4265165
Abstract: 4265165G5 PD4264165 pd4265165
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD4264165, 4265165 64 M-BIT DYNAMIC RAM 4 M-WORD BY 16-BIT, HYPER PAGE MODE EDO , BYTE READ/WRITE MODE Description The µPD4264165, 4265165 are 4,194,304 words by 16 bits CMOS dynamic RAMs with optional hyper page mode
|
Original
|
PDF
|
PD4264165,
16-BIT,
50-pin
PD4264165-A50
PD4265165-A50
PD4264165-A60
PD4265165-A60
4265165
4265165G5
PD4264165
pd4265165
|
4265165
Abstract: PD4265 pd4265165
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD42S65165, 4265165 64 M-BIT DYNAMIC RAM 4 M-WORD BY 16-BIT, EDO, BYTE READ/WRITE MODE Description The µPD42S65165, 4265165 are 4,194,304 words by 16 bits CMOS dynamic RAMs with optional EDO. EDO is a kind of the page mode and is useful for the read operation.
|
Original
|
PDF
|
PD42S65165,
16-BIT,
PD42S65165
50-pin
PD42S65165-A50,
4265165-A50
4265165
PD4265
pd4265165
|
Untitled
Abstract: No abstract text available
Text: DATA SH EE T_ MOS INTEGRATED CIRCUIT MC-424LFC72 3.3 V OPERATION 4M-WORD BY 72-BIT DYNAMIC RAM MODULE BUFFERED TYPE, EDO Description The MC-424LFC72FY and M C-424LFC72FW are 4,194,304 words by 72 bits dynamic RAM modules on which 5
|
OCR Scan
|
PDF
|
MC-424LFC72
72-BIT
MC-424LFC72FY
C-424LFC72FW
uPD4265165
uPD4216405L
|
Untitled
Abstract: No abstract text available
Text: DATA S H EE T_ MOS INTEGRATED CIRCUIT MC-424LFG641 3.3 V OPERATION 4M-WORD BY 64-BIT DYNAMIC RAM MODULE UNBUFFERED TYPE, EDO Description The MC-424LFG641F and M C-424LFG641FW are a 4,194,304 words by 64 bits dynam ic RAM modules on which
|
OCR Scan
|
PDF
|
MC-424LFG641
64-BIT
MC-424LFG641F
C-424LFG641FW
uPD4216405L
uPD4265165
|
4265165
Abstract: No abstract text available
Text: DATA SHEET NEC/ MOS INTEGRATED CIRCUIT / ¿ /P D 4 2 S 6 5 1 6 5 , 4 2 6 5 1 6 5 64 M-BIT DYNAMIC RAM 4 M-WORD BY 16-BIT, EDO, BYTE READ/WRITE MODE Description The J/PD42S65165, 4265165 are 4,194,304 words by 16 bits CMOS dynamic RAMs with optional EDO. EDO is a kind ot the page mode and is useful for the read operation.
|
OCR Scan
|
PDF
|
16-BIT,
uPD42S65165
uPD4265165
jiPD42S65165
50-pin
S50G5-60-7JF3
MPP42S65165,
PD42S65165,
PD42S65165G5-7JF,
4265165G5-7JF:
4265165
|
Untitled
Abstract: No abstract text available
Text: DATA S H EE T_ MOS INTEGRATED CIRCUIT MC-424LFC721 3.3 V OPERATION 4M-WORD BY 72-BIT DYNAMIC RAM MODULE UNBUFFERED TYPE, EDO Description The MC-424LFC721F and M C-424LFC721FW are a 4,194,304 words by 72 bits dynamic RAM modules on which
|
OCR Scan
|
PDF
|
MC-424LFC721
72-BIT
MC-424LFC721F
C-424LFC721FW
uPD4216405L
uPD4265165
|
4265165G5
Abstract: Oil 00037
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT IMEC juPD4264165,4265165 64 M BIT DYNAMIC RAM 4 M-WORD BY 16-BIT, HYPER PAGE MODE, BYTE READ/WRITE MODE Description The pPD4264165,4265165 are 4,194,304 words by 16 bits CMOS dynamic RAMs with optional hyper page mode.
