TGA4501 Search Results
TGA4501 Datasheets (3)
Part |
ECAD Model |
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Description |
Curated |
Datasheet Type |
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TGA4501-EPU | TriQuint Semiconductor | 28-31 GHz Ka Band HPA | Original | |||
TGA4501-EPU | TriQuint Semiconductor | 28-31 GHz Ka Band HPA | Original | |||
TGA4501-SCC | TriQuint Semiconductor | RF Amplifier, General purpose amplifier, Single channel, Chip, 31000 MHz | Original |
TGA4501 Datasheets Context Search
Catalog Datasheet |
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Document Tags |
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Contextual Info: Product Data Sheet September 27, 2002 TGA4501-SCC 24-31 GHz Ka Band HPA Key Features • 0.25 um pHEMT Technology • 23 dB Nominal Gain • 34.5 dBm Nominal P1dB • 40 dBm IMD3 Typical • Bias 6 V @ 2.1 A Primary Applications • Satellite Ground Terminal |
Original |
TGA4501-SCC TGA4501-SCC TGA4501 0007-inch | |
136.21
Abstract: 901 704 16 08 55 TGA4501-EPU TGA4501-SCC 914-28 51815
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TGA4501-SCC TGA4501-EPU 136.21 901 704 16 08 55 TGA4501-EPU TGA4501-SCC 914-28 51815 | |
Contextual Info: Advanced Product Information August 2, 2002 TGA4501-EPU 28-31 GHz Ka Band HPA Key Features • 0.25 um pHEMT Technology • 23 dB Nominal Gain • 34.5 dBm Nominal P1dB • 40 dBm OTOI Typical • Bias 6 V @ 2.1 A Primary Applications • Satellite Ground Terminal |
Original |
TGA4501-EPU 0007-inch | |
TGA4505-EPUContextual Info: Product Data Sheet Not Recommended for New Designs July 22, 2003 TGA4501-SCC TriQuint Recommends the TGA4505-EPU be used for New Designs 24-31 GHz Ka Band HPA Key Features • 0.25 um pHEMT Technology • 23 dB Nominal Gain • 34.5 dBm Nominal P1dB • 40 dBm IMD3 Typical |
Original |
TGA4501-SCC TGA4505-EPU TGA4501 0007-inch | |
TGA4501-SCCContextual Info: Not Recommended for New Designs Product Data Sheet November 19, 2003 TGA4501-SCC TriQuint Recommends the TGA4505-EPU be used for New Designs 24-31 GHz Ka Band HPA Key Features • 0.25 um pHEMT Technology • 23 dB Nominal Gain • 34.5 dBm Nominal P1dB • |
Original |
TGA4501-SCC TGA4505-EPU TGA4501 0007-inch | |
TGA4501-SCCContextual Info: Product Data Sheet October 7, 2002 TGA4501-SCC 24-31 GHz Ka Band HPA Key Features • 0.25 um pHEMT Technology • 23 dB Nominal Gain • 34.5 dBm Nominal P1dB • 40 dBm IMD3 Typical • Bias 6 V @ 2.1 A Primary Applications • Satellite Ground Terminal |
Original |
TGA4501-SCC TGA4501-SCC TGA4501 0007-inch | |
Contextual Info: Advanced Product Information December 14, 2001 TGA4501-EPU 28-31 GHz Ka Band HPA Key Features • 0.25 um pHEMT Technology • 18 dB Nominal Gain • 34.5 dBm Nominal P1dB • 40 dBm OTOI Typical • Bias 6 V @ 2.1 A Primary Applications • Satellite Ground Terminal |
Original |
TGA4501-EPU 0007-inch | |
TGA4501-EPUContextual Info: Advanced Product Information December 14, 2001 TGA4501-EPU 28-31 GHz Ka Band HPA Key Features • 0.25 um pHEMT Technology • 18 dB Nominal Gain • 34.5 dBm Nominal P1dB • 40 dBm OTOI Typical • Bias 6 V @ 2.1 A Primary Applications • Satellite Ground Terminal |
Original |
TGA4501-EPU 0007-inch TGA4501-EPU | |
ka band high power fet amplifier schematicContextual Info: 0.25-µm mmW pHEMT 2MI Process Data Sheet 4.6 µm PLATING CAP TOP PLATE 2000 Å NITRIDE 0.75 µm FIRST METAL TaN RESISTOR T-GATE ACTIVE REGION OHMIC METAL EXCEPT VIA SEMI-INSULATING GaAs SUBSTRATE VIA UNDER CAP 0.25-µm 2MI Process Cross Section General Description |
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12 volt-30 amp power diode
Abstract: ka-band amplifier high power fet amplifier schematic fet ft 30 GHZ ka band high power fet amplifier schematic pHEMT transistor ka-band mixer 10 ghz driver amplifier FET differential amplifier circuit Ka-band
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