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    tl249

    Abstract: tl2472 TL244 TRANSISTOR tl131 TL251 tl239 PTFB182503 PTFB182503FL tl250 TL242
    Text: PTFB182503EL PTFB182503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1805 – 1880 MHz Description The PTFB182503EL and PTFB182503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier


    Original     		PDF PTFB182503EL PTFB182503FL PTFB182503EL PTFB182503FL 240-watt H-33288-6, H-34288-6, tl249 tl2472 TL244 TRANSISTOR tl131 TL251 tl239 PTFB182503 tl250 TL242

    ATC-600A

    Abstract: BCP56 LM7805 PTFA212001E PTFA212001F RO4350
    Text: PTFA212001E PTFA212001F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 200 W, 2110 – 2170 MHz Description The PTFA212001E and PTFA212001F are 200-watt LDMOS FETs designed for single- and two-carrier WCDMA power amplifier


    Original     		PDF PTFA212001E PTFA212001F PTFA212001E PTFA212001F 200-watt H-36260-2 H-37260-2 ATC-600A BCP56 LM7805 RO4350

    a2324

    Abstract: PTFA192401E PTFA192401F RF35 RO4350 BCP56 LM7805 PTFA192401F V4
    Text: PTFA192401E PTFA192401F Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930 – 1990 MHz Description The PTFA192401E and PTFA192401F are 240-watt LDMOS FETs intended for single- and two-carrier WCDMA and CDMA applications from 1930 to 1990 MHz. Features include input and output matching,


    Original     		PDF PTFA192401E PTFA192401F PTFA192401E PTFA192401F 240-watt H-36260-2 H-37260-2 a2324 RF35 RO4350 BCP56 LM7805 PTFA192401F V4

    Untitled

    Abstract: No abstract text available
    Text: PTFA091503EL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 150 W, 920 – 960 MHz Description The PTFA091503EL is a 150-watt, internally-matched FET intended for use in power ampliier applications in the 920 to 960 MHz band.


    Original     		PDF PTFA091503EL PTFA091503EL 150-watt, H-33288-6

    Untitled

    Abstract: No abstract text available
    Text: PTFA192001E PTFA192001F Thermally-Enhanced High Power RF LDMOS FETs 200 W, 1930 – 1990 MHz Description The PTFA192001E and PTFA192001F are 200-watt LDMOS FETs intended for single- and two-carrier WCDMA and CDMA applications from 1930 to 1990 MHz. Features include input and output matching,


    Original     		PDF PTFA192001E PTFA192001F 200-watt H-36260-2 H-37260-2

    PTFA072401FLV5XWSA1

    Abstract: VARIABLE RESISTOR 2K LM7805 LTN 156
    Text: PTFA072401EL PTFA072401FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 30 V, 725 – 770 MHz Description The PTFA072401EL and PTFA072401FL are 240-watt LDMOS FETs designed for use in cellular power amplifier applications in the


    Original     		PDF PTFA072401EL PTFA072401FL PTFA072401FL 240-watt H-33288-2 H-34288-2 PTFA072401FLV5XWSA1 VARIABLE RESISTOR 2K LM7805 LTN 156

    PTFA212001E

    Abstract: ATC-600A PTFA212001F LM7805 05 marking us capacitor pf l1 BCP56 LM7805 RO4350 A212001E PTFA212001EV4
    Text: PTFA212001E PTFA212001F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 200 W, 2110 – 2170 MHz Description The PTFA212001E and PTFA212001F are 200-watt LDMOS FETs designed for single- and two-carrier WCDMA power amplifier


    Original     		PDF PTFA212001E PTFA212001F PTFA212001E PTFA212001F 200-watt H-36260-2 H-37260-2 ATC-600A LM7805 05 marking us capacitor pf l1 BCP56 LM7805 RO4350 A212001E PTFA212001EV4

    diode c723

    Abstract: PTFA072401FL VARIABLE RESISTOR 2K LM7805 PTFA072401EL RO4350 BCP56 LM7805 voltage regulator packages DD 127 D TRANSISTOR
    Text: PTFA072401EL PTFA072401FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 725 – 770 MHz Description The PTFA072401EL and PTFA072401FL are 240-watt LDMOS FETs designed for use in cellular power amplifier applications in the 725 to


    Original     		PDF PTFA072401EL PTFA072401FL PTFA072401EL PTFA072401FL 240-watt H-33288-2 H-34288-2 diode c723 VARIABLE RESISTOR 2K LM7805 RO4350 BCP56 LM7805 voltage regulator packages DD 127 D TRANSISTOR

    smd diode code pj 43

    Abstract: TBD0603 smd diode code pj 59 smd diode code pj 51 BERG69157-102 BG1 SOT23-6 3pin_solder_jumper BG3 SOT23-6 smd diode code pj 70 CP 022 ND
    Text: Preliminary Technical Data Evaluation Board for the 16-Bit, Dual, Continuous Time Sigma-Delta ADC AD9262EBZ/AD9262-5EBZ/AD9262-10EBZ Therefore, minimal or no filtering is required between the demodulator and the ADC. A prototype area for a fourth order filter is provided in which additional filtering can be tested.


