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    ZVN3306F Price and Stock

    Diodes Incorporated ZVN3306FTA

    MOSFET N-CH 60V 150MA SOT23-3
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    DigiKey ZVN3306FTA Reel 21,000 3,000
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    ZVN3306FTA Cut Tape 2,439 1
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    ZVN3306FTA Digi-Reel 1
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    Avnet Americas ZVN3306FTA Reel 8 Weeks 3,000
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    Mouser Electronics ZVN3306FTA 28,580
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    Arrow Electronics ZVN3306FTA 57,000 12 Weeks 3,000
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    Onlinecomponents.com ZVN3306FTA 96,945
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    Bristol Electronics ZVN3306FTA 1,954
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    Quest Components ZVN3306FTA 20
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    Karl Kruse GmbH & Co KG ZVN3306FTA 72,000
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    New Advantage Corporation ZVN3306FTA 87,000 1
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    Diodes Incorporated ZVN3306FTC

    MOSFET N-CH 60V 150MA SOT23-3
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    DigiKey ZVN3306FTC Reel 10,000
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    Zetex / Diodes Inc ZVN3306FTA

    Trans MOSFET N-CH 60V 0.15A 3-Pin SOT-23 T/R
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    Verical ZVN3306FTA 366,000 3,000
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    ZVN3306FTA 57,000 3,000
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    Quest Components ZVN3306FTA 474
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    ComSIT USA ZVN3306FTA 2,555
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    Others ZVN3306FCT

    MOSFET Transistor, N-Channel, SOT-23
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    Quest Components ZVN3306FCT 570
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    Zetex / Diodes Inc ZVN3306F

    MOSFET N-CH 60V 150MA SOT23-3
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    New Advantage Corporation ZVN3306F 1,004 1
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    ZVN3306F Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Type PDF
    ZVN3306F Diodes SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET Original PDF
    ZVN3306F Zetex Semiconductors SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET Original PDF
    ZVN3306F Unknown Shortform Datasheet & Cross References Data Short Form PDF
    ZVN3306F Unknown FET Data Book Scan PDF
    ZVN3306F Zetex Semiconductors N-Channel Enhancement Mode Vertical DMOS FET Scan PDF
    ZVN3306F Zetex Semiconductors Quick Reference Guide (Discrete Semiconductors) 1991 Scan PDF
    ZVN3306FTA Zetex Semiconductors MOSFET, SOT23 N-Channel Enhancement Mode Vertical DMOS FET, Tape and Reel Original PDF
    ZVN3306FTC Zetex Semiconductors FETs - Single, Discrete Semiconductor Products, MOSFET N-CHAN 60V SOT23-3 Original PDF

    ZVN3306F Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ZVN3306F

    Abstract: ZVP3306* datasheet GS 393 ZVP3306F DSA003736 3tf5
    Text: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN3306F ISSUE 3 – JANUARY 1996 FEATURES * RDS on = 5Ω * 60 Volt VDS COMPLEMENTARY TYPE PARTMARKING DETAIL - S D ZVP3306F MC G SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage


    Original     		PDF ZVN3306F ZVP3306F 800mA ZVN3306F ZVP3306* datasheet GS 393 ZVP3306F DSA003736 3tf5

    w2s sot23

    Abstract: ML SOT23 FET SOT23 60V ZVN3306F ZVP3306F
    Text: SOT23 P-CHANNEL ENHANCEMENT ZVP3306F MODE VERTICAL DMOS FET ISSUE 3- JANUARY I L 1996 FEATURES . 60 Volt Vr>s . Ro;, ,=14 2 s D PARTMA13KING DETAIL COMPLEMENTARY - ML G TYPE - ZVN3306F SOT23 ABSOLUTE MAXIMUM _ RATINGS. PARAMETER [Drain — Sc, urce (;ontl~luuus


    Original     		PDF ZVP3306F PARTMA13KING ZVN3306F w2s sot23 ML SOT23 FET SOT23 60V ZVN3306F ZVP3306F

    Untitled

    Abstract: No abstract text available
    Text: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN3306F ISSUE 3 – JANUARY 1996 FEATURES * RDS on = 5Ω * 60 Volt VDS COMPLEMENTARY TYPE PARTMARKING DETAIL - S D ZVP3306F MC G SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage


    Original     		PDF ZVN3306F ZVP3306F 800mA

    Untitled

    Abstract: No abstract text available
    Text: ZVN3306F Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V) I(D) Max. (A)150m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)250m Minimum Operating Temp (øC)


    Original     		PDF ZVN3306F

    Untitled

    Abstract: No abstract text available
    Text: SOT23 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET GS -1.0 -10 -8 -6 -0.6 -4 -0.4 ISSUE 3 – JANUARY 1996 FEATURES * 60 Volt VDS * RDS on =14Ω D S PARTMARKING DETAIL – ML COMPLEMENTARY TYPE – ZVN3306F -0.8 D= ZVP3306F G SOT23 ABSOLUTE MAXIMUM RATINGS.


