16 pin output port
Abstract: No abstract text available
Text: 3 E Bectronics bh Wide Band Power S p litte r • • • • • • 8 and 16 port versions available in surface mount or pin mount ± IdB from 5 Mhz to 750 Mhz Part Mirber 180-0332: 8 port through hole Part Number 180-0333: 8 port £MD Part Mirber 180-0334: 16 port through hole
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-12dB
-15dB
-20dB
750MHz
750MHz
16 pin output port
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Untitled
Abstract: No abstract text available
Text: fift Nihon Inter Bectronics Corporation 1.7A Avg 60 Volts X SBD EA20QS06 EA20QS06-F ^ MAXIMUM RATINGS Rating •OUTLINE DRAWING(mm ' . Type: Symbol''''-'-^ E A 20Q S06 E A 2 0 Q S 0 6 -F Unit V RRM 60 V 65 V > < '■) & L G - 7 $ ytf if Repetitive Peak Reverse Voltage
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EA20QS06
EA20QS06-F
l30kHj
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Untitled
Abstract: No abstract text available
Text: Thit drawing iaroirao proprietary design righto at Tyaa Bectronkm Corporation. ead oB M n maaotaotura, raprodoetiaa, w* and tolo righto m * rd u £&• tamo ant expraeaty remerved. R it oubmittod tor m apae&Se purpooa m ad thm •z y fc * . a&i« pntoaaOooar
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C6643227A
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1SV77
Abstract: No abstract text available
Text: SEC SILICO N PIN DIODE BECTRON DEVICE D ESC R IP T IO N 1SV77 The 1SV77 is designed fo r RF variable attenuator and sw itching P A C K A G E DIM EN SION S c irc u it applications in FM, car radio and CB. in m illim e te rs in che s FEATU RES 5.2 MAX. (0.204 MAX.)
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1SV77
1SV77
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Untitled
Abstract: No abstract text available
Text: NEC NEC Bectronics , 31 .o ^ s - b it MASK-PROGRAMMABLE NMOS ROM Block Diagram Description The JX.PD231000/M-PD231000-1 are 1,048,576-bit Read only Memories utilizing NMOS silicon gate technology. The devices are edge-enabled, organized as 131,072 words by
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PD231000/M-PD231000-1
576-bit
300ns
350ns)
27128s.
27128s
27128s,
IXPD231000C
231000DS-10-84-CAT-L
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Untitled
Abstract: No abstract text available
Text: P r o d u c t S p e cifica tio n t t f C O j Bectronii 108-5471 » ft» « M SP 26 JA N 07 Rev.O .040 Series Multi-Lock Connector wire to wire (.040MLC) .040 v 'h X •7 J l t f •3* :* »SE«bS)(.040M LC) Contents F irst 9 pages following this top sh eet
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040MLC)
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D01002-2
Abstract: D01002
Text: GOULD 4U55916 GOULD S E M IC O N D U C T O R S E M IC O N D U C T O R D IV D 3E D IV D 03E -> GOUU3 | H O S S T lt . 0 D 1 0 D 1 7 E J 10017 D CEPT Digital Tmnk Interface Circuit Bectron,es Preliminary Data Sheet S8978 Features A p p lic a tio n s □ Compatible with CCITT Recommendation G732
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4U55916
S8978
D01002-2
D01002
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2SD780
Abstract: 7802S
Text: NEC SILICON TRANSISTORS BECTRON DEVICE 2SD780,2SD780A AUDIO FREQUENCY POWER AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR M IN I MOLD DESCRIPTION PACKAGE DIMENSIONS The 2S0780, 2SD780A are designed fo r use in small type equipments espe in m illim eters 2 .8 + 0 2
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2SD780
2SD780A
2S0780,
2SD780A
2SB736,
2SB736A
Diss50
--84M
7802S
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Untitled
Abstract: No abstract text available
Text: CO NOTES: 1 .MATERIAL: HOUSiNG : THERMOPLASTIC CONTACT : COPPER ALLOY. SHELL : COPPER ALLOY. CD O O + ü 15.2 0 1 4.50 2 .FINISH: CONTACT: GOLD PLATING SEE TABLE ON CONTACT AREA TIN-LEAD ON SOLDER TAILS. NICKEL UNDERPLATED OVER ALL SHELL: NICKEL PLATING OVER COPPER.
