Low Capacitance MOS FET
Abstract: PS7341A-1B PS7341AL-1B
Text: PRELIMINARY DATA SHEET Solid State Relay OCMOS FET PS7341A-1B,PS7341AL-1B 6-PIN DIP, 20 Ω LOW ON-STATE RESISTANCE 100 pF LOW OUTPUT CAPACITANCE 1-ch Optical Coupled MOS FET DESCRIPTION The PS7341A-1B and PS7341AL-1B are solid state relays containing GaAs LEDs on the light emitting side input
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PS7341A-1B
PS7341AL-1B
PS7341AL-1B
Low Capacitance MOS FET
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transistor 1608
Abstract: 2SC5606 2SC5606-T1 PU10781JJ01V0DS MA3510
Text: データ・シート NPN シリコン RF トランジスタ NPN Silicon RF Transistor 2SC5606 NPN シリコン RF トランジスタ 低雑音・高利得増幅用 3 ピン超小型ミニモールド（19, 1608 PKG） 特 徴 ○高周波発振に最適（~5 GHz）
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2SC5606
2SC5606-A
2SC5606-T1
2SC5606-T1-A
PU10781JJ01V0DS
P14658JJ3V0DS00
PU10781JJ01V0DS
transistor 1608
2SC5606
2SC5606-T1
MA3510
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2SC5606
Abstract: 2SC5606-T1 ultra low noise NPN transistor nec microwave
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5606 NPN SILICON RF TRANSISTOR FOR LOW NOISE • HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD 19, 1608 PKG FEATURES • Suitable for high-frequency oscillation • fT = 25 GHz technology adopted • 3-pin ultra super minimold (19, 1608 PKG) package
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2SC5606
2SC5606-A
2SC5606-T1
2SC5606-T1-A
M8E0904E
2SC5606
2SC5606-T1
ultra low noise NPN transistor
nec microwave
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NE66219
Abstract: NEC66219 2SC5606
Text: NPN SILICON RF TRANSISTOR NE66219 / 2SC5606 NPN SILICON RF TRANSISTOR FOR LOW NOISE • HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD 19, 1608 PKG FEATURES • Suitable for high-frequency oscillation • fT = 25 GHz technology adopted • 3-pin ultra super minimold (19, 1608 PKG) package
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NE66219
2SC5606
NEC66219
2SC5606
NE66219-T1
2SC5606-T1
NE66219-A
2SC5606-A
NE66219-T1-A
2SC5606-T1-A
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2SC5606
Abstract: transistor 3504 nec 2SC5606-T1 NEC JAPAN 3504
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5606 NPN SILICON RF TRANSISTOR FOR LOW NOISE • HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD FEATURES • Suitable for high-frequency oscillation • fT = 25 GHz technology adopted • 3-pin ultra super minimold
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2SC5606
2SC5606-T1
2SC5606
transistor 3504 nec
2SC5606-T1
NEC JAPAN 3504
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2SC5606
Abstract: 2SC5606-T1
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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M8E0904E
2SC5606
2SC5606-T1
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2SC5606
Abstract: 2SC5606-T1 ic ta 7698
Text: PRELIMINARY DATA SHEET NPN SILICON RF TRANSISTOR 2SC5606 NPN SILICON RF TRANSISTOR FOR LOW NOISE • HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD FEATURES • Suitable for high-frequency oscillation • fT = 25 GHz technology adopted • 3-pin ultra super minimold
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2SC5606
2SC5606-T1
2SC5606
2SC5606-T1
ic ta 7698
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fet B20 p03
Abstract: m7101 M1535 a1 MAXIM 1535 CE KB3886 VT6202 amtek HK-AE-15A1R0 p1488 VIA VT6202
Text: 5 4 3 2 1 Charge & Selector PAGE 28 PWRGD & ENABLEVIO Circuit D ROM & CMS PAGE 34 System Power 5V & 3V MAX1632 TABLET PC - T01 BLOCK DIAGRAM PAGE 8 Vcore Power Maxim 1718 PAGE 30 DEBUG TDM Port PAGE 33 VGA & DDR Power D PAGE 8 DDR PAGE 31 DDR on Board CRUSOE
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MAX1632
TM5800
VT6202
IEEE1394
VT6306
CB1410
8100B
M1535+
M5823
R546R547
fet B20 p03
m7101
M1535 a1
MAXIM 1535 CE
KB3886
VT6202
amtek
HK-AE-15A1R0
p1488
VIA VT6202
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p628
Abstract: P930-06 P1465-02 P1465-01 P586 P587 BY100
Text: Glass Bulb Types & Assembly Types FOR FLAME MONITORS C h aracteristics * 5 at 25 °C Absolute Maximum Ratings T ype No. O u t line Applied V o ltag ë at 2 5 °C (Vdc) Allowable Power Dissipation at 25°C Am bient T em peratu re Ta (mW) (°C ) Peak Response
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P93005
P930-05,
P1465-01
P930-06,
P1465-02
0004b53
p628
P930-06
P1465-02
P1465-01
P586
P587
BY100
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EATON CM20A
Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid ing complete service, fast delivery and in-depth inventory. Our main
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P621
Abstract: P201B
Text: Metal Case Types Absolute Maximum Ratings T yp e No. O u t line A pplied V o lta g e a t 2 5 °C Allo w ab le Pow er Dissipation at 2 5 °C C h aracteristics * 5 at 25°C A m bient T em peratu re Ta Peak Response W avelength xp : Typ. (nm) C ell R esistan ce * i
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P1114-01
P1114-04
P1465
0004bS2
P621
P201B
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P930-06
Abstract: No abstract text available
Text: Glass Bulb Types & Assembly Types FOR FLAME MONITORS C h a ra cte ristics * 5 at 25°d Absolute Maximum Ratings Type No. O ut line A pplied V oltage at 25°C Allowable Power Dissipation at 25°C (Vdc) (mW) A m bient T em perature Ta (°C) Peak Response
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P930-05
P930-06
P1465-01
P1465-02
P930-06,
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thyristor TAG 8506
Abstract: nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719
Text: TABLE OF CONTENTS Catalog Number 11Q New For 1989! • Over 7,900 New Products • 13 New M anufacturers PRODUCT INDICES tiamp*,'fminei forskSockets ' Solder Equipment endTtfob ] vriHp\< lint Equipment, Panel Meters, Aejulpmant, i A P R E M IE R C o m p an y
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11PM104
thyristor TAG 8506
nais inverter vf 7f operation manual
922AA1Y-A4P
optek A400 817
Sprague 513D
sprague 926c
Sprague 195P
Rapa relay 12vdc
triac tag 8948
Mascot 719
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P930-05
Abstract: No abstract text available
Text: CdS Cells CdS Photoconductive Cells ¡’aonaps Type Mo Peak Semibviw wsueiangffl ip {nm* (m«i (U nle ss o th e rw ise noted, Typ. Ta-~25 C) B fw ita w *2 10 a Mfo. Max. fH i, O if Min. nis^Tmw Fall Time t if 0 to 63 % IM to J7N n» to /» T *3 r: iM tii
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P1114-04
P1465
P201D
P3872
P201D-5R
P380-5R
P722-5R
P1082-03
Pt201
P1201-01
P930-05
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