Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD4264160, 4265160 64 M-BIT DYNAMIC RAM 4 M-WORD BY 16-BIT, FAST PAGE MODE Description The µ PD4264160, 4265160 are 4,194,304 words by 16 bits dynamic CMOS RAMs. The fast page mode capability realize high speed access and low power consumption.
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PDF
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PD4264160,
16-BIT,
50-pin
PD4265160-A50
PD4264160-A60
PD4265160-A60
PD4265160-A70
PD4265160-A80
PD4264160-A80
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4265165
Abstract: 4265165G5 PD4264165 pd4265165
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD4264165, 4265165 64 M-BIT DYNAMIC RAM 4 M-WORD BY 16-BIT, HYPER PAGE MODE EDO , BYTE READ/WRITE MODE Description The µPD4264165, 4265165 are 4,194,304 words by 16 bits CMOS dynamic RAMs with optional hyper page mode
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Original
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PDF
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PD4264165,
16-BIT,
50-pin
PD4264165-A50
PD4265165-A50
PD4264165-A60
PD4265165-A60
4265165
4265165G5
PD4264165
pd4265165
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uPC2581
Abstract: uPC2002 2sd1557 uPA67C uPB582 upc1237 uPC317 2P4M PIN DIAGRAM 2SC4328 uPC157
Text: C&C for Human Potential Microcomputer 1 SEMICONDUCTOR SELECTION GUIDE GUIDE BOOK IC Memory 2 Semi-Custom IC 3 Particular Purpose IC 4 General Purpose Linear IC 5 Transistor / Diode / Thyristor 6 Microwave Device / Consumer Use High Frequency Device 7 Optical Device 8
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Original
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PDF
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PD7500
X10679EJAV0SG00
MF-1134)
1995P
uPC2581
uPC2002
2sd1557
uPA67C
uPB582
upc1237
uPC317
2P4M PIN DIAGRAM
2SC4328
uPC157
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Untitled
Abstract: No abstract text available
Text: NEC PD42641 4,194,304 x 1-Bit Silicon File NEC Electronics Inc. Description Pin Identification The ¿/PD42641 is a fast-page, low-power dynamic RAM organized as 4,194,304 words by 1 bit and designed to operate from a single +5-volt power supply. Advanced
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OCR Scan
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uPD42641
/PD42641
83CL-M868
lfefc-15
jiPD42641
JJPD42641
JUPD42641
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Untitled
Abstract: No abstract text available
Text: PD42641 4,194,304 x 1-Bit Silicon File NEC Electronics Inc. Prelim inary Information Pin Identification Description The /j PD42641 is a fast-page, low-power dynam ic RAM o rganized as 4,194,304 words by 1 bit and designed to o p e ra te from a single + 5 -v o lt power supply. Advanced
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pPD42641
PD42641
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UPD4265160-A60
Abstract: No abstract text available
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT PD4264160, 4265160 6 4 M -B IT D YN A M IC RAM 4 M -W O R D BY 16-BIT, FAST PAGE M O DE Description The /iPD 4264160,4265160 are 4,194,304 words by 16 bits CMOS dynamic RAMs. The fast page mode capability realize high speed access and low power consumption.
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OCR Scan
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PDF
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uPD4264160
uPD4265160
16-BIT,
50-prn
JPD4264160-A50
/PD4265160-A50
/PD4264160-A60
UPD4265160-A60
S50G5-80-7JF3
/iPD4264160,
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT NEC mP D 4264165, 4265165 64 M BIT DYNAMIC RAM 4 M-WORD BY 16-BIT, HYPER PAGE MODE, BYTE READ/WRITE MODE Description The PD4264165,4265165 are 4,194,304 words by 16 bits CMOS dynamic RAMs with optional hyper page mode.
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OCR Scan
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PDF
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16-BIT,
uPD4264165
uPD4265165
iPD4264165,
50-pin
HPD4264165-A60,
4266165-A50
426E16S-A60
HPD426416S-A70,
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT ¿¿PD 4264160, 4265160 64 M BIT DYNAMIC RAM 4M -W O R D BY 16-BIT, FAST PAGE MODE Description The /PD4264160, 4265160 are 4,194,304 words by 16 bits dynam ic CMOS RAMs. The fast page mode capability realize high speed access and low power consum ption.
