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    PG-TO263-3 PACKAGE Search Results

    PG-TO263-3 PACKAGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation
    XPH2R106NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    XPH3R206NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 70 A, 0.0032 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TPH4R008QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 86 A, 0.004 Ohm@10V, SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation

    PG-TO263-3 PACKAGE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SMD-2520

    Abstract: 3N10L smd diode 104
    Text: IPB70N10S3L-12 IPI70N10S3L-12, IPP70N10S3L-12 OptiMOS -T Power-Transistor Product Summary V DS 100 V R DS on ,max (SMD version) 12 mW ID 70 A Features PG-TO263-3-2 • N-channel - Enhancement mode PG-TO262-3-1 PG-TO220-3-1 • Automotive AEC Q101 qualified


    Original     		PDF IPB70N10S3L-12 IPI70N10S3L-12, IPP70N10S3L-12 PG-TO262-3-1 PG-TO263-3-2 PG-TO220-3-1 IPI70N10S3L-12 SMD-2520 3N10L smd diode 104

    4p03L11

    Abstract: 4p03l DIODE smd marking Ag IPB45P03P4L-11 IPI45P03P4L-11 IPP45P03P4L-11 PG-TO263-3-2 4p03
    Text: IPB45P03P4L-11 IPI45P03P4L-11, IPP45P03P4L-11 OptiMOS -P2 Power-Transistor Product Summary V DS -30 V R DS on (SMD Version) 10.8 mΩ ID -45 A Features • P-channel - Logic Level - Enhancement mode PG-TO263-3-2 • AEC qualified PG-TO262-3-1 PG-TO220-3-1


    Original     		PDF IPB45P03P4L-11 IPI45P03P4L-11, IPP45P03P4L-11 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 4P03L11 IPI45P03P4L-11 4p03L11 4p03l DIODE smd marking Ag IPB45P03P4L-11 IPI45P03P4L-11 IPP45P03P4L-11 PG-TO263-3-2 4p03

    4P04L03

    Abstract: IPP120P04P4L-03 IPB120P04P4L-03
    Text: IPB120P04P4L-03 IPI120P04P4L-03, IPP120P04P4L-03 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on (SMD Version) 3.1 mW ID -120 A Features • P-channel - Logic Level - Enhancement mode PG-TO263-3-2 • AEC qualified PG-TO262-3-1 PG-TO220-3-1


    Original     		PDF IPB120P04P4L-03 IPI120P04P4L-03, IPP120P04P4L-03 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 IPI120P04P4L-03 4P04L03 IPP120P04P4L-03

    4P03L07

    Abstract: smd diode UM 07 DIODE smd marking Ag 4p03 4p03l IPB80P03P4L-07 IPI80P03P4L-07 IPP80P03P4L-07 PG-TO263-3-2 optimos battery protection reverse
    Text: IPB80P03P4L-07 IPI80P03P4L-07, IPP80P03P4L-07 OptiMOS -P2 Power-Transistor Product Summary V DS -30 V R DS on (SMD Version) 6.9 mΩ ID -80 A Features • P-channel - Logic Level - Enhancement mode PG-TO263-3-2 • AEC qualified PG-TO262-3-1 PG-TO220-3-1


    Original     		PDF IPB80P03P4L-07 IPI80P03P4L-07, IPP80P03P4L-07 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 4P03L07 IPI80P03P4L-07 4P03L07 smd diode UM 07 DIODE smd marking Ag 4p03 4p03l IPB80P03P4L-07 IPI80P03P4L-07 IPP80P03P4L-07 PG-TO263-3-2 optimos battery protection reverse

    4P03L04

    Abstract: 4p03 IPB80P03P4L-04 146a marking diode DIODE smd marking Ag PG-TO263-3-2 IPI80P03P4L-04 IPP80P03P4L-04 4p03l
    Text: IPB80P03P4L-04 IPI80P03P4L-04, IPP80P03P4L-04 OptiMOS -P2 Power-Transistor Product Summary V DS -30 V R DS on (SMD Version) 4.1 mΩ ID -80 A Features • P-channel - Logic Level - Enhancement mode PG-TO263-3-2 • AEC qualified PG-TO262-3-1 PG-TO220-3-1


