5.1 subwoofer printed circuit board
Abstract: 5.1 audio amplifier board 5.1 home theatre circuit 5.1 sound system circuit board MP7720DS 5.1 Channel Audio Board MP7782DF 5.1 Channel audio amplifier 5.1 audio power amplifier 5.1 audio circuit
Text: TM EV7720DS-7782-00D 150W Class D 5.1 Channel Audio Board The Future of Analog IC Technology TM EVALUATION BOARD GENERAL DESCRIPTION FEATURES The EV7720DS-7782-00D is an evaluation board for using MPS’ Class D Audio Amplifiers in 5.1 Surround Sound systems. The board has
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EV7720DS-7782-00D
EV7720DS-7782-00D
MP7720DS)
MP7782)
5.1 subwoofer printed circuit board
5.1 audio amplifier board
5.1 home theatre circuit
5.1 sound system circuit board
MP7720DS
5.1 Channel Audio Board
MP7782DF
5.1 Channel audio amplifier
5.1 audio power amplifier
5.1 audio circuit
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BCP56
Abstract: LM7805 PTFA190451E PTFA190451F RO4350
Text: PTFA190451E PTFA190451F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 45 W, 1930 – 1990 MHz Description The PTFA190451E and PTFA190451F are thermally-enhanced, 45-watt, internally matched LDMOS FETs designed for WCDMA,
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PTFA190451E
PTFA190451F
PTFA190451E
PTFA190451F
45-watt,
H-36265-2
H-37265-2
BCP56
LM7805
RO4350
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LM7805 smd
Abstract: BCP56 LM7805 PTF081301E PTF081301F transistor SMD LOA DD 127 D TRANSISTOR
Text: PTF081301E PTF081301F Thermally-Enhanced High Power RF LDMOS FETs 130 W, 869 – 960 MHz Description The PTF081301E and PTF081301F are 130-watt, internally-matched GOLDMOS FETs intended for EDGE and CDMA applications in the 869 to 960 MHz bands. Thermally-enhanced packaging provides the coolest
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PTF081301E
PTF081301F
PTF081301E
PTF081301F
130-watt,
LM7805 smd
BCP56
LM7805
transistor SMD LOA
DD 127 D TRANSISTOR
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transistor di 960
Abstract: No abstract text available
Text: PTFA092211EL PTFA092211FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092211EL and PTFA092211FL are 220-watt, internallymatched LDMOS FETs intended for EDGE and WCDMA applications
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PTFA092211EL
PTFA092211FL
PTFA092211EL
PTFA092211FL
220-watt,
H-34288-2
transistor di 960
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c102 TRANSISTOR
Abstract: PTFA220121M NFM18PS105R0J3 tl111 TRANSISTOR C802 TL204 TL231 c801 TL-205A tl113
Text: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS
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PTFA220121M
PTFA220121M
12-watt
PG-SON-10
c102 TRANSISTOR
NFM18PS105R0J3
tl111
TRANSISTOR C802
TL204
TL231
c801
TL-205A
tl113
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tl249
Abstract: tl2472 TL244 TRANSISTOR tl131 TL251 tl239 PTFB182503 PTFB182503FL tl250 TL242
Text: PTFB182503EL PTFB182503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1805 – 1880 MHz Description The PTFB182503EL and PTFB182503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier
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PTFB182503EL
PTFB182503FL
PTFB182503EL
PTFB182503FL
240-watt
H-33288-6,
H-34288-6,
tl249
tl2472
TL244
TRANSISTOR tl131
TL251
tl239
PTFB182503
tl250
TL242
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LM7805
Abstract: elna 50v BCP56 PTFA082201E PTFA082201F RO4350
Text: PTFA082201E PTFA082201F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 869 – 894 MHz Description The PTFA082201E and PTFA082201F are 220-watt LDMOS FETs designed for CDMA and WCDMA power amplifier applications in
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PTFA082201E
PTFA082201F
PTFA082201E
PTFA082201F
220-watt
LM7805
elna 50v
BCP56
RO4350
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LM7805 M SMD
Abstract: LM7805 smd 8 pin smd transistor marking l7 smd transistor marking C14 LM7805 smd smd transistor marking l6 transistor smd marking ND BCP56 LM7805 PTF210101M
Text: PTF210101M High Power RF LDMOS Field Effect Transistor 10 W, 2110 – 2170 MHz Description The PTF210101M is an unmatched 10-watt GOLDMOS FET intended for class AB base station applications in the 2110 to 2170 MHz band. This LDMOS device offers excellent gain, efficiency and linearity performance in
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PTF210101M
