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    PCH MOSFET MARKING CODE VISHAY SILICONIX Search Results

    PCH MOSFET MARKING CODE VISHAY SILICONIX Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    PCH MOSFET MARKING CODE VISHAY SILICONIX Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Si5504DC-T1-E3

    Abstract: Si5504DC
    Text: Si5504DC Vishay Siliconix Complementary 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel - 30 RDS(on) (Ω) ID (A) 0.085 at VGS = 10 V ± 3.9 0.143 at VGS = 4.5 V ± 3.0 0.165 at VGS = - 10 V ± 2.8 0.290 at VGS = - 4.5 V ± 2.1 • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si5504DC 2002/95/EC Si5504DC-T1-E3 Si5504DC-T1-GE3 18-Jul-08

    Si5517DU

    Abstract: Si5517DU-T1-GE3 si5517
    Text: Si5517DU Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS N-Channel RDS(on) (Ω) 0.039 at VGS = 4.5 V 0.045 at VGS = 2.5 V 0.055 at VGS = 1.8 V 0.072 at VGS = - 4.5 V 0.100 at VGS = - 2.5 V 0.131 at VGS = - 18 V 20 P-Channel


    Original     		PDF Si5517DU 18-Jul-08 Si5517DU-T1-GE3 si5517

    Si5513DC

    Abstract: Si5513DC-T1
    Text: Si5513DC Vishay Siliconix Complementary 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) N Channel N-Channel 20 P Channel P-Channel −20 20 rDS(on) (W) ID (A) 0.075 @ VGS = 4.5 V 4.2 0.134 @ VGS = 2.5 V 3.1 0.155 @ VGS = −4.5 V −2.9 0.260 @ VGS = −2.5 V −2.2


    Original     		PDF Si5513DC Si5513DC-T1 Si5513DC-T1--E3 08-Apr-05

    Si5509DC

    Abstract: No abstract text available
    Text: Si5509DC Vishay Siliconix N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) ID (A)a Qg (Typ.) 0.052 at VGS = 4.5 V 6.1a 0.084 at VGS = 2.5 V 4.8a 0.090 at VGS = - 4.5 V - 4.8a 0.160 at VGS = - 2.5 V


    Original     		PDF Si5509DC 2002/95/EC 11-Mar-11

    Si5509DC

    Abstract: 60417 VISHAY diode MARKING ED
    Text: Si5509DC New Product Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N Channel N-Channel 20 P Channel P-Channel –20 20 rDS(on) (W) 0.052 at VGS = 4.5 V ID (A) 0.084 at VGS = 2.5 V 4.8a 0.090 at VGS = –4.5 V –4.8a


    Original     		PDF Si5509DC 18-Jul-08 60417 VISHAY diode MARKING ED

    42138

    Abstract: Si5513DC Si5513DC-T1
    Text: Si5513DC Vishay Siliconix Complementary 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) N Channel N-Channel 20 P Channel P-Channel −20 20 rDS(on) (W) ID (A) 0.075 @ VGS = 4.5 V 4.2 0.134 @ VGS = 2.5 V 3.1 0.155 @ VGS = −4.5 V −2.9 0.260 @ VGS = −2.5 V −2.2


    Original     		PDF Si5513DC Si5513DC-T1 Si5513DC-T1--E3 18-Jul-08 42138

    SI5509DC

    Abstract: Si5509DC-T1-GE3 si5509dc-t1-e3 si5509
    Text: Si5509DC Vishay Siliconix N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) ID (A)a Qg (Typ.) 0.052 at VGS = 4.5 V 6.1a 0.084 at VGS = 2.5 V 4.8a 0.090 at VGS = - 4.5 V - 4.8a 0.160 at VGS = - 2.5 V


    Original     		PDF Si5509DC 2002/95/EC 18-Jul-08 Si5509DC-T1-GE3 si5509dc-t1-e3 si5509

