k 3918 TRANSISTOR
Abstract: pin diagram of bf 494 transistor 7497 spice smd transistor 501 smd transistors 458 transistor 381 7943 RF NPN POWER TRANSISTOR C 10-12 GHZ BFG21W PMBT3904 09 18 140 9622
Text: Philips Semiconductors 800MHz PA Driver with BFG21W 800MHz PA Driver with BFG21W Application Note JL-9803v2 Author Jarek Lucek November 8, 1998 Discrete Semiconductors - Mansfield 171 Forbes Blvd. Mansfield, MA 02048 Abstract th BFG21W, the new 5 generation transistor from Philips Semiconductors, is well suited for PA driver
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800MHz
BFG21W
JL-9803v2
BFG21W,
BFG21W
800MHz,
25dBm,
k 3918 TRANSISTOR
pin diagram of bf 494 transistor
7497 spice
smd transistor 501
smd transistors 458
transistor 381 7943
RF NPN POWER TRANSISTOR C 10-12 GHZ
PMBT3904
09 18 140 9622
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Decoupling capacitor philips
Abstract: 4066 spice model BFG480W 4405 smd ATC100A BFG80W PMBT3904 BFG-80 bfg8
Text: Philips Semiconductors 1880 MHz PA Driver with BFG480W 1880 MHz PA Driver with BFG480W Application Note JL-9902v0 Author Jarek Lucek June 1, 1999 Discrete Semiconductors - Mansfield 171 Forbes Blvd. Mansfield, MA 02048 Abstract th BFG480W, the new 5 generation transistor from Philips Semiconductors, is well suited for PA driver applications
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BFG480W
JL-9902v0
BFG480W,
BFG80W
20dBm,
BFG480W
Decoupling capacitor philips
4066 spice model
4405 smd
ATC100A
PMBT3904
BFG-80
bfg8
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atc100a
Abstract: JL 1500 3.6v 9901v Philips capacitor 116 RF NPN POWER TRANSISTOR C 10-12 GHZ BFG21W PMBT3904 TDMA POWER 5509
Text: Philips Semiconductors 1880 MHz PA Driver with BFG21W 1880 MHz PA Driver with BFG21W Application Note JL-9901v0 Author Jarek Lucek April 9, 1999 Discrete Semiconductors - Mansfield 171 Forbes Blvd. Mansfield, MA 02048 Abstract th BFG21W, the new 5 generation transistor from Philips Semiconductors, is well suited for PA driver applications in
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BFG21W
JL-9901v0
BFG21W,
BFG21W
24dBm,
7E-12
99E-13
atc100a
JL 1500 3.6v
9901v
Philips capacitor 116
RF NPN POWER TRANSISTOR C 10-12 GHZ
PMBT3904
TDMA POWER 5509
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PHPT60603NY
Abstract: No abstract text available
Text: LF PA K 56 PHPT60603NY 60V, 3 A NPN high power bipolar transistor 13 December 2013 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT60603PY
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PHPT60603NY
OT669
LFPAK56)
PHPT60603PY
AECQ-101
PHPT60603NY
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Untitled
Abstract: No abstract text available
Text: LF PA K 56 PHPT61003PY 100 V, 3A PNP high power bipolar transistor 13 January 2014 Product data sheet 1. General description PNP high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT61003NY
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PHPT61003PY
OT669
LFPAK56)
PHPT61003NY
AEC-Q101
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sot669 footprint
Abstract: No abstract text available
Text: LF PA K 56 PHPT60603NY 60V, 3 A NPN high power bipolar transistor 10 January 2014 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT60603PY
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PHPT60603NY
OT669
LFPAK56)
PHPT60603PY
AECQ-101
sot669 footprint
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Untitled
Abstract: No abstract text available
Text: LF PA K 56 PHPT61002NYC 100V, 2 A NPN high power bipolar transistor 9 January 2014 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT61002PYC
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PHPT61002NYC
OT669
LFPAK56)
PHPT61002PYC
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Untitled
Abstract: No abstract text available
Text: LF PA K 56 PHPT60603PY 60 V, 3 A PNP high power bipolar transistor 13 January 2014 Product data sheet 1. General description PNP high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT60603NY.
