o2-a2
Abstract: Hitachi DSA00196
Text: HN29W8411 Series 84M AND type Flash Memory More than 21,074-sector 86,319,104-bit ADE-203-870A (Z) Preliminary Rev. 0.1 Mar. 31, 1998 Description The Hitachi HN29W8411 Series is a CMOS Flash Memory with AND type memory cells. It has fully automatic programming and erase capabilities with a single 3.3 V and 5 V power supply. The functions are
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HN29W8411
074-sector
104-bit)
ADE-203-870A
51vel
o2-a2
Hitachi DSA00196
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Hitachi Stacked package memory
Abstract: HN29W16814 SA Series HITEC 527 PD513 Hitachi DSA00196
Text: HN29W16814 Series 168M AND type Flash Memory More than 21,074-sector 86,319,104-bit x 2 ADE-203-943 (Z) Preliminary Rev. 0.0 Jul. 21, 1998 Description The Hitachi HN29W16814 Series is stacked 2 chips Hitachi 84-Mbit Flash memory (HN29W8411) that are CMOS Flash Memory with AND type memory cells. It has fully automatic programming and erase
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HN29W16814
074-sector
104-bit)
ADE-203-943
84-Mbit
HN29W8411)
HN29W8411
Hitachi Stacked package memory
SA Series
HITEC 527
PD513
Hitachi DSA00196
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Prestigio nobile 150
Abstract: diagram HANNSTAR j mv 4 Prestigio lad1 12vdc msi MOTHERBOARD SERVICE MANUAL LYNX SM 30 diagram HANNSTAR k mv diagram HANNSTAR k mv 4 IC25N040ATMR Insyde bios manual
Text: PRESTIGIO NOBILE 150 TECHNICAL SERVICE MANUAL Contents 1. Hardware Engineering Specification ………………………………………………………………………. 4 1.1 Introduction ………………………………………………………………………………………………………………… 4
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PC536
MAXIM1907)
82801DBM
W83L950D
PLL207-151
VT6105LOM
8089P
Prestigio nobile 150
diagram HANNSTAR j mv 4
Prestigio
lad1 12vdc
msi MOTHERBOARD SERVICE MANUAL
LYNX SM 30
diagram HANNSTAR k mv
diagram HANNSTAR k mv 4
IC25N040ATMR
Insyde bios manual
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diagram HANNSTAR k mv
Abstract: 8089P diagram HANNSTAR j mv 4 diagram HANNSTAR k mv 4 LF-H41S ALC101 diagram motherboard hannStar K MV USBHUB W83L950 hannstar j mv 1
Text: SERVICE MANUAL FOR 8089P BY: Ally.Yuan Repair Technology Research Department /EDVD Mar.2004 8089P N/B Maintenance Contents 1. Hardware Engineering Specification ………………………………………………………………………. 4 1.1 Introduction ………………………………………………………………………………………………………………… 4
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8089P
8089P
82801DBM
W83L950D
PLL207-151
VT6105LOM
diagram HANNSTAR k mv
diagram HANNSTAR j mv 4
diagram HANNSTAR k mv 4
LF-H41S
ALC101
diagram motherboard hannStar K MV
USBHUB
W83L950
hannstar j mv 1
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Untitled
Abstract: No abstract text available
Text: M58PR256J M58PR512J 256 Mbit or 512 Mbit x16, Multiple Bank, Multilevel, Burst 1.8 V supply Flash memories Features • Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O buffers – VPP = 9 V for fast program
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M58PR256J
M58PR512J
M58PR512JE96Z5E
M58PR512J
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48pin TSOP
Abstract: HN29W6411 O2-A2 200H HN29W6411TT-50 D512-D527
Text: HN29W6411 Series More than 16,057 sectors 67,824,768 bits CMOS AND Flash Memory (Mostly Good Memory) Preliminary Rev.0.7 March 28, 1996 Description The Hitachi HN29W6411 is a CMOS Flash Memory with AND type memory cells. It has fully automatic programming and erase capabilities with a single 3.3V power supply. The functions are controlled by
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HN29W6411
00Max
08Min
18max
20Max
94Max
48pin TSOP
O2-A2
200H
HN29W6411TT-50
D512-D527
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CR10
Abstract: M58PR001LE M58PR256LE M58PR512LE a*12864
Text: M58PR256LE M58PR512LE M58PR001LE 256-Mbit, 512-Mbit or 1-Gbit x 16, multiple bank, multilevel, burst 1.8 V supply Flash memories Features • Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O buffers – VPP = 9 V for fast program
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M58PR256LE
M58PR512LE
M58PR001LE
256-Mbit,
512-Mbit
CR10
M58PR001LE
M58PR256LE
a*12864
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abe 433
Abstract: HN29W6411ATT-50 Hitachi DSA00164
Text: HN29W6411A Series 64M AND type Flash Memory More than 16,057-sector 67,824,768-bit ADE-203-865DC (Z) Rev. 21.0 FebOct. 20, 19998 Description The Hitachi HN29W6411A Series is a CMOS Flash Memory with AND type memory cells. It has fully automatic programming and erase capabilities with a single 3.3 V and 5 V power supply. The functions are
