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    2SC505 Search Results

    2SC505 Result Highlights (2)

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    2SC5051 Renesas Electronics Corporation Small Signal Bip-TRSs for High Frequency Amplifier, , / Visit Renesas Electronics Corporation
    2SC5050 Renesas Electronics Corporation Small Signal Bip-TRSs for High Frequency Amplifier, , / Visit Renesas Electronics Corporation
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    2SC505 Price and Stock

    ROHM Semiconductor 2SC5053T100Q

    TRANS NPN 50V 1A MPT3
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    Quest Components 2SC5053T100Q 294
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    ROHM Semiconductor 2SC5053T100R

    TRANS NPN 50V 1A MPT3
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    Onlinecomponents.com 2SC5053T100R 700
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    ROHM Semiconductor 2SC5053

    1000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
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    Quest Components 2SC5053 1,000
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    2SC505 Datasheets (58)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SC505 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC505 Micro Electronics Semiconductor Device Data Book Scan PDF
    2SC505 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SC505 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC505 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC505 Unknown Cross Reference Datasheet Scan PDF
    2SC505 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SC505 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SC505 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC505 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC505 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SC505 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC505 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC505 Toshiba Japanese Transistor Data Book Scan PDF
    2SC5050 Hitachi Semiconductor Silicon NPN Transistor Original PDF
    2SC5050 Hitachi Semiconductor Silicon NPN Epitaxial Original PDF
    2SC5050 Renesas Technology Silicon NPN Epitaxial Original PDF
    2SC5050 Renesas Technology Silicon NPN Epitaxial Original PDF
    2SC5050 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC5051 Hitachi Semiconductor Silicon NPN Epitaxial Original PDF

    2SC505 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC5053

    Abstract: No abstract text available
    Text: Transistors SMD Type Medium Power Transistor 2SC5053 Features Low saturation voltage, typically VCE sat = 0.12V at IC / IB = 500mA / 50mA. PC=2W (on 40x40×0.7mm ceramic board). Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage


    Original     		PDF 2SC5053 500mA 100ms, 40X40X0 -500mA -50mA 100MHz 2SC5053

    Untitled

    Abstract: No abstract text available
    Text: SMD Type Type SMD Transistors IC Product specification 2SC5053 Features Low saturation voltage, typically VCE sat = 0.12V at IC / IB = 500mA / 50mA. PC=2W (on 40x40×0.7mm ceramic board). Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage


    Original     		PDF 2SC5053 500mA 100ms, 40X40X0 -500mA -50mA 100MHz

    2SC4926

    Abstract: 2SC5051 Hitachi transistor DSA003638
    Text: 2SC5051 Silicon NPN Epitaxial ADE-208-1131A Z 2nd. Edition Mar. 2001 Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 11 GHz Typ • High gain, low noise figure PG = 14.5 dB Typ, NF = 1.1 dB Typ at f = 900 MHz Outline


    Original     		PDF 2SC5051 ADE-208-1131A 2SC4926 2SC5051 Hitachi transistor DSA003638

    2SC5051

    Abstract: 2SC5051YZ-TR-E PTSP0003ZA-A
    Text: 2SC5051 Silicon NPN Epitaxial REJ03G0741-0300 Previous ADE-208-1131A Rev.3.00 Aug.10.2005 Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 11 GHz Typ • High gain, low noise figure PG = 14.5 dB Typ, NF = 1.1 dB Typ at f = 900 MHz


    Original     		PDF 2SC5051 REJ03G0741-0300 ADE-208-1131A) PTSP0003ZA-A 2SC5051 2SC5051YZ-TR-E PTSP0003ZA-A

    2SC5053

    Abstract: 2SA1900 T100
    Text: 2SC5053 Transistors Medium power transistor 50V, 1A 2SC5053 zDimensions (Unit : mm) zFeatures 1) Low saturation voltage, typically VCE(sat) = 0.12V at IC / IB = 500mA/ 50mA 2) PC=2W (on 40x40×0.7mm ceramic board) 3) Complements the 2SA1900 MPT3 (1)Base


    Original     		PDF 2SC5053 500mA/ 2SA1900 2SC5053 2SA1900 T100

    2SC5053

    Abstract: 2SA1900 T100 AL MARKING
    Text: 2SA1900 Transistors Medium power transistor −50V, −1A 2SA1900 zExternal dimensions (Unit : mm) zFeatures 1) Low saturation voltage, typically VCE(sat) = −0.15V at IC / IB = −500mA/ −50mA 2) PC=2W (on 40x40×0.7mm ceramic board) 3) Complements the 2SC5053


