NCN100-F23-E2-V1
Abstract: NJ50-FP-E2-P4-BHMS4 NJ50-FP-E-P4 NCB50-FP-E2-P4 NJ50-FP-E2-P4 crastin ICS5-2000 NJ50-FP-E-P4-V1 NJ50-FP-E2-P4-V1
Text: Inductive Proximity Sensors 50mm to100mm Sensing Range 3-Wire DC Specifications 50mm Yes No 100mm No — NJ50-FP-E-P4 — NCB50-FP-E2-P4 NJ50-FP-E2-P4 NCN100-F23-E2-V1 Suffix E0/E — NPN, sinking — Suffix E2 PNP, sourcing PNP, sourcing PNP, sourcing 200mA max.
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to100mm
100mm
NJ50-FP-E-P4
NCB50-FP-E2-P4
NJ50-FP-E2-P4
NCN100-F23-E2-V1
200mA
10-60VDC
NCN100-F23-E2-V1
NJ50-FP-E2-P4-BHMS4
NJ50-FP-E-P4
NCB50-FP-E2-P4
NJ50-FP-E2-P4
crastin
ICS5-2000
NJ50-FP-E-P4-V1
NJ50-FP-E2-P4-V1
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M37733S4BFP
Abstract: 80P6N
Text: MITSUBISHI MICROCOMPUTERS M37733S4BFP t duc ro p New 16-BIT CMOS MICROCOMPUTER DESCRIPTION ●Programmable input/output ports P4, P5, P6, P7, P8 . 37 ●Clock generating circuit . 2 circuits built-in
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M37733S4BFP
16-BIT
M37733S4BFP
H-LF432-A
KI-9607
80P6N
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Untitled
Abstract: No abstract text available
Text: MT4S301T TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planer Type MT4S301T UHF-SHF Low Noise Amplifier Application Unit:mm 1.2±0.05 FEATURES 0.52±0.05 4 3 P4 1 1. Collector 2. Emitter 3. Base 4. Emitter 2 TESQ Absolute Maximum Ratings Ta = 25°C
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MT4S301T
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SG3842GD
Abstract: SG3842GS Brymen BM729 20CTQ100 SG3843GS sg 3842 a Zentech 2600a GR 8876 E56086 BM729
Text: PNB60190T-SG384x C o n t e n t s 1.General 2.Demo Specification.P2 Board Circuit Diagram.P3 3.BOM.P4 4.Transformer 5.Check List.P8 6.Temperature 7.EMI Test 8.EMS Test 9.SG384x
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PNB60190T-SG384x
SG384x
SG3842GD
SG3842GS
Brymen BM729
20CTQ100
SG3843GS
sg 3842 a
Zentech 2600a
GR 8876
E56086
BM729
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PDF
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AN7254
Abstract: AN7260 RFP4N05L RFP4N06L TA09520 TB334
Text: RFP4N05L, RFP4N06L Data Sheet Title FP4 5L, P4 6L bt A, V d V, 00 m, gic vel, Cha el wer OSTs) utho eyrds ter- July 1999 4A, 50V and 60V, 0.800 Ohm, Logic Level, N-Channel Power MOSFETs Features The RFP4N05L and RFP4N06L are N-Channel enhancement mode silicon gate power field effect transistors designed for
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RFP4N05L,
RFP4N06L
RFP4N05L
RFP4N06L
AN7254
AN7260
TA09520
TB334
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PDF
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BFP410
Abstract: AN235 C166 TRANSISTOR noise figure measurements TRANSISTOR noise figure measurements application
Text: BF P4 1 0 In ve s ti g a t i o n o f P h a s e N o i s e i n K u Ba n d DR Os u s i n g BF P4 1 0 Ph a s e n o i s e p e rfo r ma n c e vs . c o l l e c to r c u rre n t Ap p l i c a ti o n N o te A N 2 3 5 Revision: Rev. 1.0 2010-08-11 RF a n d P r o te c ti o n D e vi c e s
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BFP410
BFP410
AN235,
AN235
AN235
C166
TRANSISTOR noise figure measurements
TRANSISTOR noise figure measurements application
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Untitled
Abstract: No abstract text available
Text: BurrĆBrown Products from Texas Instruments TMP400 TM P4 00 SBOS404 – DECEMBER 2007 ±1°C Remote and Local TEMPERATURE SENSOR with N-Factor and Series Resistance Correction FEATURES 1 • • • • 234 • • • • • • • • ±1°C REMOTE DIODE SENSOR
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TMP400
SBOS404
TMP400
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LMT3
Abstract: lth5 converter lth7 2N3906 LT11 QSSOP-16 RT11 TMP400 TMP4009 tmp4001
Text: BurrĆBrown Products from Texas Instruments TMP400 TM P4 00 SBOS404 – DECEMBER 2007 ±1°C Remote and Local TEMPERATURE SENSOR with N-Factor and Series Resistance Correction FEATURES 1 • • • • 234 • • • • • • • • ±1°C REMOTE DIODE SENSOR
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TMP400
SBOS404
LMT3
lth5 converter
lth7
2N3906
LT11
QSSOP-16
RT11
TMP400
TMP4009
tmp4001
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PDF
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MP4503
Abstract: No abstract text available
Text: TOSHIBA MP4503 TOSHIBA POWER TRANSISTOR MODULE SILICON NPN & PNP EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR 4 IN 1 M P4 5 0 3 HIGH POWER SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD SWITCHING.
