PJ4N
Abstract: No abstract text available
Text: PJ4N3KDW 30V Dual N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS ON , VGS@4.0V,IDS@10mA=5.0 0.018(0.45) 0.006(0.15) • RDS(ON), VGS@2.5V,IDS@1mA=7.0 0.087(2.20) 0.074(1.90) • Advanced Trench Process Technology 0.030(0.75) 0.021(0.55)
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Untitled
Abstract: No abstract text available
Text: PJ4N3KDW 30V Dual N-Channel Enhancement Mode MOSFET - ESD Protected SOT-363 FEATURES Unit：inch mm • Advanced Trench Process Technology 0.087(2.20) 0.074(1.90) • High Density Cell Design For Ultra Low On-Resistance 0.010(0.25) • The MOSFET elements are independent,eliminating interference
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OT-363
RB500V-40
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Untitled
Abstract: No abstract text available
Text: PJ4N3KDW 30V Dual N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS ON , VGS@2.5V,IDS@1mA=7.0 • RDS(ON), VGS@4.0V,IDS@10mA=5.0 • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • The MOSFET elements are independent,eliminating interference
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2011/65/EU
2013-REV
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PJ4N
Abstract: PJ4N3KDW MARKING GA SOT-363 DM800
Text: PJ4N3KDW 30V Dual N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS ON , VGS@2.5V,IDS@1mA=7.0Ω • RDS(ON), VGS@4.0V,IDS@10mA=5.0Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • The MOSFET elements are independent,eliminating interference
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2002/95/EC
OT-363
PJ4N
PJ4N3KDW
MARKING GA SOT-363
DM800
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PJ4N
Abstract: marking code ga sot 363 MARKING CODE LA sot363 sot-363 marking DS marking CODE GA sot363 ZE marking sot-363 SOT 363 marking CODE LA sot363 XI PJ4N3KDW
Text: PJ4N3KDW 30V Dual N-Channel Enhancement Mode MOSFET - ESD Protected SOT-363 FEATURES Unit：inch mm • RDS(ON), VGS@4.0V,IDS@10mA=5.0Ω • Advanced Trench Process Technology 0.087(2.20) 0.074(1.90) • High Density Cell Design For Ultra Low On-Resistance
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2002/95/EC
IEC61249
OT-363
RB500V-40
PJ4N
marking code ga sot 363
MARKING CODE LA sot363
sot-363 marking DS
marking CODE GA sot363
ZE marking sot-363
SOT 363 marking CODE LA
sot363 XI
PJ4N3KDW
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HF99
Abstract: NS102 NEC 2561 inductive proximity sensor pj5n PJ6N PJ 956 PE 4100 Nippon capacitors pci express tlp
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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H8S/2117R
REJ09B0452-0200
HF99
NS102
NEC 2561
inductive proximity sensor
pj5n
PJ6N
PJ 956
PE 4100
Nippon capacitors
pci express tlp
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F2117LP
Abstract: PJ6N pj5n pj7n 213 1300 PJ3N r4f2117 F2117 KD 502 KBU 106
Text: REJ09B0350-0200 The revision list can be viewed directly by clicking the title page. The revision list summarizes the locations of revisions and additions. Details should always be checked by referring to the relevant text. 16 H8S/2117Group Hardware Manual
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REJ09B0350-0200
H8S/2117Group
16-Bit
H8S/2100
H8S/2117
R4F2117
H8S/2117
F2117LP
PJ6N
pj5n
pj7n
213 1300
PJ3N
r4f2117
F2117
KD 502
KBU 106
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r4f2117
Abstract: F2117 F2117LP 8086 convertion from decimal to binary program GSM modem M10 f2117lp20v BGA PACKAGE OUTLINE PJ6N gsm modem sim 900 IER16
Text: REJ09B0350-0300 The revision list can be viewed directly by clicking the title page. The revision list summarizes the locations of revisions and additions. Details should always be checked by referring to the relevant text. 16 H8S/2117Group Hardware Manual
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REJ09B0350-0300
H8S/2117Group
16-Bit
H8S/2100
H8S/2117
R4F2117
H8S/2117
r4f2117
F2117
F2117LP
8086 convertion from decimal to binary program
GSM modem M10
f2117lp20v
BGA PACKAGE OUTLINE
PJ6N
gsm modem sim 900
IER16
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R4F2113
Abstract: r4f2113nft PJ4N P237T P-LFBGA-176 H8S 2377 BBR13 R4F2113NBG
Text: User's Manual H8S/2113 Group 16 User’s Manual: Hardware Renesas 16-Bit Single-Chip Microcomputer H8S Family / H8S/2100 Series H8S/2113 R4F2113 All information contained in these materials, including products and product specifications, represents information on the product at the time of publication and is
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H8S/2113
16-Bit
H8S/2100
R4F2113
R01UH0179EJ0100
R4F2113
r4f2113nft
PJ4N
P237T
P-LFBGA-176
H8S 2377
BBR13
R4F2113NBG
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F2117LP
Abstract: R4F2117 FZTAT256V3A transistor daa 40 470 D10 Nippon capacitors
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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H8S/2117
REJ09B0350-0300
F2117LP
R4F2117
FZTAT256V3A
transistor daa 40
470 D10
Nippon capacitors
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ic cir 2272
Abstract: cir 2272 C-MAC 10MHz a1 F2117 H8S/2117 KD 472 M ic tlp 759 TLP-145V 8086 convertion from decimal to binary program MS7 package
Text: REJ09B0452-0100 16 H8S/2117R Group Hardware Manual Renesas 16-Bit Single-Chip Microcomputer H8S Family / H8S/2100 Series H8S/2117R R4F2117R All information contained in this material, including products and product specifications at the time of publication of this material, is subject to change by
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REJ09B0452-0100
H8S/2117R
16-Bit
H8S/2100
H8S/2117R
R4F2117R
th2377-3473
ic cir 2272
cir 2272
C-MAC 10MHz a1
F2117
H8S/2117
KD 472 M
ic tlp 759
TLP-145V
8086 convertion from decimal to binary program
MS7 package
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