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    UPD444016 Price and Stock

    NEC Electronics Group UPD444016LG5-A12-7JF

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics UPD444016LG5-A12-7JF 10 1
    • 1 $12
    • 10 $9
    • 100 $9
    • 1000 $9
    • 10000 $9
    		Buy Now
    Quest Components UPD444016LG5-A12-7JF 8
    • 1 $16
    • 10 $12
    • 100 $12
    • 1000 $12
    • 10000 $12
    		Buy Now

    NEC Electronics Group UPD444016LG5-A8-7JF

    STANDARD SRAM, 256KX16, 8NS, CMOS, PDSO44
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components UPD444016LG5-A8-7JF 396
    • 1 $14.22
    • 10 $14.22
    • 100 $14.22
    • 1000 $9.48
    • 10000 $9.48
    		Buy Now
    UPD444016LG5-A8-7JF 2
    • 1 $15.7
    • 10 $15.7
    • 100 $15.7
    • 1000 $15.7
    • 10000 $15.7
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    NEC Electronics Group UPD444016LLE-A12-A

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components UPD444016LLE-A12-A 253
    • 1 $14.706
    • 10 $14.706
    • 100 $14.706
    • 1000 $7.353
    • 10000 $7.353
    		Buy Now

    NEC Electronics Group UPD444016LG5-A12Y-7JF

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components UPD444016LG5-A12Y-7JF 64
    • 1 $13.392
    • 10 $11.904
    • 100 $11.0112
    • 1000 $11.0112
    • 10000 $11.0112
    		Buy Now

    Renesas Electronics Corporation UPD444016LG5-A8-7JF

    STANDARD SRAM, 256KX16, 8NS, CMOS, PDSO44
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components UPD444016LG5-A8-7JF 16
    • 1 $14.865
    • 10 $9.91
    • 100 $9.91
    • 1000 $9.91
    • 10000 $9.91
    		Buy Now
    Find more UPD444016 price and stock on Findchips.com

    UPD444016 Datasheets (39)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    UPD444016 NEC 4M-BIT CMOS FAST SRAM 256K-Word BY 16-BIT Original PDF
    UPD444016G5-10-7JF NEC 4M-bit(256K-word x 16-bit) Fast SRAM Original PDF
    uPD444016G5-10-7JF NEC 4 MBit CMOS Fast SRAM 256 kWord By 16 Bit Original PDF
    UPD444016G5-10Y-7JF NEC 4M-bit(256K-word x 16-bit) Fast SRAM Original PDF
    uPD444016G5-10Y-7JF NEC 4M-BIT CMOS FAST SRAM 256K-Word BY 16-BIT EXTENDED TEMPERATURE OPERATION Original PDF
    UPD444016G5-12-7JF NEC 4M-bit(256K-word x 16-bit) Fast SRAM Original PDF
    uPD444016G5-12-7JF NEC 4 MBit CMOS Fast SRAM 256 kWord By 16 Bit Original PDF
    UPD444016G5-12Y-7JF NEC 4M-bit(256K-word x 16-bit) Fast SRAM Original PDF
    uPD444016G5-12Y-7JF NEC 4M-BIT CMOS FAST SRAM 256K-Word BY 16-BIT EXTENDED TEMPERATURE OPERATION Original PDF
    UPD444016G5-8-7JF NEC 4M-bit(256K-word x 16-bit) Fast SRAM Original PDF
    uPD444016G5-8-7JF NEC 4 MBit CMOS Fast SRAM 256 kWord By 16 Bit Original PDF
    UPD444016G5-8Y-7JF NEC 4M-bit(256K-word x 16-bit) Fast SRAM Original PDF
    uPD444016G5-8Y-7JF NEC 4M-BIT CMOS FAST SRAM 256K-Word BY 16-BIT EXTENDED TEMPERATURE OPERATION Original PDF
    UPD444016L NEC 4M-BIT CMOS FAST SRAM 256K-Word BY 16-BIT Original PDF
    UPD444016LE-10 NEC 4M-bit(256K-word x 16-bit) Fast SRAM Original PDF
    uPD444016LE-10 NEC 4 MBit CMOS Fast SRAM 256 kWord By 16 Bit Original PDF
    UPD444016LE-12 NEC 4M-bit(256K-word x 16-bit) Fast SRAM Original PDF
    uPD444016LE-12 NEC 4 MBit CMOS Fast SRAM 256 kWord By 16 Bit Original PDF
    UPD444016LE-8 NEC 4M-bit(256K-word x 16-bit) Fast SRAM Original PDF
    uPD444016LE-8 NEC 4 MBit CMOS Fast SRAM 256 kWord By 16 Bit Original PDF