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MP4503
MP4503
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PDF
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DARLINGTON 3A 100V npn array
Abstract: mp45
Text: TOSHIBA MP4506 TOSHIBA POWER TRANSISTOR MODULE SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER TRANSISTOR 4 IN 1 M P4 5 0 6 HIGH POWER SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS U nit in mm HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD SWITCHING.
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MP4506
DARLINGTON 3A 100V npn array
mp45
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Transistor BFR 14
Abstract: NPN planar RF transistor Transistor BFR 50 D-7100 Transistor BFR 30 D7100 STA 7100
Text: BFR 92 BFR 92 R Marked with. P 1 TTlkdiFyMD&IJiMelectronic Marked with: P4 Creative Technologies Silicon NPN Planar RF Transistor Applications: RF-amplifier up to GHz range specially tor wideband antenna amplifier Features: • High power gain • High transition frequency
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D-7100
Transistor BFR 14
NPN planar RF transistor
Transistor BFR 50
Transistor BFR 30
D7100
STA 7100
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PDF
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MP4013
Abstract: MP401
Text: TOSHIBA MP4013 TOSHIBA POWER TRANSISTOR MODULE SILICON NPN EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR 4 IN 1 M P4 0 1 3 HIGH POWER SWITCHING APPLICATIONS. H AM M ER DRIVE, PULSE MOTOR DRIVE A N D INDUCTIVE LOAD INDUSTRIAL APPLICATIONS Unit in mm SWITCHING.
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MP4013
MP401
MP4013
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PDF
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MP4507
Abstract: No abstract text available
Text: TOSHIBA MP4507 TOSHIBA POWER TRANSISTOR MODULE SILICON TRIPLE DIFFUSED TYPE DARLINGTON POWER TRANSISTOR 4 IN 1 M P4 5 0 7 HIGH PO W ER SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm H A M M ER DRIVE, PULSE M OTOR DRIVE AN D INDUCTIVE. LOAD SWITCHING
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MP4507
MP4507
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PDF
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pnp darlington array
Abstract: DARLINGTON TRANSISTOR ARRAY MP4504
Text: TOSHIBA MP4504 TOSHIBA POWER TRANSISTOR MODULE SILICON PNP EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR 4 IN 1 M P4 5 0 4 HIGH POWER SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD SWITCHING. Package with Heat Sink Isolated to Lead (SIP 12 Pin)
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MP4504
pnp darlington array
DARLINGTON TRANSISTOR ARRAY
MP4504
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI MICROCOMPUTERS M37733S4BFP 16-BIT CMOS MICROCOMPUTER DESCRIPTION •P ro g ra m m a b le input/output The M 37733S4BFP is a m icrocom puter using the 7700 Family core. ports P4, P5, P6, P7, P 8 . 37
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M37733S4BFP
16-BIT
37733S4BFP
OFP80-P-1420-0
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PDF
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Untitled
Abstract: No abstract text available
Text: 7600 Series M37640E8-XXXF Preliminary Specification Mitsubishi Microcomputer 3 Electrical Characteristics 3.1 Absolute Maximum Ratings Table 3-1. Absolute Maximum Ratings Parameter Conditions Symbol uu > Power supply AVCC Analog power supply Vi Input voltage PO, PI, P2, P3, P4, P5, P6, P7, P8
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M37640E8-XXXF
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Untitled
Abstract: No abstract text available
Text: SANYO SEMI CON DUCTOR LB 1 2 1 3 M! :?«5«*a5S6%e9 15E i "I" 7TÌ7 D 7 t DUJ.hl.lh = | CORP •'P4 S-2.5’ 10 M onolithic Digital 1C 3035A General-Purpose Transistor Array 1354B The LB1213M is a general-purpose transistor array containing 7 channels.
