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    Untitled

    Abstract: No abstract text available
    Text: September 1996 Revision 1.0 DATA SHEET EOB1UV641 1/4 -(60/70)TG-S 8MByte (1M x 64) CMOS EDO DRAM Module - 3.3V General Description The EOB1UV641(1/4)-(60/70)TG-S is a high performance, EDO (Extended Data Out) 8-megabyte dynamic RAM module organized as 1M words by 64 bits, in a 144-pins, small outline dual-in-line (SO DIMM) memory modules.


    Original     		PDF EOB1UV641 144-pins, MB81V1 1Mx16 MP-DRAMM-DS-20393-9/96

    HY51V18164B

    Abstract: HY51V18164
    Text: HYM5V64124A Q-Series Unbuffered SO DIMM 1Mx64-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM5V64124A is a 1M x 64-bit EDO mode CMOS DRAM module consisting of four HY51V18164B in 42/42 pin SOJ or 44/50 pin TSOPII and one 2048 bit EEPROM on a 144 Zig Zag Dual pin glass-epoxy


    Original     		PDF HYM5V64124A 1Mx64-bit 64-bit HY51V18164B HYM5V64124AQG/ATQG/ASLQG/ASLTQG DQ0-DQ63) 1CE16-10-APR96 144pin HY51V18164

    M378T2953EZ3

    Abstract: samsung 512mb ddr
    Text: UDIMM DDR2 SDRAM DDR2 Unbuffered SDRAM MODULE 240pin Unbuffered Module based on 512Mb E-die 64/72-bit Non-ECC/ECC 60FBGA & 84FBGA with Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.


    Original     		PDF 240pin 512Mb 64/72-bit 60FBGA 84FBGA K4T51083QE 32Mbx16 32Mx64 M378T3354EZ3 K4T51163QE M378T2953EZ3 samsung 512mb ddr

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-45V8AB641 with 64M VC SDRAM TM VirtualChannel 8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-45V8AB641 is a 8,388,608 words by 64 bits VirtualChannel synchronous dynamic RAM module on which 8


    Original     		PDF MC-45V8AB641 64-BIT PD4565821

    PD 680 tds

    Abstract: 011199
    Text: 16M x 32 Bit 3.3V UNBUFFERED EDO SODIMM Extended Data Out EDO DRAM SMALL OUTLINE DIMM 32160sEDM4G08TC 72 Pin 16Mx32 EDO SODIMM Unbuffered, 4k Refresh, 3.3V Pin Assignment General Description Pin# Front Side Pin# Back Side 1 GND 2 DQ0 3 DQ1 4 DQ2 5 DQ3 6


    Original     		PDF 32160sEDM4G08TC 16Mx32 DS559-0 PD 680 tds 011199

    91T6

    Abstract: M378T6553CZ
    Text: 256MB,512MB,1GB Unbuffered DIMMs DDR2 SDRAM DDR2 Unbuffered SDRAM MODULE 240pin Unbuffered Module based on 512Mb C-die 64/72-bit Non-ECC/ECC Revision 1.1 March 2005 Rev. 1.1 Mar. 2005 256MB,512MB,1GB Unbuffered DIMMs DDR2 SDRAM DDR2 Unbuffered DIMM Ordering Information


    Original     		PDF 256MB 512MB 240pin 64/72-bit M378T3354CZ0-CD6/E6/D5/CC M378T6553CZ0-CD6/E6/D5/CC M378T2953CZ0-CD6/E6/D5/CC 91T6 M378T6553CZ

    M378T2953EZ3

    Abstract: No abstract text available
    Text: UDIMM DDR2 SDRAM DDR2 Unbuffered SDRAM MODULE 240pin Unbuffered Module based on 512Mb E-die 64/72-bit Non-ECC/ECC 60FBGA & 84FBGA with Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.


    Original     		PDF 240pin 512Mb 64/72-bit 60FBGA 84FBGA crx72) K4T51083QE 32Mbx16 32Mx64 M378T3354EZ3 M378T2953EZ3

    M378T2953EZ3

    Abstract: M391T2953EZ3 M378T2953EZ3-Ce7 M391T6553EZ3 DDR2-533 DDR2-667 DDR2-800 M391T M391
    Text: UDIMM DDR2 SDRAM DDR2 Unbuffered SDRAM MODULE 240pin Unbuffered Module based on 512Mb E-die 64/72-bit Non-ECC/ECC 60FBGA & 84FBGA with Lead-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE


    Original     		PDF 240pin 512Mb 64/72-bit 60FBGA 84FBGA K4T51083QE 32Mbx16 32Mx64 M378T3354EZ3 K4T51163QE M378T2953EZ3 M391T2953EZ3 M378T2953EZ3-Ce7 M391T6553EZ3 DDR2-533 DDR2-667 DDR2-800 M391T M391

    MSC2383257D

    Abstract: msc23832 RAS 05
    Text: This version: Mar. 6. 2000 Previous version: Jan. 13. 2000 Semiconductor MSC2383257D-xxBS16/DS16 8,388,608-word x 32-bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSC2383257D-xxBS16/DS16 is an 8,388,608-word x 32-bit CMOS dynamic random access memory module


