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    PHILIPS TRANSISTOR EQUIVALENT LIST Search Results

    PHILIPS TRANSISTOR EQUIVALENT LIST Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMP89FS60AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP64-P-1010-0.50E Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP52-P-1010-0.65 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS60BFG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1414-0.80-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP52-1010-0.65-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS62AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP44-P-1010-0.80A Visit Toshiba Electronic Devices & Storage Corporation

    PHILIPS TRANSISTOR EQUIVALENT LIST Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    epsilam 10

    Abstract: BY239 BDT91 LLE18150X SC15 erie 1250-003 diode BY239
    Text: DISCRETE SEMICONDUCTORS DATA SHEET LLE18150X NPN silicon planar epitaxial microwave power transistor Product specification File under Discrete Semiconductors, SC15 Philips Semiconductors September 1994 Philips Semiconductors Product specification NPN silicon planar epitaxial


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    LLE18150X epsilam 10 BY239 BDT91 LLE18150X SC15 erie 1250-003 diode BY239 PDF

    epsilam 10

    Abstract: BY239 MLC431 BDT91 LFE18500X SC15 erie 1250-003 diode BY239 iw16
    Text: DISCRETE SEMICONDUCTORS DATA SHEET LFE18500X NPN silicon planar epitaxial microwave power transistor Product specification File under Discrete Semiconductors, SC15 Philips Semiconductors December 1994 Philips Semiconductors Product specification NPN silicon planar epitaxial


    Original
    LFE18500X epsilam 10 BY239 MLC431 BDT91 LFE18500X SC15 erie 1250-003 diode BY239 iw16 PDF

    epsilam 10

    Abstract: BDT91 BY239 LFE15600X
    Text: DISCRETE SEMICONDUCTORS DATA SHEET LFE15600X NPN microwave power transistor Product specification Supersedes data of January 1994 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors


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    LFE15600X SCA53 127147/00/02/pp12 epsilam 10 BDT91 BY239 LFE15600X PDF

    LX1214E500X

    Abstract: BD239 BY239 SC15
    Text: DISCRETE SEMICONDUCTORS DATA SHEET LX1214E500X NPN microwave power transistor Preliminary specification Supersedes data of December 1994 File under Discrete Semiconductors, SC15 1997 Feb 18 Philips Semiconductors Preliminary specification NPN microwave power transistor


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    LX1214E500X SCA53 127147/00/02/pp12 LX1214E500X BD239 BY239 SC15 PDF

    free transistor and ic equivalent data

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PBSS5240V 40 V low VCEsat PNP transistor Product specification 2003 Jan 30 Philips Semiconductors Product specification 40 V low VCEsat PNP transistor PBSS5240V FEATURES QUICK REFERENCE DATA • Low collector-emitter saturation voltage VCEsat


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    M3D744 PBSS5240V 01-May-99) free transistor and ic equivalent data PDF

    IC 74115

    Abstract: free transistor and ic equivalent data MARKING CODE 42 free transistor
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PBSS4240V 40 V low VCEsat NPN transistor Product specification 2003 Jan 30 Philips Semiconductors Product specification 40 V low VCEsat NPN transistor PBSS4240V FEATURES QUICK REFERENCE DATA • Low collector-emitter saturation voltage VCEsat


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    M3D744 PBSS4240V 01-May-99) IC 74115 free transistor and ic equivalent data MARKING CODE 42 free transistor PDF

    pb4350

    Abstract: free transistor and ic equivalent data free transistor pb435 free download transistor and ic equivalent data PBSS5350 TRANSISTOR SMD MARKING CODE R 73 free download transistor data sheet
    Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D087 PBSS4350Z 50 V low VCEsat NPN transistor Product specification Supersedes data of 2001 Jul 13 2003 Jan 20 Philips Semiconductors Product specification 50 V low VCEsat NPN transistor PBSS4350Z FEATURES