|
OCR Scan
|
PDF
|
16-BIT,
uPD4264165
uPD4265165
iPD4264165,
50-pin
IPD4264165-A50,
4265165-AS0
HPD4264165-A60,
426S165-A60
HPD4264165-A70,
4265165G5
Oil 00037
|
Untitled
Abstract: No abstract text available
Text: DATA SH EE T_ MOS INTEGRATED CIRCUIT MC-424LFC72 3.3 V OPERATION 4M-WORD BY 72-BIT DYNAMIC RAM MODULE BUFFERED TYPE, EDO Description The MC-424LFC72 is a 4,194,304 words by 72 bits dynamic RAM modules on which 5 pieces of 64 M DRAM
|
OCR Scan
|
PDF
|
MC-424LFC72
72-BIT
MC-424LFC72
PD4265165)
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT jU P D 4 2 S 6 5 1 6 5 , 4 2 6 5 16 5 64 M-BIT DYNAMIC RAM 4 M-WORD BY 16-BIT, EDO, BYTE READ/WRITE MODE Description The ¿¡PD42S65165, 4265165 are 4,194,304 w ords by 16 bits CMOS dynam ic RAMs with optional EDO. EDO is a kind of the page mode and is useful for the read operation.
|
OCR Scan
|
PDF
|
16-BIT,
PD42S65165,
PD42S65165
50-pin
S50G5-80-7JF3
PD42S65165G5-7JF,
4265165G
|
d4265165
Abstract: D4265165G 65A50
Text: DATA SHEET jU PD 42S 65165, 4265165 MOS INTEGRATED CIRCUIT 64 M-BIT DYNAMIC RAM 4 M-WORD BY 16-BIT, EDO, BYTE READ/WRITE MODE Description The ¿¿PD42S65165, 4265165 are 4,194,304 w ords by 16 bits CMOS dynam ic RAMs with optional EDO. EDO is a kind of the page mode and is useful for the read operation.
|
OCR Scan
|
PDF
|
16-BIT,
uPD42S65165
uPD4265165
PD42S65165
50-pin
d4265165
D4265165G
65A50
|
SI HV5
Abstract: No abstract text available
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / ¿ ¿ P D 4 2 6 4 16 5 , 4 2 6 5 16 5 64 M-BIT DYNAMIC RAM 4 M-WORD BY 16-BIT, HYPER PAGE MODE EDO , BYTE READA/VRITE MODE Description T h e;/P D 426 416 5, 4265165 are 4,194.304 w ords by 16 bits C M OS dynam ic RAMs with optional h yper page mode
|
OCR Scan
|
PDF
|
16-BIT,
50-pin
uPD4264165-A50
uPD4265165-A50
uPD4264165-A60
uPD4265165-A60
S50GS-80-7JF3
PD4264165,
iPD4264165G5-7JF,
65165G
SI HV5
|
S8430
Abstract: No abstract text available
Text: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-424LFC72 3.3 V OPERATION 4M-WORD BY 72-BIT DYNAMIC RAM MODULE BUFFERED TYPE, EDO Description The M C-424LFC72FY and M C-424LFC72FW are 4,194,304 words by 72 bits dynamic RAM modules on which 5
|
OCR Scan
|
PDF
|
MC-424LFC72
72-BIT
C-424LFC72FY
C-424LFC72FW
uPD4265165
/iPD4265165)
PD4216405L)
S8430
|
BIPD
Abstract: No abstract text available
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / ffP P 4264165, 4265165 64 M-BIT DYNAMIC RAM 4 M-WORD BY 16-BIT, HYPER PAQE MODE EDO , BYTE READ/WRITE MODE D escription The /iPD4264165,4265165 are 4,194,304 words by 16 bits CMOS dynamic RAMs with optional hyper page mode
|
OCR Scan
|
PDF
|
16-BIT,
uPD4264165
50-pin
jjPD4264165-A50
jjPD4265165-A50
/jPD426416S-A60
iPD4265165-A60
-60-7JF
PD4264165,
426St65
BIPD
|