    Original     		PDF IPB80P03P4L-04 IPI80P03P4L-04, IPP80P03P4L-04 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 4P03L04 IPI80P03P4L-04 4P03L04 4p03 IPB80P03P4L-04 146a marking diode DIODE smd marking Ag PG-TO263-3-2 IPI80P03P4L-04 IPP80P03P4L-04 4p03l

    IPP120P04P4-04

    Abstract: 340ua IPI120P04P4-04 4P04
    Text: IPB120P04P4-04 IPI120P04P4-04, IPP120P04P4-04 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on (SMD Version) 3.5 mW ID -120 A Features • P-channel - Normal Level - Enhancement mode PG-TO263-3-2 • AEC qualified PG-TO262-3-1 PG-TO220-3-1


    Original     		PDF IPB120P04P4-04 IPI120P04P4-04, IPP120P04P4-04 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 IPI120P04P4-04 IPP120P04P4-04 340ua 4P04

    3pn0403

    Abstract: IPB100N04S3-03 IPP100N04S3-03 IPI100N04S3-03 PG-TO263-3-2 Application Note ANPS071E
    Text: IPB100N04S3-03 IPI100N04S3-03, IPP100N04S3-03 OptiMOS -T Power-Transistor Product Summary V DS 40 V R DS on (SMD Version) 2.5 mΩ ID 100 A Features • N-channel - Enhancement mode PG-TO263-3-2 • Automotive AEC Q101 qualified PG-TO262-3-1 PG-TO220-3-1


    Original     		PDF IPB100N04S3-03 IPI100N04S3-03, IPP100N04S3-03 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 3PN0403 IPI100N04S3-03 3pn0403 IPB100N04S3-03 IPP100N04S3-03 IPI100N04S3-03 PG-TO263-3-2 Application Note ANPS071E

    3N0625

    Abstract: ANPS071E IPB25N06S3-25 IPI25N06S3-25 IPP25N06S3-25 PG-TO263-3-2
    Text: IPB25N06S3-25 IPI25N06S3-25, IPP25N06S3-25 OptiMOS -T2 Power-Transistor Product Summary V DS 55 R DS on ,max (SMD version) 24.8 ID 25 V mΩ A Features • N-channel - Enhancement mode PG-TO263-3-2 • Automotive AEC Q101 qualified PG-TO262-3-1 PG-TO220-3-1


    Original     		PDF IPB25N06S3-25 IPI25N06S3-25, IPP25N06S3-25 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 3N0625 IPI25N06S3-25 3N0625 ANPS071E IPB25N06S3-25 IPI25N06S3-25 IPP25N06S3-25 PG-TO263-3-2

    3N0607

    Abstract: IPP80N06S3-07 ANPS071E IPB80N06S3-07 IPI80N06S3-07 PG-TO263-3-2 D100004
    Text: IPB80N06S3-07 IPI80N06S3-07, IPP80N06S3-07 OptiMOS -T2 Power-Transistor Product Summary V DS 55 V R DS on ,max (SMD version) 6.5 mΩ ID 80 A Features • N-channel - Enhancement mode PG-TO263-3-2 • Automotive AEC Q101 qualified PG-TO262-3-1 PG-TO220-3-1


    Original     		PDF IPB80N06S3-07 IPI80N06S3-07, IPP80N06S3-07 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 3N0607 IPI80N06S3-07 3N0607 IPP80N06S3-07 ANPS071E IPB80N06S3-07 IPI80N06S3-07 PG-TO263-3-2 D100004

    smd diode code F45

    Abstract: ANPS071E IPB45N06S3-16 IPI45N06S3-16 IPP45N06S3-16 PG-TO263-3-2 marking code D23 smd
    Text: IPB45N06S3-16 IPI45N06S3-16, IPP45N06S3-16 OptiMOS -T2 Power-Transistor Product Summary V DS 55 R DS on ,max (SMD version) 15.4 ID 45 V mΩ A Features • N-channel - Enhancement mode PG-TO263-3-2 • Automotive AEC Q101 qualified PG-TO262-3-1 PG-TO220-3-1


    Original     		PDF IPB45N06S3-16 IPI45N06S3-16, IPP45N06S3-16 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 3N0616 IPI45N06S3-16 smd diode code F45 ANPS071E IPB45N06S3-16 IPI45N06S3-16 IPP45N06S3-16 PG-TO263-3-2 marking code D23 smd

