Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE 5SE D bbS3131 OOEQ^Sl T CNX38 OPTOCOUPLER Optically coupled isolator consisting o f an infrared emitting GaAs diode and a silicon npn phototransistor w ith accessible base. Plastic envelope. Suitable fo r TTL integrated circuits. Features
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OCR Scan
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bbS3131
CNX38
CNX38U
bbS3T31
T-41-83
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PDF
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CNX48 U
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE 5SE D bbS3T31 QDa01fl3 1 CNX48 T - V - g f OPTOCOUPLER Opto-isolator comprising an infrared emitting GaAs diode and a silicon npn Darlington phototransistor with accessible base. Plastic 6-lead dual-in line D IL envelope. Features
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OCR Scan
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bbS3T31
QDa01fl3
CNX48
CNX48U.
T-47-85
UNX48
T-41-85
CNX48 U
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PDF
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CNX48
Abstract: transistor 115 25e diode h5e CNX48U SOT-90B 4t85 CNX48 U
Text: I 1 N AUER PHILIPS/DISCRETE SSE D • bbS3T31 GOSOTÖB 1 ■ CNX48 OPTOCOUPLER Opto-isalator comprising an infrared emitting GaAs diode and a silicon npn Darlington phototransistor with accessible base. Plastic 6-lead dual-in line DI L envelope. Features
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OCR Scan
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bbS3T31
CNX48
CNX48U.
7Z88208
CNX48
transistor 115 25e
diode h5e
CNX48U
SOT-90B
4t85
CNX48 U
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PDF
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PHILIPS CNX38
Abstract: CBC 184 transistor CNX38 CNX38U 181 OPTOCOUPLER
Text: N AMER PHILIPS/DISCRETE 2SE D • fc.bS3tm Jl GG2GT51 T CNX38 OPTOCOUPLER O ptically coupled isolator consisting o f an infrared emitting G aAs diode and a silicon npn phototransistor w ith accessible base. Plastic envelope. Suitable fo r T T L integrated circuits.
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OCR Scan
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GG2GT51
CNX38
CNX38U
10/is;
T-41-83
5Z70428
PHILIPS CNX38
CBC 184 transistor
CNX38
CNX38U
181 OPTOCOUPLER
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PDF
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CNX71
Abstract: No abstract text available
Text: [ [ N AMER PHILIPS/DISCRETE 2SE D • kbS3*m QQSIOHS 0 ■ Jl CNX71 HIGH-VOLTAGE OPTOCOUPLER The CNX71 is an optocoupler consisting o f an infrared emitting GaAs diode and a silicon npn phototransistor in a dual-in-line OIL plastic envelope. The base is not connected.
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OCR Scan
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CNX71
E90700
0110b
AC/450
57/804/VDE
CNX71
GQ21Q34
T-41-83
7Z82663
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PDF
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Transistor 2TY
Abstract: 2ty transistor Transistor+2TY .2ty transistor npn .2ty transistor
Text: SL5504 ÛUALITY TECHNOLOGIES CORP 57E T> 7Mbbô51 □ÜDM?Db 1ÛT IÛTY OPTOCOUPLER Optically coupled isolator consisting of an infrared emitting GaAs diode and a high voltage silicon npn phototransistor with accessible base. Plastic envelope. Suitable for TTL integrated circuits.
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OCR Scan
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SL5504
OT212.
74bbflSl
0DD4fl03
SA048-2
Transistor 2TY
2ty transistor
Transistor+2TY
.2ty transistor npn
.2ty transistor
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PDF
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE aSE D • ^ 5 3 1 3 1 DOHIOO? _ JL_ CNX62 m r - - 8 5 HIGH-VOLTAGE OPTOCOUPLER The CNX62 is an optocoupler consisting o f an infrared emitting GaAs diode and a silicon npn phototransistor in a dual-in-line Dl L plastic envelope. The base is not connected.
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OCR Scan
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CNX62
CNX62
E90700
0110b
T-41-83
bb53T31
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PDF
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CNX62
Abstract: BS415 DDS1015
Text: N AMER PHILIPS/DISCRETE 2SE D • b b S S ^ l GOHIQÜ? .1 ■ CNX62 T - H l - S Z HIGH-VOLTAGE OPTOCOUPLER The CNX62 is an optocoupler consisting of an infrared emitting GaAs diode and a silicon npn phototransistor in a dual-in-line DIL plastic envelope. The base is not connected.
