MF-1134
Abstract: SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL gas detector NDL5405 NDL5405C NDL5430C NDL5430CR NDL5471RC NDL5490 NDL5490L
Text: PRELIMINARY DATA SHEET PHOTO DIODE NDL5430C Series 1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS for 10 Gb/s f30 mm InGaAs PIN PHOTO DIODE DESCRIPTION NDL5430C Series are InGaAs PIN photo diodes for 10 Gb/s long wavelength transmission systems. It covers
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NDL5430C
NDL5430C
NDL5430CR
MF-1134
SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL
gas detector
NDL5405
NDL5405C
NDL5430CR
NDL5471RC
NDL5490
NDL5490L
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Photo Diodes
Abstract: PD739A13 TIA AGC application note tia amplifier ghz TIA application note mitsubishi receiver pin photo diodes
Text: MITSUBISHI PHOTO DIODES PD739A13 InGaAs PIN PHOTO DIODES PD739A13 Feature DESCRIPTION PD739A13 is a φ20µm InGaAs pin photodiodes with Trans-Impedance Amplifier TIA . This PD with TIA features a high-speed response and low noise, and is suitable for 2.5Gb/s optical
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PD739A13
PD739A13
10MHz-1
488G/s,
180um
Photo Diodes
TIA AGC application note
tia amplifier ghz
TIA application note
mitsubishi receiver
pin photo diodes
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1300nm
Abstract: PD793D26 PD7XX26 PIN 1300nm pin photo diodes
Text: MITSUBISHI PHOTO DIODES PD7XX26 SERIES InGaAs PIN PHOTO DIODES PD793D26 Feature DESCRIPTION PD793D26 Series are InGaAs pin photodiodes which has a sensitive area of φ 20µm. PD7XX26 is suitable for receving the light having a wavelength band of 1000 to 1600nm.
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PD7XX26
PD793D26
PD793D26
1600nm.
1600nm
1300nm
1300nm,
1300nm
PIN 1300nm
pin photo diodes
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Photo Diodes
Abstract: tia amplifier ghz PD739C13 mitsubishi receiver
Text: MITSUBISHI PHOTO DIODES PD739C13 InGaAs PIN PHOTO DIODES PD739C13 Feature DESCRIPTION PD739C13 is a φ20µm InGaAs pin photodiodes with Trans-Impedance Amplifier TIA . This PD with TIA features a high-speed response and low noise, and is suitable for 2.5Gb/s optical
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PD739C13
PD739C13
488G/s,
180um
Photo Diodes
tia amplifier ghz
mitsubishi receiver
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Alumina submount
Abstract: PD7087 PD708C7 PD7937 PD793D7 mitsubishi receiver
Text: MITSUBISHI PHOTO DIODES PD7XX7 SERIES InGaAs PIN PHOTO DIODES PD7087, PD708C7, PD7937, PD793D7 Feature DESCRIPTION PD7XX7 Series are InGaAs pin photodiodes which has a sensitive area of φ 40µm. PD7XX7 is suitable for receving the light having a wavelength band of 1000 to 1600nm.
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PD7087,
PD708C7,
PD7937,
PD793D7
1600nm.
1600nm
PD708C7)
PD708C7
PD7937
Alumina submount
PD7087
PD708C7
PD7937
PD793D7
mitsubishi receiver
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InGaAs quadrant
Abstract: C30822E UV245BG UV-215BQ C30971 C30641EH-TC FFD-100 YAG-100A
Text: Photodiodes for High-Performance Applications PIN Photo- PIN Photodiodes InGaAs and Si PIN Diodes, Quadrant Detectors, UV-Enhanced diodes For Industrial Applications InGaAs and Si PIN Diodes – Quadrant Detectors – UV-Enhanced Applications • Telecom
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C30845EH
YAG-444-4AH
DTC-140H
InGaAs quadrant
C30822E
UV245BG
UV-215BQ
C30971
C30641EH-TC
FFD-100
YAG-100A
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MXP4000
Abstract: MXP4001 MXP4002 MXP4003 laser diode 10mw 1550nm construction of photo diode MXP400X
Text: MXP4000 – Monitor InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS PRODUCTION DATA SHEET KEY FEATURES DESCRIPTION The MXP400x series of photo diodes are currently offered in die form allowing manufacturers the versatility of custom assembly configurations.
