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    BZT0312

    Abstract: bzt03-12
    Text: BZT03C-12 SILICON Z-DIODES AND TRANSIENT VOLTAGE SUPPRESSORS 0.034 0.9 0.028 (0.7) Features • Glass passivated junction • Hermetically sealed package Min 1.0 (25.4) 0.107 (2.7) 0.080 (2.0) • Clamping time in picoseconds 0.205 (5.2) 0.166 (4.1) Applications


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    PDF BZT03C-12 DO-41 BZT03-12 BZT0312 bzt03-12