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    PD444 Price and Stock

    Central Semiconductor Corp CMPD4448 TR PBFREE

    DIODE GEN PURP 75V 250MA SOT23
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    DigiKey CMPD4448 TR PBFREE Reel 24,000 3,000
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    CMPD4448 TR PBFREE Cut Tape 4,045 1
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    CMPD4448 TR PBFREE Digi-Reel 1
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    Avnet Americas CMPD4448 TR PBFREE Reel 12,000
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    Mouser Electronics CMPD4448 TR PBFREE 6,435
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    New Advantage Corporation CMPD4448 TR PBFREE 30,000 1
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    L3 Harris Narda-Miteq PD4-440/880-300N

    POWER DIVIDER
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    Central Semiconductor Corp CMPD4448 BK PBFREE

    DIODE GEN PURP 75V 250MA SOT23
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    DigiKey CMPD4448 BK PBFREE Box 10,500
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    Avnet Americas CMPD4448 BK PBFREE Box 10,500
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    L3 Harris Narda-Miteq PD4-440/880-300N-R

    POWER DIVIDER
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    DigiKey PD4-440/880-300N-R Box
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    Central Semiconductor Corp CMPD4448 TR

    Diode Switching 100V 500mA 3-Pin SOT-23 T/R - Tape and Reel (Alt: CMPD4448 TR)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas CMPD4448 TR Reel 3,000 3,000
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    Find more PD444 price and stock on Findchips.com

    PD444 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µ PD4442162-Y, 4442182-Y, 4442322-Y, 4442362-Y 4M-BIT CMOS SYNCHRONOUS FAST SRAM PIPELINED OPERATION SINGLE CYCLE DESELECT Description The µPD4442162-Y is a 262,144-word by 16-bit, the µPD4442182-Y is a 262,144-word by 18-bit, µPD4442322-Y is


    Original     		PDF PD4442162-Y, 4442182-Y, 4442322-Y, 4442362-Y PD4442162-Y 144-word 16-bit, PD4442182-Y 18-bit,

    uPD444016LG5-A10Y-7JF-A

    Abstract: uPD444016LG5-A12Y-7JF-A uPD444016LG5-A8Y-7JF-A TSOP10 PD444016LG5-AxxY-7JF-A PD444016L-Y
    Text: データ・シート MOS 集積回路 MOS Integrated Circuit PD444016L-Y 4M ビット CMOS 高速スタティック RAM 256K ワードx16 ビット 動作温度拡張品 μPD444016L-Y は 4,194,304 ビット（262,144 ワード×16 ビット）の CMOS 高速スタティック RAM です。


    Original     		PDF PD444016L-Y /LBI/O1I/O8/UBI/O9I/O16 PD444016LG5-A8Y-7JF PD444016LG5-A10Y-7JF mm400 PD444016LG5-A12Y-7JF PD444016LG5-A8Y-7JF-A PD444016LG5-A10Y-7JF-A PD444016LG5-A12Y-7JF-A uPD444016LG5-A10Y-7JF-A uPD444016LG5-A12Y-7JF-A uPD444016LG5-A8Y-7JF-A TSOP10 PD444016LG5-AxxY-7JF-A PD444016L-Y

    M15502

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µ PD4442161-Y, 4442181-Y, 4442321-Y, 4442361-Y 4M-BIT CMOS SYNCHRONOUS FAST SRAM FLOW THROUGH OPERATION Description The µPD4442161-Y is a 262,144-word by 16-bit, the µPD4442181-Y is a 262,144-word by 18-bit, the µPD4442321-Y


    Original     		PDF PD4442161-Y, 4442181-Y, 4442321-Y, 4442361-Y PD4442161-Y 144-word 16-bit, PD4442181-Y 18-bit, M15502

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µ PD4442163-Y, 4442183-Y, 4442323-Y, 4442363-Y 4M-BIT CMOS SYNCHRONOUS FAST SRAM PIPELINED OPERATION DOUBLE CYCLE DESELECT Description The µPD4442163-Y is a 262,144-word by 16-bit, the µPD4442183-Y is a 262,144-word by 18-bit, µPD4442323-Y is


    Original     		PDF PD4442163-Y, 4442183-Y, 4442323-Y, 4442363-Y PD4442163-Y 144-word 16-bit, PD4442183-Y 18-bit,

