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    Spartan Power BPP900600100

    VE.CAN RESISTIVE TANK SENDER ADA
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    Advanced Photonix PDV-P9006

    CDS PHOTORES 80K-200KOHM 4.20MM
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    ams OSRAM Group SPL BP90-06-8-03B

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    Grayhill Inc 09P90-06-1-03N

    Switch Rotary SP3T 3 Flatted Shaft PC Pins 0.25A 115VAC 28VDC - Bulk (Alt: 09P90-06-1-03N)
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    Grayhill Inc 09P90-06-1-02N

    Switch Rotary SPDT 2 Flatted Shaft PC Pins 0.25A 115VAC 28VDC - Bulk (Alt: 09P90-06-1-02N)
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    P9006 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    P9006EDG Niko Semiconductor P-Channel Logic Level Enhancement FET Original PDF
    P9006EDG Niko Semiconductor P-Channel Logic Level Enhancement Original PDF

    P9006 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: CdS Photoconductive Photocells PDV-P9006 FEATURES DESCRIPTION • Visible light response • Sintered construction • Low cost The PDV-P9006 are CdS , Photoconductive • Camera exposure photocells designed to sense light from 400 to 700 • Shutter controls


    Original     		PDF PDV-P9006 PDV-P9006

    P9006EDG

    Abstract: nikosem niko-sem nikos
    Text: NIKO-SEM P9006EDG P-Channel Logic Level Enhancement TO-252 Lead-Free Mode Field Effect Transistor Preliminary D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -60V 90mΩ -8A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)


    Original     		PDF P9006EDG O-252 OCT-21-2004 P9006EDG nikosem niko-sem nikos

    Light dependent resistors

    Abstract: p9006 PDV-P9006 photocells
    Text: CdS Photoconductive Photocells PDV-P9006 PACKAGE DIMENSIONS INCH [mm] PACKAGE DIMENSIONS INCH [mm] ±.010 [0.25] .138 [3.50] +.015 [0.38] -.010 [0.25] .079 [2.00] EPOXY ON LEADS 3 mm MAX 2X Ø.016 [0.40] .100 [2.54] PLASTIC COATED ±.010 [0.25] Ø.165 [4.19]


    Original     		PDF PDV-P9006 PDV-P9006 A2856 Light dependent resistors p9006 photocells

    Untitled

    Abstract: No abstract text available
    Text: Single P-channel MOSFET ELM32401LA-S •General description ■Features ELM32401LA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=-60V Id=-7A Rds(on) < 90mΩ (Vgs=-10V) Rds(on) < 135mΩ (Vgs=-4.5V)


    Original     		PDF ELM32401LA-S ELM32401LA-S O-252 OCT-21-2004 P9006EDG

    CAT7105CA

    Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
    Text: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A


    Original     		PDF 5CE120C 5KE120CA 5CE120CA 5CE12A 5KE12A 5CE12C 5KE12CA 5CE12CA CAT7105CA mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al

    p2003bdg

    Abstract: p1504bdg P3003EDG P6006BD P5504EDG P5504EDG "cross reference" FDS6900AS Cross Reference P0804BD P2804BDG cross reference zxmp6A17
    Text: Issue Number | 002 21 July 2009 New Product Announcement MOSFETs address LCD TV and monitor backlighting Diodes Incorporated has introduced 15 MOSFETs tailored to the needs of power management in LCD backlighting, DC motor control and DC-DC converters. These MOSFETs have been


    Original     		PDF DMN3024LSD DMN3024LSS DMN2027LK3 DMP3025LK3 DMN3020LK3 DMN3024LK3 DMN4009LK3 DMN4015LK3 DMN4030LK3 DMN4036LK3 p2003bdg p1504bdg P3003EDG P6006BD P5504EDG P5504EDG "cross reference" FDS6900AS Cross Reference P0804BD P2804BDG cross reference zxmp6A17

    Untitled

    Abstract: No abstract text available
    Text: 单 P 沟道 MOSFET ELM32401LA-S •概要 ■特点 ELM32401LA-S 是 P 沟道低输入电容，低工作电压， 低导通电阻的大电流 MOSFET。 •Vds=-60V ·Id=-7A ·Rds on < 90mΩ (Vgs=-10V) ·Rds(on) < 135mΩ (Vgs=-4.5V) ■绝对最大额定值


    Original     		PDF ELM32401LA-S OCT-21-2004 P9006EDG O-252

    P70N02LDG

    Abstract: p0603bdg P60N03LDG PA102FDG P2503NPG P45N02LDG P0603BD P1703BDG P0403BDG P3004ND5G
    Text: PRODUCT SELECTION GUIDE NIKO-SEM Surface-Mount And Through-Hole Power MOSFET Part Number BVDSS V VGS@ 2.5V RDS(ON) Max (mΩ) VGS@ VGS@ 4.5V 10V Ciss(Typ.) (pF) Qg(Typ.) RθJC VGS(th) (nc) ℃/W Max (V) ID (A) PD (W) TO-263 /220 N-Channel P45N02LSG P45N03LTG


    Original     		PDF O-263 P45N02LSG P45N03LTG P75N02LSG P75N02LTG P0903BSG P0903BTG P3055LSG P3055LTG P50N03LSG P70N02LDG p0603bdg P60N03LDG PA102FDG P2503NPG P45N02LDG P0603BD P1703BDG P0403BDG P3004ND5G

    Untitled

    Abstract: No abstract text available
    Text: シングル P チャンネル MOSFET ELM32401LA-S •概要 ■特長 ELM32401LA-S は低入力容量 低電圧駆動、 低 ・ Vds=-60V ON 抵抗という特性を備えた大電流 MOS FET です。 ・ Id=-7A ・ Rds on < 90mΩ (Vgs=-10V) ・ Rds(on) < 135mΩ (Vgs=-4.5V)


    Original     		PDF ELM32401LA-S O-252 OCT-21-2004 P9006EDG

    Untitled

    Abstract: No abstract text available
    Text: Single P-channel MOSFET ELM32401LA-S •General description ■Features ELM32401LA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=-60V Id=-7A Rds(on) < 90mΩ (Vgs=-10V) Rds(on) < 135mΩ (Vgs=-4.5V)


    Original     		PDF ELM32401LA-S ELM32401LA-S O-252 OCT-21-2004 P9006EDG