PC1676G
Abstract: PC2713T C1H mmic marking c1j upc2713t marking 331 6pin
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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marking C1C
Abstract: c1j marking transistor marking C2s uPC2713 PC2713T PC1676G c1a c1b c1c uPC2713T-E3 50C24
Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC2713T 5 V, SILICON MMIC VHF-UHF WIDEBAND AMPLIFIER DESCRIPTION The µPC2713T is a silicon monolithic integrated circuit designed as 2nd IF buffer amplifier for DBS tuners. This IC is manufactured using NEC’s 20 GHz fT NESAT
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PC2713T
PC2713T
marking C1C
c1j marking
transistor marking C2s
uPC2713
PC1676G
c1a c1b c1c
uPC2713T-E3
50C24
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mPC2712
Abstract: mPC2712T PC2713T IC-2950 MPC271 mPC2713 C10535E VP15-00-3 mPC2713T C6650
Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT PC2713T 1.2 GHz LOW NOISE WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT FEATURES • High power gain : 29 dB TYP. @ f = 0.5 GHz • Excellent frequency response : 1.2 GHz TYP. @ 3 dB down below the gain at 0.1 GHz
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PC2713T
PC2713T-E3
mPC2712
mPC2712T
PC2713T
IC-2950
MPC271
mPC2713
C10535E
VP15-00-3
mPC2713T
C6650
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT ¿iPC3210TB 5 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER DESCRIPTION The ^¡PC3210TB is a silicon monolithic integrated circuits designed as w ideband amplifier. The ^¡PC3210TB is suitable to system s required w ideband operation from HF to L band.
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iPC3210TB
PC3210TB
WS60-00-1
C10535E)
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Untitled
Abstract: No abstract text available
Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT ¿ iP C 3 2 1 0 T B 5 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER DESCRIPTION The ^¡PC3210TB is a silicon monolithic integrated circuits designed as wideband amplifier. The ^¡PC3210TB is suitable to systems required wideband operation from HF to L band.
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PC3210TB
WS60-00-1
C10535E)
P13593EJ2V0DS00
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Untitled
Abstract: No abstract text available
Text: 1.5 GHz SILICON MMIC WIDE-BAND AMPLIFIER UPC2710T PC2713T FEATURES • FR EQUENCY RESPONSE: 1.5 GHz • HIGH GAIN: 33 dB UPC2710T • SATURATED OUTPUT POWER: +13.5(UPC2710T) m TJ • INTERNAL CURRENT REGULATION MINIMIZES GAIN CHANGE OVER TEMPERATURE Ô . SV SINGLE SUPPLY VOLTAGE
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UPC2710T
UPC2713T
UPC2710T)
UPC2710T-E3
UPC2713T-E3
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Untitled
Abstract: No abstract text available
Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT ¿ iP C 3 2 1 0 T B 5 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER DESCRIPTION The ^¡PC3210TB is a silicon monolithic integrated circuits designed as wideband amplifier. The ^¡PC3210TB is suitable to systems required wideband operation from HF to L band.
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PC3210TB
WS60-00-1
C10535E)
P13959EJ2V0DS00
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Untitled
Abstract: No abstract text available
Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT PC2713T 1.2 GHz LOW NOISE WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT FEATURES • High power gain 29 dB TYP. @ f = 0.5 GHz • Excellent frequency response 1.2 GHz TYP. @ 3 dB down below the gain at 0.1 GHz
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uPC2713T
//PC2713T-E3
P15-00-3
WS60-00-1
C10535E)
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PC2713T
Abstract: 2713T UPC2713T-E3
Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT / / P C 2713T 1.2 GHz LOW NOISE WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT FEATURES • High power gain 29 dB TYP. @ f = 0.5 GHz • Excellent frequency response 1.2 GHz TYP. @ 3 dB down below the gain at 0.1 GHz
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2713T
uPC2713T-E3
P1243
PC2713T
2713T
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PC2713T
Abstract: No abstract text available
Text: 1.5 GHz SILICON MMIC WIDE-BAND AMPLIFIER UPC271OT PC2713T FEATURES_ • FREQUENCY RESPONSE: 1.5 GHz • HIGH GAIN: 33 dB UPC2710T • SATURATED OUTPUT POWER: +13.5 (UPC2710T) • INTERNAL CURRENT REGULATION MINIMIZES GAIN CHANGE OVER TEMPERATURE
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UPC2710T)
UPC271OT
UPC2713T
PC2713T
UPC2710T
UPC2710T-E3
UPC2713T-E3
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