rdram
Abstract: rimm application of RDRAM PC800
Text: PC1066 RDRAM Operation with i850e Chipset board November , 2002 Product Product Planning Planning & & Application Application Eng. Eng. Team Team The The Leader Leader in in Memory Memory Technology Technology • Max # of PC1066 RDRAM @Intel’s 850e chipset board
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PC1066
i850e
82850/82850e
82850e
PC800
rdram
rimm
application of RDRAM
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samsung roadmap
Abstract: rdram application of RDRAM memory bandwidth
Text: A D VA N C E D M E M O RY S O L U T I O N S Samsung’s RDRAM is the world’s fastest, most efficient memory interface available today, providing 72 controller pins for a single channel. Samsung’s RDRAM is designed for computing, consumer and communication applications that require highly reliable performance memory capabilities.
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1066MHz
512Mb
PC-1066
RDRAM-01
samsung roadmap
rdram
application of RDRAM
memory bandwidth
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DRAM material declaration
Abstract: No abstract text available
Text: MR16R1624 8/G EG0 MR18R1624(8/G)EG0 Change History Version 0.1 (December 2003) - Preliminary * First copy. * Based on the 1.0 ver. (July 2002) 256/288Mbit D-die RIMM Module Datasheet Version 1.0 (May 2004) * Eliminate "Preliminary" Page 0 Version 1.0 May 2004
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MR16R1624
MR18R1624
256/288Mbit
16Mx16)
256Mb
16K/32ms
16Mx18)
288Mb
DRAM material declaration
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diode t29
Abstract: EDR2518ABSE EDR2518ABSE-8C-E T45 to DB9 EDR2518ABSE-8C EDR2518ABSE-AD EDR2518ABSE-AE EDR2518ABSE-AE-E EDR2518ABSE-AEP EDR2518ABSE-AEP-E
Text: PRELIMINARY DATA SHEET 288M bits Direct Rambus DRAM EDR2518ABSE 512K words x 18 bits × 32s banks Description Features The EDR2518AB (Direct RDRAM) is a general purpose high-performance memory device suitable for use in a broad range of applications including
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EDR2518ABSE
EDR2518AB
EDR2518AB
1066MHz
288Mbits
800MHz
9375ns
M01E0107
diode t29
EDR2518ABSE
EDR2518ABSE-8C-E
T45 to DB9
EDR2518ABSE-8C
EDR2518ABSE-AD
EDR2518ABSE-AE
EDR2518ABSE-AE-E
EDR2518ABSE-AEP
EDR2518ABSE-AEP-E
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b58 468
Abstract: B58 608
Text: MR16R1624 8/G EG0 MR18R1624(8/G)EG0 Change History Version 0.1 (December 2003) - Preliminary * First copy. * Based on the 1.0 ver. (July 2002) 256/288Mbit D-die RIMM Module Datasheet Version 1.0 (May 2004) * Eliminate "Preliminary" Page 0 Version 1.0 May 2004
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MR16R1624
MR18R1624
256/288Mbit
16Mx16)
256Mb
16K/32ms
16Mx18)
288Mb
b58 468
B58 608
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pc2-5300
Abstract: elpida 1gb pc2 ECL120ACECN ELPIDA DDR2 PC2-3200 ELPIDA 68-FBGA Elpida DDR2 SDRAM component EDE1104ABSE EDE1108AASE
Text: SELECTION GUIDE DRAM Selection Guide Document No. E0853E70 Ver.7.0 Date Published July 2006 (K) Japan Printed in Japan URL: http://www.elpida.com Elpida Memory, Inc. 2006 DRAM Selection Guide CONTENTS 1. DDR2
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E0853E70
240-pin
200-pin
M01E0107
pc2-5300
elpida 1gb pc2
ECL120ACECN
ELPIDA DDR2
PC2-3200
ELPIDA
68-FBGA
Elpida DDR2 SDRAM component
EDE1104ABSE
EDE1108AASE
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DELTA 632
Abstract: MR16R1622
