Untitled
Abstract: No abstract text available
Text: PHOTONIC High Speed Silicon Photodiode, Photoconductive chip on submount Type PDB-C116A DETECTORS INC. PACKAGE DIMENSIONS INCH [mm] METALIZATION THIS SIDE C L .040 [1.02] .060 [1.52] PD I CL .030 [0.76] ANODE METALIZATION CATHODE METALIZATION PHOTODIODE .080 [2.03]
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PDB-C116A
PDB-C116A
100-PDB-C116A
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Untitled
Abstract: No abstract text available
Text: PHOTONIC High Speed Silicon Photodiode, Photoconductive chip on submount Type PDB-C116A DETECTORS INC. PACKAGE DIMENSIONS INCH [mm] .060 [1.52] PD CL .030 [0.76] I METALIZATION THIS SIDE C L .040 [1.02] ANODE METALIZATION CATHODE METALIZATION PHOTODIODE .080 [2.03]
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PDB-C116A
100-PDB-C116A
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Photodiode cost sheet
Abstract: die-attach cl 1100 optical fiber detector photoconductive Photodiode submount submount PD submount
Text: PHOTONIC High Speed Silicon Photodiode, Photoconductive chip on submount Type PDB-C116 DETECTORS INC. PACKAGE DIMENSIONS INCH [mm] METALIZATION THIS SIDE C L .040 [1.02] .060 [1.52] PD I CL .030 [0.76] NOTE: PHOTODIODE CHIP TO BE EUTECTICALLY DIE ATTACHED TO SUBMOUNT CERAMIC
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PDB-C116
PDB-C116
100-PDB-C116
Photodiode cost sheet
die-attach
cl 1100
optical fiber detector photoconductive
Photodiode submount
submount
PD submount
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InGaas PIN photodiode chip
Abstract: datasheets for photodiode chips
Text: Optical Monitoring Photodiode Chip KIP-M25-1 Description KIP-M25-1 is InGaAs PIN Photodiode chip with □250 um active square. It is recommended for optical data communication and power monitoring. Features Front illuminated planar PIN-PD Low capacitance and low dark current
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KIP-M25-1
KIP-M25-1
InGaas PIN photodiode chip
datasheets for photodiode chips
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InGaas PIN photodiode chip
Abstract: for photodiode chips KIP-107-1 pin InGaAs chip 1071 cp
Text: 1.25G InGaAs PIN Photodiode Chip KIP-107-1 Description KIP-107-1 is InGaAs PIN Photodiode chip with Ø75um active diameter. It is recommended for optical data communication with high sensitivity. Features Front illuminated planar PIN-PD Low capacitance and low dark current
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KIP-107-1
KIP-107-1
-40hange
250x250
InGaas PIN photodiode chip
for photodiode chips
pin InGaAs chip
1071 cp
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KIP-M1M
Abstract: InGaas PIN photodiode chip
Text: Optical Monitoring Photodiode Chip for KIP-MxM KIP-MxM Description KIP-MxM-1 is InGaAs PIN Photodiode chip with BIG size active diameter Ø1.0mm,Ø2.0mm,Ø3.0mm . It is recommended for Laser diode life test and optical power monitoring. Features Front illuminated planar PIN-PD
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InGaas PIN photodiode chip
Abstract: for photodiode chips KIP-205-1
Text: 2.5 Gbps InGaAs PIN Photodiode Chip KIP-205-1 Description KIP-205-1 is InGaAs PIN Photodiode chip with Ø50 um active diameter. It is recommended for optical data communication with high sensitivity. Features Front illuminated planar PIN-PD Low capacitance and low dark current
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KIP-205-1
KIP-205-1
250x250
InGaas PIN photodiode chip
for photodiode chips
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Untitled
Abstract: No abstract text available
Text: V ishay I ntertechnolog y, I nc . AND TEC I INNOVAT O L OGY Using Thin Film Substrates N HN DIODE SUBMOUNT CAPABILITIES O 19 62-2012 Resistors - Vishay Electro-Films LED Submounts INTRODUCTION Vishay Electro-Films, with its complete in-house capability, offers a wide variety of solutions for
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9001/2000-registered
VMN-PL0400-1204
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XML-365-SD
Abstract: No abstract text available
Text: XML-365-SD TECHNICAL DATA UV LED Array, SMD XML-365-SD is an ultra high power multi emitter LED array, utilizing 25 LED chip dies on a ceramic SMD submount and UV resistant silicone resin lens. It complies with RoHS directive Drawing & electrical layout dimensions in mm