    Original     		PDF ZVN3306F ZVP3306F -100mA

    VN10LFTA

    Abstract: VN10L
    Text: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET VN10LF ISSUE 2 – JANUARY 1996 FEATURES * 60 Volt VDS * RDS on =5Ω D PARTMARKING DETAIL – S MY G ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage V DS 60 V Continuous Drain Current at T amb = 25°C


    Original     		PDF VN10LF 500mA 200mA 500mA 600mA ZVN3306F 522-VN10LFTA VN10LFTA VN10LFTA VN10L

    12v 50W AUDIO AMPLIFIER CIRCUIT DIAGRAM

    Abstract: Capacitor X7R 100n 50V 1206 zener smd diode 16v 1w uCapacitor X7R 100n 50V 1206u class D audio power amplifier phillips 12v 50W AUDIO AMPLIFIER CIRCUIT DIAGRAM NO USED IC 22u smd capacitor 1u 63V BTL audio 50W pot 100K smd
    Text: ZXCD50STEVAL 50W CLASS D AUDIO AMPLIFIER EVALUATION BOARD DESCRIPTION FEATURES • Stereo The ZXCD50STEVAL evaluation board is based on the ZXCD1000 Class D audio amplifier solution from Zetex. This board allows the user to evaluate the high fidelity audio performance offered by the Zetex solution, with


    Original     		PDF ZXCD50STEVAL ZXCD50STEVAL ZXCD1000 12v 50W AUDIO AMPLIFIER CIRCUIT DIAGRAM Capacitor X7R 100n 50V 1206 zener smd diode 16v 1w uCapacitor X7R 100n 50V 1206u class D audio power amplifier phillips 12v 50W AUDIO AMPLIFIER CIRCUIT DIAGRAM NO USED IC 22u smd capacitor 1u 63V BTL audio 50W pot 100K smd

    electric capacitor 330uF 25V

    Abstract: S14814DY wurth 744 liteon ltst-c170gkt C1005X7R1H102 C0402C102K5RAC C0402C105K9PAC FDMS8690 C1608X7R1E104K C3225X7R1E106M
    Text: 19-0688; Rev 1; 1/10 MAX8792 Evaluation Kit The MAX8792 evaluation kit EV kit demonstrates the standard 10A application circuit of the MAX8792. This DC-DC converter steps down high-voltage batteries to generate low-voltage core or chipset/RAM bias supplies in notebook computers.


    Original     		PDF MAX8792 MAX8792. 300kHz MAX8792 electric capacitor 330uF 25V S14814DY wurth 744 liteon ltst-c170gkt C1005X7R1H102 C0402C102K5RAC C0402C105K9PAC FDMS8690 C1608X7R1E104K C3225X7R1E106M

    smd code book

    Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
    Text: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ


    Original     		PDF OD-80 OD123/323 OT-23, OT346 OT-323, OT-416 OT-223, OT-89 OT-143, OT-363 smd code book transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    mosfet cross reference

    Abstract: pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode
    Text: Selector Guides Selector Guides MOSFETs The Supertex enhancement-mode and depletion-mode MOSFET families utilize both vertical and lateral double diffused MOS processes. They feature low parasitic capacitances with interdigitated structures for high-frequency operation. Their low gate threshold voltage is


    Original     		PDF T0-92 options4206A ZVN4206C ZVN4206E ZVN4306A TN2106K1 VN2210N3 TN0606N3 TN0606N6 mosfet cross reference pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


    Original     		PDF GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor

    2n3906 equivalent

    Abstract: 1n4150 equivalent 4803 so-8 transistor 2N3906 smd 2A SOT23 2N7002 equivalent mosfet 4805 MAX1647 MAX1647EAP MAX1648 MAX1648ESE
    Text: 19-1158; Rev 1; 12/02 Chemistry-Independent Battery Chargers The MAX1647 is available in a 20-pin SSOP with a 2mm profile height. The MAX1648 is available in a 16-pin SO package. _Applications Notebook Computers Personal Digital Assistants


    Original     		PDF MAX1647 20-pin MAX1648 16-pin MAX1647) 11-Bit 10-Bit MAX1647/MAX1648 2n3906 equivalent 1n4150 equivalent 4803 so-8 transistor 2N3906 smd 2A SOT23 2N7002 equivalent mosfet 4805 MAX1647EAP MAX1648ESE

    zvp3306f

    Abstract: No abstract text available
    Text: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 - JANUARY 1996_ ZVN3306F _ FEATURES * R D S o n r 5 Q * 60 Volt VDS COMPLEMENTARY TYPE PARTMARKING DETAIL • ZVP3306F G MC SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage


    OCR Scan     		PDF ZVN3306F ZVP3306F

    Untitled

    Abstract: No abstract text available
    Text: SOT23 P-CHANNEL ENHANCEMENT MODE VERTICAL D M O S FET ZVP3306F ISSUE 3 -JAN UARY 1996 FEATURES * 60 V o lt Vos * Rosionr1^ s PARTM ARKING DETAIL - M L g CO M PLEM ENTAR Y TYPE - ZVN3306F SOT23 ABSOLUTE M A X IM U M RATINGS. PARAMETER SYM BO L D ra in -S o u rc e V o lta g e


