Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    PH6660 Search Results

    PH6660 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    PH6660 Philips Semiconductors N-Channel Enhancement Mode Vertical D-MOS Transistor Original PDF
    PH6660 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF

    PH6660 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    KP902A

    Abstract: kp904a BFW96 s0212 3N138 MFE3002 3N138 mosfet 3SK72 KT904 SD2150E
    Text: MOSFET Item Number Part Number Manufacturer V BR DSS IDss Max (V) tA) PD Max (W) 50m 50m 50m 50m 50m 50m 50m 1.0 1.0 250m 1.0 250m 40m 70m 360m 200m 150m 150m 150m 150m 150m 360m 20 20 625m 20 1.0 0.36 1.0 ros (on) (Ohms) 9FS Min (S) VGS(th) Clsa t, Max Max


    Original
    2N48S0A BFW96 3N139 3N138 SST211 NOS102B NOS101B KP902A kp904a s0212 MFE3002 3N138 mosfet 3SK72 KT904 SD2150E PDF

    Untitled

    Abstract: No abstract text available
    Text: J PH6659 PH6660 PH6661 V N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistors, in TO-92 variant envelopes and designed for application as low power, high-frequency inverters and line drivers. Features •


    OCR Scan
    PH6659 PH6660 PH6661 PDF

    S 170 TRANSISTOR

    Abstract: No abstract text available
    Text: MIE D I 711QfiBb 002b7bl T B P H I N PH6659 PH6660 PH6661 PHILIPS INTERNATIONAL T -3 S -2 S N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistors, in TO-92 variant envelopes and designed for application as low power, high-frequency inverters and line drivers.


    OCR Scan
    711QfiBb 002b7bl PH6659 PH6660 PH6661 711062h PH6659 S 170 TRANSISTOR PDF

    PH6659

    Abstract: PH6660 PH6661 max3560
    Text: PH6659 PH6660 P H 6661 Jy N-CHANNEL ENHANCEMENT M ODE VERTICAL D-MOS TRAN SISTO R N-channel enhancement mode vertical D -M O S transistore, in TO -92 variant envelopes and designed for application as low power, high-frequency inverters and line drivers. Features


    OCR Scan
    PH6659 PH6660 PH6661 PH6659 PH6660 bbS3131 PH6661 max3560 PDF

    PH6659

    Abstract: PH6660 PH6661
    Text: MI E » 7 1 1 Q û E t G0 5 b 7 b l I PHILIPS PH6659 PH6660 PH6661 T BPHIN INTERNATIONAL T-3S-2S N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistors, in TO-92 variant envelopes and designed for application as low power, high-frequency inverters and line drivers.


    OCR Scan
    G05b7bl PH6659 PH6660 PH6661 711Dfl2h 0to10V PH6659 PH6661 PDF

    82C250T

    Abstract: BS170 SMD BC547b smd 59012 h 331 pc74hct4066
    Text: Application Note CAN Physical Layer Concepts for the P8xC592 Microcontroller Harald Eiselc Product Conccpt & Application Laboratory Hamburg, F. R. Germany Keywords Controller Area Network, physical layer. ISO drafts, rwo-wire bus line, differential transceiver. P8xC592 microcon­


    OCR Scan
    P8xC592 HKI/AN91027 PCA82C250T P8xCE598 P8xC592 PCA82C250T 100nF 82C250T BS170 SMD BC547b smd 59012 h 331 pc74hct4066 PDF

    transistor f6 13003

    Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
    Text: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.


    OCR Scan
    SC08b transistor f6 13003 equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350 PDF

    ZTX752 equivalent

    Abstract: transistor 42-10a data BC369 FXTA92 BSS98
    Text: B o ok 1 Through Hole Com ponents Table of Contents Section Introduction 1 Selection Guide 2 Datasheets 3 Package Outline Dimensions 4 Tape and Reel Specifications 5 Surface Mount Alternatives 6 Alphanumeric Index 7 Book 2 Surface Mount Components - Available on Request


    OCR Scan
    ZVP2106C ZVP2110A ZVP2110C ZVP2120A ZTX788B ZVP2120C ZVP3306A ZVP3310A ZVP4105A 2110C ZTX752 equivalent transistor 42-10a data BC369 FXTA92 BSS98 PDF

    2106a

    Abstract: BST72A CROSS 0545N2 vn1720m ZVN2106A ZVN3306A MPF910 zetex zvp2120a VP0545N2 2N7019
    Text: CROSS R EF ER E N C E LIST Industry Part No. Zetex Suggested Replacem ent 2N 6659 2N 6660 2N6661 ZVN2106B ZVN2106B ZVN2110B 2N 7000 2N7001 2N7002 2N7007 2N 7008 2N 7019 2N 7025 2N 7000 ZVN3320F 2N 7002 ZVN3320A ZVN3306A ZVP3306F ZVP2106A BS107 BS107A BS108


    OCR Scan
    2N6661 2N7001 2N7002 2N7007 BS107 BS107A BS108 BS170 BS250 BSR64 2106a BST72A CROSS 0545N2 vn1720m ZVN2106A ZVN3306A MPF910 zetex zvp2120a VP0545N2 2N7019 PDF

    BGY41

    Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
    Text: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.


    OCR Scan
    LCD01 BGY41 BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc PDF

    FET BFW10

    Abstract: KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11
    Text: INDEX _ INDEX OF TYPE NUM BERS The inclusion of a type number in this publication does not necessarily imply its availability. Type no. book section Type no. book section Type no. book section BA220 BA221 BA223 BA281 BA314 SCOI SCOI SCOI SCOI


    OCR Scan
    BA220 BA221 BA223 BA281 BA314 BA315 BA316 BA317 BA318 BA423 FET BFW10 KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11 PDF