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XML-365-SD
XML-365-SD
300mA,
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XML-385-SD
Abstract: No abstract text available
Text: XML-385-SD TECHNICAL DATA UV LED Array, SMD XML-385-SD is an ultra high power multi emitter LED array, utilizing 25 LED chip dies on a ceramic SMD submount and UV resistant silicone resin lens. It complies with RoHS directive Drawing & electrical layout dimensions in mm
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XML-385-SD
XML-385-SD
300mA,
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XHL-375-SD
Abstract: No abstract text available
Text: XHL-375-SD TECHNICAL DATA UV LED Array, SMD XML-375-SD is a high power multi emitter LED, utilizing 4 high power LED chip dies on a ceramic SMD submount. It complies with RoHS directive. Specifications • • Structure: GaN Peak Wavelength: 375 - 380 nm Optical Output Power: typ. 95 mW
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XHL-375-SD
XML-375-SD
XHL-375-SD
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650nm 50mw
Abstract: 780nm 5MW infrared laser diodes photo magneto electric camera hitachi HL6738 laser diode DVD 780nm 10mW laser diodes Hitachi DSAUTAZ005 ld261 PO40
Text: ADE-508-011C Information and Industry Laser Diodes Information and Industry Laser Diodes Application Note Publication Date: 1st Edition, June 1996 4th Edition, February 1999 Published by: Electronic Devices Sales & Marketing Group Semiconductor & Integrated Circuits
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ADE-508-011C
HL8325G
650nm 50mw
780nm 5MW infrared laser diodes
photo magneto electric
camera hitachi
HL6738
laser diode DVD
780nm 10mW laser diodes
Hitachi DSAUTAZ005
ld261
PO40
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laser diode 670nm 40mW
Abstract: dvd writer laser "Hitachi Kodaira Semiconductor" low noise, 780nm, 5mw 650NM laser diode 5mw ADE-508-011E photo magneto electric hitachi laser diode HL6720G 650nm 5mw laser with collimator
Text: Information and Industry Laser Diodes Application Note ADE-508-011E Hitachi 5/14/01 Safety Considerations Be sure to avoid direct exposure of human eyes to high power laser beams emitted from laser diodes. Even though barely visible and/or invisible to the human
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ADE-508-011E
laser diode 670nm 40mW
dvd writer laser
"Hitachi Kodaira Semiconductor"
low noise, 780nm, 5mw
650NM laser diode 5mw
ADE-508-011E
photo magneto electric
hitachi laser diode
HL6720G
650nm 5mw laser with collimator
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OPR 12 PHOTOCELL
Abstract: photocell opr 12 HL7836MG HE8807CL cake power hitachi HL7851G HL7851 10G APD chip "Hitachi, Ltd., 1997" Hitachi laser diodes IR Pulsed
Text: Hitachi Optodevice Data Book ADE-408-001E Safety Considerations Be sure to avoid direct exposure of human eyes to high power laser beams emitted from laser diodes. Even though barely visible and/or invisible to the human eye, they can be quite harmful. In
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ADE-408-001E
HR1201CX
OPR 12 PHOTOCELL
photocell opr 12
HL7836MG
HE8807CL
cake power
hitachi HL7851G
HL7851
10G APD chip
"Hitachi, Ltd., 1997"
Hitachi laser diodes IR Pulsed
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dfb activation energy
Abstract: "Hitachi Kodaira Semiconductor" EA-DFB 1455B HF8807 1310nm DFB BH LASER HL6348MG opnext l laser diode DVD 100mw HL6336G
Text: Optodevice Data Book ODE-408-001I Rev.9 Mar. 2003 Opnext Japan, Inc. Safety Considerations Be sure to avoid direct exposure of human eyes to high power laser beams emitted from laser diodes. Even though barely visible and/or invisible to the human eye, they can be quite harmful. In particular, avoid looking directly into a
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ODE-408-001I
HL1570AF
HL1569AF
dfb activation energy
"Hitachi Kodaira Semiconductor"
EA-DFB
1455B
HF8807
1310nm DFB BH LASER
HL6348MG
opnext l
laser diode DVD 100mw
HL6336G
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High-Frequency Modulation IC for Laser Diode
Abstract: TC9386FU
Text: 5. Technical Datasheets 5–3 TOLD2003SDA Features • Two-wavelength laser diode • Use of a monolithic chip realizes high-precision lasing point spacing. • Has succeeded in 85˚C operation for the first time as a two-wavelength laser diode. Suitable for use in DVD car