PTF210101M
10-watt
PG-RFP-10
LM7805 M SMD
LM7805 smd 8 pin
smd transistor marking l7
smd transistor marking C14
LM7805 smd
smd transistor marking l6
transistor smd marking ND
BCP56
LM7805
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LM7805 smd 8 pin
Abstract: smd transistor marking l7 SMD package marking ab l16 LM7805 smd smd lm7805 transistor smd marking ND BCP56 LM7805 PTF080101M smd transistor marking C14
Text: PTF080101M High Power RF LDMOS Field Effect Transistor 10 W, 450 – 960 MHz Description The PTF080101M is an unmatched 10-watt GOLDMOS FET intended for class AB base station applications in the 450 MHz to 960 MHz band. This LDMOS device offers excellent gain, efficiency and linearity performance in
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PTF080101M
PTF080101M
10-watt
PG-RFP-10
LM7805 smd 8 pin
smd transistor marking l7
SMD package marking ab l16
LM7805 smd
smd lm7805
transistor smd marking ND
BCP56
LM7805
smd transistor marking C14
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BCP56
Abstract: LM7805 PTFA091201GL PTFA091201HL A0912
Text: PTFA091201GL PTFA091201HL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz Description The PTFA091201GL and PTFA091201HL are 120-watt LDMOS FETs designed for ultra-linear GSM/EDGE power amplifier applications in
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PTFA091201GL
PTFA091201HL
PTFA091201GL
PTFA091201HL
120-watt
PG-63248-2
PG-64248-2
BCP56
LM7805
A0912
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200B
Abstract: BCP56 LM7805 PTFA211001E infineon gold P2KECT-ND
Text: PTFA211001E Thermally-Enhanced High Power RF LDMOS FET 100 W, 2110 – 2170 MHz Description The PTFA211001E is a thermally-enhanced, 100-watt, internallymatched GOLDMOS FET intended for WCDMA applications. It is characaterized for single- and two-carrier WCDMA operation from
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PTFA211001E
PTFA211001E
100-watt,
H-30248-2
200B
BCP56
LM7805
infineon gold
P2KECT-ND
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ssy 1920
Abstract: LM 2931 AT 05 BCP56 LM7805 PTFA191001E PTFA191001F
Text: PTFA191001E PTFA191001F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1930 – 1990 MHz Description The PTFA191001E and PTFA191001F are thermally-enhanced, 100-watt, internally-matched LDMOS FETs intended for WCDMA,
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PTFA191001E
PTFA191001F
PTFA191001E
PTFA191001F
100-watt,
IS-95
CDMA2000
H-36248-2
ssy 1920
LM 2931 AT 05
BCP56
LM7805
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LM7805
Abstract: elna 50v, 1uF LM7805 voltage regulator d 1879 TRANSISTOR BCP56 PTFA181001GL ELNA capacitor 100 uf 50v
Text: Preliminary PTFA181001GL PTFA181001HL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1805 – 1880 MHz Description The PTFA181001GL and PTFA181001GL are 100-watt LDMOS FETs designed for EDGE and WCDMA power amplifier applications in the
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PTFA181001GL
PTFA181001HL
PTFA181001GL
100-watt
LM7805
elna 50v, 1uF
LM7805 voltage regulator
d 1879 TRANSISTOR
BCP56
ELNA capacitor 100 uf 50v
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HP8596E
Abstract: PCC104bct-nd Y1 XTAL 16Mhz as-smd raltron PCC104BCTND PCC1749CT-ND PCCIC3CQCT-ND PCT3226CT-ND SW-DIP-8 DTS-2079
Text: 3.3V, PRECISION, 33MHz to 500MHz SY89531/2/3/4/5/6L PROGRAMMABLE LVPECL, HSTL EVALUATION BOARD AND LVDS BUS CLOCK SYNTHESIZER FEATURES DESCRIPTION • Integrated synthesizer plus fan out buffer, clock generator dividers , and translators in a 64-pin package
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33MHz
500MHz
SY89531/2/3/4/5/6L
64-pin
SY89531/2/3L)
14MHz
18MHz
SY89531/2/3L
HP8596E
PCC104bct-nd
Y1 XTAL 16Mhz
as-smd raltron
PCC104BCTND
PCC1749CT-ND
PCCIC3CQCT-ND
PCT3226CT-ND
SW-DIP-8
DTS-2079
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A26267-ND
Abstract: programming smt machine SHRD PCC104bct-nd HDR jumper PCC104BCTND nec mcu Connector HDR vert 2 pin K232 PCC330CGCTND
Text: User’s Manual K0RE81 Evaluation Platform for µPD78F9882 Microcontroller April 2003. NEC Electronics America, Inc. Printed in USA. All rights reserved. Document no. U16693EU1V0UM00 K0RE81 Evaluation Platform for µPD78F9882 2 K0RE81 Evaluation Platform for µPD78F9882
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K0RE81
PD78F9882
U16693EU1V0UM00
K0RE81
PD78F9882
K0RE81.
