15514
Abstract: No abstract text available
Text: SiB410DK_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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SiB410DK
AN609,
8029u
6830m
5384m
0019m
0110u
9058u
5505u
15514
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Untitled
Abstract: No abstract text available
Text: IRFZ44S_RC, IRFZ44L_RC, SiHFZ44S_RC, SiHFZ44LL_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter
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IRFZ44S
IRFZ44L
SiHFZ44S
SiHFZ44LL
AN609,
THERMAZ44S
9021m
9076m
0860m
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Untitled
Abstract: No abstract text available
Text: IRFP21N60L_RC, SiHFP21N60L_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter
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IRFP21N60L
SiHFP21N60L
AN609,
07-Jun-10
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Untitled
Abstract: No abstract text available
Text: IRFIBC40G_RC, SiHFIBC40G_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter
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IRFIBC40G
SiHFIBC40G
AN609,
31-May-10
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si5429
Abstract: No abstract text available
Text: Si5429DU_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter
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Si5429DU
AN609,
5457m
6672m
2405m
2799m
3397m
0804m
0570u
4741u
si5429
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si2366
Abstract: No abstract text available
Text: Si2366DS_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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Si2366DS
AN609,
J2523
4374u
1469m
9180m
0805u
5327u
7530m
0215u
si2366
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Untitled
Abstract: No abstract text available
Text: IRFD014_RC, SiHFD014_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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IRFD014
SiHFD014
AN609,
CONFIGURA5-Oct-10
3009m
0416u
6348m
9120m
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Untitled
Abstract: No abstract text available
Text: IRLR024_RC, IRLU024_RC, SiHLR024_RC, SiHLU024_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter
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IRLR024
IRLU024
SiHLR024
SiHLU024
AN609,
9731m
2316m
0467m
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Untitled
Abstract: No abstract text available
Text: Si4202DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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Si4202DY
AN609,
2175m
2923m
2439m
3089u
1542m
7069m
8017m
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Untitled
Abstract: No abstract text available
Text: IRFZ48R_RC, SiHFZ48R_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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IRFZ48R
SiHFZ48R
AN609,
6055m
9011m
2958m
1718m
3035m
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14093
Abstract: 75431
Text: Si9945BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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Si9945BDY
AN609,
3203u
3659m
8029m
3567u
2443m
3998m
0795m
14093
75431
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Untitled
Abstract: No abstract text available
Text: Product Brief 150mA EXTREMELY LOW NOISE LDO REGULATOR Description Parametric Table The AP2121 series are positive voltage regulator ICs designed by CMOS process. Each of these ICs consists of a voltage reference, an error amplifier, a resistor network for setting output voltage, a current limit circuit for current protection and a chip enable circuit 5-pin products
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150mA
AP2121
AP2121
100mA:
150mV
70desistor
AP2121AK-3
OT-23-3
OT-23-5
125oC
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A18 MARKING soic8
Abstract: No abstract text available
Text: Product Brief WIDE BANDWIDTH DUAL BIPOLAR OPERATIONAL AMPLIFIERS Description AZ4559 Parametric Table The AZ4559 consists of two high performance operational amplifiers. The IC features high gain, low equivalent input noise voltage, excellent channel separation, wide range of
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AZ4559
AZ4559
100kHz
AZ4559MTR
AZ4559MTR-E1
4559M
4559M-E1
AZ4559P
AZ4559P-E1
A18 MARKING soic8
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LA 7805
Abstract: 7805 TO252 AZ7805D-E1 AZ7805D 7805
Text: Product Brief 3-TERMINAL POSITIVE LINEAR REGULATORS Description AZ78XX Parametric Table The AZ78XX series are monolithic integrated circuits designed as fixed-voltage regulators for a wide variety of applications including local, on-card regulation. This series of regulators are complete with internal current
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AZ78XX
AZ78XX
AZ7812T
AZ7805D-E1
AZ7805DTR
O-252
AZ7812T-E1
AZ7805D
AZ7812DTR-E1
AZ7812D
LA 7805
7805 TO252
AZ7805D-E1