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MXP4000
MXP400x
1310nm
1550nm
MXP4001
00E-12
MXP4002
MXP4000
MXP4001
MXP4002
MXP4003
laser diode 10mw 1550nm
construction of photo diode
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photo diode
Abstract: MXP4003 photo diode 10 Gbps pin photo diode MXP4000 sdh microsemi photo diode pin 10 Gbps "Photo Diode" construction of photo diode 1550nm 10mW photo diode
Text: MXP4003 – 10 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS PRODUCTION DATA SHEET KEY FEATURES DESCRIPTION The MXP4000 series of photo diodes are currently offered in die form allowing manufacturers the versatility of custom assembly configurations.
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MXP4003
MXP4000
1310nm
1550nm
MXP4003
photo diode
photo diode 10 Gbps
pin photo diode
sdh microsemi
photo diode pin 10 Gbps
"Photo Diode"
construction of photo diode
1550nm 10mW photo diode
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construction of photo diode
Abstract: MXP4000 MXP4001 MXP4002 MXP4003 PHOTO diode
Text: MXP4001 – 622 Mbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS PRODUCTION DATA SHEET KEY FEATURES DESCRIPTION The MXP400x series of photo diodes are currently offered in die form allowing manufacturers the versatility of custom assembly configurations.
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MXP4001
MXP400x
1310nm
1550nm
00E-11
MXP4000
00E-12
construction of photo diode
MXP4000
MXP4001
MXP4002
MXP4003
PHOTO diode
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PIN PHOTO DIODE
Abstract: "Photo Diode" photo diode construction of photo diode MXP4002 IR PHOTO DIODE amplifier MXP4000
Text: MXP4002 – 2.5 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS PRODUCTION DATA SHEET KEY FEATURES DESCRIPTION The MXP4000 series of photo diodes are currently offered in die form allowing manufacturers the versatility of custom assembly configurations.
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MXP4002
MXP4000
1310nm
1550nm
MXP4002
PIN PHOTO DIODE
"Photo Diode"
photo diode
construction of photo diode
IR PHOTO DIODE amplifier
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1550nm photo diode for 10Gbps
Abstract: construction of photo diode MXP4005 1550nm catv receiver MXP4003 IR PHOTO DIODE amplifier 1550nm optical device 1550nm 10mW photo diode
Text: MXP4005 – 12.7 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS PRODUCTION DATA SHEET KEY FEATURES DESCRIPTION The MXP400X series of photo diodes are currently offered in die form allowing manufacturers the versatility of custom assembly configurations.
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MXP4005
MXP400X
12GHz
1310nm
1550nm
1550nm
1430nm
1550nm photo diode for 10Gbps
construction of photo diode
MXP4005
1550nm catv receiver
MXP4003
IR PHOTO DIODE amplifier
1550nm optical device
1550nm 10mW photo diode
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Untitled
Abstract: No abstract text available
Text: MXP4003 – 10 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS PRODUCT SPECIFICATION KEY FEATURES DESCRIPTION The device series offers superior noise performance and sensitivity due to their planar construction and passivation. The MXP4000 series of photo diodes
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MXP4003
MXP4000
1430nm
1550nm
MXP4003
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25um
Abstract: No abstract text available
Text: MXP4003 – 10 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION The device series offers superior noise performance and sensitivity due to their planar construction and passivation. The MXP4000 series of photo diodes
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MXP4003
1310nm
1550nm
MXP4000
1550nm
1430nm
MXP4003
25um
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ED 08 diode
Abstract: ED 03 Diode
Text: Obsolete Product – not recommended for new design MXP4003 – 10 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS PRODUCTION DATA SHEET KEY FEATURES DESCRIPTION The MXP4000 series of photo diodes are currently offered in die form allowing manufacturers the
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MXP4003
1310nm
1550nm
dev61
MXP4003
ED 08 diode
ED 03 Diode
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1550nm photo diode for 10Gbps
Abstract: MXP4003 MXP4005
Text: MXP4005 – 12.7 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS PRODUCT KEY FEATURES DESCRIPTION The device series offers superior noise performance and sensitivity due to their planar construction and passivation. . The MXP400X series of photo diodes are currently offered in die
