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    P1 MARKING CODE DPAK Search Results

    P1 MARKING CODE DPAK Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK6R9P08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 62 A, 0.0069 Ohm@10V, DPAK Visit Toshiba Electronic Devices & Storage Corporation
    TK5R1P08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 84 A, 0.0051 Ohm@10V, DPAK Visit Toshiba Electronic Devices & Storage Corporation
    54LS42/BEA Rochester Electronics LLC 54LS42 - DECODER, BCD-TO-DECIMAL - Dual marked (M38510/30703BEA) Visit Rochester Electronics LLC Buy
    5446/BEA Rochester Electronics LLC 5446 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01006BEA) Visit Rochester Electronics LLC Buy
    5447/BEA Rochester Electronics LLC 5447 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01007BEA) Visit Rochester Electronics LLC Buy

    P1 MARKING CODE DPAK Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CDBD620-G

    Abstract: CDBD640-G CDBD650-G CDBD660-G CDBD680-G CDBD6100-G
    Text: Chip Schottky Barrier Rectifier CDBD620-G Thru. CDBD6100-G Reverse Voltage: 20 to 100 Volts Forward Current: 6.0 Amp RoHS Device DPAK Features -Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.


    Original     		PDF CDBD620-G CDBD6100-G mQW-BB032 CDBD620-G SK620Y CDBD640-G SK640Y CDBD650-G SK650Y CDBD660-G CDBD640-G CDBD650-G CDBD660-G CDBD680-G CDBD6100-G

    Untitled

    Abstract: No abstract text available
    Text: Chip Schottky Barrier Rectifier CDBD620-G Thru. CDBD6100-G Reverse Voltage: 20 to 100 Volts Forward Current: 6.0 Amp RoHS Device DPAK Features -Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.


    Original     		PDF CDBD620-G CDBD6100-G CDBD620-G SK620Y CDBD640-G SK640Y CDBD650-G SK650Y CDBD660-G SK660Y

    Untitled

    Abstract: No abstract text available
    Text: SMD Schottky Barrier Rectifiers CDBD540-HF Thru. CDBD5200-HF Reverse Voltage: 40 to 200 Volts Forward Current: 5.0 Amp RoHS Device Halogen Free Features TO-252/DPAK - Batch process design, excellent power dissipation offers better reverse leakage current and thermal


    Original     		PDF CDBD540-HF CDBD5200-HF O-252/DPAK MIL-STD-19500 CDBD5040-HF SK540Y CDBD5045-HF SK545Y CDBD5060-HF SK560Y

    Untitled

    Abstract: No abstract text available
    Text: COMCHIP Chip Schottky Barrier Rectifier SMD Diodes Specialist CDBD620-G Thru. CDBD6100-G Reverse Voltage: 20 to 100 Volts Forward Current: 6.0 Amp RoHS Device DPAK Features -Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.


    Original     		PDF CDBD620-G CDBD6100-G CDBD620-G SK620Y CDBD640-G SK640Y CDBD650-G SK650Y CDBD660-G SK660Y

    fdd 03 15 marking

    Abstract: Multilayer metallized paper CBVK741B019 F63TNR FDD6680 FZ9935
    Text: TO-252 DPAK Tape and Reel Data TO-252 (DPAK) Packaging Configuration: Figure 1.0 Packaging Description: ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC SENSITIVE DEVICES Embossed ESD Marking N NTIO AT TE AUTIONS OBSE TO-252 parts are shipped in tape. The carrier tape is


    Original     		PDF O-252 O-252 164mm fdd 03 15 marking Multilayer metallized paper CBVK741B019 F63TNR FDD6680 FZ9935

    TS2950CT-3.3

    Abstract: TS2950
    Text: TS2950/A 150mA Ultra Low Dropout Voltage Regulator TO-92 Pin Definition: 1. Output 2. Ground 3. Input TO-252 DPAK Pin Definition: 1. Input 2. Ground 3. Output General Description The TS2950/A are low power voltage regulators. These devices are excellent choice for use in battery-powered


    Original     		PDF TS2950/A 150mA O-252 TS2950/A TS2950CT-3.3 TS2950

    STD25NF20

    Abstract: 25NF2
    Text: STD25NF20 N-channel 200 V, 0.10 Ω typ., 18 A STripFET low gate charge Power MOSFETs in a DPAK package Datasheet - production data Features TAB Order code VDS @ TJmax RDS on max ID PTOT STD25NF20 200 V 0.125 Ω 18 A 110 W • Extremely low gate charge