    3N06L05

    Abstract: smd marking g23 ANPS071E IPB80N06S3L-05 IPI80N06S3L-05 IPP80N06S3L-05 PG-TO263-3-2 D1053 SMD MARKING CODE g23
    Text: IPB80N06S3L-05 IPI80N06S3L-05, IPP80N06S3L-05 OptiMOS -T2 Power-Transistor Product Summary V DS 55 V R DS on ,max (SMD version) 4.5 mΩ ID 80 A Features • N-channel - Enhancement mode PG-TO263-3-2 • Automotive AEC Q101 qualified PG-TO262-3-1 PG-TO220-3-1


    Original     		PDF IPB80N06S3L-05 IPI80N06S3L-05, IPP80N06S3L-05 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 3N06L05 IPI80N06S3L-05 3N06L05 smd marking g23 ANPS071E IPB80N06S3L-05 IPI80N06S3L-05 IPP80N06S3L-05 PG-TO263-3-2 D1053 SMD MARKING CODE g23

    3N0403

    Abstract: IPB80N04S3-03 PG-TO263-3-2 ANPS071E IPI80N04S3-03 IPP80N04S3-03 J3205
    Text: IPB80N04S3-03 IPI80N04S3-03, IPP80N04S3-03 OptiMOS -T Power-Transistor Product Summary V DS 40 V R DS on ,max (SMD version) 3.2 mΩ ID 80 A Features • N-channel - Enhancement mode PG-TO263-3-2 • Automotive AEC Q101 qualified PG-TO262-3-1 PG-TO220-3-1


    Original     		PDF IPB80N04S3-03 IPI80N04S3-03, IPP80N04S3-03 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 3N0403 IPI80N04S3-03 3N0403 IPB80N04S3-03 PG-TO263-3-2 ANPS071E IPI80N04S3-03 IPP80N04S3-03 J3205

    3N06L06

    Abstract: IPI80N06S3L06 ANPS071E IPB80N06S3L-06 IPI80N06S3L-06 IPP80N06S3L-06 PG-TO263-3-2
    Text: IPB80N06S3L-06 IPI80N06S3L-06, IPP80N06S3L-06 OptiMOS -T2 Power-Transistor Product Summary V DS 55 V R DS on ,max (SMD version) 5.6 mΩ ID 80 A Features • N-channel - Enhancement mode PG-TO263-3-2 • Automotive AEC Q101 qualified PG-TO262-3-1 PG-TO220-3-1


    Original     		PDF IPB80N06S3L-06 IPI80N06S3L-06, IPP80N06S3L-06 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 3N06L06 IPI80N06S3L-06 3N06L06 IPI80N06S3L06 ANPS071E IPB80N06S3L-06 IPI80N06S3L-06 IPP80N06S3L-06 PG-TO263-3-2

    4N03L03

    Abstract: 4N03L02 IPI80N03S4L-03 IPP80N03S4L-03 ANPS071E IPB80N03S4L-02 PG-TO263-3-2 C25 smd
    Text: IPB80N03S4L-02 IPI80N03S4L-03, IPP80N03S4L-03 OptiMOS -T2 Power-Transistor Product Summary Features V DS 30 V R DS on ,max (SMD version) 2.4 mΩ ID 80 A PG-TO263-3-2 • N-channel - Enhancement mode PG-TO262-3-1 PG-TO220-3-1 • Automotive AEC Q101 qualified


    Original     		PDF IPB80N03S4L-02 IPI80N03S4L-03, IPP80N03S4L-03 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 4N03L02 IPI80N03S4L-03 4N03L03 4N03L02 IPI80N03S4L-03 IPP80N03S4L-03 ANPS071E IPB80N03S4L-02 PG-TO263-3-2 C25 smd

    3PN0402

    Abstract: IPB120N04S3-02 ANPS071E IPI120N04S3-02 IPP120N04S3-02 PG-TO263-3-2 infineon smd package
    Text: IPB120N04S3-02 IPI120N04S3-02, IPP120N04S3-02 OptiMOS -T Power-Transistor Product Summary V DS 40 V R DS on ,max (SMD version) 2.0 mΩ ID 120 A Features • N-channel - Enhancement mode PG-TO263-3-2 • Automotive AEC Q101 qualified PG-TO262-3-1 PG-TO220-3-1


