Untitled
Abstract: No abstract text available
Text: 32MB 168 PIN PC100 SDRAM DIMM With 4M X16 3.3VOLT TS4MLS64V8Z Description the system clock. Placement The TS4MLS64V8Z is a 4M x 64 bits Synchronous Dynamic RAM high density for PC-100. The TS4MLS64V8Z consists of 4pcs CMOS 4Mx16 bits Synchronous DRAMs in TSOP-II 400mil packages and
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PC100
TS4MLS64V8Z
TS4MLS64V8Z
PC-100.
4Mx16
400mil
168-pin
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PDF
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Untitled
Abstract: No abstract text available
Text: A2675128 16x72 PC133 SDRAM LEGEND Performance Technology A2675128 16x72 PC133 SDRAM FEATURES • PC100 and PC133 compliant • JEDEC-standard 168-pin, dual in-line memory module DIMM • Unbuffered • 128MB ECC • Single +3.3V ±0.3V power supply • Fully synchronous; all signals registered on positive edge of system clock
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A2675128
16x72
PC133
A2675128
PC100
168-pin,
128MB
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PDF
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Untitled
Abstract: No abstract text available
Text: A2709256 32x72 PC133 SDRAM LEGEND Performance Technology A2709256 32x72 PC133 SDRAM FEATURES • PC100 and PC133 compliant • JEDEC-standard 168-pin, dual in-line memory module DIMM • Unbuffered • 256MB ECC • Single +3.3V ±0.3V power supply • Fully synchronous; all signals registered on positive edge of system clock
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A2709256
32x72
PC133
A2709256
PC100
168-pin,
256MB
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PDF
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RC32355
Abstract: AN-302
Text: Connecting the RC32355 to an SDRAM System RC32355 Application Note AN-302 By Paul Snell Notes Revision History June 8, 2001: Initial publication. July 2, 2001: Revised Figure 2, Clock Buffer Connections. Background Revision ZB of The RC32355 does not meet the hold time required by PC100 and PC133 SDRAMs,
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RC32355
AN-302
PC100
PC133
RC32355)
AN-302
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PDF
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HYM7V65801BTFG-10S
Abstract: No abstract text available
Text: 8Mx64 bits PC100 SDRAM Unbuffered DIMM based on 8Mx8 SDRAM with LVTTL, 4 banks & 4K Refresh HYM7V65801B F-Series Preliminary DESCRIPTION The Hyundai HYM7V65801B F-Series are 8Mx64bits Synchronous DRAM Modules composed of eight 8Mx8bit CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin glassepoxy printed circuit board. A 0.33uF and a 0.1uF decoupling capacitors per each SDRAM are mounted on the PCB.
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Original
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8Mx64
PC100
HYM7V65801B
8Mx64bits
400mil
54pin
168pin
64Mbytes
HYM7V65801BTFG-10S
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PDF
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HYM7V65801
Abstract: No abstract text available
Text: 8Mx64 bits PC100 SDRAM SO DIMM based on 4Mx16 SDRAM with LVTTL, 4 banks & 4K Refresh HYM7V65801B Q-Series Preliminary DESCRIPTION The Hyundai HYM7V65801B Q-Series are 8Mx64bits Synchronous DRAM Modules composed of eight 4Mx16bit CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package and 2Kbit EEPROM in 8pin TSSOP package on a 144pin glassepoxy printed circuit board. Three 0.1uF decoupling capacitors per each SDRAM are mounted on the PCB.
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Original
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8Mx64
PC100
4Mx16
HYM7V65801B
8Mx64bits
4Mx16bit
400mil
54pin
144pin
HYM7V65801
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PDF
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HYM7V65401BTRG
Abstract: No abstract text available
Text: 4Mx64 bits PC100 SDRAM Unbuffered DIMM based on 4Mx16 SDRAM with LVTTL, 4 banks & 4K Refresh HYM7V65401B R-Series Preliminary DESCRIPTION The Hyundai HYM7V65401B R-Series are 4Mx64bits Synchronous DRAM Modules composed of four 4Mx16bit CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin glassepoxy printed circuit board. Two 0.33uF and a 0.1uF decoupling capacitors per each SDRAM are mounted on the PCB.
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Original
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4Mx64
PC100
4Mx16
HYM7V65401B
4Mx64bits
4Mx16bit
400mil
54pin
168pin
HYM7V65401BTRG
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PDF
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Untitled
Abstract: No abstract text available
Text: 4Mx64 bits PC100 SDRAM SO DIMM based on 4Mx16 SDRAM with LVTTL, 4 banks & 4K Refresh HYM7V65401B Q-Series Preliminary DESCRIPTION The Hyundai HYM7V65401B Q-Series are 4Mx64bits Synchronous DRAM Modules composed of four 4Mx16bit CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package and 2Kbit EEPROM in 8pin TSSOP package on a 144pin glassepoxy printed circuit board. Three 0.1uF decoupling capacitors per each SDRAM are mounted on the PCB.