Text: MR16R1622 4/8/G DF0 MR18R1622(4/8/G)DF0 Change History Version 1.0 (July 2002) * First copy. * Based on the 1.4 ver. (July 2002) 256/288Mbit A-die RIMM Datasheet Page 0 Version 1.0 July 2002 MR16R1622(4/8/G)DF0 MR18R1622(4/8/G)DF0 (16Mx16)*2(4/8/16)pcs RIMMTM Module based on 256Mb D-die, 32s banks,16K/32ms Ref, 2.5V
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MR16R1622
MR18R1622
256/288Mbit
16Mx16)
256Mb
16K/32ms
16Mx18)
288Mb
DELTA 632
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Untitled
Abstract: No abstract text available
Text: MR16R1622 4/8/G DF0 MR18R1622(4/8/G)DF0 Change History Version 1.0 (July 2002) * First copy. * Based on version 1.4 (July 2002) 256/288Mbit A-die base RIMM Datasheet Page 0 Version 1.0 July 2002 MR16R1622(4/8/G)DF0 MR18R1622(4/8/G)DF0 (16Mx16)*2(4/8/16)pcs RIMMTM Module based on 256Mb D-die, 32s banks,16K/32ms Ref, 2.5V
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MR16R1622
MR18R1622
256/288Mbit
16Mx16)
256Mb
16K/32ms
16Mx18)
288Mb
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B58 608
Abstract: marking code B38
Text: MR16R1624 8/G EG0 MR18R1624(8/G)EG0 Preliminary Change History Version 0.1 (December 2003) - Preliminary * First copy. * Based on the 1.0 ver. (July 2002) 256/288Mbit D-die RIMM Module Datasheet Page 0 Version 0.1 Dec. 2003 MR16R1624(8/G)EG0 MR18R1624(8/G)EG0
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MR16R1624
MR18R1624
256/288Mbit
16Mx16)
256Mb
16K/32ms
16Mx18)
288Mb
B58 608
marking code B38
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EDR2518ABSE
Abstract: EDR2518ABSE-8C EDR2518ABSE-AD EDR2518ABSE-AE EDR2518ABSE-AE-E EDR2518ABSE-AEP EDR2518ABSE-AEP-E XOP1
Text: DATA SHEET 288M bits Direct Rambus DRAM EDR2518ABSE 512K words x 18 bits × 32s banks Features The EDR2518AB (Direct RDRAM™) is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other
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EDR2518ABSE
EDR2518AB
EDR2518AB
1066MHz
288Mbits
800MHz
9375ns
EDR2518ABSE
EDR2518ABSE-8C
EDR2518ABSE-AD
EDR2518ABSE-AE
EDR2518ABSE-AE-E
EDR2518ABSE-AEP
EDR2518ABSE-AEP-E
XOP1
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Untitled
Abstract: No abstract text available
Text: DATA SHEET 288M bits Direct Rambus DRAM EDR2518ABSE 512K words x 18 bits × 32s banks Description Features The EDR2518AB (Direct RDRAM) is a general purpose high-performance memory device suitable for use in a broad range of applications including computer
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EDR2518ABSE
EDR2518AB
EDR2518AB
1066MHz
288Mbits
800MHz
9375ns
M01E0107
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Untitled
Abstract: No abstract text available
Text: MR16R1622 4/8/G DF0 MR18R1622(4/8/G)DF0 Change History Version 1.0 (July 2002) * First copy. * Based on version 1.4 (July 2002) 256/288Mbit A-die base RIMM Datasheet Page 0 Version 1.0 July 2002 MR16R1622(4/8/G)DF0 MR18R1622(4/8/G)DF0 (16Mx16)*2(4/8/16)pcs RIMMTM Module based on 256Mb D-die, 32s banks,16K/32ms Ref, 2.5V
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MR16R1622
MR18R1622
256/288Mbit
16Mx16)
256Mb
16K/32ms
16Mx18)
288Mb
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Untitled
Abstract: No abstract text available
Text: DATA SHEET 288M bits Direct Rambus DRAM EDR2518ABSE 512K words x 18 bits × 32s banks Description Features The EDR2518AB (Direct RDRAM) is a general purpose high-performance memory device suitable for use in a broad range of applications including computer
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PDF
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EDR2518ABSE
EDR2518AB
EDR2518AB