    PD444016-Y

    Abstract: No abstract text available
    Text: データ・シート MOS 集積回路 MOS Integrated Circuit PD444016-Y 4M ビット CMOS 高速スタティック RAM 256K ワードx16 ビット 動作温度拡張品 μPD444016-Y は 4,194,304 ビット（262,144 ワード×16 ビット）の CMOS 高速スタティック RAM です。


    Original     		PDF PD444016-Y /LBI/O1I/O8/UBI/O9I/O16 PD444016G5-8Y-7JF PD444016G5-10Y-7JF mm400 PD444016G5-12Y-7JF PD444016G5-8Y-7JF-A PD444016G5-10Y-7JF-A PD444016G5-12Y-7JF-A PD444016-Y

    thermometer lm35 with 7segment

    Abstract: v850e2 dSMC rb40 bridge bridge rb60 kawasaki r142 DW7000 SD16CS BT31 ME200
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    PD23C64020

    Abstract: PD45D128442 4M84 PD45D128842 256M5 0443 IC PD23C64000AL 45V16A PD264 A80L
    Text: IC Memory CD-ROM IC Memory CD-ROM X13769XJ2V0CD00 04-1 IC Memory Dynamic RAM • Synchronous DRAM: SDR Single Data Rate , 256M bits (x4 bits organization) Density (bits) Organization (words × bits × banks) Part number 256M★ 16M×4×4 µ PD45256441 Speed


    Original     		PDF X13769XJ2V0CD00 A10BL 8K/64 256M5 PD45256441 54-pin PC133 PC100 MC-22000 PD23C64020 PD45D128442 4M84 PD45D128842 0443 IC PD23C64000AL 45V16A PD264 A80L

    TSOP10

    Abstract: 43A16
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


    Original     		PDF PD444016-Y /LBI/O1I/O8/UBI/O9I/O16 PD444016G5-8Y-7JF PD444016G5-7JF TSOP10 mm400 PD444016G5-7JF-A 43A16

    uPD444016LG5-A10Y-7JF-A

    Abstract: uPD444016LG5-A12Y-7JF-A uPD444016LG5-A8Y-7JF-A
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


    Original     		PDF PD444016L-Y /LBI/O1I/O8/UBI/O9I/O16 PD444016LG5-A8Y-7JF 210P10 mm400 PD444016LG5-7JF-A TSOP10 M15392JJ3V0DS uPD444016LG5-A10Y-7JF-A uPD444016LG5-A12Y-7JF-A uPD444016LG5-A8Y-7JF-A

    SAW30

    Abstract: V850E2 STB236 DW7000 m8512 p3098 TLR124 PD703111 dSMC U16794JJ3V0AN
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


    Original     		PDF V850E/ME2, V850E2/ME3 V850E/ME2 PD703111A PD703500 U16794JJ3V0AN003 U16794JJ3V0AN SAW30 V850E2 STB236 DW7000 m8512 p3098 TLR124 PD703111 dSMC U16794JJ3V0AN

    PD4300

    Abstract: No abstract text available
    Text: HIGH POWER DIVIDERS/COMBINERS FREQUENCY MHz INSERTION PHASE POWER LOSS BALANCE ISOLATION VSWR (Watts) (±dB, Max.) (±Deg. Max.) (dB, Min.) (Max.) (CW) MODEL NUMBER STANDARD CONNECTORS INPUT/OUTPUT OUTLINE 2-WAY DIVIDERS 0.16 – 0.32 0.225 – 0.40 0.32 – 0.60


    Original     		PDF PD2-160/320-200S PD2-225/400-200S PD2-320/600-200S PD2-640/1200-200S PD2-800/900-250N PD2-930/1250-200S PD2-1000/2000-200S PD2-1000/2000-500N PD2-1200/1400-200S PD2-1400/2300-200S PD4300

    transistor C3866

    Abstract: Zener PH SEC E13009 ups circuit schematic diagram 1000w E13007 2 E13007 C3866 power transistor texas ttl 74L505 Transistor C3246
    Text: BID CΚΤ DOLLY L IST L OGO LIST SA F E TY & RELIA ΒL TY ΤΕΚ PIN SYSTE M DIGITA L IC's MEMORIES, MOS CMOS .EC L , TT L MICR OP R OC E SSOR SPE CIA L FUN CTION IC's DIGITAL l LINE AR K ARR AYS LIN E A R IC's (PUR CH ) ΤΕΚ-MADE IC's IC's INDEX (COL ORE D PGS)


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET_ MOS INTEGRATED CIRCUIT A PD444016 4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT Description The ,PD444016 is a high speed, low power, 4,194,304 bits (262,144 words by 16 bits CMOS static RAM. Operating supply voltage is 5.0 V ± 0.5 V.