    Original     		PDF 16-Bit, AD9262EBZ/AD9262-5EBZ/AD9262-10EBZ AD9262, AD9516 ADR130B opt95-SN74LVC 296-13010-1-ND ADA4937-2 smd diode code pj 43 TBD0603 smd diode code pj 59 smd diode code pj 51 BERG69157-102 BG1 SOT23-6 3pin_solder_jumper BG3 SOT23-6 smd diode code pj 70 CP 022 ND

    TL139

    Abstract: PTFB183404 PTFB183404EF TL148 TRANSISTOR tl131 TL162 TL170 tl172 c105 TRANSISTOR TL145
    Text: PTFB183404F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 340 W, 1805 – 1880 MHz Description The PTFB183404F is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to


    Original     		PDF PTFB183404F PTFB183404F 340-watt H-37275-6/2 TL139 PTFB183404 PTFB183404EF TL148 TRANSISTOR tl131 TL162 TL170 tl172 c105 TRANSISTOR TL145

    TL113

    Abstract: tl201 TL217 w3 smd transistor transistor c111
    Text: PTFA220081M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 8 W, 700 – 2200 MHz Description The PTFA220081M an unmatched 8-watt LDMOS FET suitable for power ampliiers applications with frequencies from 700 MHz to 2200


    Original     		PDF PTFA220081M PTFA220081M PG-SON-10 TL113 tl201 TL217 w3 smd transistor transistor c111

    TC-00104-00

    Abstract: DE C308 HDR 2x6 Variable resistor 10K ohm 47UF 50V SMT CASE C 5k potentiometer center tap ferrite smt emi 7A SOIC8 ANALOG DEVICE j301 HC49 BAT54C-13
    Text: D O C - 0 3 6 4 - 0 1 0 R E V D DEMO9S08QG8 Demonstration Board for Freescale MC9S08QG8 Also Applies to the CSM9S08QG8SLK Axiom Manufacturing • 2813 Industrial Lane • Garland, TX 75041 Email: Sales@axman.com Web: http://www.axman.com D E M O 9 S 0 8 Q G 8


    Original     		PDF DEMO9S08QG8 MC9S08QG8 CSM9S08QG8SLK CSM9S08QG8SLK. Ssop20) MAX3218 Sot23-5) LMV321 TC-00104-00 MC68908QG8CPB TC-00104-00 DE C308 HDR 2x6 Variable resistor 10K ohm 47UF 50V SMT CASE C 5k potentiometer center tap ferrite smt emi 7A SOIC8 ANALOG DEVICE j301 HC49 BAT54C-13

    10 ohms potentiometer

    Abstract: 08051J100GBTTR BCP56 LM7805 PTFA182001E RO4350
    Text: PTFA182001E Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 200 W, 1805 – 1880 MHz Description The PTFA182001E is a 200-watt LDMOS FET intended for EDGE applications from 1805 to 1880 MHz. Features include input and output


    Original     		PDF PTFA182001E PTFA182001E 200-watt 10 ohms potentiometer 08051J100GBTTR BCP56 LM7805 RO4350

    LM7805

    Abstract: BCP56 PTFA212401E PTFA212401F
    Text: PTFA212401E PTFA212401F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 – 2170 MHz Description The PTFA212401E and PTFA212401F are 240-watt LDMOS FETs designed for single- and two-carrier WCDMA power amplifier


    Original     		PDF PTFA212401E PTFA212401F PTFA212401E PTFA212401F 240-watt H-36260-2 H-37260-2 LM7805 BCP56

    TL235

    Abstract: TL236 TL230 TRANSISTOR tl131 TL1251
    Text: PTFB211803EL PTFB211803FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 180 W, 2110 – 2170 MHz Description The PTFB211803EL and PTFB211803FL are 180-watt LDMOS FETs intended for use in multi-standard cellular power amplifier


    Original     		PDF PTFB211803EL PTFB211803FL PTFB211803FL 180-watt H-33288-6 H-34288-6 TL235 TL236 TL230 TRANSISTOR tl131 TL1251

    Untitled

    Abstract: No abstract text available
    Text: PTFA212401E PTFA212401F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 – 2170 MHz Description The PTFA212401E and PTFA212401F are 240-watt LDMOS FETs designed for single- and two-carrier WCDMA power amplifier


    Original     		PDF PTFA212401E PTFA212401F PTFA212401F 240-watt H-36260-2 H-37260-2

    capacitor marking c106

    Abstract: NFM18Ps105 TL217 NFM18PS105R0J3 TL222 PTFA220081M Transistor tl217 TRANSISTOR SMD w2 c105 TRANSISTOR c103 TRANSISTOR DATA
    Text: PTFA220081M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 8 W, 700 – 2200 MHz Description The PTFA220081M an unmatched 8-watt LDMOS FET suitable for power amplifiers applications with frequencies from 700 MHz to 2200


