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    P-N SILICON DIODE Search Results

    P-N SILICON DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    P-N SILICON DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N697

    Abstract: No abstract text available
    Text: 2N697 Silicon N-P-N Planar Transistor. 1.61 Transistors Bipolar Silicon NPN Power Tra. Page 1 of 1 Enter Your Part # Home Part Number: 2N697 Online Store 2N697 Diodes Silicon N -P-N Planar Transistor. Transistors Enter code INTER3 at checkout.* Integrated Circuits


    Original     		PDF 2N697 2N697 O-205AD com/2n697

    2N6079

    Abstract: No abstract text available
    Text: 2N6079 High-voltage high-power silicon N-P-N transistor. 8.14 Transistors Transistors B. Page 1 of 2 Enter Your Part # Home Part Number: 2N6079 Online Store 2N6079 Diodes High-voltage high-power silicon N-P-N transistor. Transistors Integrated Circuits Optoelectronics


    Original     		PDF 2N6079 2N6079 com/2n6079

    2N5323

    Abstract: No abstract text available
    Text: 2N5323 General Purpose P-N-P Silicon Power Transistor. 4.00 Transisto. 1 of 1 Home Part Number: 2N5323 Online Store 2N5323 Diodes G eneral Purpo s e P- N-P Silic o n Po w er Trans is t o r. Transistors


    Original     		PDF 2N5323 com/2n5323 2N5323

    2N5782

    Abstract: No abstract text available
    Text: 2N5782 Silicon P-N-P epitaxial-base transistor. -65V 10W. 16.19 Transis. 1 of 2 Home Part Number: 2N5782 Online Store 2N5782 Diodes Silic o n P-N- P epit ax ial- bas e t rans is to r. -6 5 V 1 0 W.


    Original     		PDF 2N5782 com/2n5782 2N5782

    2N3791

    Abstract: No abstract text available
    Text: 2N3791 Silicon P-N-P Epitaxial-base High Power Transistor. -60V - 150. 1 of 1 Home Part Number: 2N3791 Online Store 2N3791 Diodes Silic o n P- N-P Epit axial-bas e High Po w er Trans is t o r. - 6 0 V -


    Original     		PDF 2N3791 com/2n3791 2N3791

    Untitled

    Abstract: No abstract text available
    Text: 2N3792 Silicon P-N-P Epitaxial-base High Power Transistor. -80V - 150. 1 of 1 Home Part Number: 2N3792 Online Store 2N3792 Diodes Silic o n P- N-P Epit axial-bas e High Po w er Trans is t o r. - 8 0 V -


    Original     		PDF 2N3792 com/2n3792 2N3792

    40841

    Abstract: 40841 MOSFET CA3096AE CA3096 CA3096A CA3096AM CA3096AM96 CA3096C CA3096CE CA3096E
    Text: CA3096 S E M I C O N D U C T O R N-P-N/P-N-P Transistor Array March 1993 Applications Description • Five-Independent Transistors - Three N-P-N and - Two P-N-P The CA3096C, CA3096, and CA3096A are general purpose high voltage silicon transistor arrays. Each array consists of


    Original     		PDF CA3096 CA3096C, CA3096, CA3096A CA3096A, CA3096C 40841 40841 MOSFET CA3096AE CA3096 CA3096AM CA3096AM96 CA3096CE CA3096E

    1377 transistor

    Abstract: 2N5956 transistor 2N5956
    Text: 2N5956 Silicon P-N-P medium-power transistor. -50V 40W. 13.77 Transi. 1 of 2 Home Part Number: 2N5956 Online Store 2N5956 Diodes Silic o n P-N- P m edium - po w er t ransis t o r. - 5 0 V 4 0 W. Transistors


    Original     		PDF 2N5956 com/2n5956 2N5956 1377 transistor transistor 2N5956

    2N5240

    Abstract: Catalog Bipolar Transistor
    Text: 2N5240 High-voltage Silicon N-P-N Transistor. 9.95 Transistors Bipolar . 1 of 2 Home Part Number: 2N5240 Online Store 2N5240 Diodes High- vo lt age Silic o n N- P- N Trans ist o r. Transistors Enter code INTER3 at


