UPD23C8001E
Abstract: uPD23C8001EJ
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD23C8001EJ 8M-BIT MASK-PROGRAMMABLE ROM 1M-WORD BY 8-BIT Description The µPD23C8001EJ is a 8,388,608 bits 1,048,576 words by 8 bits mask-programmable ROM. The active levels of OE (Output Enable Input) can be selected with mask-option.
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PD23C8001EJ
PD23C8001EJ
32-pin
PD23C8001EJCZ-XXX
PD23C8001EJGW-XXX
UPD23C8001E
uPD23C8001EJ
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uPC2581
Abstract: uPC2002 2sd1557 uPA67C uPB582 upc1237 uPC317 2P4M PIN DIAGRAM 2SC4328 uPC157
Text: C&C for Human Potential Microcomputer 1 SEMICONDUCTOR SELECTION GUIDE GUIDE BOOK IC Memory 2 Semi-Custom IC 3 Particular Purpose IC 4 General Purpose Linear IC 5 Transistor / Diode / Thyristor 6 Microwave Device / Consumer Use High Frequency Device 7 Optical Device 8
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PD7500
X10679EJAV0SG00
MF-1134)
1995P
uPC2581
uPC2002
2sd1557
uPA67C
uPB582
upc1237
uPC317
2P4M PIN DIAGRAM
2SC4328
uPC157
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT PD23C8001 EJ 8M-BIT MASK-PROGRAMMABLE ROM 1M-WORD BY 8-BIT Description The ¿¡PD23C8001 EJ is a 8,388,608 bits 1,048,576 w ords by 8 bits m ask-program m able ROM. The active levels of OE (O utput Enable Input) can be selected with m ask-option.
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juPD23C8001
PD23C8001
32-pin
PD23C8001EJCZ-XXX
PD23C8001EJGW
52eter
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Untitled
Abstract: No abstract text available
Text: DATA SH EE T_ MOS INTEGRATED CIRCUIT /PD23C8001 EJ 8M-BIT MASK-PROGRAMMABLE ROM 1M-WORD BY 8-BIT Description The ,PD23C8001 EJ is a 8,388,608 bits 1,048,576 words by 8 bits mask-programm able ROM. The active levels of OE (Output Enable Input) can be selected with mask-option.
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OCR Scan
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PDF
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/iPD23C8001
uPD23C8001
32-pin
PD23C8001EJGW
uPD23C8001EJGU-9JH
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT ¿¿PD23C8001EJ 8M-BIT MASK-PROGRAMMABLE ROM 1M-WORD BY 8-BIT Description The /PD23C8001 EJ is a 8,388,608 bits 1,048,576 w ords by 8 bits m ask-program m able ROM. The active levels of OE (Output Enable Input) can be selected with m ask-option.
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OCR Scan
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PDF
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uPD23C8001EJ
/XPD23C8001
PD23C8001
32-pin
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Untitled
Abstract: No abstract text available
Text: PD23C8001E 1,048,576 x 8-Bit Mask-Programmable CMOS ROM NEC NEC Electronics Inc. Description Pin Configuration The PD23C8001E is a 1,084,576-word by 8-bit ROM fabricated with CMOS siiicon-gate technology and designed to operate from a single + 5-volt power
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fiPD23C8001E
pPD23C8001E
576-word
32-pin
JJPD23C8001E
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41C464
Abstract: 41C1000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100
Text: MEM ORY ICs CRO SS REFERENCE GUIDE 3. C R O SS REFERENCE GUIDE 3.1 DRAM Density 25 6 K Org. X 1 X 4 1M X 1 X 4 4M X 1 X 4 x8 16M M ode Sa m su n g F. Page KM 41C256 TC 51256 N ibble KM 41C257 TC 51257 S. C o lu m n KM 41C258 TC 51258 H M 51 258 MB81258 F. Page
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41C256
41C257
41C258
41C464
41C466
41C1000
41C1002
44C256
44C258
41C4000
TC55B8128
424170 NEC
CY70199
44C1000
IOT7164
HN62308BP
HN62404P
TC5116100
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A10O
Abstract: No abstract text available
Text: DATA SHEET_ MOS INTEGRATED CIRCUIT PD23C8001 EJ 8M-BIT MASK-PROGRAMMABLE ROM 1M-WORD BY 8-BIT Description The ,PD23C8001 EJ is a 8,388,608 bits 1,048,576 words by 8 bits mask-programm able ROM. The active levels of OE (Output Enable Input) can be selected with mask-option.
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OCR Scan
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juPD23C8001
uPD23C8001
32-pin
A10O
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al 232 nec
Abstract: TC55B4257 MB832001 NM9306 eeprom Cross Reference D41264 TC5116100 HN28C256 NM9307 oki cross reference
Text: CROSS REFERENCE GUIDE MEMORY ICs CROSS REFERENCE GUIDE 1 .DRAM Density 256K Org. X1 x4 1M x1 X4 4M X1 x4 Mode Toshiba Hitachi Fujitsu NEC Oki MSM51C256 F.Page KM41C256 TC51256 HM51256 MB81256 Nibble KM41C257 TC51257 — MB81257 — S. Column KM41C258 TC51258
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KM41C256
KM41C257
KM41C258
KM41C464
KM41C466
KM41C1000
KM41C1001
KM41C1002
KM44C256
KM44C258
al 232 nec
TC55B4257
MB832001
NM9306
eeprom Cross Reference
D41264
TC5116100
HN28C256
NM9307
oki cross reference
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