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    TGA4501 Search Results

    TGA4501 Datasheets (3)

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    ECAD Model
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    Datasheet Type
    PDF
    TGA4501-EPU
    TriQuint Semiconductor 28-31 GHz Ka Band HPA Original PDF
    TGA4501-EPU
    TriQuint Semiconductor 28-31 GHz Ka Band HPA Original PDF
    TGA4501-SCC
    TriQuint Semiconductor RF Amplifier, General purpose amplifier, Single channel, Chip, 31000 MHz Original PDF

    TGA4501 Datasheets Context Search

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    Contextual Info: Product Data Sheet September 27, 2002 TGA4501-SCC 24-31 GHz Ka Band HPA Key Features • 0.25 um pHEMT Technology • 23 dB Nominal Gain • 34.5 dBm Nominal P1dB • 40 dBm IMD3 Typical • Bias 6 V @ 2.1 A Primary Applications • Satellite Ground Terminal


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    TGA4501-SCC TGA4501-SCC TGA4501 0007-inch PDF

    136.21

    Abstract: 901 704 16 08 55 TGA4501-EPU TGA4501-SCC 914-28 51815
    Contextual Info: S-Parameter Data for TGA4501-SCC TGA4501-EPU Vd = 6V, Id = 2.12A ±5% Frequency GHz 20 20.1 20.2 20.3 20.4 20.5 20.6 20.7 20.8 20.9 21 21.1 21.2 21.3 21.4 21.5 21.6 21.7 21.8 21.9 22 22.1 22.2 22.3 22.4 22.5 22.6 22.7 22.8 22.9 23 23.1 23.2 23.3 23.4 23.5


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    TGA4501-SCC TGA4501-EPU 136.21 901 704 16 08 55 TGA4501-EPU TGA4501-SCC 914-28 51815 PDF

    Contextual Info: Advanced Product Information August 2, 2002 TGA4501-EPU 28-31 GHz Ka Band HPA Key Features • 0.25 um pHEMT Technology • 23 dB Nominal Gain • 34.5 dBm Nominal P1dB • 40 dBm OTOI Typical • Bias 6 V @ 2.1 A Primary Applications • Satellite Ground Terminal


    Original
    TGA4501-EPU 0007-inch PDF

    TGA4505-EPU

    Contextual Info: Product Data Sheet Not Recommended for New Designs July 22, 2003 TGA4501-SCC TriQuint Recommends the TGA4505-EPU be used for New Designs 24-31 GHz Ka Band HPA Key Features • 0.25 um pHEMT Technology • 23 dB Nominal Gain • 34.5 dBm Nominal P1dB • 40 dBm IMD3 Typical


    Original
    TGA4501-SCC TGA4505-EPU TGA4501 0007-inch PDF

    TGA4501-SCC

    Contextual Info: Not Recommended for New Designs Product Data Sheet November 19, 2003 TGA4501-SCC TriQuint Recommends the TGA4505-EPU be used for New Designs 24-31 GHz Ka Band HPA Key Features • 0.25 um pHEMT Technology • 23 dB Nominal Gain • 34.5 dBm Nominal P1dB •


    Original
    TGA4501-SCC TGA4505-EPU TGA4501 0007-inch PDF

    TGA4501-SCC

    Contextual Info: Product Data Sheet October 7, 2002 TGA4501-SCC 24-31 GHz Ka Band HPA Key Features • 0.25 um pHEMT Technology • 23 dB Nominal Gain • 34.5 dBm Nominal P1dB • 40 dBm IMD3 Typical • Bias 6 V @ 2.1 A Primary Applications • Satellite Ground Terminal


    Original
    TGA4501-SCC TGA4501-SCC TGA4501 0007-inch PDF

    Contextual Info: Advanced Product Information December 14, 2001 TGA4501-EPU 28-31 GHz Ka Band HPA Key Features • 0.25 um pHEMT Technology • 18 dB Nominal Gain • 34.5 dBm Nominal P1dB • 40 dBm OTOI Typical • Bias 6 V @ 2.1 A Primary Applications • Satellite Ground Terminal


    Original
    TGA4501-EPU 0007-inch PDF

    TGA4501-EPU

    Contextual Info: Advanced Product Information December 14, 2001 TGA4501-EPU 28-31 GHz Ka Band HPA Key Features • 0.25 um pHEMT Technology • 18 dB Nominal Gain • 34.5 dBm Nominal P1dB • 40 dBm OTOI Typical • Bias 6 V @ 2.1 A Primary Applications • Satellite Ground Terminal


    Original
    TGA4501-EPU 0007-inch TGA4501-EPU PDF

    ka band high power fet amplifier schematic

    Contextual Info: 0.25-µm mmW pHEMT 2MI Process Data Sheet 4.6 µm PLATING CAP TOP PLATE 2000 Å NITRIDE 0.75 µm FIRST METAL TaN RESISTOR T-GATE ACTIVE REGION OHMIC METAL EXCEPT VIA SEMI-INSULATING GaAs SUBSTRATE VIA UNDER CAP 0.25-µm 2MI Process Cross Section General Description


    Original
    PDF

    12 volt-30 amp power diode

    Abstract: ka-band amplifier high power fet amplifier schematic fet ft 30 GHZ ka band high power fet amplifier schematic pHEMT transistor ka-band mixer 10 ghz driver amplifier FET differential amplifier circuit Ka-band
    Contextual Info: 0.25-µm mmW pHEMT 2MI Process Data Sheet 4.6 µm PLATING CAP TOP PLATE 2000 Å NITRIDE 0.75 µm FIRST METAL TaN RESISTOR T-GATE ACTIVE REGION OHMIC METAL EXCEPT VIA SEMI-INSULATING GaAs SUBSTRATE VIA UNDER CAP 0.25-µm 2MI Process Cross Section General Description


    Original
    PDF