MJ-112
Abstract: No abstract text available
Text: FMMJ111 to FMMJ113 S0T23 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTORS PARTMARKING DETAILS: FMMJ111 - C11 FM M J112 - C12 FM M J113 - C13 APPLICATION AREAS: * ANALOG SWITCHES * CHOPPERS * COMMUNICATORS ABSOLUTE MAXIMUM RATINGS at Tamb = 2 5 °C -3 5 V
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S0T23
FMMJ111
FMMJ113
300/is;
MJ-112
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Untitled
Abstract: No abstract text available
Text: SOT23 PNP SILICON PLANAR MEDIUM POWER HIGH PERFORMANCE TRANSISTOR FMMT589 ISSUE 5 - JANUARY 1997_ _ FEATURES * Low equivalent on-resistance; RCE sat 250m£2 at 1A PARTMARKING DETAILS COMPLEMENTARY TYPE- 589 FMMT489 ABSOLUTE MAXIMUM RATINGS.
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FMMT489
FMMT589
-10mA*
-100m
-200m
-500mA,
-100mA,
100MHz
300us.
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FMMT489
Abstract: FMMT549 FMMT589 DSA003698
Text: SOT23 PNP SILICON PLANAR MEDIUM POWER HIGH PERFORMANCE TRANSISTOR FMMT589 ISSUE 5 - JANUARY 1997 ✪ FEATURES * Low equivalent on-resistance; RCE sat 250mΩ at 1A PARTMARKING DETAILS COMPLEMENTARY TYPE - E C 589 FMMT489 B ABSOLUTE MAXIMUM RATINGS. PARAMETER
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FMMT589
FMMT489
-50mA*
-100mA*
-200mA*
-500mA,
-100mA,
100MHz
FMMT549
FMMT489
FMMT589
DSA003698
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ZVN3306F
Abstract: ZVP3306* datasheet GS 393 ZVP3306F DSA003736 3tf5
Text: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN3306F ISSUE 3 – JANUARY 1996 FEATURES * RDS on = 5Ω * 60 Volt VDS COMPLEMENTARY TYPE PARTMARKING DETAIL - S D ZVP3306F MC G SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage
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ZVN3306F
ZVP3306F
800mA
ZVN3306F
ZVP3306* datasheet
GS 393
ZVP3306F
DSA003736
3tf5
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BF620
Abstract: BF621 FMMTA42
Text: SOT89 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR BF620 ISSUE 5 – MARCH 2001 ✪ FEATURES * High breakdown and low saturation voltages APPLICATIONS * Suitable for video output stages in TV sets * Switching power supplies COMPLEMENTARY TYPE: BF621 C E C PARTMARKING DETAIL –
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BF620
BF621
ELE20
100MHz
FMMTA42
BF620
BF621
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bcx5316
Abstract: BCX5616
Text: SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR BCX5616 ISSUE 5 – MARCH 2001 C COMPLEMENTARY TYPE – BCX5316 PARTMARKING DETAIL – BL E C B SOT89 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V CBO 100 V Collector-Emitter Voltage
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BCX5616
BCX5316
500mA,
150mA,
100MHz
bcx5316
BCX5616
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transistor 6CZ
Abstract: BC807 BC817 BC81716 BC81725 BC81740 6Bz transistor
Text: SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 5 – MARCH 2001 PARTMARKING DETAILS BC81716 – 6AZ BC81725 – 6BZ BC81740 – 6CZ ✪ COMPLEMENTARY TYPE – BC807 BC817 E C B SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage
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BC81716
BC81725
BC81740
BC817
BC807
500mA,
100mA,
transistor 6CZ
BC807
BC817
BC81716
BC81725
BC81740
6Bz transistor
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zvp3306f
Abstract: No abstract text available
Text: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 - JANUARY 1996_ ZVN3306F _ FEATURES * R D S o n r 5 Q * 60 Volt VDS COMPLEMENTARY TYPE PARTMARKING DETAIL • ZVP3306F G MC SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage
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ZVN3306F
ZVP3306F
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BCW68GR
Abstract: BCW68HR BCW68GR-5T BCW66 BCW68 BCW68F BCW68FR BCW68G BCW68H
