Untitled
Abstract: No abstract text available
Text: BZT03-Series www.vishay.com Vishay Semiconductors Zener Diodes with Surge Current Specification FEATURES • Glass passivated junction • Hermetically sealed package • Clamping time in picoseconds • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC
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BZT03-Series
2002/95/EC
2002/96/EC
BZT03-series
BZT03-series-TR
BZT03-series-TAP
2011/65/EU
2002/95/EC.
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photodetector 850 nm
Abstract: G417603 Ultrafast Photodetectors GmbH G4176-03
Text: PRELIMINARY DATA ULTRAFAST MSM PHOTODETECTORS G4176 SERIES GaAs G7096 SERIES (InGaAs) Ultrafast response of several tens picosecond FEATURES Ultrafast response G4176-03 : tr , tf = 30 ps (Typ.) G7096-03 : tr = 40 ps (Typ.) Low dark current G4176 series : 100 pA (Ta=25 °C)
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G4176
G7096
G4176-03
G7096-03
G4176-03
G4176-01
G7096-01
photodetector 850 nm
G417603
Ultrafast Photodetectors GmbH
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C8898
Abstract: M8903 PLP10-044C PLP-10 PLP10-038 PLP10-041 PLP10-044 PLP10-063 PLP10-065 PLP10-067
Text: HIGH-REPETITION PICOSECOND LIGHT PULSER Model PLP-10 New High repetition up to 100 MHz from Hamamatsu Wavelength range from 375 to 1,550 nm The picosecond light pulser PLP-10 is an ultrashort pulsed light source that utilizes a laser diode LD head. It consists
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PLP-10
PLP-10
SE-171-41
SSCS1055E02
AUG/2003
C8898
M8903
PLP10-044C
PLP10-038
PLP10-041
PLP10-044
PLP10-063
PLP10-065
PLP10-067
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BZW03C
Abstract: BZW03C6V8
Text: BZW03C. Vishay Telefunken Silicon Z–Diodes and Transient Voltage Suppressors Features D Glass passivated junction D Hermetically sealed package D Clamping time in picoseconds Applications 94 9588 Voltage regulators and transient suppression circuits Order Instruction
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BZW03C.
BZW03C6V8
BZW03C6V8
100ms,
D-74025
12-Mar-01
BZW03C
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Untitled
Abstract: No abstract text available
Text: BZT03-Series www.vishay.com Vishay Semiconductors Zener Diodes with Surge Current Specification FEATURES • Glass passivated junction • Hermetically sealed package • Clamping time in picoseconds • Material categorization: For definitions of compliance please see
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BZT03-Series
BZT03C6V2
BZT03C6V2-TR
BZT03C6V2-TAP
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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BZW03C
Abstract: BZW03C10 BZW03C11 BZW03C12 BZW03C13 BZW03C6V8 BZW03C7V5 BZW03C8V2 BZW03C9V1 BZW03C43 vishay
Text: BZW03-Series Vishay Semiconductors Zener Diodes with Surge Current Specification Features • • • • Glass passivated junction Hermetically sealed package Clamping time in picoseconds Lead Pb -free component e2 949588 • Component in accordance to RoHS 2002/95/EC
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BZW03-Series
2002/95/EC
2002/96/EC
OD-64
08-Apr-05
BZW03C
BZW03C10
BZW03C11
BZW03C12
BZW03C13
BZW03C6V8
BZW03C7V5
BZW03C8V2
BZW03C9V1
BZW03C43 vishay
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BZT03D
Abstract: BZT03D6V2
Text: BZT03D. Vishay Semiconductors Silicon Z–Diodes and Transient Voltage Suppressors Features D Glass passivated junction D Hermetically sealed package D Clamping time in picoseconds Applications 94 9539 Medium power voltage regulators and medium power transient suppression circuits
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BZT03D.
