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    PHILIPS BAV45 Search Results

    PHILIPS BAV45 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    ADSP-21369KSWZ-1A Analog Devices 266 MHz, Shared Memory,S/PDIF Visit Analog Devices Buy
    ADSP-21369BSWZ-2A Analog Devices 333 MHz, Shared Memory,S/PDIF Visit Analog Devices Buy
    ADSP-21369KSWZ-5A Analog Devices 366MHz Shared Memory,S/PDIF Visit Analog Devices Buy
    ADSP-21369KSWZ-2A Analog Devices 333 MHz, Shared Memory,S/PDIF Visit Analog Devices Buy
    ADSP-21369KBPZ-3A Analog Devices 400 MHZ Sh Memory ,S/PDIF/SDRA Visit Analog Devices Buy

    PHILIPS BAV45 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Zener Diode 3v 400mW

    Abstract: transistor bc548b BC107 transistor TRANSISTOR bc108 bc547 cross reference chart Transistor BC109 DIAC OB3 DIAC Br100 74HCT IC family spec TRANSISTOR mosfet BF998
    Text: INDEX Order Code Description Page Number – Philips Semiconductors 1 485-068 DS750 Development Kit 1 527-749 87C750 Hardware Kit 1 – Philips Semiconductors Data Communications UART Product Line 2 790-590 80C51 In a Box 3 – 80C51 Family Features 3 –


    Original     		PDF DS750 87C750 80C51 PZ3032-12A44 BUK101-50GS BUW12AF BU2520AF 16kHz BY328 Zener Diode 3v 400mW transistor bc548b BC107 transistor TRANSISTOR bc108 bc547 cross reference chart Transistor BC109 DIAC OB3 DIAC Br100 74HCT IC family spec TRANSISTOR mosfet BF998

    BAV45

    Abstract: MBG530 "Logarithmic Amplifiers" sot18 picoampere diode
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D153 BAV45 Picoampere diode Product specification Supersedes data of July 1986 File under Discrete Semiconductors, SC01 1996 Mar 13 Philips Semiconductors Product specification Picoampere diode BAV45 FEATURES


    Original     		PDF M3D153 BAV45 MAM207 OT18/15; BAV45 MBG530 "Logarithmic Amplifiers" sot18 picoampere diode

    BAV45

    Abstract: MBG530
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D153 BAV45 Picoampere diode Product specification Supersedes data of July 1986 1996 Mar 13 Philips Semiconductors Product specification Picoampere diode BAV45 FEATURES DESCRIPTION • Extremely low leakage current:


    Original     		PDF M3D153 BAV45 MAM207 OT18/15; BAV45 MBG530

    philips diode PH 33D

    Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
    Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817


    Original     		PDF 1N821 1N821A 1N823 1N823A 1N825 1N825A 1N827 1N827A 1N829 1N829A philips diode PH 33D PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m

    philips diode PH 33D

    Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
    Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)


    Original     		PDF 1N5817 1N821 1N5818 1N821A 1N5819 philips diode PH 33D philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE

    C5V6 ph

    Abstract: C18 ph PH C5V1 philips diode PH 33D C8V2 PH C10 PH c4v7 ph c5v1ph c3v9ph C33PH
    Text: MARKING CODES contents page Type number to marking code cross reference 2 Marking code to type number cross reference 21 Philips Semiconductors Small-signal and Medium-power Diodes Marking codes TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE TYPE NUMBER


    Original     		PDF 1N821 1N4733A 1N821A 1N4734A 1N823 1N4735A 1N823A C5V6 ph C18 ph PH C5V1 philips diode PH 33D C8V2 PH C10 PH c4v7 ph c5v1ph c3v9ph C33PH

    sod87 dimension

    Abstract: BAV45 SOD80 sod80 dimension sod87 dimension datasheet SC59 SO20 MSB301 MSB302 BZA100
    Text: SECTION 18 PACKING AND PACKING QUANTITIES contents page SCOPE 18 - 2 SURFACE-MOUNT DEVICES 18 - 2 Tape specification 18 - 2 Reel specification 18 - 7 Packing quantities 18 - 8 LEADED DEVICES Axial diodes 18 - 9 18 - 9 Tape specification 18 - 9 Reel specification


    Original     		PDF OD83A OD88A OT18/15 BAV45 sod87 dimension SOD80 sod80 dimension sod87 dimension datasheet SC59 SO20 MSB301 MSB302 BZA100