1066MHz
288Mbits
800MHz
9375ns
M01E0107
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db34
Abstract: D-A54 DB26 DB52 BE1210 pc800 dram samsung T45 to DB9 RR10a da45
Text: Direct RDRAM DEVICE OPERATION Change History Version 1.11 October 2000 * From Version 1.11, Samsung’s RDRAM Datasheet consists of two parts. - One thing is “Device operation” which is common for all devices and another is “Characteristics description” that accounts for each own
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MR16R1622
Abstract: HOT 624
Text: MR16R1622 4/8/G DF0 MR18R1622(4/8/G)DF0 Change History Version 1.0 (July 2002) * First copy. * Based on the 1.4 ver. (July 2002) 256/288Mbit A-die RIMM Module Datasheet Page 0 Version 1.0 July 2002 MR16R1622(4/8/G)DF0 MR18R1622(4/8/G)DF0 (16Mx16)*2(4/8/16)pcs RIMM Module based on 256Mb D-die, 32s banks,16K/32ms Ref, 2.5V
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MR16R1622
MR18R1622
256/288Mbit
16Mx16)
256Mb
16K/32ms
16Mx18)
288Mb
HOT 624
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GBA ST1
Abstract: 82801BA 82850E 850E intel DOC PC800-45 152364
Text: R Intel 850 Chipset Family: 82850/82850E Memory Controller Hub MCH Datasheet October 2002 Document Number: 290691-004 ® Intel 82850/82850E MCH R INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL® PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY
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82850/82850E
GBA ST1
82801BA
82850E
850E
intel DOC
PC800-45
152364
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET 288M bits Direct Rambus DRAM EDR2518ABSE 512K words x 18 bits × 32s banks Description Features The EDR2518AB (Direct RDRAM) is a general purpose high-performance memory device suitable for use in a broad range of applications including
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PDF
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EDR2518ABSE
EDR2518AB
EDR2518AB
1066MHz
288Mbits
800MHz
9375ns
M01E0107
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RADEON x600
Abstract: RADEON x600 series AHCI RV380 RADEON* x600 ati x600 marvell yukon ATI Radeon RADEON* agp MT16HTF6464AG-53EB2
Text: R Intel 82801FR I/O Controller Hub 6 R ICH6R and Advanced Host Controller Interface Performance Brief October 2004 Document Number: 302648-002 R INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL® PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY
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82801FR
925x/915x)
10/100/1000Base-T
RADEON x600
RADEON x600 series
AHCI
RV380
RADEON* x600
ati x600
marvell yukon
ATI Radeon
RADEON* agp
MT16HTF6464AG-53EB2
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Cross Reference power MOSFET
Abstract: irf 3502 mosfet SD500KD irf3203 mosfet irf equivalent book sem 2106 inverter diagram IFR822 Diode BYW 56 BUZ41 equivalent transistor f630
Text: FAIRCH ILD Power Products Data Book FA IR C H ILD Power Data Book A S chlum berger C om pany 1 9 86/8 7 Power and Discrete Division 1986 Fairchild Semiconductor Corporation Power and Discrete Division 4300 Redwood Highway, San Rafael, CA 94903 415 479-8000 TWX 910-384-4258
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OCR Scan
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PDF
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T0-204AA
T0-204AE
T0-220AB
T0-220AC
Cross Reference power MOSFET
irf 3502 mosfet
SD500KD
irf3203
mosfet irf equivalent book
sem 2106 inverter diagram
IFR822
Diode BYW 56
BUZ41 equivalent
transistor f630
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