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    P-MOSFET 8 PINS Search Results

    P-MOSFET 8 PINS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    P-MOSFET 8 PINS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Si6441DQ New Product Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET PRODUCT SUMMARY VDS (V) - 30 rDS(on) (W) ID (A) 0.015 @ VGS = - 10 V -8 0.024 @ VGS = - 4.5 V - 6.4 APPLICATIONS D Battery Switch D Load Switch S* TSSOP-8


    Original     		PDF Si6441DQ Si6441DQ-T1 08-Apr-05

    Si6441DQ

    Abstract: Si6441DQ-T1
    Text: Si6441DQ New Product Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET PRODUCT SUMMARY VDS (V) - 30 rDS(on) (W) ID (A) 0.015 @ VGS = - 10 V -8 0.024 @ VGS = - 4.5 V - 6.4 APPLICATIONS D Battery Switch D Load Switch S* TSSOP-8


    Original     		PDF Si6441DQ Si6441DQ-T1 S-03984--Rev. 19-May-03

    Untitled

    Abstract: No abstract text available
    Text: Si4505DY Vishay Siliconix N- and P-Channel MOSFET FEATURES PRODUCT SUMMARY VDS V N-Channel 30 P-Channel -8 RDS(on) (Ω) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC ID (A)


    Original     		PDF Si4505DY 2002/95/EC Si4505DY-T1-E3 Si4505DY-T1-GE3 25electronic 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: Si4501ADY Vishay Siliconix Complementary N- and P-Channel MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel -8 RDS(on) (Ω) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF Si4501ADY 2002/95/EC Si4501ADY-T1-E3 Si4501ADY-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: Si4505DY Vishay Siliconix N- and P-Channel MOSFET FEATURES PRODUCT SUMMARY VDS V N-Channel 30 P-Channel -8 RDS(on) (Ω) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC ID (A)


    Original     		PDF Si4505DY 2002/95/EC Si4505DY-T1-E3 Si4505DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si4501ADY Vishay Siliconix Complementary N- and P-Channel MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel -8 RDS(on) (Ω) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF Si4501ADY 2002/95/EC Si4501ADY-T1-E3 Si4501ADY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si4501ADY Vishay Siliconix Complementary N- and P-Channel MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel -8 RDS(on) (Ω) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF Si4501ADY 2002/95/EC Si4501ADY-T1-E3 Si4501ADY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    858P

    Abstract: F63TNR FDR858P SOIC-16
    Text: February 1999 FDR858P Single P-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features The SuperSOT-8 family of P-Channel Logic Level MOSFETs have been designed to provide a low profile, small footprint alternative to industry standard SO-8 little


    Original     		PDF FDR858P OT-23 858P F63TNR FDR858P SOIC-16

    858P

    Abstract: P-Channel Logic Level PowerTrenchTM MOSFET FDR858P SOIC-16 Single P-Channel, Logic Level, PowerTrench MOSFET
    Text: February 1999 FDR858P Single P-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features The SuperSOT-8 family of P-Channel Logic Level MOSFETs have been designed to provide a low profile, small footprint alternative to industry standard SO-8 little


    Original     		PDF FDR858P OT-23 858P P-Channel Logic Level PowerTrenchTM MOSFET FDR858P SOIC-16 Single P-Channel, Logic Level, PowerTrench MOSFET

    Untitled

    Abstract: No abstract text available
    Text: February 1999 FDR858P Single P-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features The SuperSOT-8 family of P-Channel Logic Level MOSFETs have been designed to provide a low profile, small footprint alternative to industry standard SO-8 little


    Original     		PDF FDR858P 028ications

    Untitled

    Abstract: No abstract text available
    Text: New Product Si1315DL Vishay Siliconix P-Channel 8 V D-S MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC PRODUCT SUMMARY VDS (V) -8 RDS(on) ()


    Original     		PDF Si1315DL 2002/95/EC OT-323 SC-70 Si1315DL-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    SI1315DL

    Abstract: lj marking
    Text: New Product Si1315DL Vishay Siliconix P-Channel 8 V D-S MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC PRODUCT SUMMARY VDS (V) -8 RDS(on) ()


    Original     		PDF Si1315DL 2002/95/EC OT-323 SC-70 Si1315DL-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. lj marking

    Untitled

    Abstract: No abstract text available
    Text: New Product Si1315DL Vishay Siliconix P-Channel 8 V D-S MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC PRODUCT SUMMARY VDS (V) -8 RDS(on) ()


    Original     		PDF Si1315DL 2002/95/EC OT-323 SC-70 Si1315DL-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: New Product Si1315DL Vishay Siliconix P-Channel 8 V D-S MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC PRODUCT SUMMARY VDS (V) -8 RDS(on) ()


    Original     		PDF Si1315DL 2002/95/EC OT-323 SC-70 Si1315DL-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU.