BZT03D6V2
BZT03D6V2
100ms,
D-74025
12-Mar-01
BZT03D
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Untitled
Abstract: No abstract text available
Text: SIP Delay Lines US Patent 5,365,203 DL1L Series 1.0 Description These products offer performance up to 5 gigahertz. For many high frequency applications, these passive, discrete, tight tolerance ±50 picosecond delay lines can be used to help solve your TTL, CMOS, and ECL timing
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ISO9001
ISO14001
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Untitled
Abstract: No abstract text available
Text: ULTRAFAST MSM PHOTODETECTORS G4176 SERIES GaAs Ultrafast response of several tens picosecond FEATURES Ultrafast response *1 tr , tf = 30 ps (Typ.) Low dark current 100 pA (Ta=25 °C) Large photosensitive area 200 mm *1: Values excluding response time of light source, bias tee, assembly circuit,
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G4176
G4176-03
G4176-01
G4176-03
SE-164
LPRD1022E05
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BZT0312
Abstract: bzt03-12
Text: BZT03C-12 SILICON Z-DIODES AND TRANSIENT VOLTAGE SUPPRESSORS 0.034 0.9 0.028 (0.7) Features • Glass passivated junction • Hermetically sealed package Min 1.0 (25.4) 0.107 (2.7) 0.080 (2.0) • Clamping time in picoseconds 0.205 (5.2) 0.166 (4.1) Applications
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BZT03C-12
DO-41
BZT03-12
BZT0312
bzt03-12
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MA4E2812-54
Abstract: No abstract text available
Text: MADS-002811-00540T, MA4E2811, MA4E2812-54 Multi Purpose Axial Leaded Glass Schottky Diodes Features ♦ ♦ ♦ ♦ ♦ V2 Glass Package Style Glass Hermetically Sealed Packages Picosecond Switching Low Leakage Current Offered in Tape and Reel Packaging RoHS Compliant
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MADS-002811-00540T,
MA4E2811,
MA4E2812-54
MA4E2812-54
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Untitled
Abstract: No abstract text available
Text: BZW03-Series Vishay Semiconductors Zener Diodes with Surge Current Specification Features • Glass passivated junction • Hermetically sealed package • Clamping time in picoseconds • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC
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Original
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BZW03-Series
2002/95/EC
2002/96/EC
OD-64
18-Jul-08
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picosecond
Abstract: HSMS-2700 HSMS-2702 HSMS-270B
Text: High Performance Schottky Diode for Transient Suppression Technical Data HSMS-2700/-2702 -270B/-270C Features • Ultra-low Series Resistance for Higher Current Handling Package Lead Code Identification Top View • Picosecond Switching SINGLE 3 • Low Capacitance
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HSMS-2700/-2702
-270B/-270C
HSMS-2700
HSMS-270x
HSMS-2700-BLK
HSMS-2700-TR1
HSMS-2700-TR2
HSMS-2702-BLK
HSMS-2702-TR1
HSMS-2702-TR2
picosecond
HSMS-2702
HSMS-270B
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Untitled
Abstract: No abstract text available
Text: SIP Delay Lines US Patent 5,365,203 DL1L Series 1.0 Description These products offer performance up to 5 gigahertz. For many high frequency applications, these passive, discrete, tight tolerance ±50 picosecond delay lines can be used to help solve your TTL, CMOS, and ECL timing
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Original
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PDF
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ISO9001
ISO14001
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|
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA ULTRAFAST MSM PHOTODETECTORS G4176 SERIES GaAs G7096 SERIES (InGaAs) Ultrafast response of several tens picosecond FEATURES Ultrafast response G4176-03 : tr , tf = 30 ps (Typ.) G7096-03 : tr = 40 ps (Typ.) Low dark current G4176 series : 100 pA (Ta=25 °C)
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PDF
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G4176
G7096
G4176-03
G7096-03
G4176-01
G7096-01
G4176-03
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Untitled
Abstract: No abstract text available
Text: TeMIC BZW03C. S e m i c o n d u c t o r s Silicon Z-Diodes and Transient Voltage Suppressors Features • Glass passivated junction • Hermetically sealed package • Clamping time in picoseconds Applications Voltage regulators and transient suppression circuits
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BZW03C.