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4Mx64
PC100
4Mx16
HYM7V65401B
4Mx64bits
4Mx16bit
400mil
54pin
144pin
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PDF
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pmc connector
Abstract: intel 3101 backplane design cpci Renewal battery CPCI-7070 CPCI-7070-CPTM-04
Text: CPCI-7070 CompactPCI Host Slot Processor Board The CPCI-7070 is specifically designed to add performance, memory and bandwidth to Emerson’s high availability platforms. n CompactPCI host slot processor board n Intel® Pentium® III BGA2 processor n Intel® 440GX chipset
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CPCI-7070
CPCI-7070
440GX
PC100
10/100BaseT
IEEE-1284
32/64-bit
CPCI7070-D2
pmc connector
intel 3101
backplane design cpci
Renewal battery
CPCI-7070-CPTM-04
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PDF
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label infineon lot number
Abstract: HYB39S256400CT-7.5 pc100 gerber
Text: HYS 72Vx3xxGR-8 PC100 Registered SDRAM-Modules 3.3 V 168-pin Registered SDRAM Modules 256 MB, 512 MB & 1 GB Densities • Programmable CAS Latency, Burst Length, and Wrap Sequence Sequential & Interleave • 168-pin JEDEC Standard, Registered 8 Byte Dual-In-Line SDRAM Modules for Server
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72Vx3xxGR-8
PC100
168-pin
100MHz
TSOPII-54
460GX
67MHz
L-DIM-168-37
label infineon lot number
HYB39S256400CT-7.5
pc100 gerber
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PDF
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MO-161
Abstract: TSOP54
Text: HYS 72Vx2xxGR PC100 Registered SDRAM-Modules 3.3 V 168-pin Registered SDRAM Modules 64 MB, 128 MB, 256 MB, 512 MB & 1 GB Densities • 168-pin JEDEC Standard, Registered 8 Byte Dual-In-Line SDRAM Module for PC and Server main memory applications • Auto Refresh CBR and Self Refresh
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72Vx2xxGR
PC100
168-pin
TSOPII-54
TSOP54
MO-161
TSOP54
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PDF
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M464S6453DN0-L7A
Abstract: No abstract text available
Text: PC133/PC100 SODIMM M464S6453DN0 512MB SDRAM MODULE 64Mx64 based on sTSOP2 32Mx8 SDRAM 144pin SODIMM 64bit Non-ECC/Parity Revision 0.0 May 2002 Rev. 0.0 May. 2002 M464S6453DN0 PC133/PC100 SODIMM Revision History Revision 0.0 (May 2002) - First Generation.
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PC133/PC100
M464S6453DN0
512MB
64Mx64
32Mx8
144pin
64bit
M464S6453DN0-L7A
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PDF
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W986416AH
Abstract: W9832AADA
Text: W9832AADA 32MB 4M x 64 PC100 SDRAM MODULE Features • • • • • • • • • • Intel PC SDRAM compalint 168 pins, dual in-line memory module (DIMM) Unbuffered DIMM Auto Refresh and Self Refresh CAS latency: 2 and 3 Burst Length: 1, 2, 4, 8 and full page
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W9832AADA
PC100
cycles/64ms
W9832AADA-8H
W9832AADA-8N
W9832AADA-10
W9832AADA
W986416AH
W986416AH
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PDF
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KM48S8030CT-GH
Abstract: KMM366S823CTY-GH KMM366S823CTY-GL
Text: Preliminary PC100 SDRAM MODULE KMM366S823CTY KMM366S823CTY SDRAM DIMM 8Mx64 SDRAM DIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S823CTY is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung
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PC100
KMM366S823CTY
KMM366S823CTY
8Mx64
400mil
168-pin
KM48S8030CT-GH
KMM366S823CTY-GH
KMM366S823CTY-GL
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PDF
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Untitled
Abstract: No abstract text available
Text: PC133/PC100 µSODIMM M463S1724DN1 16Mx64 SDRAM µSODIMM for sTSOP Revision 0.0 Sept. 2001 Rev. 0.0 Sept. 2001 M463S1724DN1 PC133/PC100 µSODIMM Revision History Revision 0.0 Sept., 2001 Rev. 0.0 Sept. 2001 PC133/PC100 µSODIMM M463S1724DN1 M463S1724DN1 SDRAM µ SODIMM
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PC133/PC100
M463S1724DN1
16Mx64
M463S1724DN1
8Mx16
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PDF
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k4s510832c
Abstract: M464S6453CKS M464S6453CKS-L7A Samsung M464S6453CKS-L7A
Text: M464S6453CKS PC133/PC100 SODIMM Revision History Revision 0.0 Sept. 2001 Rev. 0.0 Sept. 2001 M464S6453CKS PC133/PC100 SODIMM M464S6453CKS SDRAM SODIMM 64Mx64 SDRAM SODIMM based on 64Mx8, 4Banks, 8K Refresh,3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION
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M464S6453CKS
PC133/PC100
M464S6453CKS
64Mx64
64Mx8,
M464S6453CKS-L7A/C7A
144-pin
k4s510832c
M464S6453CKS-L7A
Samsung M464S6453CKS-L7A
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PDF
