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    UPC2710T Price and Stock

    California Eastern Laboratories (CEL) UPC2710TB-A

    IC AMP CELLULAR 700MHZ-1GHZ 6SO
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    California Eastern Laboratories (CEL) UPC2710TB-E3-A

    IC AMP CELLULAR 700MHZ-1GHZ 6SO
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    California Eastern Laboratories (CEL) UPC2710TB-EVAL

    EVAL BOARD FOR UPC2710TB
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    Mouser Electronics UPC2710TB-EVAL
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    California Eastern Laboratories (CEL) UPC2710TB-EVAL-A

    EVAL BOARD FOR UPC2710TB
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    NEC Electronics Group UPC2710T-E3

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    UPC2710T Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    UPC2710T NEC 1.5 GHz SILICON MMIC WIDE-BAND AMPLIFIER Original PDF
    UPC2710TB California Eastern Laboratories BIPOLAR ANALOG INTEGRATED CIRCUIT Original PDF
    UPC2710TB California Eastern Laboratories 5 V SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER Original PDF
    UPC2710TB NEC 5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER Original PDF
    uPC2710TB NEC RF Amplifier, General purpose amplifier, Single channel, Chip, 1000 MHz Typ, SOT-363, 6-Pin Original PDF
    UPC2710TB-A California Eastern Laboratories RF Amplifiers, RF/IF and RFID, IC MMIC AMP 5V SOT-363 Original PDF
    UPC2710TB-E3 NEC 5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER Original PDF
    uPC2710TB-E3 NEC 5 V, Super Minimold Silicon MMIC Medium Output Power Amplifier Original PDF
    UPC2710TB-E3-A California Eastern Laboratories 5V, SUPER MINIMOLD MEDIUM POWER SI MMIC AMPLIFIER Original PDF
    UPC2710TB-EVAL-A California Eastern Laboratories RF Evaluation and Development Kits, Boards, RF/IF and RFID, EVAL BOARD FOR UPC2710TB Original PDF
    UPC2710T-E3 NEC 1.5 GHz, silicon MMIC wide-band amplifier. Original PDF
    uPC2710T-E3 NEC 5 V, MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER Original PDF

    UPC2710T Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: BIPOLAR ANALOG INTEGRATED CIRCUIT UPC2710TB 5V, SUPER MINIMOLD MEDIUM POWER SI MMIC AMPLIFIER FEATURES 35 • HIGH DENSITY SURFACE MOUNTING: 6 Pin Super Minimold or SOT-363 package • SATURATED OUTPUT POWER: +13.5 dBm • SUPPLY VOLTAGE: VCC = 4.5 to 5.5 V


    Original
    OT-363 UPC2710TB UPC2710TB UPC2710T, UPC2710TB-E3-A 24-Hour PDF

    UPC2710T-E3

    Abstract: UPC2713T UPC2713T-E3 t06 49 uPC2710 UPC2710T t06 93
    Text: 1.5 GHz SILICON MMIC UPC2710T WIDE-BAND AMPLIFIER UPC2713T GAIN vs. FREQUENCY FEATURES • FREQUENCY RESPONSE: 1.5 GHz • SATURATED OUTPUT POWER: +13.5 UPC2710T • INTERNAL CURRENT REGULATION MINIMIZES GAIN CHANGE OVER TEMPERATURE • 5 V SINGLE SUPPLY VOLTAGE


    Original
    UPC2710T UPC2713T UPC2710T) UPC2710T UPC2713T UPC2713T-E3 UPC2710T-E3 UPC2710T-E3 UPC2713T-E3 t06 49 uPC2710 t06 93 PDF

    UPC2710T-E3

    Abstract: uPC2710 UPC2710T
    Text: 1.5 GHz SILICON MMIC UPC2710T WIDE-BAND AMPLIFIER GAIN vs. FREQUENCY FEATURES 35 • FREQUENCY RESPONSE: 1.5 GHz • SATURATED OUTPUT POWER: +13.5 • INTERNAL CURRENT REGULATION MINIMIZES GAIN CHANGE OVER TEMPERATURE • 5 V SINGLE SUPPLY VOLTAGE Gain, GS dB


