BU2527AX
Abstract: Equivalent bu2527ax datasheet equivalent bu2527ax
Text: SavantIC Semiconductor Product Specification BU2527AX Silicon NPN Power Transistors DESCRIPTION •With TO-3PML package ·High voltage ·High speed switching APPLICATIONS ·For use in horizontal deflection circuits of high resolution monitors PINNING PIN DESCRIPTION
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BU2527AX
BU2527AX
Equivalent bu2527ax datasheet
equivalent bu2527ax
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BU2527AX
Abstract: BU2527AF BU2527AX equivalent equivalent bu2527ax
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2527AX GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for
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BU2527AX
BU2527AX
BU2527AF
BU2527AX equivalent
equivalent bu2527ax
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BU2525A
Abstract: BU2527A BU2527AF BY228
Text: Philips Semiconductors Preliminary specification Silicon Diffused Power Transistor BU2527A GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for
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BU2527A
BU2525A
BU2527A
BU2527AF
BY228
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BU2527A
Abstract: No abstract text available
Text: SavantIC Semiconductor Product Specification BU2527A Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·High voltage ·High speed switching APPLICATIONS ·For use in horizontal deflection circuits of high resolution monitors. PINNING PIN DESCRIPTION
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BU2527A
BU2527A
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BU2527AF
Abstract: No abstract text available
Text: SavantIC Semiconductor Product Specification BU2527AF Silicon NPN Power Transistors DESCRIPTION •With TO-3PFa package ·High voltage ·High speed switching APPLICATIONS ·For use in horizontal deflection circuits of high resolution monitors PINNING PIN DESCRIPTION
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BU2527AF
BU2527AF
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bu2527ax
Abstract: ISC transistor bu2527ax equivalent bu2527ax BB145 Equivalent bu2527ax datasheet
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU2527AX DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 800V (Min) ·High Switching Speed APPLICATIONS ·Designed for use in horizontal deflection circuits of high
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BU2527AX
bu2527ax
ISC transistor bu2527ax
equivalent bu2527ax
BB145
Equivalent bu2527ax datasheet
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BU2527AF
Abstract: No abstract text available
Text: Product Specification www.jmnic.com BU2527AF Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-3PFa package ・High voltage ・High speed switching APPLICATIONS ・For use in horizontal deflection circuits of high resolution monitors PINNING PIN DESCRIPTION
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BU2527AF
100mA
BU2527AF
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BU2527AX
Abstract: BU2527 BU2527AF equivalent bu2527ax BU2525AF BU2527A BY228 bu2527af data
Text: Philips Semiconductors Preliminary specification Silicon Diffused Power Transistor BU2527AX GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for
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BU2527AX
BU2527AX
BU2527
BU2527AF
equivalent bu2527ax
BU2525AF
BU2527A
BY228
bu2527af data
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bu2527ax
Abstract: equivalent bu2527ax
Text: Product Specification www.jmnic.com BU2527AX Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-3PML package ・High voltage ・High speed switching APPLICATIONS ・For use in horizontal deflection circuits of high resolution monitors PINNING PIN DESCRIPTION
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BU2527AX
bu2527ax
equivalent bu2527ax
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bu2527ax
Abstract: BU2527aX-lf Equivalent bu2527ax datasheet pdf of bu2527ax crt tube BU2527
Text: BU2527AX Silicon Diffused Power Transistor PRODUCT PROFILE General Description High-voltage, high-speed NPN power switching in a isolated plastic package. Features Isolated package Fast switching Applications High frequency Cathode Ray Tube CRT monitors
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BU2527AX
12CEO
BU2527AX-LF
bu2527ax
BU2527aX-lf
Equivalent bu2527ax datasheet
pdf of bu2527ax
crt tube
BU2527
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BU2527AF
Abstract: BU2527 Philips BU2527AF
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2527AF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for
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BU2527AF
BU2527AF
BU2527
Philips BU2527AF
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BU2527AW
Abstract: BU2527 BU2525A BU2527A BU2527AF
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2527AW GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for
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BU2527AW
OT42n
BU2527AW
BU2527
BU2525A
BU2527A
BU2527AF
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BU2527AX
Abstract: BU2527 equivalent bu2527ax
Text: BU2527AX Silicon diffused power transistor Rev. 02 — 12 December 2005 Product data sheet 1. Product profile 1.1 General description High-voltage, high-speed NPN power switching transistor in a SOT399 isolated plastic package. 1.2 Features • Isolated package
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BU2527AX
OT399
sym056
OT399
BU2527AX
BU2527
equivalent bu2527ax
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BU2527AF
Abstract: Philips BU2527AF BU2527 BU2525AF BU2527A BY228
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2527AF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for
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BU2527AF
BU2527AF
Philips BU2527AF
BU2527
BU2525AF
BU2527A
BY228
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tda8362b
Abstract: OM8384J OM8383S TDA8363C msc 1697 BGY252 tda9155 PHILIPS OM8383S tda5331t BGY262
Text: Philips Semiconductors Product Discontinuation Notice DN45 June 30, 2001 SEE DN45 NOTICE LETTER FOR APPLICABLE TERMS, CONDITIONS AND CODE DEFINITIONS FOR THESE DISCONTINUED PRODUCTS. REFER TO PHILIPS WEB-SITE "http://www.semiconductors.philips.com/eol" FOR ADDED INFORMATION.
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1N4003ID
1N4005G
1N4006G
30-Jun-02
30-Jun-01
30-Jun-01
31-Dec-01
tda8362b
OM8384J
OM8383S
TDA8363C
msc 1697
BGY252
tda9155
PHILIPS OM8383S
tda5331t
BGY262
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Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE bbSBPBl DDBabSb bfiB bTE D Philips Semiconductors Product specification Silicon diffused power transistor BU2527AF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended
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BU2527AF
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BU2527AF
Abstract: bu2527 ScansUX30
Text: Philips Semiconductors Product specification Silicon diffused power transistor BU2527AF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for
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BU2527AF
0D77bbfl
OT199;
711002b
QQ77hhH
bu2527
ScansUX30
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BU2527
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2527AW GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for
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BU2527AW
100Pi/PD2
BU2527
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Untitled
Abstract: No abstract text available
Text: Product specification Philips Semiconductors Silicon Diffused Power Transistor BU2527AX GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for
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BU2527AX
1E-06
1E-04
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LESAT
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2527AX GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for
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BU2527AX
/PD25C
LESAT
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BU2527AF
Abstract: BU2527
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2527AF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for
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BU2527AF
V2527AF
100-P:
BU2527AF
BU2527
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333AJ
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2527AW GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for
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BU2527AW
1E-06
1E-04
1E-02
333AJ
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BU2527A
Abstract: 7M5 diode
Text: Philips Semiconductors Preliminary specification Silicon Diffused Power Transistor BU2527A GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for
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BU2527A
711DflSb
BU2527A
7M5 diode
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TRANSISTOR K 314
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2527AF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for
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BU2527AF
100Pq
/PD25V
TRANSISTOR K 314
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