    Si5513DC

    Abstract: Si5513DC-T1-E3
    Text: Si5513DC Vishay Siliconix Complementary 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) ID (A) 0.075 at VGS = 4.5 V 4.2 0.134 at VGS = 2.5 V 3.1 0.155 at VGS = - 4.5 V - 2.9 0.260 at VGS = - 2.5 V - 2.2 • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si5513DC 2002/95/EC Si5513DC-T1-E3 Si5513DC-T1-GE3 18-Jul-08

    Si5517DU

    Abstract: No abstract text available
    Text: Si5517DU New Product Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) 0.039 @ VGS = 4.5 V ID (A)a 0.045 @ VGS = 2.5 V 6 0.055 @ VGS = 1.8 V 6 0.072 @ VGS = –4.5 V –6 0.100 @ VGS = –2.5 V –6 0.131 @ VGS = –1.8 V


    Original     		PDF Si5517DU 08-Apr-05

    42138

    Abstract: Si5513DC Si5513DC-T1 VISHAY diode MARKING EB
    Text: Si5513DC Vishay Siliconix Complementary 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) N Channel N-Channel 20 P Channel P-Channel −20 20 rDS(on) (W) ID (A) 0.075 @ VGS = 4.5 V 4.2 0.134 @ VGS = 2.5 V 3.1 0.155 @ VGS = −4.5 V −2.9 0.260 @ VGS = −2.5 V −2.2


    Original     		PDF Si5513DC Si5513DC-T1 Si5513DC-T1--E3 S-42138--Rev. 15-Nov-04 42138 VISHAY diode MARKING EB

    Si5513DC

    Abstract: Si5513DC-T1-E3
    Text: Si5513DC Vishay Siliconix Complementary 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) ID (A) 0.075 at VGS = 4.5 V 4.2 0.134 at VGS = 2.5 V 3.1 0.155 at VGS = - 4.5 V - 2.9 0.260 at VGS = - 2.5 V - 2.2 • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si5513DC 2002/95/EC Si5513DC-T1-E3 Si5513DC-T1-GE3 11-Mar-11

    Si5509DC

    Abstract: s417
    Text: Si5509DC New Product Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N Channel N-Channel 20 P Channel P-Channel –20 20 rDS(on) (W) 0.052 at VGS = 4.5 V ID (A) 0.084 at VGS = 2.5 V 4.8a 0.090 at VGS = –4.5 V –4.8a


    Original     		PDF Si5509DC 08-Apr-05 s417

    Si5515DC

    Abstract: Si5515DC-T1-E3
    Text: Si5515DC Vishay Siliconix Complementary 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.040 at VGS = 4.5 V 5.9 20 0.045 at VGS = 2.5 V 5.6 N-Channel P-Channel - 20 0.052 at VGS = 1.8 V 5.2 0.086 at VGS = - 4.5 V - 4.1 0.121 at VGS = - 2.5 V


    Original     		PDF Si5515DC 2002/95/EC 18-Jul-08 Si5515DC-T1-E3

    084BC

    Abstract: N- and P-Channel 30-V D-S MOSFET
    Text: Si5511DC Vishay Siliconix N- and P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 30 - 30 rDS(on) (Ω) ID (A) 0.055 at VGS = 4.5 V 4a,g 0.090 at VGS = 2.5 V 4a,g • TrenchFET Power MOSFETs Qg (Typ) APPLICATIONS 4.2 nC a 0.150 at VGS = - 4.5 V


    Original     		PDF Si5511DC Si5511DC-T1-E3 08-Apr-05 084BC N- and P-Channel 30-V D-S MOSFET

    N-Channel mosfet sot-363

    Abstract: No abstract text available
    Text: Si1539CDL Vishay Siliconix N- and P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel - 30 RDS(on) () ID (A)a 0.388 at VGS = 10 V 0.7 0.525 at VGS = 4.5 V 0.6 0.890 at VGS = - 10 V - 0.5 1.7 at VGS = - 4.5 V - 0.3 Qg (Typ.)