    Si6459BDQ

    Abstract: Si6459BDQ-T1
    Text: Si6459BDQ Vishay Siliconix New Product P-Channel 60-V D-S MOSFET PRODUCT SUMMARY VDS (V) −60 60 FEATURES rDS(on) (W) ID (A) 0.115 @ VGS = −10 V −2.7 0.150 @ VGS = −4.5 V −2.4 D TrenchFETr Power MOSFET S* TSSOP-8 D 1 S 2 S 3 G 4 G 8 D 7 S D * Source Pins 2, 3, 6 and 7


    Original     		PDF Si6459BDQ Si6459BDQ-T1 S-32220--Rev. 03-Nov-03

    Si6459BDQ

    Abstract: Si6459BDQ-T1 32220
    Text: Si6459BDQ Vishay Siliconix New Product P-Channel 60-V D-S MOSFET PRODUCT SUMMARY VDS (V) −60 60 FEATURES rDS(on) (W) ID (A) 0.115 @ VGS = −10 V −2.7 0.150 @ VGS = −4.5 V −2.4 D TrenchFETr Power MOSFET S* TSSOP-8 D 1 S 2 S 3 G 4 G 8 D 7 S D * Source Pins 2, 3, 6 and 7


    Original     		PDF Si6459BDQ Si6459BDQ-T1 08-Apr-05 32220

    Single P-Channel, Logic Level, PowerTrench MOSFET

    Abstract: P-Channel Logic Level PowerTrenchTM MOSFET F63TNR F852 FDR8308P SOIC-16
    Text: November 1998 FDR8308P Dual P-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features The SuperSOT-8 family of P-Channel Logic Level MOSFETs have been designed to provide a low profile, small footprint alternative to industry standard SO-8 little foot type product.


    Original     		PDF FDR8308P Single P-Channel, Logic Level, PowerTrench MOSFET P-Channel Logic Level PowerTrenchTM MOSFET F63TNR F852 FDR8308P SOIC-16

    FDR8308P

    Abstract: SOIC-16
    Text: November 1998 FDR8308P Dual P-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features The SuperSOT-8 family of P-Channel Logic Level MOSFETs have been designed to provide a low profile, small footprint alternative to industry standard SO-8 little foot type product.


    Original     		PDF FDR8308P FDR8308P SOIC-16

    F63TNR

    Abstract: F852 FDR8308P SOIC-16 SSOT-8
    Text: November 1998 FDR8308P Dual P-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features The SuperSOT-8 family of P-Channel Logic Level MOSFETs have been designed to provide a low profile, small footprint alternative to industry standard SO-8 little foot type product.


    Original     		PDF FDR8308P F63TNR F852 FDR8308P SOIC-16 SSOT-8

    Untitled

    Abstract: No abstract text available
    Text: Si3417DV Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () Max. ID (A)d,e 0.0252 at VGS = - 10 V -8 0.0360 at VGS = - 4.5 V -8 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Material categorization:


    Original     		PDF Si3417DV Si3417DV-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Schottky Diode 40V 6A

    Abstract: CBVK741B019 F011 F63TNR F852 FDFS2P102 FDS9953A L86Z
    Text: FDFS2P102 Integrated P-Channel MOSFET and Schottky Diode General Description Features The FDFS2P102 combines the exceptional performance of Fairchild's high cell density MOSFET with a very low forward voltage drop Schottky barrier rectifier in an SO-8 package.


    Original     		PDF FDFS2P102 FDFS2P102 Schottky Diode 40V 6A CBVK741B019 F011 F63TNR F852 FDS9953A L86Z

    FDFS2P102

    Abstract: No abstract text available
    Text: FDFS2P102 Integrated P-Channel MOSFET and Schottky Diode General Description Features The FDFS2P102 combines the exceptional performance of Fairchild's high cell density MOSFET with a very low forward voltage drop Schottky barrier rectifier in an SO-8 package.


    Original     		PDF FDFS2P102 FDFS2P102

    2U 73 diode

    Abstract: siliconix
    Text: SÌ6415DQ Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SU M M AR v V d s CV) RDS(OM) (ß ) Id là) 0,019 @ VGS = - 1 0 V ±6.5 0.030 @ V gs = -4 .5 V ±5.2 -3 0 S* P TSSOP-8 * Source Pins 2, 3, 6 and 7 must be tied common. Top View ò D P-Channel MOSFET


    OCR Scan     		PDF 6415DQ S-49519-- 18-Dec-96 2U 73 diode siliconix

    Untitled

    Abstract: No abstract text available
    Text: SÌ6463DQ Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY V o s <VJ Rd S<ON| (3 ) >d (A) 0.020 @ VGS = -4 .5 V ±6.5 0.030 @ VGS = -2.5 V ±5.2 e 't'V ' A -20 s* Q TSSOP-8 O il Source Pins 2, 3 ,6 and 7 must be tied common. It Top View Ô D P-Channel MOSFET


    OCR Scan     		PDF 6463DQ S-51477-- 17-Feb-97 S86463DQ_ 17-Fet