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1354B
LB1213M
035A-M16IC
7067KI/7315KI/9133KI
LB1213M
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MP4703
Abstract: Jl08 mos fet 120v 10A
Text: TOSHIBA MP4703 TOSHIBA POWER MOS FET MODULE SILICON N CHANNEL MOS TYPE L2-tt-MOSIV 4 IN 1 M P4 7 0 3 HIGH POWER, HIGH SPEED SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD SWITCHING. • 4-Volt Gate Drive
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MP4703
MP4703
Jl08
mos fet 120v 10A
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P403A
Abstract: No abstract text available
Text: SONY C X P 8 7 1 P4 0 CMOS 8-bit Single Chip Microcomputer Description The CXP871P40 is a CMOS 8-bit microcomputer which consists of A/D converter, serial interface 2ch independently , timer/counter, time base timer, vector interruption, high precision timing pattern
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CXP871P40
CXP871
10OPIN
00P-L01
00-P-1420
42/COPPER
100PIN
00-P-1414
P403A
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PDF
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MP4514
Abstract: No abstract text available
Text: T O S H IB A MP4514 TOSHIBA POWER TRANSISTOR MODULE SILICON NPN EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR 4 IN 1 M P4 514 HIGH POWER SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS H AM M ER DRIVE, PULSE MOTOR DRIVE A N D INDUCTIVE LOAD SWITCHING Package with Heat Sink Isolated to Lead (SIP 12 Pin)
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MP4514
MP4514
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PDF
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Untitled
Abstract: No abstract text available
Text: SONY C X P 8 7 1 P4 0 CMOS 8-bit Single Chip Microcomputer Description The CXP871P40 is a CMOS 8-bit microcomputer which consists of A/D converter, serial interface 2ch independently , timer/counter, time base timer, vector interruption, high precision timing pattern
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CXP871P40
XP871P40
CXP871P40
100PIN
QFP100-P-1420-A
QFP-100P-L01
COPPER/42
OFP100
414-A
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2SA675
Abstract: 2sc1279 2SA685 2N6734 2N6735 2SA749 2SC505 2SC506 2SC507 transistors 2SA749
Text: High Voltage Transistors TYFE NO. fO IA RITY CASE MAXIM UM RATINGS P4 IC VCEO ICM* VCEÄ* mA (V) (mW) 2N6734 2N6735 ZSA637 2SA639 2SA675 P P P P P TO-237A TO-237A TO* IS TO-92B TOW B 2500G 25000 300 200 250 100 2SA685 2SA749 2SC505 2SC306 2SC507 P P N N
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2N6734
O-237A
2500G
2N6735
ZSA637
25A639
O-92B
2SA675
2sc1279
2SA685
2SA749
2SC505
2SC506
2SC507
transistors 2SA749
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PDF
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2n3819
Abstract: bf245b
Text: N - Channel Junction Field Effect Transistors GENERAL PURPOSE TYPE NO. CASE MAXIMUM RATINGS BV css P4 mW (V) loss (mA) min max Y* (nimbos) min max Vcsf««) (V) min max Cte (pF) max (pF) max Cr„ NF (dB) max 8 8 8 8 14.5 4+ 4+ 4+ 4+ 11+ 1.2+ 1.2+ 1.2+ 1.2+
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BC264A
BC264B
BC264C
BC264D
BF246A
BF246B
BF246C
BF247A
BF247B
BF247C
2n3819
bf245b
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PDF
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4516BF
Abstract: cmos mc14516 4516B IC 4516BT D4516B 4516B
Text: CD4510B, CD4516B Types 23 HARRIS C D 4510B PRESET_ ENABLE • Medium-speed operation - 4 f^ L = 8 MHz typ. at 10 V BCD Type PI - ■ Synchronous internal carry propagation 3 C D 4 5 1 6 B - B inary Type 2 P4 - ■ Reset and Preset capability
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4510B
CD4510B,
CD4516B
CD4510B
CD4071B.
4516BF
cmos mc14516
4516B IC
4516BT
D4516B
4516B
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