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HN29W6411A
057-sector
768-bit)
ADE-203-865DC
abe 433
HN29W6411ATT-50
Hitachi DSA00164
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Hitachi DSA00174
Abstract: No abstract text available
Text: HN29W12814A Series 128M AND type Flash Memory More than 16,057-sector 67,824,768-bit x 2 ADE-203-944B (Z) Rev. 2.0 Feb. 20, 1999 Description The Hitachi HN29W12814A Series is stacked 2 chips Hitachi 64-Mbit Flash memory (HN29W6411A) that are CMOS Flash Memory with AND type memory cells. It has fully automatic programming and erase
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HN29W12814A
057-sector
768-bit)
ADE-203-944B
64-Mbit
HN29W6411A)
HN29W6411A
Hitachi DSA00174
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HITEC 527
Abstract: Hitachi DSA00164
Text: HN29W12814A Series 128M AND type Flash Memory More than 16,057-sector 67,824,768-bit x 2 ADE-203-944B (Z) Rev. 2.0 Feb. 20, 1999 Description The Hitachi HN29W12814A Series is stacked 2 chips Hitachi 64-Mbit Flash memory (HN29W6411A) that are CMOS Flash Memory with AND type memory cells. It has fully automatic programming and erase
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HN29W12814A
057-sector
768-bit)
ADE-203-944B
64-Mbit
HN29W6411A)
HN29W6411A
HITEC 527
Hitachi DSA00164
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Untitled
Abstract: No abstract text available
Text: 2GB, 4GB X64, SR, DR : 240-Pin DDR3 SDRAM UDIMM SDRAM DDR3 256M, 512M X 64 UDIMM PIN ASSIGNMENT 240-Pin UDIMM Features: • DDR3 functionality and operations supported as per component data sheet ROHS Complaint
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240-Pin
PC3-10600,
PC3-8500
DDR3-1066
DDR3-1333
256MX64)
512MX64)
8125us
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P46H
Abstract: TFBGA105
Text: M58PR256LE M58PR512LE M58PR001LE 256-Mbit, 512-Mbit or 1-Gbit x 16, multiple bank, multilevel, burst 1.8 V supply Flash memories Features • ■ ■ ■ ■ ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O buffers
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M58PR256LE
M58PR512LE
M58PR001LE
256-Mbit,
512-Mbit
P46H
TFBGA105
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abe 433
Abstract: HN29W6411ATT-50 200H Hitachi DSA00480
Text: HN29W6411A Series 64M AND type Flash Memory More than 16,057-sector 67,824,768-bit ADE-203-865D (Z) Rev. 2.0 Feb. 20, 1999 Description The Hitachi HN29W6411A Series is a CMOS Flash Memory with AND type memory cells. It has fully automatic programming and erase capabilities with a single 3.3 V and 5 V power supply. The functions are
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HN29W6411A
057-sector
768-bit)
ADE-203-865D
abe 433
HN29W6411ATT-50
200H
Hitachi DSA00480
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8 pin ic sdc 3733
Abstract: MITAC 8640 PU516 windows china tv kit STR power supply ps2 mouse diagram li-ion battery pack 14.8V RJ 49 CONNECTORS toshiba c850 PU515 SIEMENS BST h45 100
Text: SERVICE MANUAL FOR 8640 8640 BY: Dragon Jiang TESTING TESTING TECHNOLOGY TECHNOLOGY DEPARTMENT DEPARTMENT // TSSC TSSC Nov .2002 8640 N/B Maintenance Contents 1. Hardware Engineering Specification -1.1 Introduction -1.2 System Overview -1.3 System Hardware -1.4 Electrical Characteristic -
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SIS650/645DX
SIS962
3437S)
CB1410
map17
8 pin ic sdc 3733
MITAC 8640
PU516 windows
china tv kit STR power supply
ps2 mouse diagram
li-ion battery pack 14.8V
RJ 49 CONNECTORS
toshiba c850
PU515
SIEMENS BST h45 100
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Untitled
Abstract: No abstract text available
Text: HN29W6411 Series More than 16,057 sectors 67,824,768 bits CMOS AND Flash Memory (Mostly Good Memory) HITACHI Preliminary Rev.0.7 March 28, 1996 Description The Hitachi HN29W6411 is a CMOS Flash Memory with AND type memory cells. It has fully automatic programming and erase capabilities with a single 3.3V power supply. The functions are controlled by
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HN29W6411
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Untitled
Abstract: No abstract text available
Text: HN29W6411A Series 64M AND type Flash Memory More than 16,057-sector 67,824,768-bit HITACHI ADE-203-865C (Z) Rev. 1.0 Oct. 20, 1998 Description The Hitachi HN29W6411A Series is a CMOS Flash Memory with AND type memory cells. It has fully automatic programming and erase capabilities with a single 3.3 V and 5 V power supply. The functions are