    Original     		PDF MSC2383257D-xxBS16/DS16 608-word 32-bit MSC2383257D-xxBS16/DS16 72-pin MSC2383257D msc23832 RAS 05

    E-MOSFET

    Abstract: No abstract text available
    Text: INTEGRATED CIRCUITS DIVISION Application Note: AN-201 PRELIMINARY CPC1580 Application Technical Information AN-201-R00D www.ixysic.com 1 INTEGRATED CIRCUITS DIVISION 1 AN-201 PRELIMINARY Using the CPC1580 Isolated Gate Driver IC The CPC1580 is an excellent choice for remote


    Original     		PDF AN-201 CPC1580 AN-201-R00D E-MOSFET

    Untitled

    Abstract: No abstract text available
    Text: HB56H164EJN-6AR 1,048,576-Word x 64-Bit High Density Dynamic RAM Module 168-pin JEDEC Standard Outline Unbufferd 8BYTE DIMM Rev. 1.0 Feb. 01 1996 Description The HB56H164EJN belongs to 8 Byte DIMM Dual In-line Memory Module family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications. The


    Original     		PDF HB56H164EJN-6AR 576-Word 64-Bit 168-pin HB56H164EJN 16-Mbit HM5118165AJ) 24C02)

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI LS Is DRAM MODULE M H 1 M 3 2 B Y J - 5 ,-6 ,-7 / M H 1 M 3 2 B N Y J - 5 ,-6 , - 7 FAST PAGE MODE 33554432-BIT (1048576-WQRD BY 32-BIT) DYNAMIC RAM DESCRIPTION The MH1M32BYJ/BNYJ is 1048576-word x 32-bit dynamic PIN CONFIGURATION (TOP VIEW) (Single side]


    OCR Scan     		PDF 33554432-BIT 1048576-WQRD 32-BIT) MH1M32BYJ/BNYJ 1048576-word 32-bit 32BYJ/BNYJ-5 32BYJ/BNYJ-6 32BYJ/BNYJ-7

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KM M372V225A J KMM372V225AJ Fast Page Mode 2Mx72 DRAM DIMM with QCAS, 1K Refresh, 3.3V FEATURES GENERAL DESCRIPTION • Performance Range: The Sam sung KM M 372V225A is a 2M bit x 72 D ynam ic RAM high density m em ory module. The KMM372V225A - 6


    OCR Scan     		PDF M372V225A KMM372V225AJ 2Mx72 372V225A KMM372V225A Mx16bit 400mil 110ns 130ns

    5v RAS 0610

    Abstract: No abstract text available
    Text: •HYUNDAI HYM5V64124A R-Series Unbuffered 1M x 64-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM5V64124A is a 1M x 64-bit EDO m ode CMOS DRAM m odule consisting of four HY51V18164B in 42/42 pin SOJ or 44/50 pin TSOR-II and one 2048 bit EEPROM on a 168 pin glass-epoxy printed circuit board. 0.1


    OCR Scan     		PDF HYM5V64124A 64-bit HY51V18164B TheHYM5V64124ARG/ATRG/ASLRG/ASLTFiG DQ0-DQ63) 06-10-APR95 1EC06-10-MAR96 5v RAS 0610

    OA53

    Abstract: mtc61
    Text: O K I Semiconductor MTC8101M32-XX2A1 >01 DRAM CARD DESCRIPTION The MTC8101M32-xx2Al-01 is a lM-byte dynamic RAM card composed of 256K-word x 32-bit, being a 88-pin 2-piece type card proposed by the DRAM card guide-line of JEIDA. This provides a built-in buffer IC together with the DRAM device.


    OCR Scan     		PDF MTC8101M32-XX2A1 MTC8101M32-xx2Al-01 256K-word 32-bit, 88-pin 144-word 32-bit cycles/64ms MTC8101M32-702A1-01 MTC8101M32Cycle OA53 mtc61

    LTRG

    Abstract: No abstract text available
    Text: “H Y U N D A I HYM5V64224A R-Series Unbuffered 2M x 64-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM5V64224A is a 2M x 64-bit EDO mode CMOS DRAM module consisting of four HY5V18164B 42/42 pin SOJ or 44/50 pin TSOP-II and one 2048bit EEPROM on a 168 pin glass-epoxy printed circuit board. 0 1mF and


    OCR Scan     		PDF HYM5V64224A 64-bit HY5V18164B 2048bit HYM5V64224ARG/LRG/TRG/LTRG Single24A 1EC07-10-JUN96 LTRG

    Untitled

    Abstract: No abstract text available
    Text: MH4M32AATJ-6,-7 FAST PAGE MODE 134217728-BIT 4194304-WQRD BY 32-BIT DYNAMIC RAM DESCRIPTION The MH4M32AATJ ¡s 4194304-word x 32-bit dynamic RAM. PIN CONFIGURATION (TOP VIEW) [Both side] This is consists of eight industry standard 4M x 4 dynamic o RAMs in TSOP.