Text: SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR BCW68 ISSUE 5 - MARCH 2001 PARTMARKING DETAILS – BCW68F – BCW68G – BCW68H – DF DG DH BCW68FR – BCW68GR – BCW68HR – 7T 5T 7N E C B COMPLEMENTARY TYPES – BCW66 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER
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BCW68
BCW68F
BCW68G
BCW68H
BCW68FR
BCW68GR
BCW68HR
BCW66
BCW68tance
-10mA
BCW68GR
BCW68HR
BCW68GR-5T
BCW66
BCW68
BCW68F
BCW68FR
BCW68G
BCW68H
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fzt855
Abstract: 100 Amp current 1000 volt diode FZT955 DSA003675
Text: SOT223 NPN SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTOR FZT855 ISSUE 4 - NOVEMBER 2001 ✪ FEATURES * Up to 5 Amps continuous collector current, up to 10 Amp peak C * * Very low saturation voltage Excellent hFE specified up to 10 Amps E PARTMARKING DETAIL COMPLEMENTARY TYPE -
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OT223
FZT855
FZT955
100ms
fzt855
100 Amp current 1000 volt diode
FZT955
DSA003675
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J5486
Abstract: fmmj5484
Text: FMMJ5484 to FMMJ5486 SOT23 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTORS PARTMARKING DETAILS: FM M J5484 - H84 FM M J5485 - H85 FM M J5486 - H86 APPLICATION AREAS: * VHF/UHF AMPLIFIERS ABSOLUTE MAXIMUM RATINGS at Tamb= 2 5°C -2 5 V Gate Drain or G ate-S ource V oltag e Notes
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J5484
J5485
J5486
FMMJ5484
FMMJ5486
400MHz
15Vdc,
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FZT855
Abstract: FZT955 PARTMARKING at sot223 sot223 transistor high performance transistor DSA003717
Text: SOT223 NPN SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTOR FZT855 ISSUE 3 - OCTOBER 1995 ✪ FEATURES * Up to 5 Amps continuous collector current, up to 10 Amp peak * * C Very low saturation voltage Excellent hFE specified up to 10 Amps PARTMARKING DETAIL COMPLEMENTARY TYPE -
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OT223
FZT855
FZT955
FZT855
FZT955
PARTMARKING at sot223
sot223 transistor
high performance transistor
DSA003717
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FMMD914
Abstract: No abstract text available
Text: PAGE NUMBER SOT23 SILICON PLANAR HIGH SPEED SWITCHING DIODE FMMD914 ISSUE 2 - OCTOBER 1995 DIODE PIN CONNECTION PARTMARKING DETAIL - 5D AL 3 5 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT W orking Peak Reverse Voltage V rw m 75 V Average Rectified Forward Current at
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FMMD914
10mAm
100MHz
FMMD914
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ir10 diode
Abstract: diode IR10 FMMD7000 FMMD6050
Text: PAGE NUMBER SOT23 SILICON PLANAR HIGH SPEED FMMD6050 SWrrCHING DIODE ISSUE 2 - OCTOBER 1995 DIODE PIN CONNECTION PARTMARKING DETAIL - 5A AL 3 5 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYM BOL VALUE UNIT V BR 70 V Peak Forward Current If 200 mA Peak Forward Surge Current
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FMMD6050
100mA
FMMD7000
ir10 diode
diode IR10
FMMD6050
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zc sot23
Abstract: ZC2810E
Text: ZC2800E ZC2811E ZC2810E ZC5800E SOT23 SCHOTTKY BARRIER DIODES PIN CONFIGURATION: PARTMARKING DETAILS ZC2800E - E6 ZC2810E - E7 ZC2811E - E8 à^ ZC5800E - E9 ABSOLUTE M A X IM U M RATINGS PARAMETER SYM BO L M a x. P ow er D issipation at Tamb = 2 5 ° C PTOT
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ZC2800E
ZC2811E
ZC2810E
ZC5800E
ZC5800E
2800E
2810E
zc sot23
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VN10LFTA
Abstract: VN10L
Text: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET VN10LF ISSUE 2 – JANUARY 1996 FEATURES * 60 Volt VDS * RDS on =5Ω D PARTMARKING DETAIL – S MY G ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage V DS 60 V Continuous Drain Current at T amb = 25°C
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VN10LF
500mA
200mA
500mA
600mA
ZVN3306F