    Original     		PDF PTFA220081M PTFA220081M capacitor marking c106 NFM18Ps105 TL217 NFM18PS105R0J3 TL222 Transistor tl217 TRANSISTOR SMD w2 c105 TRANSISTOR c103 TRANSISTOR DATA

    OMRON p7 487

    Abstract: CC0603KRX7R9 xilinx USB cable CN0062 EMERSON rectifier hsc-adc-evalcz C431L raychem cable termination KIT HT HSC-ADC-EVALC ADL5382
    Text: Evaluation Board User Guide UG-093 One Technology Way • P.O. Box 9106 • Norwood, MA 02062-9106, U.S.A. • Tel: 781.329.4700 • Fax: 781.461.3113 • www.analog.com Evaluation Board for the Dual, Continuous Time Sigma-Delta Modulator To achieve optimal performance from the AD9267, a low jitter


    Original     		PDF UG-093 AD9267, AD9516 AD9516-0 AD9516-0 UG08877-0-3/10 OMRON p7 487 CC0603KRX7R9 xilinx USB cable CN0062 EMERSON rectifier hsc-adc-evalcz C431L raychem cable termination KIT HT HSC-ADC-EVALC ADL5382

    Untitled

    Abstract: No abstract text available
    Text: PTFA071701E PTFA071701F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 170 W, 725 – 770 MHz Description The PTFA071701E and PTFA071701F are 170-watt, LDMOS FETs designed for use in cellular power amplifiers in the 725 to 770 MHz


    Original     		PDF PTFA071701E PTFA071701F PTFA071701E PTFA071701F 170-watt,

    Untitled

    Abstract: No abstract text available
    Text: PTFA212001E PTFA212001F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 200 W, 2110 – 2170 MHz Description The PTFA212001E and PTFA212001F are 200-watt LDMOS FETs designed for single- and two-carrier WCDMA power amplifier


    Original     		PDF PTFA212001E PTFA212001F PTFA212001E PTFA212001F 200-watt H-36260-2 H-37260-2

    ptfa192001e

    Abstract: PTFA192001E V4 LM7805 PTFA192001F RO4350 PCS3475CT-ND
    Text: PTFA192001E PTFA192001F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 200 W, 1930 – 1990 MHz Description The PTFA192001E and PTFA192001F are 200-watt LDMOS FETs intended for single- and two-carrier WCDMA and CDMA applications


    Original     		PDF PTFA192001E PTFA192001F PTFA192001E PTFA192001F 200-watt H-36260-2 H-37260-2 PTFA192001E V4 LM7805 RO4350 PCS3475CT-ND

    PTFA092213EL

    Abstract: LM7805 resistor 51k transistor c331 BCP56 R250 RO4350
    Text: PTFA092213EL PTFA092213FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092213EL and PTFA092213FL are 220-watt, internallymatched LDMOS FETs designed for use in cellular power amplifier


    Original     		PDF PTFA092213EL PTFA092213FL PTFA092213EL PTFA092213FL 220-watt, LM7805 resistor 51k transistor c331 BCP56 R250 RO4350

    c102 TRANSISTOR

    Abstract: c103 TRANSISTOR c106 TRANSISTOR TRANSISTOR c105 TRANSISTOR c104 c103 m TRANSISTOR p 4712 NFM18PS105R0J3 c105 TRANSISTOR tl113
    Text: PTFA220081M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 8 W, 700 – 2200 MHz Description The PTFA220081M an unmatched 8-watt LDMOS FET suitable for power amplifiers applications with frequencies from 700 MHz to 2200


    Original     		PDF PTFA220081M PTFA220081M PG-SON-10 c102 TRANSISTOR c103 TRANSISTOR c106 TRANSISTOR TRANSISTOR c105 TRANSISTOR c104 c103 m TRANSISTOR p 4712 NFM18PS105R0J3 c105 TRANSISTOR tl113

    M5819P

    Abstract: 5-pin smd c255 NPN C239 C312 diode c227 diode MOSFET R166 SPE1302-ND S5920Q NPN C246 diode c248
    Text: AMD K6 SDB - TOP LEVEL Revised: Friday, March 12, 1999 K6SDBREVB Revision: REV C Item Quantity Reference Value _ 1 2 1 BT1 27 C1,C2,C4,C8,C12,C20,C21, C23,C26,C36,C37,C38,C42, C47,C56,C59,C60,C61,C62, C63,C64,C68,C79,C95,C97,


    Original     		PDF QFP160 100MHz SSOP48 32-bit, QFP208 TS040 QFP144 TP11SH8 PE68515 PLCC32 M5819P 5-pin smd c255 NPN C239 C312 diode c227 diode MOSFET R166 SPE1302-ND S5920Q NPN C246 diode c248