    Original
    UPC2710T UPC2710T UPC2710T-E3 24-Hour UPC2710T-E3 uPC2710 PDF

    UPC2710TB-E3-A

    Abstract: uPC2710 UPC2710T UPC2710TB
    Text: 5V, SUPER MINIMOLD UPC2710TB MEDIUM POWER SI MMIC AMPLIFIER GAIN vs. FREQUENCY and TEMPERATURE FEATURES 35 • HIGH DENSITY SURFACE MOUNTING: 6 Pin Super Minimold or SOT-363 package VCC = 5.0 V • SATURATED OUTPUT POWER: +13.5 dBm • SUPPLY VOLTAGE: VCC = 4.5 to 5.5 V


    Original
    UPC2710TB OT-363 UPC2710TB UPC2710T, UPC2710TB-E3-A uPC2710 UPC2710T PDF

    Untitled

    Abstract: No abstract text available
    Text: 5V, SUPER MINIMOLD UPC2710TB MEDIUM POWER SI MMIC AMPLIFIER GAIN vs. FREQUENCY and TEMPERATURE FEATURES 35 • HIGH DENSITY SURFACE MOUNTING: 6 Pin Super Minimold or SOT-363 package VCC = 5.0 V • SATURATED OUTPUT POWER: +13.5 dBm • SUPPLY VOLTAGE: VCC = 4.5 to 5.5 V


    Original
    UPC2710TB OT-363 UPC2710T, UPC2710TB-E3 24-Hour PDF

    NE76038

    Abstract: uPC2710 uPC2721 AN1015 UPC2710T UPC2721GR low noise block down converter 1 henry INDUCTOR POWER AMPLIFIER CIRCUIT DIAGRAM 10000 L4* Low noise
    Text: California Eastern Laboratories AN1015 APPLICATION NOTE Low Cost, High Performance Receiver For Wireless Applications INTRODUCTION down converter. The LNA was designed using a discrete low noise GaAs MESFET NE76038 with a matching structure made using discrete components. The NE76038 is fabricated


    Original
    AN1015 NE76038) NE76038 uPC2710 uPC2721 AN1015 UPC2710T UPC2721GR low noise block down converter 1 henry INDUCTOR POWER AMPLIFIER CIRCUIT DIAGRAM 10000 L4* Low noise PDF

    FET marking code g5d

    Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
    Text: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .


    Original
    R09CL0001EJ0100 PX10727EJ02V0PF) FET marking code g5d PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic PDF

    nec mosfet marked v75

    Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


    Original
    G0706 PX10727EJ02V0PF nec mosfet marked v75 NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77 PDF

    PC2710TB

    Abstract: PC3236TK PC3223TB
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


    Original
    PC3236TK TYP48 PU10734JJ01V0DS IR260 WS260 HS350 PC2710TB PC3236TK PC3223TB PDF

    2SK2500

    Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
    Text: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose


    Original
    PDF

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original
    PDF

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original
    P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS PDF

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


    Original
    GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2 PDF

    SMD M05 sot23

    Abstract: NE5531 nE352 A3 smd sot-343 transistor smd m05 SMD transistor M05 transistor smd code 404
    Text: 2013-2014 RF & Wireless Semiconductors P R O D U C T S b y A P P L I C AT I O N California Eastern Laboratories CEL is the exclusive sales and marketing partner in the Americas for products made by the Compound Semiconductor Devices Business Division (CSDBD) of Renesas Electronics Corporation, formerly


    Original
    2013/4M SMD M05 sot23 NE5531 nE352 A3 smd sot-343 transistor smd m05 SMD transistor M05 transistor smd code 404 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1.5 GHz SILICON MMIC WIDE-BAND AMPLIFIER UPC2710T UPC2713T FEATURES • FR EQUENCY RESPONSE: 1.5 GHz • HIGH GAIN: 33 dB UPC2710T • SATURATED OUTPUT POWER: +13.5(UPC2710T) m TJ • INTERNAL CURRENT REGULATION MINIMIZES GAIN CHANGE OVER TEMPERATURE Ô . SV SINGLE SUPPLY VOLTAGE


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    UPC2710T UPC2713T UPC2710T) UPC2710T-E3 UPC2713T-E3 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1.5 GHz SILICON MMIC WIDE-BAND AMPLIFIER UPC2710T UPC2713T FEATURES • FREQUENCY RESPONSE: 1.5 GHz • HIGH GAIN: 33 dB UPC2710T • SATURATED OUTPUT POWER: +13.5 (UPC2710T) • INTERNAL CURRENT REGULATION MINIMIZES GAIN CHANGE OVER TEMPERATURE • 5 V SINGLE SUPPLY VOLTAGE