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Untitled
Abstract: No abstract text available
Text: HYS 72Vx3xxGR-8 PC100 Registered SDRAM-Modules Preliminary Datasheet 3.3 V 168-pin Registered SDRAM Modules 256 MB, 512 MB & 1 GB Densities • Programmable CAS Latency, Burst Length, and Wrap Sequence Sequential & Interleave • 168-pin JEDEC Standard, Registered 8 Byte
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72Vx3xxGR-8
PC100
168-pin
100MHz
TSOPII-54
TSOP54
HYS72V64300GR-8-C2
64Mx72
C1W106112256
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PDF
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SO-DIMM 100-pin
Abstract: JESD65-A dimm 240 pin 100-pin dimm ELPIDA PC2700 PC25300 1gb pc133 SDRAM DIMM JESD65 Micron Designline Vol 8 sodimm ddr2 512mb 667mhz
Text: #78 DDR2: The Next Generation Main Memory By Jimmy Ma Introduction Today’s memory architecture shows significant improvements when compared to the days of Fast Page Mode FPM and Extended Data Out (EDO). The industry has shifted gear from an asynchronous
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PC100
PC133
66MHz
100MHz
133MHz
PC1318/04
PC2-3200/PC24300
PC2700
JESD65-B
SO-DIMM 100-pin
JESD65-A
dimm 240 pin
100-pin dimm
ELPIDA PC2700
PC25300
1gb pc133 SDRAM DIMM
JESD65
Micron Designline Vol 8
sodimm ddr2 512mb 667mhz
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W986408AH
Abstract: W9864BADA
Text: W9864BADA 64MB 8M x 64 PC100 SDRAM MODULE Features • • • • • • • • • • Intel PC SDRAM compalint 168 pins, dual in-line memory module (DIMM) Unbuffered DIMM Auto Refresh and Self Refresh CAS latency: 2 and 3 Burst Length: 1, 2, 4, 8 and full page
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W9864BADA
PC100
cycles/64ms
W9864BADA-8H
W9864BADA-8N
W9864BADA-10
W9864BADA
W986408AH
W986408AH
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PDF
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Samsung M464S6453CKS-L7A
Abstract: m464s64* samsung M464S6453CKS K4S510832C
Text: M464S6453CKS PC133/PC100 SODIMM Revision History Revision 0.0 Sept. 2001 Revision 0.1 (Feb. 2002) - Typo in SPD 127byte corrected This is to advise Samsung customers that, until August 1, 2003, in accordance with certain terms of an agreement, Samsung is prohibited
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M464S6453CKS
PC133/PC100
127byte
100MHz
PC100
PC66/PC100
Samsung M464S6453CKS-L7A
m464s64* samsung
M464S6453CKS
K4S510832C
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PDF
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KMM366S1623CTY-GL
Abstract: KMM366S1623CTY KMM366S1623CTY-GH
Text: Preliminary PC100 SDRAM MODULE KMM366S1623CTY KMM366S1623CTY SDRAM DIMM 16Mx64 SDRAM DIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S1623CTY is a 16M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung
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Original
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PC100
KMM366S1623CTY
KMM366S1623CTY
16Mx64
400mil
168-pin
KMM366S1623CTY-GL
KMM366S1623CTY-GH
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PDF
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Untitled
Abstract: No abstract text available
Text: PC133/PC100 Unbuffered DIMM M366S0924DTS M366S0924DTS SDRAM DIMM 8Mx64 SDRAM DIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M366S0924DTS is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung
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PC133/PC100
M366S0924DTS
M366S0924DTS
8Mx64
8Mx16,
400mil
168-pin
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PDF
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M463S1654CT1-L7A
Abstract: K4S561632C M463S1654CT1 COMMAND K4S561632C-TC k4s561632 date code samsung capacitors samsung capacitance year code
Text: PC100/PC133 µSODIMM M463S1654CT1 16Mx64 SDRAM µSODIMM Revision 0.1 Sept. 2001 Rev. 0.1 Sept. 2001 M463S1654CT1 PC100/PC133 µSODIMM Revision History Revision 0.0 Aug. 2001, Preliminary • First published. Revision 0.1 (Sept. 2001) • Reduced IDD1/4 in DC Characteristics.
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PC100/PC133
M463S1654CT1
16Mx64
100MHz
M463S1654CT1
M463S1654CT1-L7A
K4S561632C
COMMAND
K4S561632C-TC
k4s561632
date code samsung capacitors
samsung capacitance year code
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PDF
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W986416AH
Abstract: W9864AADA
Text: W9864AADA 64MB 8M x 64 PC100 SDRAM MODULE Features • • • • • • • • • • • Intel PC SDRAM compalint 168 pins, dual in-line memory module (DIMM) Two memory rows on this module (Double Bank Module) Unbuffered DIMM Auto Refresh and Self Refresh
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W9864AADA
PC100
cycles/64ms
W9864AADA-8H
W9864AADA-8N
W9864AADA-10
W9864AADA
W986416AH
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PDF
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