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PHPT60603PY
OT669
LFPAK56)
PHPT60603NY.
AEC-Q101
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Untitled
Abstract: No abstract text available
Text: LF PA K 56 PHPT61003NY 100 V, 3 A NPN high power bipolar transistor 13 January 2014 Product data sheet 1. General description PNP high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT61003NY
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PHPT61003NY
OT669
LFPAK56)
AEC-Q101
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sot669 footprint
Abstract: No abstract text available
Text: LF PA K 56 PHPT61003NY 100 V, 3 A NPN high power bipolar transistor 13 December 2013 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT61003PY
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PHPT61003NY
OT669
LFPAK56)
PHPT61003PY
AEC-Q101
sot669 footprint
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PDF
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Untitled
Abstract: No abstract text available
Text: LF PA K 56 PHPT61003NY 100 V, 3 A NPN high power bipolar transistor 3 February 2014 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT61003PY
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PHPT61003NY
OT669
LFPAK56)
PHPT61003PY
AEC-Q101
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Untitled
Abstract: No abstract text available
Text: LF PA K 56 PHPT61002PYC 100 V, 2 A PNP high power bipolar transistor 10 January 2014 Product data sheet 1. General description PNP high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT61002NYC.
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PHPT61002PYC
OT669
LFPAK56)
PHPT61002NYC.
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smd transistor marking PA
Abstract: smd transistor marking GA smd marking GA 2SC3663 MARKING Pa TRANSISTOR PA transistor smd
Text: Transistors IC SMD Type NPN Epitaxial Silicon Transistor 2SC3663 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 NF = 3.0 dB TYP. @VCE = 1 V, IC = 250 PA, f = 1.0 GHz 0.55 Low-voltage, low-current, low-noise and high-gain
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2SC3663
OT-23
smd transistor marking PA
smd transistor marking GA
smd marking GA
2SC3663
MARKING Pa TRANSISTOR
PA transistor smd
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STK and STR integrated circuits
Abstract: transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code
Text: SMD-codes DATABOOK Active SMD semiconductor components marking codes • 235.000 SMD-codes for active semiconductor components: • Diodes, Transistors, Thyristors, Integrated Circuits • Case pin assignment • Pinout • Marking style • Schematic diagram
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OD-80
OT-223
OT-89
STK and STR integrated circuits
transistor smd zG 1e
STR-Z4579
Turuta
6 pin TRANSISTOR SMD CODE PA
transistor 5d smd
ELM85361A
STK and STR integrated circuits, 2011 edition
5g smd transistor
15D diode smd code
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Nordmende
Abstract: Funkamateur Kathrein Antennas ECC85 TBA810 AMPLIFIER TBA810 Kathrein LFPAK package 5 ferrite rod antenna SiC PIN diode Pspice model
Text: Appendix RF Manual 7th edition November 2005 date of release: November 2005 document order number: 9397 750 15371 Contents 1. Thermal design considerations for SMD discretes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 1.1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4
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smd diode K7
Abstract: TRANSISTOR SMD wb smd transistor 2f smd diode 2F S1WB S 40 68 SMD tr 2f transistor 2F I smd diode 2F 7A rectifier s1wb transistor SMD 2f
Text: W M S M D <M*%m Diagram of the Surface Mounting Devices pa £3 Type No. A’ 7 ~ h 7 > y ^ Application 2SA 1795 • D C - D C z i> M — £ 2SA 1796 • *a v/i- Power Transistor 2SC 4668 2SC 4669 • dn^&^s KP y • i —2 K7 -Y • ; \ > v - K-7< 7 • DC-DC Converter
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2SA1795
2SA1796
2SC4668
2SC4669
D1FL40
D2FL40
DE3L40
DE5LC40
D1FL20U
D2FL20U
smd diode K7
TRANSISTOR SMD wb
smd transistor 2f
smd diode 2F
S1WB S 40 68
SMD tr 2f
transistor 2F I
smd diode 2F 7A
rectifier s1wb
transistor SMD 2f
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Untitled
Abstract: No abstract text available
Text: • bh53131 00E3T77 STT « A P X N A PIER PHIL IPS/D ISCR ETE BST120 b7E D P-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR P-channel vertical D-MOS transistor in SOT89 envelope and intended for use in relay, high-speed and line-transformer drivers, using SMD technology.