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36Kg/R
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Triax 4 lug
Abstract: No abstract text available
Text: RED INDICATES M U . DATA OXTAIEBa XN THIS nm i e f f « PROPRIETARY TO TRCM'UIUi B-ECTRONin INC. AND SHAU. KIT BE n rtn n m CEPIB3 DR USED r k pnoa n p o f f i s m am factus without BPRESS MRITTB4 PGRHISSJDN. REV C TABLE 1 DASH NO -1 -2 -3 -4 -5 -B -7 -B
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1111B
Triax 4 lug
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CT1R
Abstract: 11EQS03L
Text: SCHOTTKY BARRIER DIODE 11EQS03L i a / sov FEA TU RES 2.7U06 .DIA MAX o Miniature Size o Extremely Low Forward Voltage Drop o Low Power Loss, High Efficiency o High Surge Capability 0 30 Volts thru 100 Volts Types Available 3.0U2) MAX 026mm and 52mm Inside Tape Spacing
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11EQS03L
026mm
00D175Ã
CT1R
11EQS03L
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NSD03B10
Abstract: NSD03B20 NSD03B40 DIODE 3A rectifier diode 3A
Text: SILICON RECTIFIER DIODE 3a / 1 0 0 ~ 4 0 0 v nsdo 3b io nsd 03B20 nsd 03 B 40 FEATURES o Surface Mounting Device ° High Surge Capability o Low Forward Voltage Drop ° Low Reverse Leakage Current ° Packaged in 16mm Tape and Reel ° Not Rolling During Assembly
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3a/100
nsd03b20
nsd03b40
NSD03B10
bbl5123
NSD03B40
DIODE 3A
rectifier diode 3A
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E6M3
Abstract: C8D20PF29032 C8D35PF29023
Text: ThomasiBetts Cardedge Press-Fit .100" CENTER-TO-CENTER .200" ROW-TO-ROW PRESS-FIT WITHOUT STANDOFFS T O LB49571 ES0960 P h y sic a l P r o per ties In s u la tio n R esistance: 5000 megohms minimum. C o n ta c t R e te n tio n In to PCB: 5 lbs. In s e rtio n /W ith d ra w a l F o rc e : 8 o z./2 oz. average
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LB49571
ES0960
VD600
PP29022
08O0DPF29O22
C8D06PF29023
C8D06PF29033
CBD10PF29033
C8D12PF29033
C8D15PF29033
E6M3
C8D20PF29032
C8D35PF29023
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E10DS2
Abstract: E10DS4
Text: SILICON RECTIFIER DIODE ia / io o ~ 4 oov e io d s i FEATURES e io d s 1 8 071, 1.4(.055 OTO-243AB (SOT-89) Case .L 1.2(.047) 0.81.031) ° Low Reverse Leakage Current e io d s 4 1.6I.0631MAX 2.4(,094) I [ 4.251167) ° Surface Mount Device o Low Forward Voltage Drop
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OTO-243AB
OT-89)
E10DS2
E10DS4
E10DS4
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khm 313
Abstract: d1994
Text: ADE-203-226 Z Rev. 0 Mar. 31,1994 Product Preview HM67M1864 Series (Target Spec.) 64K x 18 Bits Synchronous Fast Static RAM With Burst Counter and Self-Timed Write Package Outline D escription TheHM67B1864 is a 1,179,648 bit density high performance synchronous static random access memory
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HM67M1864
TheHM67B1864
680XX
D1994
494/500/Kinkos/M
M12T071
khm 313
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PLS161
Abstract: PLS173
Text: REVISIONS LTR DATE YR-MO-QA DESCRIPTION Change in table I, Iq Z parameter. 3 and 4. Also changes to footnotes APPROVED 1989 MAY 18 Editorial changes throughout. REV SHEET REV SHEET REV STATUS OF SHEETS REV SHEET 10 11 12 PMIC N/A STANDARDIZED MILITARY DRAWING
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5962-E1247
5962-8850401LX
PLS161/BLX
5962-8850402LX
PLS173/BLX
PLS161
PLS173
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Untitled
Abstract: No abstract text available
