OF4455
Abstract: OT239 philips AS2000P triac ot239 phx4nq60e of4453 TDA8855H OF4455 diode OF4453 diode AS2000P
Text: Philips Semiconductors Product Discontinuation Notice DN53 Exhibit A June 30, 2004 SEE DN53 NOTICE LETTER FOR APPLICABLE LAST TIME BUY TERMS, CONDITIONS AND CODE DEFINITIONS FOR THESE DISCONTINUED PRODUCTS. REFER TO PHILIPS WEB-SITE "http://www.semiconductors.philips.com/eol FOR ADDED INFORMATION.
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Code357A3
30-Jun-04
VY27357A3
OF4455
OT239
philips AS2000P
triac ot239
phx4nq60e
of4453
TDA8855H
OF4455 diode
OF4453 diode
AS2000P
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Zener Diode 3v 400mW
Abstract: transistor bc548b BC107 transistor TRANSISTOR bc108 bc547 cross reference chart Transistor BC109 DIAC OB3 DIAC Br100 74HCT IC family spec TRANSISTOR mosfet BF998
Text: INDEX Order Code Description Page Number – Philips Semiconductors 1 485-068 DS750 Development Kit 1 527-749 87C750 Hardware Kit 1 – Philips Semiconductors Data Communications UART Product Line 2 790-590 80C51 In a Box 3 – 80C51 Family Features 3 –
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DS750
87C750
80C51
PZ3032-12A44
BUK101-50GS
BUW12AF
BU2520AF
16kHz
BY328
Zener Diode 3v 400mW
transistor bc548b
BC107 transistor
TRANSISTOR bc108
bc547 cross reference chart
Transistor BC109
DIAC OB3
DIAC Br100
74HCT IC family spec
TRANSISTOR mosfet BF998
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BU2527AF
Abstract: BU2527 Philips BU2527AF
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2527AF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for
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BU2527AF
BU2527AF
BU2527
Philips BU2527AF
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BU2527AF
Abstract: Philips BU2527AF BU2527 BU2525AF BU2527A BY228
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2527AF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for
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BU2527AF
BU2527AF
Philips BU2527AF
BU2527
BU2525AF
BU2527A
BY228
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STF12A80
Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
Text: Cross Reference For the most up to date cross reference, go to the product portal: Manufacturer type number Manufacturer Philips type number Page number Manufacturer type number Manufacturer
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02CZ10
02CZ11
02CZ12
02CZ13
02CZ15
02CZ16
02CZ18
02CZ2
02CZ20
STF12A80
BSTC1026
BSTD1046
BTB04-600SAP
STF6A80
BSTD1040
TO510DH
BSTC1040
TO812NJ
BTB15-700B
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BU2725DX
Abstract: BU2525AF BU2527AFX transistor bu2725dx
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2725DX GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Designed to withstand VCES pulses up to 1700V.
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BU2725DX
OT399
BU2725DX
BU2525AF
BU2527AFX
transistor bu2725dx
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BU2527DX
Abstract: BU2527AF BU2525DF bu2527af data
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2527DX GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved
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BU2527DX
OT399
BU2527DX
BU2527AF
BU2525DF
bu2527af data
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BU2525AF
Abstract: BU2725AX
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2725AX GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Designed to withstand VCES pulses up to 1700V.
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BU2725AX
OT399
BU2525AF
BU2725AX
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bu2727d
Abstract: BU2725DF BU2527 BU2727 BU2525AF Philips Capacitor
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2725DF GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Designed to withstand VCES pulses up to 1700V.
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BU2725DF
OT199
bu2727d
BU2725DF
BU2527
BU2727
BU2525AF
Philips Capacitor
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BU2525A
Abstract: BU2527A BU2527AF BY228
Text: Philips Semiconductors Preliminary specification Silicon Diffused Power Transistor BU2527A GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for
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BU2527A
BU2525A
BU2527A
BU2527AF
BY228
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equivalent BU2725DX
Abstract: BU2725DX transistor bu2725dx BU2525AF bu2727d
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2725DX GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Designed to withstand VCES pulses up to 1700V.
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BU2725DX
OT399
equivalent BU2725DX
BU2725DX
transistor bu2725dx
BU2525AF
bu2727d
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Philips BU2527AF
Abstract: BU2527DF BU2527AF TRANSISTOR BU2525DF IBM REV 2.8 BU2525AF BU2525DF
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2527DF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved
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BU2527DF
OT19n
Philips BU2527AF
BU2527DF
BU2527AF
TRANSISTOR BU2525DF
IBM REV 2.8
BU2525AF
BU2525DF
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BU2527AW
Abstract: BU2527 BU2525A BU2527A BU2527AF
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2527AW GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for
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BU2527AW
OT42n
BU2527AW
BU2527
BU2525A
BU2527A
BU2527AF
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BU2527
Abstract: bu2527afx BU2525AF BU2725AF TRansistor 1300 free
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2725AF GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Designed to withstand VCES pulses up to 1700V.
