9RV3
Abstract: No abstract text available
Text: DS-VA-GT1000-eng August , 2014 Data Sheet Glass Tube Flowmeter Model GT1000 Model GT1020 Model GT1024 Variable Area Industrial Glass Tube, Variable Area Flowmeters Description The Brooks GT 1000 combines ruggedness and simplicity in design to provide a versatile
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DS-VA-GT1000-eng
GT1000
GT1020
GT1024
9RV3
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MT3809G
Abstract: DEK13
Text: Installation and Operation Manual X-VA-MT3809G-MT3810G-eng Part Number: 541B182AAG December, 2014 Models MT3809G & MT3810G Brooks Models MT3809G and MT3810G Metal Tube Variable Area Flowmeters Model MT3809G General Purpose Housing Model MT3809G Model MT3809G
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X-VA-MT3809G-MT3810G-eng
541B182AAG
MT3809G
MT3810G
MT3809G
DEK13
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K3G250-AY11-C2
Abstract: K3G310-BB49-02 engel
Text: EC centrifugal fans – RadiPac version 2014-06 RadiPac: Now even more efficient The line of radial plug fans with GreenTech EC motor technology already All RadiPacs listed in the catalogue exceed the tougher new minimum established in the market has been expanded further. Our new product
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Untitled
Abstract: No abstract text available
Text: Fans and drive concepts for rail technology version 2014-10 ebm-papst: Your highly competent partner in rail engineering Creating the ideal fan solution. Our advantage lies in the perfect interaction. The area of railways places particular requirements on a product. Fans developed uniquely for rail technology and for the specific field of application
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backward-curved
Abstract: Centrifugal fans backward curved M2D 068-BF
Text: version 2013-05 EC/AC centrifugal fans – RadiCal The engineer’s choice EC/AC centrifugal fans – RadiCal Impellers made of high-tech compound material with optimised flow con- This opens up entirely new possibilities for applications in ventilation and
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8889 UK
Abstract: No abstract text available
Text: Product Data Sheet July 2014 IP257, Rev EA Mobrey MSM400 Ultrasonic Suspended Solids Monitoring and Control System Continuous sludge discharge monitor for up to 50% suspended solids Choice of flanged pipeline sensors for in-line density measurement
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IP257,
MSM400
MSM400
8889 UK
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F9530
Abstract: 9533E IRF9530
Text: H a r r is IRF9530, IR F 9531 IRF 9532 IRF9533 , Avalanche Energy Rated P-Channel Power MOSFETs January 1 9 9 4 Package F e a tu re s T 0 -2 2 0 A B TOP VIEW • -10 A and -1 2 A, -8 0 V and -100V • ro S O N “ 0 .3 f i and 0 .4 ÎÏ • Single Pulse Avalanche Energy Rated
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IRF9530,
IRF9533
-100V
IRF9531,
IRF9532
IRF9533
IRF9532,
F9533
92CS-43327
F9530
9533E
IRF9530
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IRF9511
Abstract: No abstract text available
Text: H a r r is IRF9510, IRF9511 IRF 9512 IRF9513 , Avalanche Energy Rated P-Channel Power MOSFETs Ja n u a ry 1 9 9 4 Package F e a tu re s • T O -220A B -2.5A and -3.0A , -8 0 V and -100V TOP VIEW • rDS ON = 1 -2 0 and 1 .6 ÎÎ • Single Pulse Avalanche Energy Rated
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IRF9510,
IRF9511
IRF9513
-220A
-100V
IRF9511,
IRF9512
IRF9513
92CS-43275
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ABG10
Abstract: RXKB-1 rxme1 RXMH-2 CATALOGUE SK 63-1 E RXK026 RXTNF11 RXMH2 tr bc 337 rxma1