    BAV45

    Abstract: MBG530 J-10 MAM207
    Text: Philips Semiconductors Product specification Picoampere diode BAV45 FEATURES DESCRIPTION • Extremely low leakage current: max. 5 pA Silicon diode in a metal TO -18 can. It has an extremely low leakage current over a wide temperature range combined with a low capacitance and is not sensitive


    OCR Scan     		PDF BAV45 MAM207 7110fl2b BAV45 MBG530 J-10 MAM207

    Untitled

    Abstract: No abstract text available
    Text: ^ 5 3 ^ 3 1 002b314 bTE N AMER PHILIPS/DISCRETE APX b3E BAV45 D _ S PICOAMPERE DIODE Silicon diode in a metal envelope. It has an extremely low leakage current over a wide temperature range combined with a low capacitance and is not sensitive to light. It is intended for clamping,


    OCR Scan     		PDF 002b314 BAV45 bbS3331 002b317 002b31fl bbS3T31

    TELEVISION EHT TRANSFORMERS

    Abstract: BYW96E PH smd code Z9P germanium transistor BY527 EQUIVALENT BYD33D BAX12 BB212 BB515 BBY31
    Text: Philips Semiconductors Diodes Contents page SELECTION GUIDE Small-signal diodes 5 Tuner diodes 7 FM detection diodes 8 Low leakage diodes 8 Schottky barrier switching diodes 9 Stabistors Voltage regulators 9 10 Voltage reference diodes 11 Transient suppressor diodes


    OCR Scan     		PDF LCD01 TELEVISION EHT TRANSFORMERS BYW96E PH smd code Z9P germanium transistor BY527 EQUIVALENT BYD33D BAX12 BB212 BB515 BBY31

    BAV45A

    Abstract: do-34 DO-34 ZENER 1N827A 1N829 BAV45 Zener Diodes 6.2 V BYV10-30 BAS45 BAT81
    Text: N AMER PHILIPS/DISCRETE 2SE «D • bbSSTSl OGltilô'i S ■ T ' 0 3 - ' 0 £f Small Signal Devices 11 LOW LEAKAGE DIODES TYPE PKG BAV45A BAS45 TO-18 DO-34 Vr V (m Ai ¥ IR 20 125 50 225 5pA 1nA Vp (V) 1.00 0.80 Vft @ m f 5 125 @ r Ip (rnAK I 1°5 • ■


    OCR Scan     		PDF febS3131 T-03-09 BAV45A BAS45 DO-34 BAT81 200nA BAT82 DO-34 ZENER 1N827A 1N829 BAV45 Zener Diodes 6.2 V BYV10-30

    BAV45A

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE 2SE «D • bbSaTBl aaiblfi'l S ■ 'f'03-'0ct Small Signal Devices LOW LEAKAGE DIODES TYPE PKG BAV45A BAS45 TO-18 DO-34 Vr V 20 125 ¥ |r 50 225 5pA 1nA (m A l (S VF (V ) 1.00 0.80 Vr m 5 125 @ r If (m A> I 10 ■ 5 c <f - " 600


    OCR Scan     		PDF BAV45A BAS45 DO-34 BAT81 BAT82 BAT83 BAT85 BAT86 BYV10-20 BYV10-30 BAV45A

    BAV45

    Abstract: No abstract text available
    Text: 5bE D TllD öSh GQ402Ö 1 4Ö3 • PHIN BAV45 » SbE 3> PHILIPS INTERNA TI O NA L T - 0 3 - 0 * 1 PICOAMPERE DIODE Silicon diode in a metal envelope. It has an extremely low leakage current over a wide temperature range combined with a low capacitance and is not sensitive to light. It is intended for clamping,


    OCR Scan     		PDF BAV45 711002b 711Qfl2b T-03-09

    BAS45A

    Abstract: BAS45AL
    Text: Philips Semiconductors Concise Catalogue 1996 SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Small-signal diodes LOW-LEAKAGE CURRENT DIODES ratings type number V rrm max. V Vr max. (V) 1 ' r 1> max. (nA) 125 125 1 4 125 75 20 75 75 75 1 5 0.01


