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    PTFB211803EL Search Results

    PTFB211803EL Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    PTFB211803ELV1R0XTMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS H-33288-6 Original PDF
    PTFB211803ELV1R250XTMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS Original PDF

    PTFB211803EL Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TL235

    Abstract: TL236 TL230 TRANSISTOR tl131 TL1251
    Text: PTFB211803EL PTFB211803FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 180 W, 2110 – 2170 MHz Description The PTFB211803EL and PTFB211803FL are 180-watt LDMOS FETs intended for use in multi-standard cellular power amplifier


    Original     		PDF PTFB211803EL PTFB211803FL PTFB211803FL 180-watt H-33288-6 H-34288-6 TL235 TL236 TL230 TRANSISTOR tl131 TL1251

    TRANSISTOR tl131

    Abstract: TL136 tl2322 TL2222 c103 TRANSISTOR TL237 TRANSISTOR c104 C801 C802 C803
    Text: PTFB211803EL PTFB211803FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 180 W, 2110 – 2170 MHz Description The PTFB211803EL and PTFB211803FL are 180-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications


    Original     		PDF PTFB211803EL PTFB211803FL PTFB211803EL PTFB211803FL 180-watt TRANSISTOR tl131 TL136 tl2322 TL2222 c103 TRANSISTOR TL237 TRANSISTOR c104 C801 C802 C803

    Untitled

    Abstract: No abstract text available
    Text: PTFB211803EL PTFB211803FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 180 W, 2110 – 2170 MHz Description The PTFB211803EL and PTFB211803FL are 180-watt LDMOS FETs intended for use in multi-standard cellular power ampliier applications


    Original     		PDF PTFB211803EL PTFB211803FL PTFB211803EL PTFB211803FL 180-watt H-34288-4/2 21ngerous

    TL2322

    Abstract: transistor tl120
    Text: PTFB211803EL PTFB211803FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 180 W, 2110 – 2170 MHz Description The PTFB211803EL and PTFB211803FL are 180-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications


    Original     		PDF PTFB211803EL PTFB211803FL PTFB211803FL 180-watt H-33288-6 H-34288-4/2 TL2322 transistor tl120

    PTFB090901EA

    Abstract: No abstract text available
    Text: RF Power Product Selection Guide LDMOS Transistors and ICs www.infineon.com/rfpower RF Power Product Selection Guide New Products PTVA093002TC n 703–960MHz n Dual Path Design n Typical RF Characteristics Doherty, 758MHz – POUT = 63W avg – Gain = 17.5dB


    Original     		PDF PTVA093002TC 960MHz 758MHz) PXAC201602FC 2025MHz 2025MHz) H-49248H-4 H-37248-4 400MHz 2700MHz] PTFB090901EA

    PTFA142401EL

    Abstract: PTFA041501E PTFA041501F PTFA070601E PTFA070601F PTFA071701E PTFA071701F PTFA072401EL PTFA072401FL PTFA080551E
    Text: RF Power Product Selection Guide LDMOS T r a n s i s t o r s a n d I C s [ www.infineon.com/rfpower ] Product Selection Guide I N F I N E O N ’ S s t a t e - o f - t h e - a r t L D M O S t e c h n o l o g y , high-volume manufacturing facilities and fully-automated production assembly


    Original     		PDF PTFA041501E PTFA041501F PTFA070601E PG-DSO-20-63 PG-SON-10 H-33265-8 H-34265-8 H-36248-2 H-37248-2 H-36260-2 PTFA142401EL PTFA041501E PTFA041501F PTFA070601E PTFA070601F PTFA071701E PTFA071701F PTFA072401EL PTFA072401FL PTFA080551E

    PTFA041501E

    Abstract: PTFA220121M PTFB241402F PTFA041501F PTFA070601E PTFA070601F PTFA071701E PTFA071701F PTFA072401EL PTFA072401FL
    Text: RF Power Product Selection Guide LDMOS T r a n s i s t o r s a n d I C s [ www.infineon.com/rfpower ] Product Selection Guide I N F I N E O N ’ S s t a t e - o f - t h e - a r t L D M O S t e c h n o l o g y , high-volume manufacturing facilities and fully-automated production assembly


    Original     		PDF PTFA041501E PTFA041501F PTFA070601E 725-7452FL PG-DSO-20-63 PG-SON-10 H-33265-8 H-34265-8 H-36248-2 H-37248-2 PTFA041501E PTFA220121M PTFB241402F PTFA041501F PTFA070601E PTFA070601F PTFA071701E PTFA071701F PTFA072401EL PTFA072401FL

    BGU7073

    Abstract: BGU7072 Infineon Power Management Selection Guide 2011 toshiba car audio catalog 2015 BAP50-03 spice model BB 804 varicap diode MOSFET TOSHIBA 2015 RF MANUAL 19TH EDITION RF MANUAL blf188
    Text: RF MANUAL 19TH EDITION www.nxp.com www.nxp.com Application and design manual for High Performance RF products 2015 NXP Semiconductors N.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by


    Original     		PDF