AZ7805D
7805
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d5611
Abstract: CD4512BMS
Text: CD4512BMS CMOS Dual 4-Bit Latch December 1992 Features Pinout • High-Voltage Types 20-Volt Rating CD4512BMS TOP VIEW • 3-State Outputs • Standardized, Symmetrical Output Characteristics • 100% Tested for Quiescent Current at 20V • 5V, 10V, and 15V Parametric Ratings
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CD4512BMS
20-Volt
100nA
d5611
CD4512BMS
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BUL791
Abstract: No abstract text available
Text: BUL791 NPN SILICON POWER TRANSISTOR ● Designed Specifically for High Frequency Electronic Ballasts up to 125 W ● hFE 6 to 22 at VCE = 1 V, IC = 2 A ● Low Power Losses On-state and Switching ● Key Parameters Characterised at High Temperature ● Tight and Reproducible Parametric
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BUL791
O-220
L791CFB
L791CRB
BUL791
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MGFC5212
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs MMIC> PRELIMINARY MGFC5212 Notice : This is not a final specification Some parametric limits are subject to change. K-Band 2-Stage Power Amplifier DESCRIPTION BLOCK DIAGRAM The MGFC5212 is a GaAs MMIC chip especially designed for 24.5 ~ 26.5 GHz band High
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MGFC5212
MGFC5212
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AC97
Abstract: STA304A STA500 TQFP44
Text: STA304A DIGITAL AUDIO PROCESSOR WITH MULTICHANNEL DDX PRODUCT PREVIEW • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ STA304AEND TO END DIGITAL AUDIO INTEGRATED SOLUTION • DSP Functions: - DIGITAL VOLUME CONTROL - SOFT MUTE - BASS and TREBLE - PARAMETRIC EQ PER CHANNEL
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STA304A
STA304AEND
AC97
STA304A
STA500
TQFP44
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K 1358 fet transistor
Abstract: FET K 1358 MGFC4419G C 4804 transistor MGFC4419 GaAs FET HEMT Chips GaAs FET chip 581
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC4419G PRELIMINARY Notice : This is not a final specification Some parametric limits are subject to change. InGaAs HEMT Chip DESCRIPTION OUTLINE DRAWING The MGFC4419G low-noise HEMT High electron Mobility Transistor is designed for use in X to K band amplifiers.
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MGFC4419G
MGFC4419G
12GHz
K 1358 fet transistor
FET K 1358
C 4804 transistor
MGFC4419
GaAs FET HEMT Chips
GaAs FET chip 581
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HCF4007UB
Abstract: HCF4007UBEY HCF4007UBM1 HCF4007UM013TR
Text: HCF4007UB DUAL COMPLEMENTARY PAIR PLUS INVERTER • ■ ■ ■ ■ ■ ■ STANDARDIZED SYMMETRICAL OUTPUT CHARACTERISTICS MEDIUM SPEED OPERATION tPD = 30ns Typ. AT 10V QUIESCENT CURRENT SPECIFIED UP TO 20V 5V, 10V AND 15V PARAMETRIC RATINGS INPUT LEAKAGE CURRENT
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HCF4007UB
100nA
JESD13B
HCF4007UB
HCF4007UBEY
HCF4007UBM1
HCF4007UM013TR
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HCF4002B
Abstract: HCF4002BEY HCF4002BM1 HCF4002M013TR
Text: HCF4002B DUAL 4-INPUT NOR GATE • ■ ■ ■ ■ ■ ■ ■ PROPAGATION DELAY TIME : tPD = 50ns TYP. at VDD = 10V CL = 50pF BUFFERED INPUTS AND OUTPUTS STANDARDIZED SYMMETRICAL OUTPUT CHARACTERISTICS QUIESCENT CURRENT SPECIFIED UP TO 20V 5V, 10V AND 15V PARAMETRIC RATINGS
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HCF4002B
100nA
JESD13B
HCF4002B
HCF4002BEY
HCF4002BM1
HCF4002M013TR
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2N7227
Abstract: SV400
Text: Tem ic 2N7227JANTX/JANTXV Siliconix N-Channel Enhancement-Mode Transistors Product Summary V D S V r DS(on) (Q ) I d (A) 400 0.415 14 Parametric limits in accordance with M 1I.-S-19500I592 where applicable. TO-254AA H erm etic Package o G 0 - It Case Isolated
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2N7227JANTX/JANTXV
-S-19500I592
O-254AA
1503C)
p-37164--Rev.
2N7227
SV400
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Untitled
Abstract: No abstract text available
Text: V C l / i i r O / 'U 5r/Vtnur 100K INTERFACE s ta n d a rd s p e c ific a tio n s b U P E H -3 0 0 K S E M IC O N D U C T O R DC characteristics for the 100K parametric limits listed below are guaranteed for the entire SUPFR-SOO/Oamily unless specified on
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Untitled
Abstract: No abstract text available
Text: Tem ic 2N6851 Siliconix P-Channel Enhancement-Mode Transistor Product Summary V BR DSS (V) -200 TDS(on) (ß ) 0.80 I d (A) -4.0 Parametric limits in accordance with M1L-S-19500I564 where applicable. T 0-205A F (TO-39) Ô D P-Channel MOSFF.T Absolute Maximum Ratings (Tc = 25°C Unless Otherwise Noted)
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2N6851
M1L-S-19500I564
1503C)
P-37010--
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