    OCR Scan     		PDF BAS45A DO-34 BAS45AL BAS116 BAV45 BAV170 BAV199 BAW156

    BAV45

    Abstract: philips BAV45
    Text: • ^ 53^31 002 b3 1 4 t>T2 N AMER P H I L I P S / D I S C R E T E ■ APX BAV45 bTE T> y PICOAMPERE DIODE Silicon diode in a metal envelope. It has an extremely low leakage current over a wide temperature range combined with a low capacitance and is not sensitive to light. It is intended for clamping,


    OCR Scan     		PDF 002b314 BAV45 bb53131 BAV45 philips BAV45

    DO-34

    Abstract: BA231 BAV45A BAT81 1N825A
    Text: Small Signal Leaded Devices Detection Diode Diode Capacitance Type BA231 Pkg VR V If (mA) cd (pF) DO-35 50 200 1.2 @ VR (V) and VF (mV) f (MHz) 'F {(xA) 360-420 1 (w 10 Low Leakage Diodes •f (V) (mA) TO-18 DO-34 20 125 50 225 5pA 1nA •r @ u. BAV45,A


    OCR Scan     		PDF BA231 DO-35 BAV45 BAS45 DO-34 BA480 BA481 BAT81 BAT82 BAT83 DO-34 BA231 BAV45A 1N825A

    BGY41

    Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
    Text: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.


    OCR Scan     		PDF LCD01 BGY41 BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc

    bf0262a

    Abstract: BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94
    Text: Alphanumeric Type Index Typo Page Type Page Type Page Page Type 1N821 1N821A 1N823 1N823A 1N825 11 11 11 11 11 1N5227B 1N5228B 1N5229B 1N5230B 1N5231B 13 13 13 13 13 2N2905A 2N2906 2N2906A 2N2907 2N2907A 17 17 17 17 17 2N6599 2N6600 2N6601 2N7000 2N7002 1N825A


    OCR Scan     		PDF 1N821 1N821A 1N823 1N823A 1N825 1N825A 1N827 1N827A 1N829 1N829A bf0262a BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94

    transistor f6 13003

    Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
    Text: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.


    OCR Scan     		PDF SC08b transistor f6 13003 equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350

    BA100 diode

    Abstract: BA102 AAY20 B2M1-5 1N2528 PH1021 OA210 diode DIODE AA116 BB105 GAZ17
    Text: r im m i if Hill tWIBHHH ElBtlAlEHTS I SIISHIIffl IT 1 . 1. m n t IElHlllS{|iliitltrs|lfl The Grampians Shepherds Bush Road,. London W6 7NF ' ' Although every care is taken with the preparation o f this book the publishers will, not be responsible fo r any


    OCR Scan     		PDF A4/10 A5/62 A5/105 A1000 AA100 AA110 AA111 AA112 AA113 AA114 BA100 diode BA102 AAY20 B2M1-5 1N2528 PH1021 OA210 diode DIODE AA116 BB105 GAZ17

    FD6666 diode

    Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
    Text: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5


    OCR Scan     		PDF A4/10 A5/62 A5/105 A1000 AA100 AA110 AA111 AA112 AA113 AA114 FD6666 diode diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82

    RPY 86

    Abstract: valvo halbleiter RPY94 CQY 24 BV EI 30-20 3001 LDR 03 diode byx 64 600 valvo transistoren KP101A BAV99-1
    Text: Elektronik. Wir bauen die Elemente. v a i v D Halbleiterbauelemente Produktprogramm DH, April 1984 Elektronik. Wir bauen die Elemente Unser Arbeitsgebiet - besonders die Mikroelektronik - entwickelt sich immer rascher zum Motor für eine Vielzahl von Innovationen. Mit gründ­


    OCR Scan     		PDF

    BPW22A

    Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
    Text: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey


    OCR Scan     		PDF BS9000, D3007 HE4000B 80RIBUTION BS9000 BPW22A cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8

    APY12

    Abstract: BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367
    Text: Semiconductors Semiconducteurs Halbleiter YEARLY EDITION - EDITION AN N UELLE - jX H R LIC H E AU SG A BE SIXTH EDITION SIXIEME EDITION SECHSTE AUSGABE 1978 Compiled by: Association Internationale PRO ELECTRON, Bd. de Waterloo, 103, B 1000 BRUSSELS Published by: JE. E KLUWER, B 2100 DEURNE-ANTWERP


    OCR Scan     		PDF Edition-1978) Ausgabe-1978) BS3934 SO-26 OT-114 NS371 APY12 BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367