buz71a
Abstract: No abstract text available
Text: PowerMOS transistor _ N AMER PHILIPS/DISCRETE OLE D BUZ71A • hhS3131 D D m M C H 5 ■ T-3 1 - 1/ May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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BUZ71A
hhS3131
O220AB
T-39-11
bb53T31
buz71a
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BUK545-50A
Abstract: BUK545 BUK545-50B
Text: N AMER PH IL IP S/ DISCR ET E 5SE D fc>h53T31 DDEOSTQ 4 PowerMOS transistor Logic Level FET BUK545-50A BUK545-50B r -3 7 -,3 < 7 GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack envelope. The device is intended for use in
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h53T31
BUK545-50A
BUK545-50B
BUK545
ID/100
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BST122
Abstract: No abstract text available
Text: • b b s s 'm 0023^0 uw N AMER PHILIPS/DISCRETE APX b7E D BST122 JV P-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR P-channel vertical D-MOS transistor in SOT89 envelope and intended fo r use in relay, high-speed and line-transformer drivers, using SMD-technology.
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BST122
hhS3131
BST122
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hsb 772 p
Abstract: BFG31 BFG97 UBB347 UBB348
Text: • bbS3S31 0024fl0M 483 HIAPX Philips Sem iconductors Product specification N AMER PHILIPS/DISCRETE b?E D PNP 5 GHz wideband transistor c BFG31 PINNING FEATURES • High output voltage capability PIN • High gain bandwidth product 1 emitter DESCRIPTION • Good thermal stability
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0G24fl04
BFG31
OT223
BFG97.
OT223.
hsb 772 p
BFG31
BFG97
UBB347
UBB348
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transistor 1547 b
Abstract: transistor 1548 b transistor 1548 210EC BSS63 TRANSISTOR b72 L7E transistor
Text: • bbSBTBl G025L03 b?E H A P X N AUER P H I L I P S / D I S C R E T E BSS63 b?E D y v HIGH VOLTAGE P-N-P TRANSISTORS Silicon planar epitaxial transistor in a microminiature plastic envelope intended for application in thick and thin-film circuits. This transistor is intended for high voltage general purpose and switching
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G025L03
BSS63
7Z59855
transistor 1547 b
transistor 1548 b
transistor 1548
210EC
BSS63
TRANSISTOR b72
L7E transistor
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