MJ-112
Abstract: No abstract text available
Text: FMMJ111 to FMMJ113 S0T23 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTORS PARTMARKING DETAILS: FMMJ111 - C11 FM M J112 - C12 FM M J113 - C13 APPLICATION AREAS: * ANALOG SWITCHES * CHOPPERS * COMMUNICATORS ABSOLUTE MAXIMUM RATINGS at Tamb = 2 5 °C -3 5 V
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OCR Scan
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S0T23
FMMJ111
FMMJ113
300/is;
MJ-112
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MJ-112
Abstract: FMMJ112 FMMJ111
Text: S0T23 N-CHANNEL SILICON JUN CTIO N FIELD EFFECT TRANSISTORS PARTMARKING DETAILS: FMMJ 1 1 1 - C11 FMMJ1 12 - C12 FMMJ 11 3 - C13 APPLICATION AREAS: * ANALOG SWITCHES * CHOPPERS * COMMUNICATORS ABSOLUTE M AXIM UM RATINGS at Tamb = 25°C -3 5 V Gate Drain or G ate-S ource V oltage Notes
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OCR Scan
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S0T23
MJ-112
FMMJ112
FMMJ111
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bss170
Abstract: No abstract text available
Text: SOT23 'If SMALL SIGNAL MOSFETS SOTFETs Pinout : 1-Drain, 2-Source, 3-Gate Type b mA BV qss V !DM A PD mW V GE;<th) M in/M ax at lD V mA RDS(on) a at Max mA to V GS V 10 N-CHANNEl ZVN3320F 200 60 1.0 330 1.0/3.0 1.0 25.0 100 BSS123 100 170 0.68 360 0.8/2.8
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OCR Scan
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ZVN3320F
BSS123
BSS123A
ZVN3310F
BST82
ZVN4106F
ZVN3306F
FMMJ4391
FMMJ4392
FMMJ4393
bss170
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bss170
Abstract: BSS170F MJ174
Text: SOT23 SM ALL SIGNAL M O SFETS SO TFETs '• Pinout : 1-Drain, 2-Source, 3-Gate Type BV q s s V !d mA !dm A PD mW R DS(on) VGS><th) Min/Max at lD mA V £2 at Max •d mA V GS V 10 N-CHANNEL; ZVN3320F 200 60 1.0 330 1.0/3.0 1.0 25.0 100 BSS123 100 170 0.68
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OCR Scan
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ZVN3320F
BSS123
BSS123A
ZVN3310F
BST82
ZVN4106F
ZVN3306F
2N7002
VN10LF
BSS170F
bss170
MJ174
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