    OCR Scan     		PDF uPD444016 256K-WORD 16-BIT 44-pin PD444016LE-8 PD444016LE-10 PD444016LE-12

    UPD444

    Abstract: UPD444-1 MPD444
    Text: PD444 /¿PD444-1 /PD444-2 /PD444-3 ^ NEC NEC Electronics U.S.A. Inc. Microcomputer Division 1024 x 4-BIT STATIC CMOS RAM DESCRIPTION T h e /PD444 is a high-speed, lo w p o w e r s ilic o n gate C M OS 4 0 9 6 b it s ta tic R A M o rg a ­ n ize d 1 02 4 w o rd s b y 4 b its . I t uses DC stable s ta tic c ir c u itr y th ro u g h o u t and th e re ­


    OCR Scan     		PDF uPD444 uPD444-1 uPD444-2 uPD444-3 /LfPD444 LM27S2S DCH157M //PD42S18160, MPD444

    d44401

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT _ ¿ ¿ P D 4 4 4 0 1 0 L - X 4M-BIT CMOS STATIC RAM 512K-WORD BY 8-BIT EXTENDED TEMPERATURE OPERATION Description The ,PD444010L-X is a high speed, low power, 4,194,304 bits 524,288 words by 8 bits CMOS static RAM.


    OCR Scan     		PDF 512K-WORD uPD444010L-X 48-pin PD444010L-X PD444010L-X. UPD444010LGY-B 12x18 d44401

    Js SMD MARKING CODE SOT23

    Abstract: SMD MARKING CODE M 4 Diode smd diode A82 1N4148 diode SMD marking 46 sot-23 DIODE SMD MARKING 5C SOT23 DIODE marking CODE 28 sot-23 MARKING AAD marking A82 SOT-23 Diode smd code cm
    Text: SMD Switching Diodes TYPE NO. CA SE DESCRIPTION BAS28 BAS56 C L L 914 CLL2CJ03 CLL4150 CLL4448 CLL5001 CM PD914 C M P D IO O I C M P D IO O I A SO T -143 SO T -143 S O D -8 O SO D -8O S O D -8O S O D -8 O S O D -8 O SOT-23 SOT-23 SOT-23 C M P D IO O IS CM P02003


    OCR Scan     		PDF BAS28 BAS56 CLL914 CLL2CJ03 CLL4150 CLL4448 CLL5001 CMPD914 CMPD1001 CMPD1001A Js SMD MARKING CODE SOT23 SMD MARKING CODE M 4 Diode smd diode A82 1N4148 diode SMD marking 46 sot-23 DIODE SMD MARKING 5C SOT23 DIODE marking CODE 28 sot-23 MARKING AAD marking A82 SOT-23 Diode smd code cm

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET_ MOS INTEGRATED CIRCUIT _ ¿ ¿ P D 4 4 4 0 1 2 L - X 4M-BIT CMOS STATIC RAM 256K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION Description The ,PD444012L-X is a high speed, low power, 4,194,304 bits 262,144 words by 16 bits CMOS static RAM.


    OCR Scan     		PDF 256K-WORD 16-BIT uPD444012L-X 48-pin M13961EJ3V0DS00 PD444012L-X. juPD444012L-X PD444012LGY-BxxX-MJH:

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET_ MOS INTEGRATED CIRCUIT jU P D 4 4 4 0 1 6 L 4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT Description The ^¡PD444016L is a high speed, low power, 4,194,304 bits 262,144 words by 16 bits CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V.