    Original     		PDF 2N5240 com/2n5240 2N5240 Catalog Bipolar Transistor

    2n4037 transistor

    Abstract: NPN Transistor 2n4037 2n4037
    Text: 2N4037 Medium Power Silicon N-P-N Planar Transistor. 6.90 Transistor. 1 of 1 Home Part Number: 2N4037 Online Store 2N4037 Diodes M edium Po w er Silic o n N- P- N Planar Trans is t o r. Transistors


    Original     		PDF 2N4037 com/2n4037 2N4037 2n4037 transistor NPN Transistor 2n4037

    TRANSISTOR C 5387

    Abstract: C 5387
    Text: Ordering num ber:E N 5387 _ FX901 N o.5387 P N P Ep itaxial Plan ar Silicon Transistor N-Channel M O S Silicon F E T Silicon Schottky B a rrie r Diode DC/DC C onverter A pplications F e a tu re s •Composite type w ith a P N P transistor and a 2.5V drive N-channel M O SFE T w ith a built-in low


    OCR Scan     		PDF FX901 TRANSISTOR C 5387 C 5387

    Untitled

    Abstract: No abstract text available
    Text: _ J v _ BDT61;61A BDT61B;61C SILICON DARLINGTON POWER TRANSISTORS N-P-N silicon power transistors in monolithic Darlington circuit for audio output stages and general purpose amplifier applications. P-N-P complements are BDT60, 60A, 60B and 60C.


    OCR Scan     		PDF BDT61 BDT61B BDT60, BDT61 bbS3T31 0034bfll 7Z82097 QQ34bfl2

    BDT60

    Abstract: kia 494 BDT60B BDT61 BDT61A BDT61B BDT61C transistor 2TH transistor d 1991 ar
    Text: BDT60;60A BDT60B;60C J ^ SILICON DARLINGTON POWER TRANSISTORS P-N-P silicon power transistors in monolithic Darlington circuit for audio output stages and general purpose amplifier applications. N-P-N complements are BDT61, BDT61A, BDT61B and BDT61C. QUICK REFERENCE DATA


    OCR Scan     		PDF BDT60 BDT60B BDT61, BDT61A, BDT61B BDT61C. O-220. 0D34bb7 kia 494 BDT61 BDT61A BDT61C transistor 2TH transistor d 1991 ar

    T2D 22 diode

    Abstract: T2D 56 DIODE T2D DIODE diode t2d 05 T2D 70 diode
    Text: BDT60;60A BDT60B;60C y v SILICON DARLINGTON POWER TRANSISTORS P-N-P silicon power transistors in monolithic Darlington circuit fo r audio output stages and general purpose amplifier applications. N-P-N complements are BDT61, BDT61A, BDT61B and BDT61C. QUICK REFERENCE DATA


    OCR Scan     		PDF BDT60 BDT60B BDT61, BDT61A, BDT61B BDT61C. BDT60 T2D 22 diode T2D 56 DIODE T2D DIODE diode t2d 05 T2D 70 diode

    MBD702

    Abstract: MBD502
    Text: MBD502 silicon MBD702 HIG H-VOLTAG E SILICON HOT-CARRIER DETECTOR AND SWITCHING DIODES SILICON HOT-CARRIER DIODE (SCHOTTKY BARRIER DIODE) 5 0 -7 0 V O L T S . . . d esig n ed p r im a rily fo r h ig h -e ffic ie n c y U H F an d V H F d e te c to r a p p lic a tio n s.


    OCR Scan     		PDF MBD502 MBD702 MountinD502, MBD702 MBD502

    U08C

    Abstract: G016 CASE318-07
    Text: MOTOROLA SEMICONDUCTOR MMBV3700L MPN3700 TECHNICAL DATA SILICON PIN SWITCHING DIODES HIGH VOLTAGE SILICON PIN DIODES . . . d e s ig n e d p rim a rily fo r V H F b an d sw itch in g a p p licatio n s but also su ita b le fo r use in g e n e ra l-p u rp o s e sw itch in g and a tte n u a to r


    OCR Scan     		PDF MMBV3700L MPN3700 U08C G016 CASE318-07

    TLP581

    Abstract: TLP580 100KC E67349 VDE0730-2P
    Text: TLP580, TLP58I G aAlAs I n frared Emi t t i n g Diode & N P N Silicon P hoto - T r a n s i s o t r The TOSHIBA TLP580 and TLP581 consists of a gallium aluminum arsenide, infrared emitting diode coupled with a silicon photo transistor in a dual in-line package. TLP580 is no-base internal connection for highEMI environments,