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    M3D087 PBSS4350Z 01-May-99) pb4350 free transistor and ic equivalent data free transistor pb435 free download transistor and ic equivalent data PBSS5350 TRANSISTOR SMD MARKING CODE R 73 free download transistor data sheet PDF

    pb5350

    Abstract: free transistor and ic equivalent data smd transistors code PBSS5350Z free transistor free download transistor and ic equivalent data
    Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D087 PBSS5350Z 50 V low VCEsat PNP transistor Product specification Supersedes data of 2001 Nov 13 2003 Jan 20 Philips Semiconductors Product specification 50 V low VCEsat PNP transistor PBSS5350Z FEATURES


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    M3D087 PBSS5350Z 01-May-99) pb5350 free transistor and ic equivalent data smd transistors code free transistor free download transistor and ic equivalent data PDF

    philips ferrite 4330-030

    Abstract: philips ferrite 4b1 TRansistor 648 BY239 BDT91 LLE18010X j160 capacitor philips
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D159 LLE18010X NPN microwave power transistor Product specification Supersedes data of December 1994 1999 Apr 22 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors


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    M3D159 LLE18010X SCA63 125002/00/02/pp12 philips ferrite 4330-030 philips ferrite 4b1 TRansistor 648 BY239 BDT91 LLE18010X j160 capacitor philips PDF

    LLE16350X

    Abstract: BDT91 BY239
    Text: DISCRETE SEMICONDUCTORS DATA SHEET LLE16350X NPN microwave power transistor Product specification Supersedes data of September 1994 1997 Feb 03 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors


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    LLE16350X SCA53 127121/00/04/pp12 LLE16350X BDT91 BY239 PDF

    cb pj 47 diode

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE b^E J> bbS3T31 DD3227fl 070 H A P X Product specification Philips Semiconductors NPN silicon planar epitaxial microwave power transistor _ LFE15600X FEATURES QUICK REFERENCE DATA • Diffused emitter ballasting resistors


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    bbS3T31 DD3227fl LFE15600X cb pj 47 diode PDF

    B0239

    Abstract: Transistor AND DIODE Equivalent list Transistor Equivalent list LC437 AB-162 transistor
    Text: Philips Semiconductors Preliminary specification NPN microwave power transistor LX1214E500X FEATURES QUICK REFERENCE DATA • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR Microwave performance up to Tmb - 25 °C in a common emitter class AB.


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    LX1214E500X 100A1201kp B0239 Transistor AND DIODE Equivalent list Transistor Equivalent list LC437 AB-162 transistor PDF

    philips ferrite material specifications 12nc

    Abstract: Class E amplifier BDT91 BY239 LLE18150X Tekelec diode
    Text: Philips Semiconductors Product specification NPN silicon planar epitaxial microwave power transistor FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigltated structure provides high emitter efficiency


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    LLE18150X 7110fi5b philips ferrite material specifications 12nc Class E amplifier BDT91 BY239 LLE18150X Tekelec diode PDF

    12NC philips diode 93

    Abstract: transistor j7 Transistor Equivalent list 12NC philips chip resistor BDT91 BY239 LLE15180X SC15 POTENTIOMETER AB 10 K
    Text: Philips Semiconductors Product specification NPN microwave power transistor FEA TU R ES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high V S W R • Interdigitated structure provides high emitter efficiency


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    LLE15180X OT437A. 12NC philips diode 93 transistor j7 Transistor Equivalent list 12NC philips chip resistor BDT91 BY239 LLE15180X SC15 POTENTIOMETER AB 10 K PDF

    diode BY239

    Abstract: bd239 equivalent Transistor Equivalent list MLC446 copper permittivity 43081 BD239 BY239 LXE15450X SC15
    Text: Philips Semiconductors Product specification NPN microwave power transistor LXE15450X FEATURES QUICK REFERENCE DATA • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VS W R amplifier. • Interdigitated common-emitter