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    UPC2710T) UPC2710T UPC2713T UPC2710T-E3 UPC2713T-E3 34-6393/FAX PDF

    uPC2710TB

    Abstract: AGS SOT363
    Text: 5V, SUPER MINIMOLD UPC2710TB MEDIUM POWER SI MMIC AMPLIFIER GAIN vs. FREQUENCY FEATURES • HIGH DENSITY SURFACE MOUNTING: 6 Pin Super Minimold or SOT-363 package • HIGH GAIN: 33 dB TYP • SATURATED OUTPUT POWER: +13.5 dBm • SUPPLY VOLTAGE: Vcc = 4.5 to 5.5 V


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    UPC2710TB OT-363 UPC2710T, UPC2710TB-E3 24-Hour AGS SOT363 PDF

    Untitled

    Abstract: No abstract text available
    Text: •K SEC » •xt* ' 1.5 GHz SILICON MMIC WIDE-BAND AMPLIFIER UPC2710T UPC2713T FEATURES_ • FREQUENCY RESPONSE: 1.5 GHz • HIGH GAIN: 33 dB UPC2710T • SATURATED OUTPUT POWER: +13.5 (UPC2710T) • 5 V SINGLE SUPPLY VOLTAGE • SUPER SM ALL PACKAGE


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    UPC2710T UPC2713T UPC2710T) 34-6393/FAX PDF

    PC2713T

    Abstract: No abstract text available
    Text: 1.5 GHz SILICON MMIC WIDE-BAND AMPLIFIER UPC271OT UPC2713T FEATURES_ • FREQUENCY RESPONSE: 1.5 GHz • HIGH GAIN: 33 dB UPC2710T • SATURATED OUTPUT POWER: +13.5 (UPC2710T) • INTERNAL CURRENT REGULATION MINIMIZES GAIN CHANGE OVER TEMPERATURE


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    UPC2710T) UPC271OT UPC2713T PC2713T UPC2710T UPC2710T-E3 UPC2713T-E3 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1.5 GHz SILICON MMIC WIDE-BAND AMPLIFIER UPC2710T UPC2713T FEATURES_ • FREQUENCY RESPONSE: 1.5 GHz • HIGH GAIN: 33 dB UPC2710T • SATURATED OUTPUT POWER: + 13.5(UPC2710T) • INTERNAL CURRENT REGULATION MINIMIZES GAIN CHANGE OVER TEMPERATURE


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    UPC2710T) UPC2710T UPC2713T UPC2710T, UPC2710T/UPC2713T PDF

    SVI 3104 c

    Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
    Text: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or


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    AN83301-1 NE24615 AN83302 AN83303-1 NE71083 NE70083 AN83901 AN85301 11/86-LN AN86104 SVI 3104 c UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720 PDF

    transistor t06

    Abstract: T06 transistor transistor t06 19 2SC 930 AF t06 93 UPC1678B LT 5219 UPC8103T UPC8108T
    Text: Silicon MMIC Selection Guide WIDEBAND AMPLIFIERS Part Number Typ. Fr*q. Range O 3 dB down MHz ELECTRICAL CHARACTERISTICS1 <f*500 MHz, «XC«frt a t noted T a * 25°C.) NF (dB) Icc Vcc (V) (mA) MIN TYP MAX TYP RLin RLout PSAT (dB) (dBm) (dB) ISOL (dB) MAX


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    PDF

    IC/CTC 1351 transistor pin detail

    Abstract: No abstract text available
    Text: DATA SHEET_ BIPOLAR ANALOG INTEGRATED CIRCUIT uPC 2 7 1 0 TB 5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The ^¡PC2710TB is a silicon monolithic integrated circuit designed as PA driver for 900 MHz band cellular


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    PC2710TB PC2710T uPC2710TB uPC2710T WS60-00-1 C10535E) P13443EJ2V0DS00 IC/CTC 1351 transistor pin detail PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT UPC2776T 5 V -B IA S SILICON MMIC AMPLIFIER 2.7 GHz WIDEBAND, 23 dB GAIN, MEDIUM OUTPUT POWER DESCRIPTION ¿¡PC2776T is a silicon m onolithic integrated circuit designed as w ideband, medium output am plifier.


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    UPC2776T PC2776T PC2709T PC2708T/2709T/2710T. VP15-00-3 WS60-00-1 10535EJ7V0IF00) PDF