    OCR Scan     		PDF ZVP3306F ZVN3306F

    ZVN3306F

    Abstract: TR47 TR-47 NS80-MA
    Text: ZVN3306F SOT23 N CHANNEL ENHANCEMENT MODE VERTICAL D M O S FET P A R T M A R K IN G DETAIL - ZVN3306F - M C ABSOLUTE MAXIMUM RATINGS PARAMETER SYM BOL Drain-Source Voltage Continuous Drain Current @ Tam b=25‘C Pulsed Drain Current Gate-Source Voltage M a x Power Dissipation @ Tamb=25‘C


    OCR Scan     		PDF ZVN3306F DS370 TR47 TR-47 NS80-MA

    Untitled

    Abstract: No abstract text available
    Text: PLESSEY SEMICOND/DISCRETE cFjjj 7220533 □□Db732 2 03 T N-channel enhancement mode vertical DMOS FET - ZVN3306F ABSO LUTE M A X IM U M RATINGS Sym bol Parameter U nit 60 V 'd 0 .1 5 A 3 A ±20 V CO o > D rain-source vo lta ge S O T-23 C o n tin uo u s drain c u rre n t at T A = 2 5 °C


    OCR Scan     		PDF Db732 ZVN3306F 3306F 72SDS33 0DDb73b 000b737

    Untitled

    Abstract: No abstract text available
    Text: SOT23 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 -JANUARY 1996 ZVP3306F _ _ FEATURES * 60 V olt V DS * R DS on = 1 4 f l PARTMARKING DETAIL - ML COMPLEMENTARY TYPE - ZVN3306F SOT23 ABSOLUTE MAXIMUM RATINGS. SYMBOL Drain-Source Voltage


    OCR Scan     		PDF ZVP3306F ZVN3306F

    Untitled

    Abstract: No abstract text available
    Text: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL D M O S FET VN10LF ISSUE 2 - JANUARY 1996_ FEATURES * 60 Volt V DS * R DS,0n =5 ^ P A R T M A R K IN G D ETA IL - MY ABSOLUTE M AXIM UM RATINGS. PARAM ETER SYM BO L Drain-Source Voltage V DS 60


    OCR Scan     		PDF VN10LF 300ns. ZVN3306F

    Untitled

    Abstract: No abstract text available
    Text: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL D M O S FET ISSUE 3 -JANUARY 1996_ FEATURES * 60 Vo It V DS * ^DS ON = P A R T M A R K IN G D ET A IL - M V ABSOLUTE M A X IM U M RATINGS. PARAM ETER SYM BO L D rain-Source Voltage v DS C ontinuous Drain Current at Tam^ 25 ° C


    OCR Scan     		PDF 300ns. ZVN3306F

    2n3906 equivalent

    Abstract: ITE 8500 Ax 1023a 12V lead acid battery
    Text: 19-1153; Rev 0; 12/96 A M X I A I Chemi st ry-I independent B a t t e r y Chargers _F e a t u r e s The M AX1647/M AX1648 provide the po w e r control neces­ sary to cha rge batteries of any chem istry. In the MAX1647, all charging functions are controlled via the Intel System


    OCR Scan     		PDF AX1647/M AX1648 MAX1647, AX1647 MAX1648 2n3906 equivalent ITE 8500 Ax 1023a 12V lead acid battery

    ferranti

    Abstract: ZVN2210L ZVN3306B ZVN3310B ZVH2224B ZVN2220L ZVN2224L ZVN2535B ZVN3206L ZVN3210L
    Text: - 246 - f §y s tt € A X t Vos or i Vdg * V Vg s (V) Ig s s Id Pi> * /CH * /CH (A) m M $ ÎS (Ta=25^) Vg s (V) Vd s (V) ( M A) (V) (V) («A) Ciss g fs Coss Crss & & m n V g s -0 (max) *typ V g s (V) (0 ) D (Ta=25tC) lo(on) FDs(on) Vd s = Vg s max min (nA)


    OCR Scan     		PDF ZVN2210L O-220 ZVN2220L ZVP012O8 ZVP0120L ZVP0535A ZVP0535B ZVP0535L ferranti ZVN3306B ZVN3310B ZVH2224B ZVN2224L ZVN2535B ZVN3206L ZVN3210L

    ZVN3306

    Abstract: ZETB ZVN3306A ZVN3306B ZVN3306E ZVN3306F F150 SOT23 5 ZVN33 a/ZVN3306
    Text: bOE P ^70570 • N-Channel enhancement mode vertical DMOS FET 0 0 0 7 Ô5 1 017 I I Z E T B Z ET EX SEMICONDUCTORS ZVN3306 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability • High input impedance


    OCR Scan     		PDF ZVN3306 ZVN3306A ZVN3306B ZVN3306F 01234567B910 F-154 TT7057Ã 9/DERATING/8/86 F-155 ZVN3306 ZETB ZVN3306E F150 SOT23 5 ZVN33 a/ZVN3306