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BU2725AF
OT199
BU2527
bu2527afx
BU2525AF
BU2725AF
TRansistor 1300 free
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BU2527AX
Abstract: BU2527 BU2527AF equivalent bu2527ax BU2525AF BU2527A BY228 bu2527af data
Text: Philips Semiconductors Preliminary specification Silicon Diffused Power Transistor BU2527AX GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for
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BU2527AX
BU2527AX
BU2527
BU2527AF
equivalent bu2527ax
BU2525AF
BU2527A
BY228
bu2527af data
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BUT11APX equivalent
Abstract: BU4508DX equivalent 2SD1876 2Sd1651 equivalent BYS21-45 smd zener diode color band 2SD1878 data sheet 2SC5296 equivalent BT151-600R BUK98150 spice
Text: Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210
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BT148-600R
BT148-400R
BUT11APX equivalent
BU4508DX equivalent
2SD1876
2Sd1651 equivalent
BYS21-45
smd zener diode color band
2SD1878 data sheet
2SC5296 equivalent
BT151-600R
BUK98150 spice
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Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE bbSBPBl DDBabSb bfiB bTE D Philips Semiconductors Product specification Silicon diffused power transistor BU2527AF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended
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BU2527AF
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TRANSISTOR K 314
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2527AF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for
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BU2527AF
100Pq
/PD25V
TRANSISTOR K 314
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BU2527AF
Abstract: BU2527
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2527AF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for
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BU2527AF
V2527AF
100-P:
BU2527AF
BU2527
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BU2527AF
Abstract: bu2527 ScansUX30
Text: Philips Semiconductors Product specification Silicon diffused power transistor BU2527AF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for
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BU2527AF
0D77bbfl
OT199;
711002b
QQ77hhH
bu2527
ScansUX30
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BU2508-AX
Abstract: BU506D, BU1506DX, BU2506DF BU2506DF BU4508AF BU4506DF BU4508DF BU4508DX BU2725DX BU2506DX BU4525AX
Text: Philips Semiconductors Power Bipolar Transistors Index Types added to the range since the last issue of Handbook SC06 are shown in bold print. TYPE NUMBER PAGE TYPE NUMBER PAGE TYPE NUMBER PAGE BU505 42 BU2520AF 206 BU2722AF 391 BU505D 42 BU2520AW 212 BU2722AX
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BU505
BU505D
BU505F
BU505DF
BU506
BU506D
BU506F
BU506DF
BU508AF
BU508AW
BU2508-AX
BU506D, BU1506DX, BU2506DF
BU2506DF
BU4508AF
BU4506DF
BU4508DF
BU4508DX
BU2725DX
BU2506DX
BU4525AX
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BU25150X
Abstract: BU2508-AX BU2708AX BUS08D BUT12AF BU2708DX BU2725DX BU2720DX BU1508AX BU1508DX
Text: Philips Semiconductors High-voltage and Switching NPN Power Transistors Types added to the range since the last issue of Handbook SC06 1996 issue are shown in bold print. TYPE NUMBER PAGE TYPE NUMBER PAGE TYPE NUMBER PAGE BU505 38 BU2520AW 203 BU2722AX 387
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BU505
BU505D
BU505DF
BU505F
BU506
BU506D
BU506DF
BU506F
BU508AF
BU508AW
BU25150X
BU2508-AX
BU2708AX
BUS08D
BUT12AF
BU2708DX
BU2725DX
BU2720DX
BU1508AX
BU1508DX
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BU1508DX
Abstract: BU1508AX BU2708AF bu2525af BU2508-AX BU2720DF BU2520DX
Text: Philips Semiconductors Concise Catalogue 1996 High-voltage and switching NPN power transistors POWER SEMICONDUCTORS HIGH-VOLTAGE AND SWITCHING NPN POWER TRANSISTORS continued type number package 35 35 45 45 45 45 125 125 45 45 45 45 45 45 125 125 45 45 45
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BU1508AX
BU1508DX
BU2508AF
BU2508AX
BU2508DF
BU2508DX
BU2508A
BU2508D
BU2708AF
bu2525af
BU2508-AX
BU2720DF
BU2520DX
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SOT399
Abstract: BU2720DX BU2708AX BU2708DX BU2720AX BU1507AX BU2725DX BU2515DX BU2532
Text: Philips Semiconductors High-voltage and Switching NPN Power Transistors Selection guide This selection guide lists the devices in the book, grouped in accordance with the collector-emitter voltage VCesm parameter and in order of the collector current (lc) parameter and power dissipation (Ptot). Types added to the range
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BUX86P
BUX84F
BUX84
BUW84
BUT211X
BUT11F
BUW11F
BUT211
BUT11
BUW11W
SOT399
BU2720DX
BU2708AX
BU2708DX
BU2720AX
BU1507AX
BU2725DX
BU2515DX
BU2532
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