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HN29W6411A
057-sector
768-bit)
ADE-203-865C
b1/06:
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PS224
Abstract: PS235 PS835 PD416 PS-224 PD86 pd46 PS815 PD215 PD816
Text: 41E D MIL ELECTRONICS INC blbmhM n000271 1 • ■«* 1.80 • K - “ S ttlA ■>* ^ IN lit A 1 WATTS O F ISOLATED O U TPU T POW ER • T A T r) 7 • POWER SUPPLY MODEL 1.00 - /' SINGLE O R DUAL O U TPU TS PRINTED C IR CU IT MOUNTING LESS THAN 3/4 CUBIC INCH
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ps870
ps880
ps890
ps8100
pd510
pd512
pd210
pd212
pd410
pd412
PS224
PS235
PS835
PD416
PS-224
PD86
pd46
PS815
PD215
PD816
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Untitled
Abstract: No abstract text available
Text: HN29W6411A Series 64M AND type Flash Memory More than 16,057-sector 67,824,768-bit HITACHI ADE-203-865D€ (Z) Rev. 21.0 FebQet. 20, 1999K Description The Hitachi HN29W6411A Series is a CMOS Flash Memory with AND type memory cells. It has fully automatic programming and erase capabilities with a single 3.3 V and 5 V power supply. The functions are
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HN29W6411A
057-sector
768-bit)
ADE-203-865D
1999K
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Untitled
Abstract: No abstract text available
Text: ELPAC ELEKS/ ELPAC CHPN b?E D 32^273^ 00005Ö4 POLYSTYRENE FILM-FOIL •iE PD Series ►B e st Temperature Stability ►Superior Dielectric Absorption ►Film-Foil For High Current Performance Characteristics Temperature Range: Dissipation Factor @ +25°C:
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100VDC,
forPD4L104*
PD4L124*
PD4L154*
PD4L184*
PD4L224*
PD4L274*
PD4L334*
PD4L394*
PD4L474*
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Untitled
Abstract: No abstract text available
Text: HN29W8411 Series 84M AND type Flash Memory More than 21,074-sector 86,319,104-bit HITACHI ADE-203-870A (Z) Preliminary, Rev. 0.1 March 31, 1998 Description The Hitachi HN29W8411 Series is a CMOS Flash Memory with AND type memory cells. It has fully automatic programming and erase capabilities with a single 3.3 V and 5 V power supply. The functions are
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OCR Scan
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PDF
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HN29W8411
074-sector
104-bit)
ADE-203-870A
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Untitled
Abstract: No abstract text available
Text: HN29W6411 Series 64M AND type Flash Memory More than 16,057-sector 67,824,768-bit HITACHI ADE-203-637E (Z) Rev. 5.0 Nov. 14, 1997 Description The Hitachi HN29W6411 Series is a CMOS Flash Memory with AND type memory cells. It has fully automatic programming and erase capabilities with a single 3.3 V and 5 V power supply. The functions are
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HN29W6411
057-sector
768-bit)
ADE-203-637E
TTP-48/40D)
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HN29W6411
Abstract: No abstract text available
Text: HN29W6411 Series More than 16,057 sectors 67,824,768 bits CMOS AND Flash Memory (Mostly Good Memory) HITACHI Preliminary Rev.0.7 March 28, 1996 Description The Hitachi HN29W6411 is a CMOS Flash Memory with AND type memory cells. It has fully automatic program m ing and erase capabilities with a single 3.3V pow er supply. The functions are controlled by
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HN29W6411
HN29W
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Untitled
Abstract: No abstract text available
Text: H N 2 9 W 1 2 8 1 4 A S e r ie s 128M AND type Flash Memory More than 16,057-sector 67,824,768-bit x 2 HITACHI ADE-203-944A (Z) Rev. 1.0 Dec. 18, 1998 Description The Hitachi HN29W12814A Series is stacked 2 chips Hitachi 64-Mbit Flash memory (HN29W6411A) that
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057-sector
768-bit)
ADE-203-944A
HN29W12814A
64-Mbit
HN29W6411A)
HN29W6411A
HN29W12814Aare
40815HITEC
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furuno
Abstract: No abstract text available
Text: H N 2 9 W 1 2 8 1 4 A S e rie s 128M AND type Flash Memory More than 16,057-sector 67,824,768-bit x 2 HITACHI ADE-203-944B (Z) Rev. 2.0 Feb. 20, 1999 Description The Hitachi HN29W12814A Series is stacked 2 chips Hitachi 64-Mbit Flash memory (HN29W6411A) that
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HN29W12814A
057-sector
768-bit)
ADE-203-944B
64-Mbit
HN29W6411A)
HN29W6411A
furuno
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