522-VN10LFTA
VN10LFTA
VN10LFTA
VN10L
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Untitled
Abstract: No abstract text available
Text: BCV71 BCV72 S 0 T 2 3 NPN SILICON PLANAR SMALL SIGNAL TRANSISTOR PARTMARKING DETAILS: BVC71 - K7 BCV72 - K8 BCV71R - K6 BCV72R - K9 ABSOLUTE MAXIMUM RATINGS VALUE UNIT V CBO 80 V V CEO 60 V V EBO 5 V 200 mA PARAMETER SYMBOL Collector-Base Voltage Collector-Emitter Voltage
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BCV71
BCV72
BVC71
BCV72
BCV71R
BCV72R
35MHz
200/j
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J202 equivalent
Abstract: No abstract text available
Text: FMMJ201 to FM M J204 SOT23 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTORS PARTMARKING DETAILS: FMMJ201 FM M J202 FM M J203 FM M J204 - P01 P02 PO3 P 04 ABSOLUTE MAXIMUM RATINGS at Tamb = 2 5°C -40V Gate Drain or Gate-Source Voltage Notes Continous Forward Gate Current
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FMMJ201
J202 equivalent
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MV SOT23
Abstract: BS170F ZVN3306F
Text: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET BS170F ISSUE 3 - JANUARY 1996 FEATURES * 60Volt VDS * RDS ON = 5Ω D S G PARTMARKING DETAIL – MV SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage V DS VALUE UNIT 60 V Continuous Drain Current at T amb=25°C
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BS170F
60Volt
MV SOT23
BS170F
ZVN3306F
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vn10lf
Abstract: ZVN3306F DSS SOT23 D200M DSA003721
Text: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET VN10LF ISSUE 2 – JANUARY 1996 FEATURES * 60 Volt VDS * RDS on =5Ω D PARTMARKING DETAIL – S MY G ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage V DS 60 V Continuous Drain Current at T amb = 25°C
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VN10LF
Voltage10V
500mA
200mA
600mA
ZVN3306F
vn10lf
DSS SOT23
D200M
DSA003721
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MV SOT23
Abstract: BS170F mv BS170F DSS SOT23 ZVN3306F DSA003678
Text: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET BS170F ISSUE 3 - JANUARY 1996 FEATURES * 60Volt VDS * RDS ON = 5Ω D S G PARTMARKING DETAIL – MV SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage V DS VALUE UNIT 60 V Continuous Drain Current at T amb=25°C
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BS170F
60Volt
200mA
600mA
ZVN3306F
MV SOT23
BS170F
mv BS170F
DSS SOT23
DSA003678
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partmarking 5 C
Abstract: ZUMD54 ZUMD54C DSA003730
Text: SOT323 SILICON EPITAXIAL SCHOTTKY BARRIER DIODES ZUMD54 ZUMD54C ISSUE 1– DECEMBER 1998 1 1 3 2 3 ! SINGLE COMMON CATHODE Device Type: ZUMD54 Device Type: ZUMD54C Partmarking Detail: D8 Partmarking Detail: D8C FEATURES: Low VF & High Current Capability
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OT323
ZUMD54
ZUMD54C
100mA
partmarking 5 C
ZUMD54
ZUMD54C
DSA003730
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Untitled
Abstract: No abstract text available
Text: BAV74 Circuit For Measuring Switching Time lF=10mA 0.2|xF Trr1 Pulse is supplied by a generator with the following characteristics: Output is monitored on a sampling oscilloscope with the following characteristics: Output impedance = 50iJ Input impedance = 5012
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BAV74
100ns
100mA
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FMMT4403
Abstract: FMMT4402 DSA003694
Text: FMMT4402 FMMT4403 SWITCHING CHARACTERISTICS at Tamb= 25°C PARAMETER SYMBOL Turn-On Time ton Turn-Off Time t off MIN. MAX. UNIT CONDITIONS 35 ns VCC=-30V, VBE(off)=-2V IC=-150mA, IB1=-15mA (See Fig.1) 255 ns VCC=-30V, IC=-150mA IB1=IB2=-15mA (See Fig. 2)
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FMMT4402
FMMT4403
-150mA,
-15mA
-150mA
FMMT4402
FMMT4403
DSA003694
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