    Original     		PDF 2SA1900 -500mA/ -50mA 2SC5053 2SC5053 2SA1900 T100 AL MARKING

    Hitachi DSA00164

    Abstract: No abstract text available
    Text: 2SC5058 Silicon NPN Triple Diffused Planar Application Character display horizontal deflection output Features • High speed switching tf ≤ 0.3 µsec • High breakdown voltage VCBO = 1700 V Outline TO-3PL 1. Base 2. Collector 3. Emitter 1 2 3 2SC5058 Absolute Maximum Ratings Ta = 25°C


    Original     		PDF 2SC5058 D-85622 Hitachi DSA00164

    2SC5058

    Abstract: Hitachi DSA00498
    Text: 2SC5058 Silicon NPN Triple Diffused Planar Application TO–3PL Character display horizontal deflection output Features • High speed switching tf ≤ 0.3 µsec • High breakdown voltage VCBO = 1700 V 1 1. Base 2. Collector 3. Emitter 2 3 Absolute Maximum Ratings Ta = 25°C


    Original     		PDF 2SC5058 2SC5058 Hitachi DSA00498

    96-115-B352

    Abstract: 2SA1900 2SC5053 B352
    Text: Transistors 2SA1900 2SC5053 96-115-B352 (96-196-D352) 297


    Original     		PDF 2SA1900 2SC5053 96-115-B352) 96-196-D352) 96-115-B352 2SA1900 2SC5053 B352

    Hitachi DSA002756

    Abstract: No abstract text available
    Text: 2SC5050 Silicon NPN Epitaxial Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 11 GHz Typ • High gain, low noise figure PG = 14.0 dB Typ, NF = 1.1 dB Typ at f = 900 MHz Outline 2SC5050 Absolute Maximum Ratings Ta = 25°C


    Original     		PDF 2SC5050 Hitachi DSA002756

    Untitled

    Abstract: No abstract text available
    Text: SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SA1899 POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AM PLIFIER APPLICATIONS. • Complementary to 2SC5052. M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT VCBO -1 2 0 V Collector-Emitter Voltage VCEO


    OCR Scan     		PDF 2SA1899 2SC5052. ----120V, --10mA, --100mA --500mA, --50mA

    Untitled

    Abstract: No abstract text available
    Text: 2SC5058 Silicon NPN Triple Diffused Planar HITACHI Application Character display horizontal deflection output Features • High speed switching tf < 0.3 jisec • High breakdown voltage VCbo = 1700 V Outline 1 Base 2 Collector 3 Emitter 2SC5058 Absolute Maximum Ratings Ta = 25°C


    OCR Scan     		PDF 2SC5058

    Untitled

    Abstract: No abstract text available
    Text: 2SA1900 2SC5053 Transistors Medium Power Transistor —50V, —1A 2SA1900 I • Features 1) ^Absolute maximum ratings (Ta—2 5 t ) L o w VcEfsat). (T y p .— 0 .1 5 V a t Ic/I b = — 5 0 0 /— 5 0 m A ) 2 ) Pc = 2W Parameter Collector-base voltage C otiector-emitter voltage


    OCR Scan     		PDF 2SA1900 2SC5053 0Dlb713 O-220FN O-220FN O220FP T0-220FP, O-220FP.

    2SC5053

    Abstract: bo78 2SC5053 NPN transistor bb3 marking code 43b marking CODE 43B transistor 2SA1900 T100 Transistor npn 43B MARKING
    Text: 2SC5053 Transistor, NPN Features Dimensions Units : mm available in MPT3 (MPT, SC-62) package 2SC5053 (MPT3) package marking: 2SC5053; CGit, where ★ is hFE code ¿s'* 4 .5 _ o-2 .i 1.6*0.1 UÌ Pc = 2 W when mounted on a 40 x 40 x 0.7 mm ceramic substrate


    OCR Scan     		PDF 2SC5053 SC-62) 2SC5053; 2SA1900 2SC5053 bo78 2SC5053 NPN transistor bb3 marking code 43b marking CODE 43B transistor 2SA1900 T100 Transistor npn 43B MARKING

    2SK2752

    Abstract: 2sk1326 3SK234 2SK431 3SK238 3SK229 3SK197 2SK1479 1535M 2SK190
    Text: SMALL SIGNAL TRANSISTOR •High frequency amplifier Package code Type No. CMPAK 2SC4903 2SC4906 2SC4965 2SC4967 2SC5051 CMPAK-4 2SC4994 2SC4995 2SC5079 2SC5081 MPAK 2SC2619 2SC2620 2SC2732 2SCZ733 2SC2734 2SC2735 2SC2736 2SC2776 2SC3127 2SC3513 2SC3793 2SC3867


    OCR Scan     		PDF 2SC46 2SK1070 2SK1326 2SK1479 2SK2752* 2SK2752 3SK234 2SK431 3SK238 3SK229 3SK197 1535M 2SK190

    Untitled

    Abstract: No abstract text available
    Text: TO SH IB A 2SA1899 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 899 POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. • Complementary to 2SC5052. MAXIMUM RATINGS (Ta = 25°C) SYMBOL RATING UNIT Collector-Base Voltage


    OCR Scan     		PDF 2SA1899 2SC5052.