    OCR Scan     		PDF 256K-WORD 16-BIT PD444016L 44-pin

    0829A

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT PD444004 4M-BIT CMOS FAST SRAM 1M-WORD BY 4-BIT Description The ,PD444004 is a high speed, low power, 4,194,304 bits 1,048,576 words by 4 bits CMOS static RAM. Operating supply voltage is 5.0 V ± 0.5 V. The ,PD444004 is packaged in a 32-pin plastic SOJ and 32-pin plastic TSOP (II).


    OCR Scan     		PDF jUPD444004 uPD444004 32-pin PD444004LE-10 PD444004LE-12 0829A

    T3D DIODE

    Abstract: T3D 45 diode diode T3D diode T3D 25 T3D 40 DIODE Diode T3D 08 T3D 18 diode T3D 77 diode Diode T3D 30 Diode T3D 35
    Text: S P RAG UE /S EM IC ON D GROUP 8 5 14019 SPRAGUE, D • S E M I C O N D S / ICS 0513550 0003b27 S 93 D 0 3 6 2 7 SMALL-OUTLINE DIODES i ‘TMPD’ General-Purpose and Low-Leakage Diodes ELECTRICAL CHARACTERISTICS at TA = 25°C VF Device Type »rr Max. ns


    OCR Scan     		PDF 0003b27 TMPD459 TMPD914 TMPD2835 TMPD2836 TMPD2837 TMPD2838 TMPD4148 TMPD4150 TMPD4153 T3D DIODE T3D 45 diode diode T3D diode T3D 25 T3D 40 DIODE Diode T3D 08 T3D 18 diode T3D 77 diode Diode T3D 30 Diode T3D 35

    BC5508

    Abstract: 6CW66 BC5588 BC8488 TRANSISTOR bc5508 1GW NPN 8C546 smd transistor marking 1gw 1gw transistor SMD Transistors 1gw
    Text: Selection Guide Page Small Signal Transistors 42 Small Signal MOSFETs 43 Junction FETs 44 Power Transistors 49 Switching Diodes 50 Schottky Diodes 51 Low Leakage Diodes 52 Stabistor Diodes 52 Zener Diodes 53 Transient Voltage Suppressors TVS 57 Current Limiting Diodes


    OCR Scan     		PDF OT-23 350mW CMPTB099 CMPT2222A trK1000V) CMPS5064 OT-23 OT-89 CQ89D CQ89M BC5508 6CW66 BC5588 BC8488 TRANSISTOR bc5508 1GW NPN 8C546 smd transistor marking 1gw 1gw transistor SMD Transistors 1gw

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT PD444008L 4M-BIT CMOS FAST SRAM 512K-WORD BY 8-BIT Description The ^¡PD444008L is a high speed, low power, 4,194,304 bits 524,288 words by 8 bits CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V.


    OCR Scan     		PDF juPD444008L 512K-WORD PD444008L 36-pin 44-pin PD444008LLE-A10 PD444008LLE-A12

    triac tag 8518

    Abstract: 70146 DS3654 X2864AD 7 segment display RL S5220 TC9160 la 4440 amplifier circuit diagram 300 watt philips ecg master replacement guide vtl 3829 A-C4 TCA965 equivalent
    Text: 1985 0 / 0 / CONTENTS VOLUME I Introduction to IC MASTER 3 Advertisers’ Index 8 Master Selection Guide Function Index I0 Part Number Index 40 Part Number Guide 300 Logo Guide 346 Application Note Directory 349 Military Parts Directory 50I Testing 506 Cross Reference


    OCR Scan     		PDF

    UPD444C

    Abstract: MPD444C PD444C MPD444 UPD444-1 upd444 nec nec 444 ram nec ram upd444c PD444 ram 2114L
    Text: PD444 /¿PD444-1 /PD444-2 /PD444-3 ^ NEC NEC Electronics U.S.A. Inc. Microcomputer Division 1024 x 4-BIT STATIC CMOS RAM DESCRIPTION The /PD444 is a high-speed, low power silicon gate CMOS 4096 b it static RAM orga­ nized 1024 words by 4 bits. It uses DC stable static circ u itry throug hou t and there­


    OCR Scan     		PDF uPD444 uPD444-1 uPD444-2 uPD444-3 /LfPD444 LM27S2S 001157M //PD42S18160, UPD444C MPD444C PD444C MPD444 upd444 nec nec 444 ram nec ram upd444c PD444 ram 2114L