    Original     		PDF Si1539CDL OT-363 SC-70 Si1539CDL-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 N-Channel mosfet sot-363

    Untitled

    Abstract: No abstract text available
    Text: Si5517DU New Product Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) 0.039 @ VGS = 4.5 V ID (A)a 0.045 @ VGS = 2.5 V 6 0.055 @ VGS = 1.8 V 6 0.072 @ VGS = –4.5 V –6 0.100 @ VGS = –2.5 V –6 0.131 @ VGS = –1.8 V


    Original     		PDF Si5517DU 51930--Rev. 12-Sep-05

    Untitled

    Abstract: No abstract text available
    Text: Si5519DU Vishay Siliconix New Product N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.036 at VGS = 4.5 V 6.0 0.063 at VGS = 2.5 V 6.0 0.064 at VGS = - 4.5 V - 6.0 0.095 at VGS = - 2.5 V - 6.0 VDS (V) N-Channel P-Channel 20


    Original     		PDF Si5519DU Si5519DU-T1-E3 08-Apr-05

    list of n channel fet

    Abstract: Si5511DC-T1-E3
    Text: New Product Si5511DC Vishay Siliconix N- and P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 30 - 30 rDS(on) (Ω) ID (A) 0.055 at VGS = 4.5 V 4a,g 0.090 at VGS = 2.5 V 4a,g • TrenchFET Power MOSFETs Qg (Typ) APPLICATIONS


    Original     		PDF Si5511DC Si5511DC-T1-E3 08-Apr-05 list of n channel fet

    Untitled

    Abstract: No abstract text available
    Text: Si1539CDL Vishay Siliconix N- and P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel - 30 RDS(on) () ID (A)a 0.388 at VGS = 10 V 0.7 0.525 at VGS = 4.5 V 0.6 0.890 at VGS = - 10 V - 0.5 1.7 at VGS = - 4.5 V - 0.3 Qg (Typ.)


    Original     		PDF Si1539CDL OT-363 SC-70 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si1539CDL Vishay Siliconix N- and P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel - 30 RDS(on) () ID (A)a 0.388 at VGS = 10 V 0.7 0.525 at VGS = 4.5 V 0.6 0.890 at VGS = - 10 V - 0.5 1.7 at VGS = - 4.5 V - 0.3 Qg (Typ.)


    Original     		PDF Si1539CDL OT-363 SC-70 Si1539CDL-T1-GE3 11-Mar-11

    si3585

    Abstract: mosfet 23 Tsop-6 S1217
    Text: Si3585CDV Vishay Siliconix N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) () Max. • TrenchFET Power MOSFETs • 100 % Rg Tested • Material categorization: For definitions of compliance please see


    Original     		PDF Si3585CDV 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 si3585 mosfet 23 Tsop-6 S1217

    Untitled

    Abstract: No abstract text available
    Text: Si3585CDV Vishay Siliconix N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) () Max. • TrenchFET Power MOSFETs • 100 % Rg Tested • Material categorization: For definitions of compliance please see


    Original     		PDF Si3585CDV 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si5517DU Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS N-Channel RDS(on) (Ω) 0.039 at VGS = 4.5 V 0.045 at VGS = 2.5 V 0.055 at VGS = 1.8 V 0.072 at VGS = - 4.5 V 0.100 at VGS = - 2.5 V 0.131 at VGS = - 18 V 20 P-Channel


    Original     		PDF Si5517DU 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    7130-1 transistor

    Abstract: TRANSISTOR mosfet SD 1074 marking code LG Si1301 RU4 diode SM035X
    Text: SM035X_ Vishay Siliconix New Product Complementary N- and P-Channel 20-V D-S MOSFET TrenchFET PRODUCT SUMMARY M O SFETs V d s (V ) N-Channel P-Channel 20 -20 FEATURES rDS(on) ( ß ) lD (m A ) 5 @ VGs = 4.5 V 200


    OCR Scan     		PDF SM035X_ S-02367--Rev. 23-Oct-OO 7130-1 transistor TRANSISTOR mosfet SD 1074 marking code LG Si1301 RU4 diode SM035X