    C5053

    Abstract: No abstract text available
    Text: 2SA1900 2SC5053 Transistors I Medium Power Transistor -5 0 V , — 1A 2SA1900 • Features ^Absolute maximum ratings (Ta=25"C ) 1 ) Low VcEisat). (Typ. —0.15V at 1c/! b = — 5 0 0 /—50m A) 2 ) Pc = 2W (CM 40 X 40 X 0.7 mm ceramic board.) 3 ) C om plem ents the 2S C5053.


    OCR Scan     		PDF 2SA1900 2SC5053 2SA1900 /--50m C5053. C5053

    Untitled

    Abstract: No abstract text available
    Text: HITACHI 2SC5051 -Silicon NPN Bipolar Transistor Application VHF & U HF wide band amplifire CMPAK Features • High gain bandwidth product fT = 11 GHz typ • High gain, low noise figure PG = 14.5 dB typ, NF = 1.1 dB typ at f = 900 MHz m * 2 Table 1 Absolute M aximum Ratings Ta = 25°C


    OCR Scan     		PDF 2SC5051 2SC4926.

    Untitled

    Abstract: No abstract text available
    Text: H ITACHI 2SC5058 -Silicon NPN Triple Diffused Planar Application T O -3 P L Character display horizontal deflection output Features • High speed switching tf < 0 .3 fisec • High breakdown voltage V C BO = 1700 V 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings Ta = 25°C


    OCR Scan     		PDF 2SC5058 2SC5058

    Untitled

    Abstract: No abstract text available
    Text: 2SC5050 Silicon NPN Epitaxial HITACHI Application VH F / UHF wide band amplifier Features • High gain bandwidth product fT = 11 GHz Typ • High gain, low noise figure PG - 14.0 dB Typ, NF = 1.1 dB Typ at f = 900 M Hz Outline MPAK ! 1. Emitter 2 2- Base


    OCR Scan     		PDF 2SC5050 IS21I 2SC4926.

    Untitled

    Abstract: No abstract text available
    Text: 2SC5057 Silicon NPN Triple Diffused Planar HITACHI Application HDTV horizontal deflection output Features • High breakdown voltage VCB0 = 1700 V Outline 1. B a s e 2. C o lle c to r 3. E m itte r 2SC5057 Absolute Maximum Ratings Ta = 25 °C Item Sym bol


    OCR Scan     		PDF 2SC5057

    Untitled

    Abstract: No abstract text available
    Text: 2SC5057 Silicon NPN Triple Diffused Planar HITACHI Application HDTV horizontal deflection output Features • High breakdown voltage VCB0= 1700 V Outline 1. B a se 2. C o lle c to r 3. E m itte r 2SC5057 Absolute Maximum Ratings Ta = 25 °C Item Symbol Ratings


    OCR Scan     		PDF 2SC5057 D-85622

    2SA1899

    Abstract: 2SC5052
    Text: TOSHIBA 2SA1899 2 S A 1 899 TO SH IBA TRANSISTOR PO W E R A M PLIFIER APPLICATIONS. SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm 2.7MAX. DRIVER STAGE AM PLIFIER APPLICATIONS. 3.8 • Complementary to 2SC5052. ailFs M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SA1899 2SC5052. 2SA1899 2SC5052

    2SA675

    Abstract: 2sc1279 2SA685 2N6734 2N6735 2SA749 2SC505 2SC506 2SC507 transistors 2SA749
    Text: High Voltage Transistors TYFE NO. fO IA RITY CASE MAXIM UM RATINGS P4 IC VCEO ICM* VCEÄ* mA (V) (mW) 2N6734 2N6735 ZSA637 2SA639 2SA675 P P P P P TO-237A TO-237A TO* IS TO-92B TOW B 2500G 25000 300 200 250 100 2SA685 2SA749 2SC505 2SC306 2SC507 P P N N


    OCR Scan     		PDF 2N6734 O-237A 2500G 2N6735 ZSA637 25A639 O-92B 2SA675 2sc1279 2SA685 2SA749 2SC505 2SC506 2SC507 transistors 2SA749