100ns,
12-Dec-94
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Untitled
Abstract: No abstract text available
Text: v tS H A Y _BZT03D— ▼ Vishay Telefunken Silicon Z-Diodes and Transient Voltage Suppressors Features • Glass passivated junction • Hermetically sealed package • Clamping time in picoseconds Applications 94 9539 Medium power voltage regulators and
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BZT03D--
D-74025
01-Apr-99
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macrocell ecl
Abstract: 4S514
Text: HONEYWELL DIGITAL PRODUCT bb dË J 4SS14S3 0000D43 *=1 T-42-11-13 JUNE 1985 ECL GATE ARRAY HE8000 PRO DUCT DESCRIPTION The HE8000 Gate Array Figure 1 is a 250 picosecond, 8000 equivalent gate density Very Large Scale Integra tion (VLSI) monolithic integrated circuit built using
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4SS14S3
0000D43
T-42-11-13
HE8000
HE8000
10K/KH
macrocell ecl
4S514
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U904
Abstract: U902
Text: - ;-:-ff HONEYWELL DIGITAL PRODUCT Lb D E 4SS14S3 OODOIOD b | • ’ LSTTL GATE ARRAY —-:-_ T-42-11-15 MARCH 1985 HT5000 PRODUCT DESCRIPTION The HT5000 G ate A rray (Figure 1 is a 600 picosecond, 5000 equivalent gate density Very Large
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4SS14S3
T-42-11-15
HT5000
HT50Q0
QDD0117
T-42-11-15
085--March
U904
U902
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8v2 850
Abstract: No abstract text available
Text: BZT03C. Vishay Telefunken Silicon Z-Diodes and Transient Voltage Suppressors Features • Glass passivated junction • Hermetically sealed package • Clamping time in picoseconds Applications 94 9539 Medium power voltage regulators and medium power transient suppression circuits
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BZT03C.
Res-5600
01-Apr-99
8v2 850
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Untitled
Abstract: No abstract text available
Text: B ZT03D Vishay Telefunken Silicon Z-Diodes and Transient Voltage Suppressors Features • Glass passivated junction • Hermetically sealed package • Clamping time in picoseconds Applications 94 9539 Medium power voltage regulators and medium power transient suppression circuits
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ZT03D
Resist-970-5600
01-Apr-99
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1N5713
Abstract: 1N5167 1n5165 MA4E2303
Text: Axial Lead Glass Packaged Schottky Diodes Features • PICOSECOND SWITCHING ■ JANTX/JANTXV SCREENING AVAILABLE ■ LOW FORWARD VOLTAGE DROP ■ LOW REVERSE LEAKAGE Applications This family of planar Schottky diodes is designed to have picosecond switching speed. These diodes are housed in
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MA4E2835
1N5713
1N5167
1n5165
MA4E2303
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1N5711 JANTXV
Abstract: 1N5711 JANTX MA4E2835 MA4E2812 MA4E-2303 1N5167
Text: an A M P com pany General Purpose Axial Lead Glass Packaged Schottky Diodes V 2.00 Features • • • • Case Style 54 Picosecond Switching JANTX/JANTXV Screening Available Low Forward Voltage Drop Low Reverse Leakage Description This family of Schottky diodes have “picosecond” switch
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MA4E2835
5L42205
1N5711 JANTXV
1N5711 JANTX
MA4E2812
MA4E-2303
1N5167
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LI 803-4
Abstract: No abstract text available
Text: High-Speed Standard Edge Connectors Catalog 65822 Revised 1 2 -9 4 Product Facts • 1:1 signal-to-ground ratio ■ Designed for signal transmissions with rise and fall times of 0.5 nanoseconds or greater ■ 40 signal/ground pairs per linear inch ■ Less than 10 picosecond
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