Text: Catalogue RK 85-18 E ASEA Edition 1 A p ril 1978 Reclosing relay type RAABA For lines with delayed overcurrent protection Two-shot reclosing • Intended to be used together with delayed ove: cu rre n t relay with a sta?:~ ing co n ta ci which gives the starting
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006-AH
RK851007
RXKH28
RXK026
RXTNF11
RK72-10E
ABG10
RXKB-1
rxme1
RXMH-2
CATALOGUE SK 63-1 E
RXMH2
tr bc 337
rxma1
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PED relay
Abstract: sn7451b PED relay 95
Text: O'IlNilN/Ti T he I n f i n i t e P o w e r o f I LIN Doc D ual P N R ot eripheral P ositive eco mmended DESCRIPTION 4 -1 AND 1990/91 for KEY Typical applications include high-speed logic buffers, pow er drivers, relay drivers, line drivers, and m emory drivers. The SG55451B/SG55461/
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SG55451B/SG75451B
SG55451B/SG55461/SG55471
SG75451B/SG75461/SG75471)
SN55451B/61/71
SN7451B/61/71)
20-pin
MIL-STD-883
75451BY
SG75461Y
SG75471Y
PED relay
sn7451b
PED relay 95
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n52a
Abstract: STVHD90FI STVHD90
Text: SGSTHOMSON STVHD90 STVHD90FI IL D N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V dss STVHD90 STVHD90FI 50 V 50 V R d S ofi 0.023 U 0.023 n Id 52 A 29 A . . . . . . AVALAN C H E RUG G EDN ESS TECHNO LO G Y 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C
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STVHD90
STVHD90FI
STVHD90/FI
n52a
STVHD90FI
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Untitled
Abstract: No abstract text available
Text: ASSESS? RFP25N06, RF1S25N06, RF1S25N06SM 25A, 60V, 0.047 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 25A, 60V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives opti
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RFP25N06,
RF1S25N06,
RF1S25N06SM
1e-30
04e-3
04e-6)
85e-3
77e-5)
35e-3
77e-6)
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AN9321
Abstract: No abstract text available
Text: in te r r ii RF1K49092 D ata S h e e t A u g u s t 19 99 3.SA/2.5A, 12V, 0.050/0.130 Ohm, Logic Level, Complementary LittleFET Power MOSFET This complementary power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits,
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RF1K49092
RF1K49092
AN9321
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Untitled
Abstract: No abstract text available
Text: J W S S em icon du cto r RFG45N06LE, RFP45N06LE, RF1S45N06LESM I Data Sheet April 1999 45A, 60V, 0.028 Ohm, ESD Rated, Logic Level N-Channel Power MOSFETs • 45A, 60V Formerly developmental type TA49177. • rDS ON = 0.028i2 • 2kV ESD Protected • Temperature Compensating PSPICE Model
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RFG45N06LE,
RFP45N06LE,
RF1S45N06LESM
TA49177.
028i2
TB334
94e-4
94e-7)
70e-3
17e-5)
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Untitled
Abstract: No abstract text available
Text: RFD16N03L, RFD16N03LSM Semiconductor April 1999 Data Sheet 16A, 30V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum
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RFD16N03L,
RFD16N03LSM
96e-9
1e-30
95e-4
92e-3
29e-5)
03e-3
45e-5)
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FP23N06L
Abstract: 23N06LE 23n06
Text: ? *3 2 £ RFP23N06LE, RF1S23N06LE, RF1S23N06LESM 23A, 60V, 0.065 Ohm, ESD Rated, Logic Level, N-Channel Power MOSFETs S e p te m b e r 1998 Features Description • 23A, 60V T hese are N -C hannel po w e r M O S F E T s m anufactured using the M eg aF E T process. T his process, w h ich uses feature
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RFP23N06LE,
RF1S23N06LE,
RF1S23N06LESM
TA49165.