    UPD444016 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PD444016LG5-A8-7JF

    Abstract: PD444016LG5-A12-7
    Text: DATA SHEET MOS INTEGRATED CIRCUIT PD444016L 4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT Description The μPD444016L is a high speed, low power, 4,194,304 bits 262,144 words by 16 bits CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V. The μPD444016L is packaged in 44-pin plastic SOJ and 44-pin plastic TSOP (II).


    Original     		PDF PD444016L 256K-WORD 16-BIT PD444016L 44-pin I/O16) PD444016LLE-A8 PD444016LG5-A8-7JF PD444016LG5-A12-7

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT PD444016 4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT Description The μPD444016 is a high speed, low power, 4,194,304 bits 262,144 words by 16 bits CMOS static RAM. Operating supply voltage is 5.0 V ± 0.5 V. The μPD444016 is packaged in 44-pin plastic SOJ and 44-pin plastic TSOP (II).


    Original     		PDF PD444016 256K-WORD 16-BIT PD444016 44-pin I/O16) PD444016LE-8 PD444016LE-10ntrol

    uPD444016LG5-A8Y-7JF-A

    Abstract: 44-PIN uPD444016LG5-A10Y-7JF-A
    Text: DATA SHEET MOS INTEGRATED CIRCUIT PD444016L-Y 4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION Description The μPD444016L-Y is a high speed, low power, 4,194,304 bits 262,144 words by 16 bits CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V.


    Original     		PDF PD444016L-Y 256K-WORD 16-BIT PD444016L-Y 44-PIN I/O16) PD444016LG5-A8Y-7JF uPD444016LG5-A8Y-7JF-A uPD444016LG5-A10Y-7JF-A

    2sk2500

    Abstract: UPC1037HA UPC648C 2SK927 NEC 2SK2500 uPD5201G UPA64HA UPD6360C 2SH24 n13t1
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


    Original     		PDF C11178JJCV0IF0012 C11178JJCV0IF MIL-HDBK-217 MILMIL10100 MIL-HDBK-217Fit 2sk2500 UPC1037HA UPC648C 2SK927 NEC 2SK2500 uPD5201G UPA64HA UPD6360C 2SH24 n13t1

    thermometer lm35 with 7segment

    Abstract: v850e2 dSMC rb40 bridge bridge rb60 kawasaki r142 DW7000 SD16CS BT31 ME200
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    2SK2500

    Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
    Text: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: データ･シート MOS 集積回路 MOS Integrated Circuit PD444016L 4M ビット CMOS 高速スタティック RAM 256K ワードx16 ビット μPD444016L は 4,194,304 ビット（262,144 ワード×16 ビット）の CMOS 高速スタティック RAM です。


    Original     		PDF PD444016L /LBI/O1I/O8/UBI/O9I/O16 PD444016LLE-A8 PD444016LLE-A10 mm400 PD444016LLE-A12 PD444016LG5-A8-7JF PD444016LG5-A10-7JF

    AM 5888

    Abstract: SAMSUNG mcp Reliability SAMSUNG MCP PD23C32000A B12 nec diode cypress flash 370 SUNRISE TSOP 12 20 a85x E40/16/12 pd442
    Text: Through the latest technological advancements, we're developing new memory products to meet present and future needs. NEC Electronics is a market leader in memory products, continuously delivering products with the latest cutting-edge technology. Today, a new demand is


    Original     		PDF M16000EJEV0SG00 AM 5888 SAMSUNG mcp Reliability SAMSUNG MCP PD23C32000A B12 nec diode cypress flash 370 SUNRISE TSOP 12 20 a85x E40/16/12 pd442

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT PD444016L-Y 4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION Description The μPD444016L-Y is a high speed, low power, 4,194,304 bits 262,144 words by 16 bits CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V.