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OLD2003SDA
Reve50
TC9386FU)
TC9386FU
High-Frequency Modulation IC for Laser Diode
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RLD78MZM7
Abstract: Rohm multibeam
Text: Laser Diodes Datasheet 660nm / 780nm Dual Wavelength Lasers Part No. Wavelength λp （nm） Absolute maximum ratings （Tc=25° C） Electrical and optical characteristics （Tc=25° C） Po （mW） Topr PO VR Iop η Vop Im ɵ⊥ ɵ// I TH Max. （mW） （V） （°
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660nm
780nm
R1102A
RLD78MZM7
Rohm multibeam
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RLD2WMFR1
Abstract: TO 5.6mm package
Text: RLD2WMFR1 Data Sheet 660nm / 780nm Dual Wavelength Lasers Power 660nm ／ Part No. 780nm Wavelength λp （nm） Absolute maximum ratings （Tc=25° C） Electrical and optical characteristics （Tc=25° C） Po （mW） Topr PO VR Iop η Vop Im
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660nm
780nm
780nm
R1120A
RLD2WMFR1
TO 5.6mm package
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RLD65NZX2
Abstract: No abstract text available
Text: RLD65NZX2 Data Sheet 660nm / 780nm Dual Wavelength Lasers Power 660nm ／ Part No. 780nm Wavelength λp （nm） Absolute maximum ratings （Tc=25° C） Electrical and optical characteristics （Tc=25° C） Po （mW） Topr PO VR Iop η Vop Im
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RLD65NZX2
660nm
780nm
780nm
R1120A
RLD65NZX2
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Untitled
Abstract: No abstract text available
Text: RLD65PZX3 Data Sheet 660nm / 780nm Dual Wavelength Lasers Power 660nm ／ Part No. 780nm Wavelength λp （nm） Absolute maximum ratings （Tc=25° C） Electrical and optical characteristics （Tc=25° C） Po （mW） Topr PO VR Iop η Vop Im
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RLD65PZX3
660nm
780nm
780nm
R1120A
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Untitled
Abstract: No abstract text available
Text: RLD2WMFL3 Data Sheet 660nm / 780nm Dual Wavelength Lasers Power 660nm ／ Part No. 780nm Wavelength λp （nm） Absolute maximum ratings （Tc=25° C） Electrical and optical characteristics （Tc=25° C） Po （mW） Topr PO VR Iop η Vop Im
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660nm
780nm
780nm
R1120A
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Untitled
Abstract: No abstract text available
Text: RLD2WMFL1 Data Sheet 660nm / 780nm Dual Wavelength Lasers Power 660nm ／ Part No. 780nm Wavelength λp （nm） Absolute maximum ratings （Tc=25° C） Electrical and optical characteristics （Tc=25° C） Po （mW） Topr PO VR Iop η Vop Im
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660nm
780nm
780nm
R1120A
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EPITAXX ETX 300
Abstract: K050 EPITAXX ETX 75 InGaas PIN photodiode, 1550 sensitivity 00003S PD submount HYBRID CERAMIC Photodiodes ETX 40 InGaas PIN photodiode, 1550 sensitivity application
Text: = — = = ETX 75CER-H/F ETX 300CER-H/F iPiTlIAA H ig h Speed InGaAs P hotodiodes Front Illuminated on Ceramic Submounts Fe a tu res •Photosensitive diameters of 75 or 300 |i.m ■High responsivity at 1300 and 1550 nm ■Low capacitance, low dark current
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75CER-H/F
300CER-H/F
33bOMDb
0D0D358
75CER-F/H,
300CER-F/H
75CER-H,
300CER-H
O-H-02
75CER-F
EPITAXX ETX 300
K050
EPITAXX ETX 75
InGaas PIN photodiode, 1550 sensitivity
00003S
PD submount
HYBRID CERAMIC
Photodiodes
ETX 40
InGaas PIN photodiode, 1550 sensitivity application
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EPITAXX ETX 300
Abstract: InGaas PIN photodiode, 1550 sensitivity EPITAXX photodiodes EPITAXX ETX 75 InGaAs backside illuminated ingaas photodiode inGaAs photodiode 1550 InGaas PIN photodiode, 1550 ETX 40
Text: E g = = = v v ETX 75CER-H/F ETX 300CER-H/F High Speed InGaAs Photodiodes Front Illuminated on Ceramic Submounts Features •Photosensitive diameters of 75 or 300 |i.m ■High responsivity at 1300 and 1550 nm ■Low capacitance, low dark current ■Planar, passivated diode
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75CER-H/F
300CER-H/F
33b040b
75CER-F/H,
300CER-F/H
75CER-H,
300CER-H
75CER-F
300CER-F
io-M-02
EPITAXX ETX 300
InGaas PIN photodiode, 1550 sensitivity
EPITAXX
photodiodes
EPITAXX ETX 75
InGaAs
backside illuminated ingaas photodiode
inGaAs photodiode 1550
InGaas PIN photodiode, 1550
ETX 40
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