99e-4
27e-2
73e-5)
10e-6)
33e-6)
34e-3
FP23N06L
23N06LE
23n06
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Untitled
Abstract: No abstract text available
Text: R F1K 49157 h a r r is S E M I C O N D U C T O R # fl f « f l % W fl # 6.3A, 30V, Avalanche Rated, Single N-Channel LittleFET Enhancement Mode Power MOSFET January 1997 Features Description • 6.3A, 30V The RF1K49157 Single N-Channel power MOSFET is manufactured using an advanced MegaFET process. This
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RF1K49157
1e-30
59e-4
87e-7)
08e-3
43e-3
57e-6)
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Untitled
Abstract: No abstract text available
Text: L IN Doc #: 55454 S G 55454B /S G 75454B Series T h e I n f i n i t e P o w e r K o f ( \ I I D ual S I n n o v a t i o n N P eripheral ot R P ositive-NOR ecommended for DESCRIPTION T he SG 55454B /SG 55464/SG 55474 (S G 75454B /SG 75464/SG 75474) series
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55454B
75454B
55464/SG
75464/SG
20-pin
SG75454BY
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IRF 850 mosfet
Abstract: 9150C
Text: 2 3 H A R R IRF9150 IRF9151 I S Avalanche Energy Rated P-Channel Power MOSFETs January 1994 Package Features T 0 -2 0 4 A E BOTTOM VIEW • -25A , -8 0 V and -1 0 0 V • r D S 0 N = 0.1 s o n DRAIN (FLANGE) SOURCE • Single Pulse Avalanche Energy Rated
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IRF9150
IRF9151
IRF9151
HESIRF9t50CFI
RF9250CF1
IHF9I50CF2
IRF 850 mosfet
9150C
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Untitled
Abstract: No abstract text available
Text: RF1K49156 HARRIS S E M I C O N D U C T O R 6.3A, 30V, Avalanche Rated, Logic Level, Single N-Channel LittleFET Enhancement Mode Power MOSFET January 1997 Description Features 6.3A, 30V The RF1K49156 Single N-Channel power MOSFET is man ufactured using an advanced MegaFET process. This pro
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RF1K49156
RF1K49156
25e-10
1e-30
25e-4
62e-3
03e-5)
85e-3
00e-6)
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Untitled
Abstract: No abstract text available
Text: 43 02 271 0 0 5 4 50 0 072 • ¡jy H A R R HAS 2N6851 I S Avalanche-Energy-Rated P-Channel Power MOSFETs A u g u st 1991 Package Features T 0 -2 0 5 A F BOTTOM VIEW • -4.0A, -200V • rDS on = ° - 8 0 fi SOURCE • Single Pulse Avalanche Energy Rated
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2N6851
-200V
2N6851
92CS-43314
00S4504
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Untitled
Abstract: No abstract text available
Text: RFF70N06 Semiconductor 25A, 60V, 0.025 Ohm, N-Channel Power MOSFET September 1998 Features Description • 25Af, 60V The RFF70N06 N-Channel power MOSFET is manufactured using the MegaFET process. This process, which uses fea ture sizes approaching those of LSI circuits gives optimum
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RFF70N06
RFF70N06
0-025i2
MIL-STD-750,
MIL-S-19500,
100ms;
500ms;
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Untitled
Abstract: No abstract text available
Text: HAJtms S RFD16N02L, RFD16N02LSM Semiconductor y 16A, 20V, 0.022É1, N-Channel, Logic Level, Power MOSFET May 1997 Features Description • 16A, 20V The RFD16N02L and RFD16N02LSM are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of
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RFD16N02L,
RFD16N02LSM
RFD16N02L
RFD16N02LSM
T0-252AA
330mm
EIA-481
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Untitled
Abstract: No abstract text available
Text: FSL234D, FSL234R h a frris S E M I C O N D U C T O R " M J a m • Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Package Features • 4A, 250V, rDS ON : 0.610£1 TO-205AF • Total Dose Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event
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FSL234D,
FSL234R
O-205AF
1-800-4-HARRIS
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