63TNR PN2222N 2n5172 transistor

    2N3704

    Abstract: No abstract text available
    Text: 2N3704 2N3704 NPN General Purpose Amplifier • This device designed for use as general purpose amplifier and switches requiring collector currents to 300mA. • Sourced from Process 10. • See PN100 for characteristics. TO-92 1 1. Emitter 2. Collector 3. Base


    Original     		PDF 2N3704 300mA. PN100 2N3704

    transistor BC 157

    Abstract: TIS97 CBVK741B019 F63TNR PN100 PN2222N
    Text: TIS97 E TO-92 BC NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		PDF TIS97 PN100 transistor BC 157 TIS97 CBVK741B019 F63TNR PN2222N

    BF208

    Abstract: 8K*8 sram 70V7278 70V7288 70V7339 70V7519 70V7599 AN-306 5646 BC256
    Text: BANK-SWITCHABLE APPLICATION DUAL-PORTS' NOTE FREQUENTLY ASKED QUESTIONS AN-306 What is a bank-switchable dualport? A bank-switchable dual-port or BSDP is an innovative multi-port memory solution that allows simultaneous access to common memory from two separate ports at


    Original     		PDF AN-306 BF-208) BC256) DR-208) BF208 8K*8 sram 70V7278 70V7288 70V7339 70V7519 70V7599 AN-306 5646 BC256

    transistor 2N3563

    Abstract: 2n3819 cross reference 2SK30 2SA726 2sk41e 2SC1026 transistor 2sc1417 2Sa1026 2SC2259 BC150 transistor
    Text: Section 1 Cross Reference Guide . 1-3 Process Selection Guides Preferred Part Numbers by Process .


    Original     		PDF

    BC548

    Abstract: BC338 BC338-16 BC338-25 BC338-40 BC368 BC547C BC548A BC548B BC548C
    Text: Small Signal General Purpose Transistors Part No. and Polarity NPN BC547C BC548A BC548B BC548C BC338 BC338-16 BC338-25 BC338-40 BC368 MPS8099 KSP8099 MPSA06 KSP06 MPS8098 KSP8098 MPSA05 KSP05 MPS6602 MPS2222A KSP2222A MPS6513 MPSA10 MPSA20 MPS2222 KSP2222


    Original     		PDF BC547C BC548A BC548B BC548C BC338 BC338-16 BC338-25 BC338-40 BC368 MPS8099 BC548 BC338 BC338-16 BC338-25 BC338-40 BC368 BC547C BC548A BC548B BC548C

    2N2210

    Abstract: TIS92 TN2218A transistor 2N2210 2N3827 PN3694 TIS90 2N2270 2N2586 2N5962
    Text: NATL SEMICOND DISCRETE 5SE D • bS01130 D037774 7 ■ NPN General Purpose Transistors by Ascending Vceo (continued) Vceo(V) Vcbo (V) Min Min Min Max (mA/V) PN5816 TIS90 TIS92 TIS97 TN2218A TN2219A 40 40 40 40 40 40 50 40 40 100 100 100 250 40 100 200 300


    OCR Scan     		PDF bS01130 D037774 PN5816 TIS90 TIS92 TIS97 TN2218A O-237 TN2219A 2N2210 transistor 2N2210 2N3827 PN3694 2N2270 2N2586 2N5962

    TIS90

    Abstract: MPS6566 TIS97
    Text: NATL SEMICOND DISCRETE 22E D • bS01130 D03777M 7 ■ NPN General Purpose Transistors by Ascending Vceo (continued) • H,e Ft (MHz) Min Vceo (V) VCbo(V) Min Min Min Max (mA/V) PN5816 TIS90 TIS92 TIS97 TN2218A TN2219A 40 40 40 40 40 40 50 40 40 100 100


    OCR Scan     		PDF bS01130 D03777M PN5816 TIS90 TIS92 TIS97 TN2218A TN2219A 2N2270 2N2586 MPS6566