A26267-ND
programming smt machine
SHRD
PCC104bct-nd
HDR jumper
PCC104BCTND
nec mcu
Connector HDR vert 2 pin
K232
PCC330CGCTND
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ATC-600A
Abstract: BCP56 LM7805 PTFA212001E PTFA212001F RO4350
Text: PTFA212001E PTFA212001F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 200 W, 2110 – 2170 MHz Description The PTFA212001E and PTFA212001F are 200-watt LDMOS FETs designed for single- and two-carrier WCDMA power amplifier
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PTFA212001E
PTFA212001F
PTFA212001E
PTFA212001F
200-watt
H-36260-2
H-37260-2
ATC-600A
BCP56
LM7805
RO4350
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a2324
Abstract: PTFA192401E PTFA192401F RF35 RO4350 BCP56 LM7805 PTFA192401F V4
Text: PTFA192401E PTFA192401F Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930 – 1990 MHz Description The PTFA192401E and PTFA192401F are 240-watt LDMOS FETs intended for single- and two-carrier WCDMA and CDMA applications from 1930 to 1990 MHz. Features include input and output matching,
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PTFA192401E
PTFA192401F
PTFA192401E
PTFA192401F
240-watt
H-36260-2
H-37260-2
a2324
RF35
RO4350
BCP56
LM7805
PTFA192401F V4
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Untitled
Abstract: No abstract text available
Text: PTFA091503EL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 150 W, 920 – 960 MHz Description The PTFA091503EL is a 150-watt, internally-matched FET intended for use in power ampliier applications in the 920 to 960 MHz band.
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PTFA091503EL
PTFA091503EL
150-watt,
H-33288-6
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Untitled
Abstract: No abstract text available
Text: PTFA091201E PTFA091201F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz Description The PTFA091201E and PTFA091201F are 120-watt LDMOS FETs designed for ultra-linear GSM/EDGE power amplifier applications in
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PTFA091201E
PTFA091201F
PTFA091201E
PTFA091201F
120-watt
H-36248-2
H-37248-2
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TRANSISTOR tl131
Abstract: tl239
Text: PTFB082817FH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 280 W, 30 V, 791 – 821 MHz Description The PTFB082817FH is a LDMOS FET intended for use in multistandard cellular power ampliier applications. Features include
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PTFB082817FH
PTFB082817FH
H-34288-4/2
TRANSISTOR tl131
tl239
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C205
Abstract: No abstract text available
Text: PTFB191501E PTFB191501F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 1930 – 1990 MHz Description The PTFB191501E and PTFB191501F are 150-watt LDMOS FETs designed for single- and two-carrier WCDMA and CDMA applications
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PTFB191501E
PTFB191501F
PTFB191501E
PTFB191501F
150-watt
H-36248-2
H-37248-2
C205
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diode z104
Abstract: 3.1v 0.5w ZENER DIODE 1N4148 equivalent SMD
Text: IRAUDAMP12 130W/4 x 2 Channel Class D Audio Power Amplifier Using the IR4301 By Jun Honda, Liwei Zheng CAUTION: International Rectifier suggests the following guidelines for safe operation and handling of IRAUDAMP12 Demo board; • Always wear safety glasses whenever operating Demo Board
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IRAUDAMP12
30W/4
IR4301
IRAUDAMP12
diode z104
3.1v 0.5w ZENER DIODE
1N4148 equivalent SMD
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Untitled
Abstract: No abstract text available
Text: IRAUDAMP5 120W x 2 Channel Class D Audio Power Amplifier Using the IRS2092S and IRF6645 By Jun Honda, Manuel Rodríguez and Jorge Cerezo Fig 1 CAUTION: International Rectifier suggests the following guidelines for safe operation and handling of IRAUDAMP5 Demo Board;
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IRS2092S
IRF6645
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PM554
Abstract: LT1066 3004 IC 74HC273 scr c20d PM5101 pc motherboard schematics 432F
Text: STANDARD PRODUCT PM I PMC-Sierra, Inc. I T# I V h ISSUE 2 PM5543 SARD SONET/SDH 155Mbit/s ADM Reference Desist PM5543 A D M 155 REF SONET/SDH 155 Mbit/s ADD /DRO P MU LT IP LE X OR WITH SINGLE MODE OPTICAL INTERFACE R E F E R E N C E DESIGN SARD I s s ue 2: Jul y, 1 996
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PM5543
155Mbit/s
PMC-951036
PM554
LT1066
3004 IC
74HC273
scr c20d
PM5101
pc motherboard schematics
432F
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