    Original     		PDF PD444016L-Y 256K-WORD 16-BIT PD444016L-Y 44-PIN I/O16) PD444016LG5-A8Y-7JF

    PD70F3447

    Abstract: uPD70F3187 uPD70F3447 board mk81 PD70F3347 PD70F3187 IF86 afcan V850E MK-92 mk102
    Text: User’s Manual TM V850E/PH2 32-Bit Single-Chip Microcontroller Hardware PD70F3187 μPD70F3447 Document No. U16580EE3V1UD00 Date Published January 2007 NEC Electronics Corporation 2007 Printed in Germany NOTES FOR CMOS DEVICES 1 VOLTAGE APPLICATION WAVEFORM AT INPUT PIN


    Original     		PDF V850E/PH2 32-Bit PD70F3187 PD70F3447 U16580EE3V1UD00 PD70F3447" U16580EE3V1UD00 PD70F3447 uPD70F3187 uPD70F3447 board mk81 PD70F3347 IF86 afcan V850E MK-92 mk102

    transistor NEC 2SK2500

    Abstract: NEC 2SK2500 2SK2500 N13T1 2SK2500 equivalent UPC1037HA UPC648C 2sh25 2sk2500 transistor 2SH24
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF MIL-HDBK-217 C11178EJCV0IF transistor NEC 2SK2500 NEC 2SK2500 2SK2500 N13T1 2SK2500 equivalent UPC1037HA UPC648C 2sh25 2sk2500 transistor 2SH24

    TSOP10

    Abstract: 43A16
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


    Original     		PDF PD444016-Y /LBI/O1I/O8/UBI/O9I/O16 PD444016G5-8Y-7JF PD444016G5-7JF TSOP10 mm400 PD444016G5-7JF-A 43A16

    uPD444016LG5-A10Y-7JF-A

    Abstract: uPD444016LG5-A12Y-7JF-A uPD444016LG5-A8Y-7JF-A TSOP10 PD444016LG5-AxxY-7JF-A PD444016L-Y
    Text: データ・シート MOS 集積回路 MOS Integrated Circuit PD444016L-Y 4M ビット CMOS 高速スタティック RAM 256K ワードx16 ビット 動作温度拡張品 μPD444016L-Y は 4,194,304 ビット（262,144 ワード×16 ビット）の CMOS 高速スタティック RAM です。


    Original     		PDF PD444016L-Y /LBI/O1I/O8/UBI/O9I/O16 PD444016LG5-A8Y-7JF PD444016LG5-A10Y-7JF mm400 PD444016LG5-A12Y-7JF PD444016LG5-A8Y-7JF-A PD444016LG5-A10Y-7JF-A PD444016LG5-A12Y-7JF-A uPD444016LG5-A10Y-7JF-A uPD444016LG5-A12Y-7JF-A uPD444016LG5-A8Y-7JF-A TSOP10 PD444016LG5-AxxY-7JF-A PD444016L-Y

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT PD444016L 4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT Description The μPD444016L is a high speed, low power, 4,194,304 bits 262,144 words by 16 bits CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V. The μPD444016L is packaged in 44-pin plastic SOJ and 44-pin plastic TSOP (II).


    Original     		PDF PD444016L 256K-WORD 16-BIT PD444016L 44-pin I/O16) PD444016LLE-A8 PD444016Lntrol

    uPD444016LG5-A10Y-7JF-A

    Abstract: uPD444016LG5-A12Y-7JF-A uPD444016LG5-A8Y-7JF-A
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


    Original     		PDF PD444016L-Y /LBI/O1I/O8/UBI/O9I/O16 PD444016LG5-A8Y-7JF 210P10 mm400 PD444016LG5-7JF-A TSOP10 M15392JJ3V0DS uPD444016LG5-A10Y-7JF-A uPD444016LG5-A12Y-7JF-A uPD444016LG5-A8Y-7JF-A

    Untitled

    Abstract: No abstract text available
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