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    LXE15450X MLC446 OT439A. diode BY239 bd239 equivalent Transistor Equivalent list MLC446 copper permittivity 43081 BD239 BY239 LXE15450X SC15 PDF

    j78 transistor equivalent

    Abstract: Transistor Equivalent list j160 capacitor philips transistor BD239 equivalent bd239 equivalent J6 transistor BD239 BY239 LLE16045X SC15
    Text: Philips Semiconductors Product specification NPN microwave power transistor LLE16045X FEATURES QUICK REFERENCE DATA • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR amplifier. • Interdigitated structure provides


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    LLE16045X OT437A. j78 transistor equivalent Transistor Equivalent list j160 capacitor philips transistor BD239 equivalent bd239 equivalent J6 transistor BD239 BY239 LLE16045X SC15 PDF

    diode BY239

    Abstract: Transistor Equivalent list BY239 Transistor AND DIODE Equivalent list philips ferrite 4b1 erie 1250-003 copper permittivity BDT91 LLE15370X SC15
    Text: Philips Semiconductors Product specification NPN microwave power transistor FEA TU R ES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high V S W R • Interdigitated structure provides high emitter efficiency


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    LLE15370X OT437A. diode BY239 Transistor Equivalent list BY239 Transistor AND DIODE Equivalent list philips ferrite 4b1 erie 1250-003 copper permittivity BDT91 LLE15370X SC15 PDF

    erie 1500 z

    Abstract: BDT91 BY239 LFE15600X SC15 by239 1500
    Text: Philips Semiconductors Product specification NPN microwave power transistor LFE15600X FEATURES QUICK REFERENCE DATA • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR amplifier. • Interdigitated structure provides


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    LFE15600X erie 1500 z BDT91 BY239 LFE15600X SC15 by239 1500 PDF

    by239

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification NPN microwave power transistor LLE16350X FEATURES QUICK REFERENCE DATA • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR Microwave performance up to Tmb = 25 °C in a common emitter class AB


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    LLE16350X by239 PDF

    Transistor AND DIODE Equivalent list

    Abstract: 100A101kp
    Text: Philips Semiconductors Product specification LLE15370X NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated structure provides high emitter efficiency


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    LLE15370X MBD764 Transistor AND DIODE Equivalent list 100A101kp PDF

    diode BY239

    Abstract: bd239 equivalent BD750 Transistor Equivalent list BD 750 PERMITTIVITY* 2.55
    Text: Philips Sem iconductors Product specification NPN m icrow ave power transistor FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated structure provides high emitter efficiency


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    LLE16045X diode BY239 bd239 equivalent BD750 Transistor Equivalent list BD 750 PERMITTIVITY* 2.55 PDF

    Untitled

    Abstract: No abstract text available
    Text: * f *< UK DISCRETE SEMICONDUCTORS LLE18300X NPN silicon planar epitaxial microwave power transistor Preliminary specification File under Discrete Semiconductors, SC 15 October 1992 Philips Semiconductors PHILIPS QD33025 Preliminary specification Philips Sem iconductors


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    LLE18300X QD33025 FO-229 bb53T31 DD33033 PDF

    10C1

    Abstract: 330E BDT91 BY239 IEC134 LLE18300X VC60 copper permittivity d 331 TRANSISTOR equivalent 229 transistor npn
    Text: • f *< UK DISCRETE SEMICONDUCTORS M m S^ EETT LLE18300X NPN silicon planar epitaxial microwave power transistor Preliminary specification File under Discrete Semiconductors, SC 15 October 1992 Philips Semiconductors PHILIPS Preliminary «pacification Philip» Semiconductora


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    LLE18300X DD3f033 10C1 330E BDT91 BY239 IEC134 LLE18300X VC60 copper permittivity d 331 TRANSISTOR equivalent 229 transistor npn PDF

    m 32 ab transistor

    Abstract: mlc444 bd239 equivalent
    Text: Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated common-emitter structure provides high emitter


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    LXE15450X m 32 ab transistor mlc444 bd239 equivalent PDF