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OCR Scan
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CNX62
CNX62
E90700
0110b
804/VER
hbS3T31
T-41-83
BS415
DDS1015
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PDF
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Untitled
Abstract: No abstract text available
Text: SL5500 SL5501 SL5511 , ÛUALITY TECHNOLOGIES CORP 57E D • 74bbô51 0GD4bûT 270 «fiTY OPTOCOUPLERS Optically coupled isolators consisting of an infrared emitting GaAs diode and a silicon npn phototransistor with accessible base. Plastic envelopes. Suitable for T T L integrated circuits.
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OCR Scan
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SL5500
SL5501
SL5511
OT212.
MSA048-2
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PDF
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Untitled
Abstract: No abstract text available
Text: 4N29 4N30 4N31 ÛUALITY TECHNOLOGIES CORP S7E ]> 4N32 4N33 T m4 • Ö TY s a OPTOCOUPLER Opto-isolator comprising an infrared emitting GaAs diode and a silicon npn Darlington phototransistor with accessible base. Plastic 6-lead dual-in-line DIL envelope.
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OCR Scan
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E90700
0110B
AC/450
57804/VDE
86/HD
195S4
74bbfl51
OT212.
74bbflSl
0DD4fl03
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PDF
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CNX62
Abstract: BS415 sot174
Text: N AMER PHILIPS/DISCRETE 25E D • bbSB TBl GOHIQÜ? .1 ■ Jl CNX62 r - 4 | - 8 5 H IG H -VO LTAGE OPTOCOUPLER The CNX62 is an optocoupler consisting of an infrared emitting GaAs diode and a silicon npn phototransistor irr a dual-in-line Dl L plastic envelope. The base is not connected.
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OCR Scan
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CNX62
CNX62
E90700
0110b
804/VDE
bb53T31
T-41-83
BS415
sot174
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PDF
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CNX62
Abstract: BS415
Text: N AMER PHILIPS/DISCRETE 2SE D • ^53*131 GOHIOO? .1 ■ CNX62 r - 4 1 - g s HIGH-VO LTAGE O PTO CO U PLER T h e C N X 6 2 is an optocoupler consisting of an infrared emitting G aA s diode and a silicon npn phototransistor in a dual-in-line D IL plastic envelope. T h e base is not connected.
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OCR Scan
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CNX62
CNX62
bbS3T31
T-41-83
BS415
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PDF
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Untitled
Abstract: No abstract text available
Text: [[ N AMER PHILIPS/DISCRETE 25E D bb53T31 0021025 0 • CNX71 T - 4 - I - ^ 3 H IG H -V O L T A G E O P T O C O U P L E R The CNX71 is an optocoupler consisting of an infrared emitting GaAs diode and a silicon npn phototransistor in a dual-in-line DIL plastic envelope. The base is not connected.
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OCR Scan
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bb53T31
CNX71
CNX71
E90700
AC/450
DQ31Q3M
T-41-83
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PDF
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Transistor 2TY
Abstract: .2ty transistor npn
Text: CNX48U Û U A L IT Y T E C H N O L O G I E S CORP 7Mhbfi51 OQO M Sb ? 72T • Û T Y S7E D OPTOCOUPLER % Opto-isolator comprising an infrared emitting GaAs diode and a silicon npn Darlington phototransistor with accessible base. Plastic 6-lead dual-in line DIL envelope.
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OCR Scan
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CNX48U
7Mhbfi51
E90700
0110b
804/VDE
86/HD
74bbfl51
OT212.
74bbflSl
0DD4fl03
Transistor 2TY
.2ty transistor npn
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PDF
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CBC 184 transistor
Abstract: CNX35U Transistor 2TY CBC 184 c transistor
Text: CNX35U CNX36U PM VO O I I Û U A L IT Y T E C H N O L O G I E S CORP S7E D 7 4 b b 6 5 1 G G G 4 53 4 EfiS • ■ 3T Y — % OPTOCOUPLERS Optically coupled isolators consisting o f an infrared emitting GaAs diode and a silicon npn phototransistor w ith accessible base. Plastic envelopes. Suitable fo r TTL integrated circuits.
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OCR Scan
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CNX35U
CNX36U
E90700
0110b
74bbfl51
OT212.
74bbflSl
0DD4fl03
CBC 184 transistor
CNX35U
Transistor 2TY
CBC 184 c transistor
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PDF
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Transistor 3TY
Abstract: No abstract text available
Text: I I ÛU AL ITY T E C H N O L O G I E S CORP S7E D • 7 4 b b ô 5 1 0 G G4 41 7 212 « f l T Y U N u a t» CNG36 GaAIAs OPTOCOUPLERS O ptically coupled isolators consisting o f an infrared emitting GaAIAs diode and a silicon npn phototransistor w ith accessible base in a SOT90B envelope, designed fo r low input current and long life
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OCR Scan
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CNG36
OT90B
OT212.