Text: Flachstecker, Flach’ itn Kor Tab rnit unsymmetrischer Stahluberfeder, passend zu Junior Power Timer Tabs, 2.8 mm x 0.8 mm, with Asymmetric Cantilever Steel Spring, Mates with Junior Power Timer Ausdnickwerkzeug: Best.-Nr. 968107-1 Part No. 968707-f Produkt-Spezifikation:
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968707-f
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Untitled
Abstract: No abstract text available
Text: P2 CONN TYPE PL20 UPL20 PL40 UPL4Q PL 123 UPL123 NO 1A IB 2A 2B SB PI CONN TYPE X PL71 Pie PL73 PL74 PL75 SCHEMATICS E5 [ El I E2 I E3 I~ s T DASH NUMBER -147 -13 - 1 4 -15 -16 -36 -153 -3 7 -38 -40 -60 -159 -61 -62 -63 -64 -84 -165 -85 -87 -106 -171 -109
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PL75FL
PL375
DIGCL08ED,
AD-PL71-El-PL20
22-08-X
UNLE88
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TN2A
Abstract: No abstract text available
Text: f □ASH NO -1 -2 -3 -4 -5 -6 -7 -8 INCH .005 .030 .600 .625 1.166 2.673 2.699 MODEL NO TN2 TN2A TN2T TN2TA TN2TL TN2TLA TN2FL TN2FLA CONN TYPE 3-LUG THREADED 2-LU6 4-LUG FIG NO ! 3 2 4 1 3 1 3 MM 0.13 0.76 15.24 15.88 29.62 67.89 68.55 S3 te o o o < o Q Q
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Untitled
Abstract: No abstract text available
Text: Preliminary Information AMD Athlon" Processor Data Sheet P u blication # 2 1 0 1 6 Rev: I Issue Date: F eb ru ary 2 0 0 0 AMDP Preliminary Information 2000 Advanced M icro Devices, Inc. All r i g h t s r e s e r v e d . T h e c o n t e n t s o f t h i s d o c u m e n t a r e p r o v i d e d in c o n n e c t i o n w i t h A d v a n c e d
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21016I/0
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10E2
Abstract: 10E1 10E4 10E6 10E8 10E2 diode
Text: SILICON RECTIFIER DIODE ia 1 0 E 1 — 10E8 /10 0 ~ 8 0 0 v « FEATURES ° Miniature Size o Low Forward Voltage Drop o Low Reverse Leakage Current o High Surge Capability ° 52mm Inside Tape Spacing Package Available 2.7 .106 DIA 2.3{.091) 0.9(.035) DIA 0.7(.027)
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IA/100
-10E2
A10E8
bi5123
0001bb3
10E2
10E1
10E4
10E6
10E8
10E2 diode
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10a ultra fast diode
Abstract: C60P10FE C60P20FE
Text: FAST RECOVERY DIODE 66.6A/100— 200V/trr : 50nsec C60P10FE C60P20FE FEATURES ° Similar to TO-247ACX2 Case ° Dual Diodes - Cathode Common 0 Ultra - Fast Recovery ° Low Forward Voltage Drop ° Low Forard Voltage Drop ° High Surge Capability 0 100 Volts thru 600 Volts Types Available
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A/100â
00V/trr
50nsec
C60P10FE
C60P20FE
O-247ACX2
bbl51S3
00Dlb35
10a ultra fast diode
C60P20FE
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transistor marking 1f
Abstract: No abstract text available
Text: DATA SHEET NEC SILICON TRANSISTOR ELECTRON DEVICE GA1L4Z M E D IU M SPEED S W IT C H IN G RESISTOR BUILT-IN TYPE NPN TRAN SISTO R FEATURES PACKAGE DIMENSIONS • Resistor Built-in TYPE in millimeters o—V W — R t = 47 k£2 Ri • Complementary to GN1 L4Z
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TC-2171
1988M
transistor marking 1f
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Untitled
Abstract: No abstract text available
Text: 4 RELEASED T H IS D R A W IN G IS U N P U B L IS H E D . COPYRIGHT 2002 2 3 BY TYCO ELECTRONICS CORPORATION. F O R P U B L IC A T IO N 2002. LOC J A L L R IG H T S R E S E R V E D . R EVIS IO N S D IS T LTR LO U , , v — D y ^ 4 (THROUGH CAVITY CENTER)
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FJOO-0501
180DEG
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