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bh53131
00E3T77
BST120
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BST122
Abstract: No abstract text available
Text: • b b s s 'm 0023^0 uw N AMER PHILIPS/DISCRETE APX b7E D BST122 JV P-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR P-channel vertical D-MOS transistor in SOT89 envelope and intended fo r use in relay, high-speed and line-transformer drivers, using SMD-technology.
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BST122
hhS3131
BST122
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Untitled
Abstract: No abstract text available
Text: PMBT5088 _/ v_ SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N small signal transistor in plastic SOT-23 package intended fo r low-noise input stages in audio equipment, when using SMD technology. QUICK REFERENCE DATA Collector-emitter voltage open base
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PMBT5088
OT-23
OT-23.
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TRANSISTOR SMD MARKING CODE JSs
Abstract: smd JSs transistor TRANSISTOR SMD MARKING CODE DM TRANSISTOR SMD MARKING CODE pKX smd code pKX smd JSs SMD CODE TRANSISTOR JA smd transistor FY smd transistor marking PA 6 pin TRANSISTOR SMD CODE PA
Text: Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT23 envelope. Designed for use as a Surface Mounted Device SMD in thin and thick-film circuits with
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PMBF170
TRANSISTOR SMD MARKING CODE JSs
smd JSs transistor
TRANSISTOR SMD MARKING CODE DM
TRANSISTOR SMD MARKING CODE pKX
smd code pKX
smd JSs
SMD CODE TRANSISTOR JA
smd transistor FY
smd transistor marking PA
6 pin TRANSISTOR SMD CODE PA
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transistor SMD Lf
Abstract: LF transistor smd SOT-23 lF smd transistor SMD Transistor LF BKC Semiconductors
Text: Switching Diode SMD SOT-23 Plastic Use Advantages T3 S Used in applications where the highest circuit density and current performance are required. For applications as voltage isolators, pulse clippers, transistor biassing and as glue logic. Ideal for use in portable or cellular telephones,
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OT-23
transistor SMD Lf
LF transistor smd SOT-23
lF smd transistor
SMD Transistor LF
BKC Semiconductors
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transistor tt 2222
Abstract: smd 809 x transistor transistor SMD S33
Text: N AUER PHILIPS/DISCRETE •. b'lE T> m bbSBSBl 0DSfl737 bOfl « A P X jg iiiiw n o u cto Kroouci specification BLT50 UHF pow er transistor FEATURES • SMD encapsulation • Gold metallization ensures
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0DSfl737
BLT50
OT223
bbS3R31
0DS87M3
transistor tt 2222
smd 809 x transistor
transistor SMD S33
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transistor SMD MARKING CODE HF
Abstract: smd code HF transistor
Text: • bbS3T31 0DE470fl 14fl ■ APX N AUER PHILIPS/DISCRETE BF824 b7E D 7 V H.F. SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor in a plastic SOT-23 envelope especially intended for r.f. stages in f.m. front-ends in common base configuration for SMD applications.
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bbS3T31
0DE470fl
BF824
OT-23
bb53131
0DEM711
7Z72155
7Z72159
D024712
transistor SMD MARKING CODE HF
smd code HF transistor
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Untitled
Abstract: No abstract text available
Text: PZT3904 _ / SILICON PLANAR EPITAXIAL TRANSISTOR NPN transistor in a microminiature SMD package SOT-223 . Designed prim arily fo r high-speed, saturated switching applications in industrial service. QUICK REFERENCE D ATA
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PZT3904
OT-223)
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