    Original     		PDF IPB120N04S3-02 IPI120N04S3-02, IPP120N04S3-02 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 3PN0402 IPI120N04S3-02 3PN0402 IPB120N04S3-02 ANPS071E IPI120N04S3-02 IPP120N04S3-02 PG-TO263-3-2 infineon smd package

    3N06L13

    Abstract: ANPS071E IPB45N06S3L-13 IPI45N06S3L-13 IPP45N06S3L-13 PG-TO263-3-2
    Text: IPB45N06S3L-13 IPI45N06S3L-13, IPP45N06S3L-13 OptiMOS -T2 Power-Transistor Product Summary V DS 55 R DS on ,max (SMD version) 13.1 ID 45 V mΩ A Features • N-channel - Enhancement mode PG-TO263-3-2 • Automotive AEC Q101 qualified PG-TO262-3-1 PG-TO220-3-1


    Original     		PDF IPB45N06S3L-13 IPI45N06S3L-13, IPP45N06S3L-13 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 3N06L13 IPI45N06S3L-13 3N06L13 ANPS071E IPB45N06S3L-13 IPI45N06S3L-13 IPP45N06S3L-13 PG-TO263-3-2

    3N10L16

    Abstract: 30025A DIODE smd marking Ag IPB50N10S3L-16 smd diode 949 SMD TRANSISTOR MARKING DD IPI50N10S3L-16 IPP50N10S3L-16 PG-TO263-3-2 DIODE smd marking v1
    Text: IPB50N10S3L-16 IPI50N10S3L-16, IPP50N10S3L-16 OptiMOS -T Power-Transistor Product Summary V DS 100 V R DS on ,max (SMD version) 15.4 mΩ ID Features PG-TO263-3-2 • N-channel - Enhancement mode 50 PG-TO262-3-1 A PG-TO220-3-1 • Automotive AEC Q101 qualified


    Original     		PDF IPB50N10S3L-16 IPI50N10S3L-16, IPP50N10S3L-16 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 3N10L16 IPI50N10S3L-16 3N10L16 30025A DIODE smd marking Ag IPB50N10S3L-16 smd diode 949 SMD TRANSISTOR MARKING DD IPI50N10S3L-16 IPP50N10S3L-16 PG-TO263-3-2 DIODE smd marking v1

    3N10L16

    Abstract: DIODE smd marking v1 smd diode 949
    Text: IPB50N10S3L-16 IPI50N10S3L-16, IPP50N10S3L-16 OptiMOS -T Power-Transistor Product Summary V DS 100 V R DS on ,max (SMD version) 15.4 mΩ ID Features PG-TO263-3-2 • N-channel - Enhancement mode 50 PG-TO262-3-1 A PG-TO220-3-1 • Automotive AEC Q101 qualified


    Original     		PDF IPB50N10S3L-16 IPI50N10S3L-16, IPP50N10S3L-16 PG-TO262-3-1 PG-TO263-3-2 PG-TO220-3-1 IPI50N10S3L-16 PG-TO263-3-2 3N10L16 DIODE smd marking v1 smd diode 949

    4N03L15

    Abstract: DIODE smd marking Ag diode smd marking T2 ANPS071E IPB22N03S4L-15 IPI22N03S4L-15 IPP22N03S4L-15 PG-TO263-3-2
    Text: IPB22N03S4L-15 IPI22N03S4L-15, IPP22N03S4L-15 OptiMOS -T2 Power-Transistor Product Summary V DS 30 R DS on ,max (SMD version) 14.6 ID Features PG-TO263-3-2 • N-channel - Enhancement mode 22 PG-TO262-3-1 V mΩ A PG-TO220-3-1 • Automotive AEC Q101 qualified


    Original     		PDF IPB22N03S4L-15 IPI22N03S4L-15, IPP22N03S4L-15 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 4N03L15 IPI22N03S4L-15 4N03L15 DIODE smd marking Ag diode smd marking T2 ANPS071E IPB22N03S4L-15 IPI22N03S4L-15 IPP22N03S4L-15 PG-TO263-3-2