    OCR Scan     		PDF TLP580, TLP58 TLP580 TLP581 1200Vdc 750Vac 900Vdc DIN40045 100KC E67349 VDE0730-2P

    Untitled

    Abstract: No abstract text available
    Text: NEC SILICON SW ITCHING DIODES ELECTRON DEVICE 1 S2837,1 S2838 HIGH SPEED SW ITCHING SILICON EPITAXIAL DOUBLE DIODES . COMMON CATHODE M IN I MOLD FEATURES PACKAGE DIMENSIONS • L o w c a p a c ita n c e : Ct = 1.1 p F T Y P . in m illim e te rs o a * -n o


    OCR Scan     		PDF S2837 S2838

    BDT61

    Abstract: transistor BD 512 BDT60 BDT61B IEC134 1FC15
    Text: BDT61;61A BDT61B;61C _ JV SILICON DARLINGTON POWER TRANSISTORS N-P-N silicon power transistors in monolithic Darlington circuit for audio output stages and general purpose am plifier applications. P-N-P complements are B D T 60, 60A , 60B and 60C. Q U IC K R E F E R E N C E D A T A


    OCR Scan     		PDF BDT61 BDT61B BDT60, T0-220. mount986 March-1986 bb53T31 GD34b03 transistor BD 512 BDT60 IEC134 1FC15

    1SV80

    Abstract: NEC DO-35 bectron
    Text: NEC PIN DIODE ELECTRON DEVICE 1SV80 VHF/UHF RF ATTENUATIG AND SWITCHING SILICON PIN DIODE D ESCR IPTIO N A N D A P P LIC A T IO N S FE A TU R E S • Low cost. The 1SV80 silicon PIN diode, especially designed fo r V H F /U H F band sw itching, attenuating.


    OCR Scan     		PDF 1SV80 1SV80 DO-35 NEC DO-35 bectron

    5BE1

    Abstract: bdt61 Darlington NPN Silicon Diode
    Text: BDT61;61A BDT61B;61C PHILIPS INTERNATIONAL SbE ]> I 711002 3 0 0 4 3 5 5 0 Ö44 » P H I N SILICON DARLINGTON POWER TRANSISTORS N-P-N silicon power transistors in monolithic Darlington circuit for audio output stages and general purpose amplifier applications.


    OCR Scan     		PDF BDT61 BDT61B BDT60, O-220. 7110fl2b G04B527 B2097 5BE1 Darlington NPN Silicon Diode

    ic sj 2038

    Abstract: sj 2038
    Text: O rd e rin g n u m b e r :EN 3 1 2 9 2SB1323/2SD1997 No. 3129 P N P /N P N E pitaxial P lanar Silicon T ransistors Compact Motor Driver Applications F eatu res Contains input resistance(Ri , base-to-emitter resistance(RBE)Contains diode between collector and em itter.


    OCR Scan     		PDF 2SB1323/2SD1997 2SB1323 250mm2 6089MO 2SD1997 ic sj 2038 sj 2038

    1SS97

    Abstract: NEC DO-35 NEC 1SS97
    Text: NEC MIXER DIODE ELECTRON DEVICE 1S S 97 UHF MIXER SILICON EPITAXIAL SCHOTTKY BARRIER DIODE FE A T U R E S D E SC R IP T IO N A N D A P P LIC A T IO N S Th e 1 S S9 7 is silicon epitaxial schottky barrier diode, espe­ • Sm all size glass package. D O -35 T Y P E


    OCR Scan     		PDF DO-35 1SS97 1SS97 NEC DO-35 NEC 1SS97

    Untitled

    Abstract: No abstract text available
    Text: Ordering number: EN5052 FX802 N o.5052 TR : P N P E p itax ial P la n a r Silicon T ra n sisto r SBD : Schottky B a rrie r Diode Twin Type • C athode Common DC-DC Converter F e a tu re s • C om plex type of a low s a tu ra tio n voltage, high speed sw itching and larg e c u rre n t P N P tra n sisto r and


    OCR Scan     		PDF EN5052 FX802 2SB1302 SB20W