    Original     		PDF STD25NF20 DocID024372 STD25NF20 25NF2

    11N65M5

    Abstract: STB11N65M5 STF11N65M5 stf11n65 11n65 STP11N65M5 STD11N65M5 STMicroelectronics marking code date diode
    Text: STB11N65M5, STD11N65M5 STF11N65M5, STP11N65M5 N-channel 650 V, 0.43 Ω, 9 A MDmesh V Power MOSFET in D2PAK, DPAK, TO-220FP and TO-220 packages Preliminary data Features TAB TAB Order code VDSS @ TJmax RDS on max 710 V < 0.48 Ω 2 ID STF11N65M5 DPAK D2PAK


    Original     		PDF STB11N65M5, STD11N65M5 STF11N65M5, STP11N65M5 O-220FP O-220 STB11N65M5 STF11N65M5 STP11N65M5 11N65M5 stf11n65 11n65 STMicroelectronics marking code date diode

    Untitled

    Abstract: No abstract text available
    Text: STD26P3LLH6 P-channel 30 V, 0.024 Ω typ., 12 A, STripFET VI DeepGATE™ Power MOSFET in a DPAK package Datasheet — preliminary data Features Order code STD26P3LLH6 VDSS RDS on max 30 V (1) 0.030 Ω ID PTOT TAB 12 A 40 W 1. @ VGS= 10 V • RDS(on) * Qg industry benchmark


    Original     		PDF STD26P3LLH6

    d25nf

    Abstract: d25nf10l D25NF10LA d25nf10
    Text: STD25NF10LA N-channel 100 V, 0.030 Ω, 25 A DPAK STripFET II Power MOSFET Features Order code VDSS RDS on max ID STD25NF10LA 100 V < 0.035 Ω 25 A • Exceptional dv/dt capability ■ 100% avalanche tested ■ Logic level device TAB 3 1 DPAK Applications


    Original     		PDF STD25NF10LA d25nf d25nf10l D25NF10LA d25nf10

    7662

    Abstract: No abstract text available
    Text: STD35NF06L N-channel 60 V, 0.014 Ω, 35 A STripFET II Power MOSFET in a DPAK package Datasheet — production data Features Order code VDSS RDS on ID STD35NF06LT4 60V <0.017Ω 35A • Low threshold drive ■ Gate charge minimized TAB 3 1 Applications ■


    Original     		PDF STD35NF06L STD35NF06LT4 7662

    3543

    Abstract: No abstract text available
    Text: MJD31C Low voltage NPN power transistor Datasheet − production data Features • ■ Surface-mounting TO-252 power package in tape and reel TAB Complementary to the PNP type MJD32C 3 Application ■ 1 General purpose linear and switching equipment DPAK TO-252


    Original     		PDF MJD31C O-252 MJD32C O-252 MJD31C MJD31CT4 3543

    D35NF06L

    Abstract: No abstract text available
    Text: STD35NF06L N-channel 60 V, 0.014 Ω, 35 A STripFET II Power MOSFET in a DPAK package Datasheet — production data Features Order code VDSS RDS on ID STD35NF06LT4 60V <0.017Ω 35A • Low threshold drive ■ Gate charge minimized TAB 3 1 Applications ■


    Original     		PDF STD35NF06L STD35NF06LT4 D35NF06L

    d1 marking code dpak transistor

    Abstract: MJD32CT4
    Text: MJD32C Low voltage PNP power transistor Datasheet − production data Features • ■ Surface-mounting TO-252 power package in tape and reel TAB Complementary to the NPN type MJD31C 3 Application ■ 1 General purpose linear and switching equipment DPAK TO-252


    Original     		PDF MJD32C O-252 MJD31C O-252 MJD32C MJD32CT4 d1 marking code dpak transistor MJD32CT4

    d60nf55l

    Abstract: No abstract text available
    Text: STD60NF55LA N-channel 55 V, 0.012 Ω, 60 A DPAK STripFET II Power MOSFET Features • Order code VDSS RDS on ID STD60NF55LA 55V <0.015Ω 60A Low threshold drive 3 1 Applications ■ Switching application ■ Automotive DPAK Description This Power MOSFET has been developed using