    ANPS071E

    Abstract: IPB25N06S3L-22 IPI25N06S3L-22 IPP25N06S3L-22 PG-TO263-3-2 3N06L22 3n06l
    Text: IPB25N06S3L-22 IPI25N06S3L-22, IPP25N06S3L-22 OptiMOS -T2 Power-Transistor Product Summary V DS 55 R DS on ,max (SMD version) 21.3 ID 25 V mΩ A Features • N-channel - Enhancement mode PG-TO263-3-2 • Automotive AEC Q101 qualified PG-TO262-3-1 PG-TO220-3-1


    Original     		PDF IPB25N06S3L-22 IPI25N06S3L-22, IPP25N06S3L-22 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 3N06L22 IPI25N06S3L-22 ANPS071E IPB25N06S3L-22 IPI25N06S3L-22 IPP25N06S3L-22 PG-TO263-3-2 3N06L22 3n06l

    3N0609

    Abstract: IPB77N06S3-09 IPI77N06S3-09 IPP77N06S3-09 PG-TO263-3-2 diode marking code 77 3N060 3n06
    Text: IPB77N06S3-09 IPI77N06S3-09, IPP77N06S3-09 OptiMOS -T2 Power-Transistor Product Summary V DS 55 V R DS on ,max (SMD version) 8.8 mΩ ID 77 A Features • N-channel - Enhancement mode PG-TO263-3-2 • Automotive AEC Q101 qualified PG-TO262-3-1 PG-TO220-3-1


    Original     		PDF IPB77N06S3-09 IPI77N06S3-09, IPP77N06S3-09 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 3N0609 IPI77N06S3-09 3N0609 IPB77N06S3-09 IPI77N06S3-09 IPP77N06S3-09 PG-TO263-3-2 diode marking code 77 3N060 3n06

    3N10L12

    Abstract: IPB70N10S3L-12 IPI70N10S3L-12 IPP70N10S3L-12 PG-TO263-3-2 DIODE smd marking v1 3N10L
    Text: IPB70N10S3L-12 IPI70N10S3L-12, IPP70N10S3L-12 OptiMOS -T Power-Transistor Product Summary Features V DS 100 V R DS on ,max (SMD version) 12 mΩ ID 70 A PG-TO263-3-2 • N-channel - Enhancement mode PG-TO262-3-1 PG-TO220-3-1 • Automotive AEC Q101 qualified


    Original     		PDF IPB70N10S3L-12 IPI70N10S3L-12, IPP70N10S3L-12 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 3N10L12 IPI70N10S3L-12 3N10L12 IPB70N10S3L-12 IPI70N10S3L-12 IPP70N10S3L-12 PG-TO263-3-2 DIODE smd marking v1 3N10L

    D63A

    Abstract: ANPS071E IPB80N06S3-05 IPI80N06S3-05 IPP80N06S3-05 PG-TO263-3-2
    Text: IPB80N06S3-05 IPI80N06S3-05, IPP80N06S3-05 OptiMOS -T2 Power-Transistor Product Summary V DS 55 V R DS on ,max (SMD version) 5.1 mΩ ID 80 A Features • N-channel - Enhancement mode PG-TO263-3-2 • Automotive AEC Q101 qualified PG-TO262-3-1 PG-TO220-3-1


    Original     		PDF IPB80N06S3-05 IPI80N06S3-05, IPP80N06S3-05 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 3N0605 IPI80N06S3-05 D63A ANPS071E IPB80N06S3-05 IPI80N06S3-05 IPP80N06S3-05 PG-TO263-3-2

    3N0406

    Abstract: IPP80N04S3-06 IPB80N04S3-06 IPI80N04S3-06 ANPS071E PG-TO263-3-2
    Text: IPB80N04S3-06 IPI80N04S3-06, IPP80N04S3-06 OptiMOS -T Power-Transistor Product Summary V DS 40 V R DS on ,max (SMD version) 5.4 mΩ ID 80 A Features • N-channel - Enhancement mode PG-TO263-3-2 • Automotive AEC Q101 qualified PG-TO262-3-1 PG-TO220-3-1


    Original     		PDF IPB80N04S3-06 IPI80N04S3-06, IPP80N04S3-06 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 3N0406 IPI80N04S3-06 3N0406 IPP80N04S3-06 IPB80N04S3-06 IPI80N04S3-06 ANPS071E PG-TO263-3-2