74bbflSl
0DD4fl03
MSA048-2
Transistor 3TY
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PDF
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CNY17G-3
Abstract: CNY17G3
Text: Philips Semiconductors Product specification High-voltage optocouplers CNY17G/CNY17GF QUALITY TECHNOLOGIES CORP TMbböSl OOOMbEE M m S7E D IflTY FEATURES • High current transfer ratio and a low saturation voltage, making the devices suitable for use with
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OCR Scan
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CNY17G/CNY17GF
E90700
BS415
BS7002
OT212.
74bbflSl
0DD4fl03
MSA048-2
CNY17G-3
CNY17G3
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PDF
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diode Optocouplers
Abstract: 104 m1e tw23 phototransistor philips NY17G CNY17GF
Text: 711002b GQ3Q5E4 S « P H I N MIE D PHILIPS INTERNATIONAL r-y/-83 Philips Semiconductors Product specification High-voltage optocouplers CNY17G/CNY17GF FEATURES • High current transfer ratio and a low saturation voltage, making the devices suitable for use with
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OCR Scan
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711002b
CNY17G/CNY17GF
CNY17G
CNY17GF
OT231
CNY17GF.
-CNY17G
diode Optocouplers
104 m1e
tw23
phototransistor philips
NY17G
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PDF
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Untitled
Abstract: No abstract text available
Text: Philips Sem iconductors Product specification 7 H V D U A L I T Y T E C H N O L O G I E S C0 RP S7E D 74fc>bfl51 000472*1 7fi7 • 3 T Y FEATURES • A pin distance of 10.16 mm • An external clearance of 9.6 mm mimimum and an external creepage distance of 8 mm
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OCR Scan
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bfl51
OT212.
74bbflSl
0DD4fl03
MSA048-2
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PDF
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CNX71
Abstract: CNX71A CNX72A SOT229 phototransistor philips
Text: 711062b P H ILIP S INTERNATIONAL 41E 0030S0Ô 7 • P H IN D T - v / '« 5 _ Product specification Philips Semiconductors CNX71A/CNX72A High-voltage optocouplers FEATURES • High current transfer ratio and a low saturation voltage, making
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OCR Scan
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711062b
0030S0Ã
CNX71A/CNX72A
CNX71
CNX72Aare
OT229B
CNX72A,
CNX71A.
PINNING-CNX71A
E90700
CNX71A
CNX72A
SOT229
phototransistor philips
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PDF
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453 optocoupler
Abstract: No abstract text available
Text: Product specification Philips Semiconductors CNX71A/CNX72A High-voltage optocouplers 3UALITY T E C H N O L O G I E S CORP 57E D 7Mbbfl51 O O Q M S q Q OGI • ( 3 T Y FEATURES • High current transfer ratio and a low saturation voltage, making the devices suitable for use with
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OCR Scan
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CNX71Aand
CNX72Aare
OT229B
CNX72A,
CNX71A.
-CNX71A
CNX71A/CNX72A
OT212.
74bbflSl
0DD4fl03
453 optocoupler
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PDF
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phototransistor philips
Abstract: 004583 BS415 BS7002 SL5582 SL5583 diode ja diode Optocouplers MBB038
Text: PHILIPS INTERNATIONAL 41E ]> 711GÖ2b 003D54Ö û • PHIN T - V / - « Philips Sem iconductors 3 Product specification High-voltage optocouplers SL5582/SL5583 FEATURES • A pin distance of 10.16 mm • An external clearance of 9.6 mm mimimum and an external
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OCR Scan
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711002b
003D54Ã
SL5582/SL5583
SL5582
SL5583
phototransistor philips
004583
BS415
BS7002
diode ja
diode Optocouplers
MBB038
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PDF
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234 optocoupler
Abstract: SOT230
Text: Product specification Philips Sem iconductors High-voltage optocoupier CNX62A FEATURES • High current transfer ratio and a low saturation voltage, making the devices suitable for use with TTL integrated circuits • High degree of AC and DC Insulation 3750 V (RMS and
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OCR Scan
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CNX62A
CNX62A
OT230
OT230
BS415
BS7002
234 optocoupler
SOT230
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PDF
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Untitled
Abstract: No abstract text available
Text: I DEVELOPMENT DATA This data iheat contains advance information and specifications are subject to change without notice. • b b S a ^ l 1303067^ b ■ | CNS35 N AMER PHILIPS/DISCRETE SSE D f - 41 -^ 2 DUAL OPTOCOUPLER The CNS35 is a D U A L optocoupler in a SO T 97F dual-in-line (D1L 8 pin plastic envelope. Itconsistsof
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OCR Scan
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CNS35
CNS35
T-41-83
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PDF
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