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OCR Scan
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PDF
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16-BIT,
uPD4264160
uPD4265160
50-pin
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿ ¿ P D 4 2 6 4 16 0 , 4 2 6 5 16 0 64 M-BIT DYNAMIC RAM 4M -W O RD BY 16-BIT, FAST PAGE MODE Description The /iP D 426 416 0,4265160 are 4,194,304 words by 16 bits dynamic C MOS RAMs. The fast page mode capability
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OCR Scan
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PDF
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16-BIT,
50-pin
uPD4264160-A50
uPD4265160-A50
uPD4264160-A60
uPD4265160-A60
uPD4264160-A70
uPD4265160-A70
uPD4264160-A80
PD4265160-A80
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT iu P D 4 2 6 4 1 6 0 , 4 2 6 5 1 6 0 64 M-BIT DYNAMIC RAM 4 M-WORD BY 16-BIT, FAST PAGE MODE Description The ,PD426416 0 ,4 2 6 5 1 6 0 are 4,194,304 w ords by 16 bits dynam ic CMOS RAMs. The fast page mode capability
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OCR Scan
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PDF
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16-BIT,
uPD426416
50-pin
D4265160-A50
D4264160-A60
D4265160-A80
uPD4264160-A80
D4265160-A70
D4264cj
5-80-7JF3
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uPD4265160
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿¿PD4264160, 4265160 64 M-BIT DYNAMIC RAM 4 M-WORD BY 16-BIT, FAST PAGE MODE D escrip tio n The /PD4264160,4265160 are 4,194,304 words by 16 bits dynamic CMOS RAMs. The fast page mode capability realize high speed access and low power consumption.
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OCR Scan
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PDF
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uPD4264160
uPD4265160
16-BIT,
/iPD4264160
50-pin
/iPD4264160-A50
PD4265160-A50
/xPD4264160-A60
/jPD4265160-A60
juPD4264160-A70
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iaa 180
Abstract: No abstract text available
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / ¿ ¿ P D 426 416 0 , 4 2 6 5 16 0 64 M-BIT DYNAMIC RAM 4 M-WORD BY 16-BIT, FAST PAGE MODE D e s c rip tio n ThefiP D 4264160,4265160 are 4,194,304 words by 16 bits CMOS dynamic RAMs. The fast page mode capability
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OCR Scan
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PDF
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16-BIT,
50-pin
uPD4264160-A
uPD4265160-A50
uPD4264160A60
uPD4265160A60
S50G5-80-7JF3
PP4264160,
PD4264160,
PD4264160G5-7JF,
iaa 180
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4265165G5
Abstract: Oil 00037
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT IMEC PD4264165,4265165 64 M BIT DYNAMIC RAM 4 M-WORD BY 16-BIT, HYPER PAGE MODE, BYTE READ/WRITE MODE Description The PD4264165,4265165 are 4,194,304 words by 16 bits CMOS dynamic RAMs with optional hyper page mode.
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OCR Scan
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PDF
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16-BIT,
uPD4264165
uPD4265165
iPD4264165,
50-pin
IPD4264165-A50,
4265165-AS0
HPD4264165-A60,
426S165-A60
HPD4264165-A70,
4265165G5
Oil 00037
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿¿PD4264160, 4265160 64 M BIT DYNAMIC RAM 4M-W ORD BY 16-BIT, FAST PAGE MODE Description The /PD4264160, 4265160 are 4,194,304 words by 16 bits dynam ic CMOS RAMs. The fast page mode capability realize high speed access and low power consum ption.
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OCR Scan
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PDF
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PD4264160,
16-BIT,
/iPD4264160,
50-pin
265160-A
264160-A
S50G5-80-7JF3
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83CL-8867A
Abstract: No abstract text available
Text: JTV "* JL W NEC Electronics Inc. Pin Identification The PD42641 is a fast-page, low-power dynamic RAM organized as 4,194,304 words by 1 bit and designed to operate from a single +5-volt power supply. Advanced polycide technology minimizes silicon area and pro
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OCR Scan
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PDF
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uPD42641
fiPD42641
PPD42641
83CL-8867A
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BIPD
Abstract: No abstract text available
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / ffP P 4264165, 4265165 64 M-BIT DYNAMIC RAM 4 M-WORD BY 16-BIT, HYPER PAQE MODE EDO , BYTE READ/WRITE MODE D escription The /PD4264165,4265165 are 4,194,304 words by 16 bits CMOS dynamic RAMs with optional hyper page mode
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OCR Scan
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PDF
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16-BIT,
uPD4264165
50-pin
jjPD4264165-A50
jjPD4265165-A50
/jPD426416S-A60
iPD4265165-A60
-60-7JF
PD4264165,
426St65
BIPD
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