    Original     		PDF STD60NF55LA D60NF55LA d60nf55l

    STD4NK100Z

    Abstract: No abstract text available
    Text: STD4NK100Z N-channel 1000 V, 5.6 Ω, 2.2 A SuperMESH Power MOSFET Zener-protected in DPAK package Datasheet — preliminary data Features Order code VDSS RDS on max ID STD4NK100Z 1000 V < 6.8 Ω 2.2 A TAB • Extremely high dv/dt capability ■ 100% avalanche tested


    Original     		PDF STD4NK100Z STD4NK100Z

    STD86N3LH5

    Abstract: No abstract text available
    Text: STD86N3LH5 N-channel 30 V, 0.0045 Ω , 80 A, DPAK STripFET V Power MOSFET Features Order code VDSS RDS on max ID STD86N3LH5 30 V < 0.005 Ω 80 A • RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ High avalanche ruggedness ■


    Original     		PDF STD86N3LH5 STD86N3LH5

    Untitled

    Abstract: No abstract text available
    Text: STD80N6F6 Automotive-grade N-channel 60 V, 4.4 mΩ typ., 80 A STripFET VI DeepGATE™ Power MOSFET in a DPAK package Datasheet - production data Features 7$% Order code VDS RDS on max. ID STD80N6F6 60 V 5 mΩ 80 A(1) 1. Current limited by package  • Designed for automotive applications and


    Original     		PDF STD80N6F6 AEC-Q101 DocID023471

    Untitled

    Abstract: No abstract text available
    Text: STD60NF55LA N-channel 55 V, 0.012 Ω, 60 A DPAK STripFET II Power MOSFET Features • Order code VDSS RDS on ID STD60NF55LA 55V <0.015Ω 60A Low threshold drive 3 1 Applications ■ Switching application ■ Automotive DPAK Description This Power MOSFET has been developed using


    Original     		PDF STD60NF55LA

    STD44N4LF6

    Abstract: STripFET
    Text: STD44N4LF6 N-channel 40 V, 8.9 mΩ, 44 A DPAK STripFET VI DeepGATE™ Power MOSFET Features Order code VDSS RDS on max ID STD44N4LF6 40 V 12.5 mΩ 44 A • 100% avalanche tested ■ Logic level drive 3 1 Application ■ Switching applications ■ Automotive


    Original     		PDF STD44N4LF6 44N4LF6 STD44N4LF6 STripFET

    Untitled

    Abstract: No abstract text available
    Text: STD25NF20 Automotive-grade N-channel 200 V, 0.10 Ω typ., 18 A STripFET low gate charge Power MOSFET in a DPAK package Datasheet - production data Features TAB Order code VDS @ TJmax RDS on max ID PTOT STD25NF20 200 V 0.125 Ω 18 A 110 W • Designed for automotive applications and


    Original     		PDF STD25NF20 AEC-Q101 DocID024372

    Untitled

    Abstract: No abstract text available
    Text: STD9NM50N N-channel 500 V, 0.73 Ω, 5 A MDmesh II Power MOSFET in DPAK Features Order code VDSS@TJMAX RDS on max. STD9NM50N 550 V ID < 0.79 Ω 5A • 100% avalanche tested ■ Low input capacitances and gate charge ■ Low gate input resistance 3 1 DPAK


    Original     		PDF STD9NM50N

    Untitled

    Abstract: No abstract text available
    Text: STD26P3LLH6 P-channel 30 V, 0.024 Ω typ., 12 A, STripFET VI DeepGATE™ Power MOSFET in a DPAK package Datasheet - production data Features TAB 2 3 1 Order code VDSS RDS on max ID PTOT STD26P3LLH6 30 V 0.030 Ω(1) 12 A 40 W 1. @ VGS= 10 V • RDS(on) * Qg industry benchmark


    Original     		PDF STD26P3LLH6 DocID023574

    Untitled

    Abstract: No abstract text available
    Text: STD35N3LH5 N-channel 30 V, 12.5 mΩ, 35 A, DPAK STripFET V Power MOSFET Features • Order code VDSS RDS on max ID STD35N3LH5 30 V < 16 mΩ 35 A 100% avalanche tested 3 ■ Surface mounting DPAK (TO-252) ■ Low gate drive power losses 1 DPAK Applications


    Original     		PDF STD35N3LH5 O-252) STD35N3LH5 D35N3LH5