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MXP4005
MXP400X
12GHz
1550nm
508um
1430nm
1550nm
1550nm photo diode for 10Gbps
MXP4003
MXP4005
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OD9604N
Abstract: No abstract text available
Text: OD9601N, OD9602N, and OD9604 Photo Diode Preamp Module Family InGaAs Technology + 3.3 V INTRODUCTION Oki Semiconductor’s OD9601N, OD9602N, and OD9604N PD Preamp Module Family are surface-mount 1.3-µm, InGaAs PIN photo diodes combined with a transimpedance amplifier. The OD9601N operates at
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OD9601N,
OD9602N,
OD9604
OD9604N
OD9601N
STM4/OC12/OC24
OD9602N
STM4/OC12
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VCSEL array, 850nm flip
Abstract: No abstract text available
Text: LX3044/45/46 10.3 Gbps Coplanar GaAs PIN Photo Diode Family OPTO-ELECTRONIC PRODUCTS PRELIMINARY KEY FEATURES DESCRIPTION The device family offers superior noise performance and sensitivity in single die, 1x4 array die or 1x12 array die. The LX304X family of photo diodes
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LX3044/45/46
850nm
LX304X
LX3044
LX3045
LX3046
VCSEL array, 850nm flip
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VCSEL array, 850nm flip
Abstract: VCSEL array, 850nm, flip chip amplifier CV 203 VCSEL array, 850nm GaAs array, 850nm PIN photodiode 850nm LX3044 LX3045 LX3046 PIN PHOTO DIODE
Text: LX3044/45/46 10.3 Gbps Coplanar GaAs PIN Photo Diode Family OPTO-ELECTRONIC PRODUCTS PRELIMINARY KEY FEATURES DESCRIPTION The device family offers superior noise performance and sensitivity in single die, 1x4 array die or 1x12 array die. The LX304X family of photo diodes
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LX3044/45/46
LX304X
LX3044
LX3045,
LX3046,
50ohm
LX3045
LX3046
VCSEL array, 850nm flip
VCSEL array, 850nm, flip chip
amplifier CV 203
VCSEL array, 850nm
GaAs array, 850nm
PIN photodiode 850nm
LX3045
LX3046
PIN PHOTO DIODE
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LC2269
Abstract: No abstract text available
Text: N E C ELECTRONICS INC b2E D • b45752S 0035102 T1H « N E C E DATA SHEET |\|E C PHOTO DIODES NDL5408P, NDL5408P1 ELECTRON DEVICE 1 3 00 nm OPTICAL ANALOG CATV SYSTEM .*>8 0 /mi InGaAs PIN PHOTO DIODE SMF MODULES NDL5408P and NDL5408P1 are InGaAs PIN photo diode modules with single mode fiber pigtail.
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b45752S
NDL5408P,
NDL5408P1
NDL5408P
NDL5408P1
NDL5408P
NDL5405C
NDL5405RA1
NDL5405RA2
LC2269
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BPW34 smd
Abstract: bpv10nf bpw43
Text: Tem ic S e m i c o n d u c t o r s Photo PIN Diodes Characteristics Package Photo Sensitive Area/tam2 I* !* Ira /fiA +A- @ k /u m W ns ® X = 820 om (Ee * l mW / cm2> R*. /12 (VR = Î0 V) Photo PIN Diodes in Clear Plastic Package e? BPW34 7.5 65° 50(>40)
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BPW34
BPW46
BPW43
BPV10
BPW82*
BPW83*
BPV10NF
BPV22NF
BPV23NF*
S153P
BPW34 smd
bpw43
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Photo Diodes
Abstract: "photo diodes"
Text: MITSUBISHI PHOTO DIODES PD7XX13 SERIES InGaAs PIN PHOTO DIODES Feature DESCRIPTION 0 B u it in GaAs Pre-amplifier with AGC function ^Single 5.0 supply voltage for Pre-amplifier ^D ifferential output ^ B a ll lens cap PD7XX8 Series are a 02O|xm InGaAs pin photodiodes
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PD7XX13
200MHz,
10MHz-1
488G/S
Photo Diodes
"photo diodes"
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future scope of wireless communication
Abstract: Remote Control Receiver IC temic opto
Text: Tem ic S e m i c o n d u c t o r s Optoelectronic Devices TEMIC Semiconductors presents you a broad range of high-performance optoelectronic products. The scope contains light-emitting diodes of all colors, photo detectors photo transistors, high-speed photo PIN diodes , opto isolators
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PD15-22C
Abstract: IS09001
Text: EV/ERLIGHT IS09001 QS9000 APPROVED Subminiature Clear State Photo Diode PD15-22C Features: • HIGH PHOTO SENSITIVITY. • FAST RESPONSE TIMES. • SMALL JUNCTION CAPACITANCE. Descriptions: PD15-22C is a high speed and highly sensitive PIN photo diode in a flat
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IS09001
QS9000
PD15-22C
PD15-22C
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Untitled
Abstract: No abstract text available
Text: Sensors I Infrared Light Emitting I Phototransistors. 130 I PIN Photo D io d e s . 130
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SIR-56SB
SIR-56SB
80F21S
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