    Original     		PDF PD444016L /LBI/O1I/O8/UBI/O9I/O16 PD444016LLE-A8 PD444016LLE-A SOJ10 mm400 PD444016LG5-7JF-A TSOP10

    PD444016-8

    Abstract: No abstract text available
    Text: データ･シート MOS 集積回路 MOS Integrated Circuit PD444016 4M ビット CMOS 高速スタティック RAM 256K ワードx16 ビット μPD444016 は 4,194,304 ビット（262,144 ワード×16 ビット）の CMOS 高速スタティック RAM です。


    Original     		PDF PD444016 /LBI/O1I/O8/UBI/O9I/O16 PD444016LE-8 PD444016LE-10 mm400 PD444016LE-12 PD444016G5-8-7JF PD444016G5-10-7JF PD444016-8

    A12Y

    Abstract: A10y nec ddr PD48288236 SUNRISE TSOP 12 20
    Text: December 2008 2008.12 NEC Electronics will develop much more new memory products to meet the customer needs by making use of the high technical capabilities accumulated through the long development experience in leading-edge memory products. NEC Electronics has been continuously dedicating the cutting-edge


    Original     		PDF G0706 M16000EJGV0SG00 A12Y A10y nec ddr PD48288236 SUNRISE TSOP 12 20

    M144

    Abstract: PD444016-8
    Text: DATA SHEET MOS INTEGRATED CIRCUIT PD444016 4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT Description The μPD444016 is a high speed, low power, 4,194,304 bits 262,144 words by 16 bits CMOS static RAM. Operating supply voltage is 5.0 V ± 0.5 V. The μPD444016 is packaged in 44-pin plastic SOJ and 44-pin plastic TSOP (II).


    Original     		PDF PD444016 256K-WORD 16-BIT PD444016 44-pin I/O16) PD444016LE-8 M144 PD444016-8

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT PD444016-Y 4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION Description The μPD444016-Y is a high speed, low power, 4,194,304 bits 262,144 words by 16 bits CMOS static RAM. Operating supply voltage is 5.0 V ± 0.5 V.


    Original     		PDF PD444016-Y 256K-WORD 16-BIT PD444016-Y 44-pin I/O16) PD444016G5-8Y-7JF

    UPD44164185F5-E60-EQ1

    Abstract: UPD44165362F5-E60-EQ1 UPD444016LG5-A12-7JF UPD4482161GF-A85 UPD44325094F5-E33-EQ2 uPD431232ALGF-A10 uPD431232ALGF-A12 uPD431232ALGF-A7 uPD431232ALGF-A8 uPD431532LGF-A10
    Text: NEC * - Tie down extra four I/Os with resistor uPD4382321GF-A85 GS880F32BT-7.5 + - Tie down extra two I/Os with resistor uPD4382321GF-A90 GS880F32BT-7.5 uPD4382322GF-A67 GS88032BT-200 UPD4311231LGF-A7 GS81032AT-5 uPD4382322GF-A75 GS88032BT-150 UPD4311231LGF-A8


    Original     		PDF uPD4382321GF-A85 GS880F32BT-7 uPD4382321GF-A90 uPD4382322GF-A67 GS88032BT-200 UPD4311231LGF-A7 GS81032AT-5 uPD4382322GF-A75 GS88032BT-150 UPD44164185F5-E60-EQ1 UPD44165362F5-E60-EQ1 UPD444016LG5-A12-7JF UPD4482161GF-A85 UPD44325094F5-E33-EQ2 uPD431232ALGF-A10 uPD431232ALGF-A12 uPD431232ALGF-A7 uPD431232ALGF-A8 uPD431532LGF-A10

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET_ MOS INTEGRATED CIRCUIT A PD444016 4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT Description The ,uPD444016 is a high speed, low power, 4,194,304 bits (262,144 words by 16 bits CMOS static RAM. Operating supply voltage is 5.0 V ± 0.5 V.


    OCR Scan     		PDF uPD444016 256K-WORD 16-BIT 44-pin PD444016LE-8 PD444016LE-10 PD444016LE-12

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET_ MOS INTEGRATED CIRCUIT jU P D 4 4 4 0 1 6 L 4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT Description The ^¡PD444016L is a high speed, low power, 4,194,304 bits 262,144 words by 16 bits CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V.


    OCR Scan     		PDF 256K-WORD 16-BIT PD444016L 44-pin