    OCR Scan     		PDF MH4M32AATJ-6 134217728-BIT 4194304-WQRD 32-BIT) MH4M32AATJ 4194304-word 32-bit

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI LSIs MH4M08A0J-6,-7,-8,-10/ MH4M08A0JA-6,-7,-8,-10 FAST PAGE MODE 4194304-WQRD BY 8-BIT DYNAMIC RAM DESCRIPTION The M H 4 M 0 8 A 0 J , J A is 4 1 9 4 3 0 4 word x 8 bit dynamic RAM and consists of eight industry standard 4 M x 1 PIN CONFIGURATION TOP VIEW


    OCR Scan     		PDF MH4M08A0J-6 MH4M08A0JA-6 4194304-WQRD 08A0J-8 08A0JA MH4M08A0 -10/MH4M08A0J -10/MH4M08A0JA-6

    HY51V18164

    Abstract: No abstract text available
    Text: • ' M Y U H D A I — • H Y M 5 V 6 4 1 2 4 A Q - S e r ie s SO DIMM 1Mx64-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM5V64124A is a 1M x 64-bit EDO mode CMOS DRAM module consisting of four HY51V18164B in 42/42 pin S O J or 44/50 pin TSO PII and one 2048 bit EEPRO M on a 144 Zig Zag Dual pin glass-epoxy


    OCR Scan     		PDF 1Mx64-bit HYM5V64124A 64-bit HY51V18164B HYM5V64124AQG/ATQG/ASLQG/ASLTQG 1Mx64-blt HYM5V64124AQG HYM5V64124ASLQG HYM6V64124ATQG HYM5VS4124ASLTQG HY51V18164

    Untitled

    Abstract: No abstract text available
    Text: .o S MH4M32AJJ-6,-7/ MH4M32ANJJ-6,-7 FAST PAGE MODE 134217728-BIT 4194304-WQRD BY 32-BIT DYNAMIC RAM DESCRIPTION The M H 4M 32AJJ/A N JJ is 4194304-wordby 3 2 -b it dynamic RAM module. This consists of eight industry standard 4M x 4 dynamic RAMs in TSOP. FEATURES


    OCR Scan     		PDF MH4M32AJJ-6 MH4M32ANJJ-6 134217728-BIT 4194304-WQRD 32-BIT 32AJJ/A 4194304-wordby MH4M32AJJ/ANJJ-6 MH4M32AJJ/ANJJ-7

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULES KMM5321000AV/AVG 1Mx32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: KM M5321000AV- 7 • • • • • • • tRAC tcAC tRC 70ns 2 0 ns 130ns KMM5321000AV- 8 80ns 2 0 ns 150ns KM M5321000AV-10 1 0 0 ns 25ns 180ns


    OCR Scan     		PDF KMM5321000AV/AVG 1Mx32 M5321000AV- KMM5321000AV- M5321000AV-10 130ns 150ns 180ns KMM5321000AV bitsx32

    KM41C4000A

    Abstract: No abstract text available
    Text: S A M S UN G E L E C T R O N I C S INC tME ]> • 7 T b M : m 2 D G 1 M 5 0 4 flOO ■ Sn6K KMM584020A DRAM MODULES 4M X 8 CMOS DRAM SIMM Memory Module, Low Power FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM584020A is a 4M bit x 8 Dynamic


    OCR Scan     		PDF KMM584020A KMM584020A KM41C4000AU 20-pin 30-pin 22/iF 130ns KMM584020A-8 150ns KM41C4000A

    hy51v18164b

    Abstract: No abstract text available
    Text: -HYUNDAI HYM5V64124A Q-Series SO DIMM 1M x 64-bit CMOS DRAM MODULE _with EXTENDED DATA OUT DESCRIPTION The HYM5V64124Ais a 1M x 64-bit ED O mode C M O S DRAM module consisting of four HY51V18164B in 42/42 pin SO J or 44/50 pin TSOP-II and one 2048 bit EEPR O M on a 144 Zig Zag Dual pin glass-epoxy printed circuit


    OCR Scan     		PDF HYM5V64124A 64-bit HYM5V64124Ais HY51V18164B HYM5V64124AQG/ATQG/ASLQG/ASLTQG 1CE16-10-APR96 HYM5V64124AQG HYM5V64124ASLQG

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI HYM5V64124A Q-Series SO DIMM 1M _ X 64-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM5V64124A is a 1M x 64-bit EDO mode CMOS DRAM m odule consisting of four HY51V18164B in 42/42 pin SOJ or 44/50 pin TSOP-II and one 2048 bit EEPROM on a 144 Zig Zag Dual pin glass-epoxy printed circuit


    OCR Scan     		PDF HYM5V64124A 64-bit HY51V18164B HYM5V64124AQG/ATQG/ASLQG/ASLTQG 70Capacitance DQ0-DQ63) 1CE16-10-APR96